FOR USE BY ELECTRICIANS OVERSEAS : Bakes uiA5tGeR (New Transistor Manual) lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English translation key given below. RK BM (Tae 05'C) z OR Te) oe RS ph Bl A eee a Te (mA) Pee (nW ) JG () Tew SAH (aA y | Ve) WRK Ae ATOR ire | tues hea | hoe | fan i t # | Beet lho tf Val elma] Vent] ima] tow | toy |Gcio} Gr) | Ge) | o Meteo ely wry Pte = o ee TYPE NUMBER USES MAXIMUM RATINGS BOBS & ORIGINAL MANUFACTURER MATERIAL AND STRUCTURE Icoo MAXIMUM VALUE AND Ves VALUE (CRITERIA FOR MEASURING I czo ) S STANDARD VALUE OF DC/PULSE hee AND Vee I. ( CRITERIA FOR MEASURING DC/PULSE Are ) fl STANDARD VALUE OF kh PARAME- TERS AND BIAS Vee , Ie (CRITERIA FOR MEASURING A PARAMETERS) = oo iy [oo I | _g INDICATES VALUE IN GROUNDED- BASE OPERATION, OTHERWISE VALUE IN EMITTER-GROUNDED OPERATION. fas OF RF CHARACTERISTIC, EXCEPT IN CASE OF * WHICH INDICATES VALUE OF f-. Cos AND roy OF RF CHARACTERIS- TICS EXCEPT IN CASE OF * IN 1r,, COLUMN WHICH INDICATES VALUE OF hie (real) OUTLINE REMARKS :ta>7): COMPLEMENTARY TO -::-- _ a + + oe OF te KR RH We (Ta = 25C) & RH cp] 9% 4 (Ta = 25C) a m 8) ee | i@| HGS | Veso | Veso | fe | Pc T; | Icuo Re AMG [it Riko Ahpel os 4 FOR | hye ht, furl ey fat Cob hanes i * cv) | OV) | Gna) | (mw) ] C) | (HA) ]Vea(V) Vee(V)iic(mA)|Vex(V))/Ie(mA)} Ags* | (Q) [(x10+)| (we) | (Me) | (@F) | (a) | % 2SA683)48 | PA Si.EP| ~30| ~5 | -1A| 750 | 135 | -0.1} -20 | 160 | 10 | 500] 10} 50 207) 20 | 3.5 *| 165 6840 | 9 | -60/ 5 | -1a | 750 | 135 | -o.4| -20 | 160 | -10 | soa] 10 | 50 200*| 20 | 3.5 *| 165 685| * | AF Si. TP] -150} 5 | 50 | 300 | 125 | 1 | -100] 150 | 3 | -15 | -10|] 3 67 | 540 | 0.4 | 77 | 100%} 5 35 | 138 ose 2 687 688 : * 689 : * 690 * 691 692 * 693 694 " 6955 Si.EP| ~25 | 4 |700| 500 | 125 | 1 | -25 | 100 | ~1 | -500} 6 | 10 150*) 20 | $532 [gep| 355124, " 696 " " | ~45 | ~4 |-300] 500 | 125 | 1 | 25 | 100 | 2 |-150] -6 | 10 150*| 10 | [6a 13eB/2SS12,, 697; 9 Ton | ~68 | ~4 |-300| 500 | 125 | -1 | 25] 100 | 2 | -150] 6 | 10 150*) 10 | [goe% |isaBl28SH24 , 698} . |PASW }130' 5 |-800],,7.) 180 | -10 | 25 | 100 | 4 | 300 fons 20a: tof < BOOS 132 609 |#e oF | PA | 40 | 5 ~1 | -20 | 120 | ~5 | -14] 5 | 500 150") 50 | 3.3 *) 161 [2852226 molH af # Si.E | 35 ~10 | 35 | 100 | 2 | -200] 4 | 500 11 *} 200 | 6 * | 268 "701, < i:| RF.LN Si.EP}| -30 | 5 1 | -25 | 200 | -6 | -1 | -6 1 2200 | 0.5 7 80 | 12 | 93g | a7 702). " Jo | 30 f 5 1 | -45 | 20 | -6 | -1]-6)] 1 2200 | 0.5 | 7 go | 12 | Sots | 27 * 703: . | SW.PA | =25 | -5 1 | -16 | 100 | ~4 | 500 5g his TSO BUS 132 [281243 | 704 | 25 | 5 ~0.5| 25 | 20) -3 | -1[-6 | 1 6600 | 0.76 | 16.2 [MooatP, 6 | goth | 38 |SSeIA, 50 | 5 0.5| 2 | 90 | -3 |-1|-6] 1 coe.) 140") 6 | Seg ts | 38 |2858328,, " 60 | -6 -1 | ~50 } 150 | ~2 | -100] -10 7 10 120") 10 | Sege% | 174 * 707; H i] RF. PA Sii.E | 40 | 5 0.2] 25 | 120 | 1 | -100} 3 | 50 180 | 24 10 | 45 [782336 708; |RF.AF.SW| * | ~80 | 8 |700/ 800 , 150 |0.1| 60 | 150 | ~2 | ~50 | ~10 | 50 100 *} 25 25* |84B " 79)" |i 60 | 8 |200| 300 | 150 |-0.1; ~40} 160 | -1 | -10} ~10 | 10 2g0*| 7.5 | 70* | 304 710: 9 | RF.SW | -50] -s |~100/ 300 | 150 |-0.1! 30 | a20 | 1 | -10 | -10 | 10 | ten<80nS. tex <180n5 600") 2.5 | 34 lage ML: 9 " | * | ~80 | 5 |-100| 300 | 150 | -0.1' 30 T20 | 1 10| -10| 10 pon gos 7 < 17 ORS 1000"| 2.5 | 34* jasc em) * | v [=180] 5 | s00| 750 | 175 | --0.1 | -100] 110 | 10 | -s0 | 10 | 50 | | | 350*| 5.5 | 11* [s4p[@sci2i7