BSD816SN
OptiMOS™2 Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Ultra Logic level (1.8V rated)
• Avalanche rated
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
• Halogen-free according to IEC61249-2-21
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current IDTA=25 °C 1.4 A
TA=70 °C 1.1
Pulsed drain current ID,pulse TA=25 °C 5.6
Avalanche energy, single pulse EAS ID=1.4 A, RGS=25 Ω3.7 mJ
Reverse diode dv/dtdv/dtID=1.4 A, VDS=16 V,
di/dt=200 A/µs,
Tj,max=150 °C
6 kV/µs
Gate source voltage VGS ±8 V
Power dissipation1) Ptot TA=25 °C W
Operating and storage temperature Tj, Tstg -55 ... 150 °C
ESD Class JESD22-A114 -HBM 0 (<250V)
Soldering Temperature 260 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Value
0.5
PG-SOT363
3
2
1
654
Type Package Tape and Reel Information Marking Lead Free Packing
BSD816SN PG-SOT363 L6327: 3000 pcs/ reel XAs Yes Non dry
VDS 20 V
RDS(on),max VGS=2.5 V 160 mΩ
VGS=1.8 V 240
ID1.4 A
Product Summary
Rev 2.3 page 1 2011-07-14
BSD816SN
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - ambient RthJA minimal footprint 1) - - 250 K/W
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS= 0 V, ID= 250 µA 20 - - V
Gate threshold voltage VGS(th) VDS=VGS, ID=3.7 µA 0.3 0.55 0.95
Drain-source leakage current IDSS VDS=20 V, VGS=0 V,
Tj=25 °C --1
μA
VDS=20 V, VGS=0 V,
Tj=150 °C - - 100
Gate-source leakage current IGSS VGS=8 V, VDS=0 V - - 100 nA
Drain-source on-state resistance RDS(on) VGS=1.8 V,
ID=0.44 A - 158 240 mΩ
VGS=2.5 V, ID=1.4 A - 112 160
Transconductance gfs
|VDS|>2|ID|RDS(on)max,
ID=1.1 A 4.8 - S
Values
1) Performed on 40mm2 FR4 PCB. The traces are 1mm wide 70μm thick and 20mm long; they are present on both sides
of the PCB.
Rev 2.3 page 2 2011-07-14
BSD816SN
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance Ciss - 126 180 pF
Output capacitance Coss -4767
Reverse transfer capacitance Crss -710
Turn-on delay time td(on) - 5.3 - ns
Rise time tr- 9.0 -
Turn-off delay time td(off) -11-
Fall time tf- 2.2 -
Gate Charge Characteristics
Gate to source charge Qgs - 0.2 - nC
Gate to drain charge Qgd - 0.2 -
Gate charge total Qg- 0.6 -
Gate plateau voltage Vplateau - 1.6 - V
Reverse Diode
Diode continous forward current IS- - 0.5 A
Diode pulse current IS,pulse --6
Diode forward voltage VSD VGS=0 V, IF=1.4 A,
Tj=25 °C - 0.87 1.1 V
Reverse recovery time trr - 8.1 - ns
Reverse recovery charge Qrr - 1.4 - nC
VR=10 V, IF=1.4 A,
diF/dt=100 A/µs
TA=25 °C
Values
VGS=0 V, VDS=10 V,
f=1 MHz
VDD=10 V, VGS=2.5 V,
ID=1.4 A, RG=6 Ω
VDD=10 V, ID=1.4 A,
VGS=0 to 2.5 V
Rev 2.3 page 3 2011-07-14
BSD816SN
1 Power dissipation 2 Drain current
Ptot=f(TA)ID=f(TA); VGS2.5 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TA=25 °C; D=0 ZthJA=f(tp)
parameter: tpparameter: D=tp/T
1 µs
10 µs
100 µs
1 ms
10 ms
DC
10-2 10-1 100101102
10-3
10-2
10-1
100
101
VDS [V]
ID [A]
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
101
100
10-1
10-2
10-3
10-4
10-5
102
101
100
10-1
tp [s]
ZthJA [K/W]
0
0.125
0.25
0.375
0.5
0 40 80 120 160
TA [°C]
Ptot [W]
0
0.25
0.5
0.75
1
1.25
1.5
0 40 80 120 160
TA [°C]
ID [A]
Rev 2.3 page 4 2011-07-14
BSD816SN
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
0
2
4
6
8
10
01234
ID [A]
gfs [S]
25 °C
150 °C
0
0.5
1
1.5
01122
VGS [V]
ID [A]
1.2 V
1.3 V
1.4 V
1.5 V
1.6 V
1.8 V
2 V
2.5 V
0
0.5
1
1.5
2
2.5
3
0.0 0.2 0.4 0.6 0.8 1.0
VDS [V]
ID [A]
1.3 V
1.4 V
1.5 V
1.6 V
1.8 V
2 V
2.5 V
0
50
100
150
200
250
300
350
400
0 0.5 1 1.5 2 2.5 3
ID [A]
RDS(on) [mΩ]
Rev 2.3 page 5 2011-07-14
BSD816SN
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=1.4 A; VGS=2.5 V VGS(th)=f(Tj); VDS=VGS; ID=3.7 µA
parameter: ID
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz; Tj=25°C IF=f(VSD)
parameter: Tj
typ
98%
0
40
80
120
160
200
240
280
-60 -20 20 60 100 140 180
Tj [°C]
RDS(on) [mΩ]
typ
98%
2%
-0.4
0
0.4
0.8
1.2
-60 -20 20 60 100 140 180
Tj [°C]
VGS(th) [V]
Ciss
Coss
Crss
100
101
102
103
0 5 10 15 20
VDS [V]
C [pF]
25 °C
150 °C
150°C, 98%
25°C, 98%
10-3
10-2
10-1
100
101
0 0.2 0.4 0.6 0.8 1 1.2
VSD [V]
IF [A]
Rev 2.3 page 6 2011-07-14
BSD816SN
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 ΩVGS=f(Qgate); ID=1.4 A pulsed
parameter: Tj(start) parameter: VDD
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=250 µA
16
17
18
19
20
21
22
23
24
25
-60 -20 20 60 100 140
Tj [°C]
VBR(DSS) [V]
4 V
10 V
16 V
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0 0.25 0.5 0.75 1 1.25
Qgate [nC]
VGS [V]
25 °C
100 °C
125 °C
103
102
101
100
101
100
10-1
tAV [µs]
IAV [A]
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
Rev 2.3 page 7 2011-07-14
BSD816SN
SOT363
Package Outline:
Footprint: Packing:
Reflow soldering:
Dimensions in mm
Rev 2.3 page 8 2011-07-14
BSD816SN
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
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contact the nearest Infineon Technologies Office (www.infineon.com).
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Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
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Rev 2.3 page 9 2011-07-14