BC846...-BC850... NPN Silicon AF Transistors * For AF input stages and driver applications * High current gain * Low collector-emitter saturation voltage * Low noise between 30 Hz and 15 kHz * Complementary types: BC856...-BC860...(PNP) * Pb-free (RoHS compliant) package 1) * Qualified according AEC Q101 1Pb-containing package may be available upon special request 1 2010-06-28 BC846...-BC850... Type Marking Pin Configuration Package BC846A 1As 1=B 2=E 3=C - - - SOT23 BC846B 1Bs 1=B 2=E 3=C - - - SOT23 BC846BW 1Bs 1=B 2=E 3=C - - - SOT323 BC847A 1Es 1=B 2=E 3=C - - - SOT23 BC847B 1Fs 1=B 2=E 3=C - - - SOT23 BC847BF* 1Fs 1=B 2=E 3=C - - - TSFP-3 BC847BL3 1F 1=B 2=E 3=C - - - TSLP-3-1 BC847BW 1Fs 1=B 2=E 3=C - - - SOT323 BC847C 1Gs 1=B 2=E 3=C - - - SOT23 BC847CW 1Gs 1=B 2=E 3=C - - - SOT323 BC848A 1Js 1=B 2=E 3=C - - - SOT23 BC848B 1Ks 1=B 2=E 3=C - - - SOT23 BC848BL3 1K 1=B 2=E 3=C - - - TSLP-3-1 BC848BW 1Ks 1=B 2=E 3=C - - - SOT323 BC848C 1Ls 1=B 2=E 3=C - - - SOT23 BC848CW 1Ls 1=B 2=E 3=C - - - SOT323 BC849B 2Bs 1=B 2=E 3=C - - - SOT23 BC849C 2Cs 1=B 2=E 3=C - - - SOT23 BC849CW 2Cs 1=B 2=E 3=C - - - SOT323 BC850B 2Fs 1=B 2=E 3=C - - - SOT23 BC850BW 2Fs 1=B 2=E 3=C - - - SOT323 BC850C 2Gs 1=B 2=E 3=C - - - SOT23 BC850CW 2Gs 1=B 2=E 3=C - - - SOT323 * Not for new design 2 2010-06-28 BC846...-BC850... Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BC846... 65 BC847..., BC850... 45 BC848..., BC849... 30 Collector-emitter voltage VCES BC846... 80 BC847..., BC850... 50 BC848..., BC849... 30 Collector-base voltage VCBO BC846... 80 BC847..., BC850... 50 BC848..., BC849... 30 Emitter-base voltage VEBO BC846... 6 BC847..., BC850... 6 BC848..., BC849... 6 Collector current IC 100 Peak collector current, tp 10 ms ICM 200 Total power dissipation- Ptot 330 TS 128 C, BC847F 250 TS 135 C, BC847L3-BC848L3 250 TS 124 C, BC846W-BC850W 250 Junction temperature Tj Storage temperature Tstg Thermal Resistance Parameter Junction - soldering point 1) Symbol RthJS mA mW TS 71 C, BC846-BC850 150 C -65 ... 150 Value BC846-BC850 240 BC847F 90 BC847L3-BC848L3 60 BC846W-BC850W 105 1For Unit Unit K/W calculation of RthJA please refer to Application Note Thermal Resistance 3 2010-06-28 BC846...-BC850... Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO V IC = 10 mA, IB = 0 , BC846... 65 - - IC = 10 mA, IB = 0 , BC847..., BC850... 45 - - IC = 10 mA, IB = 0 , BC848..., BC849... 30 - - IC = 10 A, IE = 0 , BC846... 80 - - IC = 10 A, IE = 0 , BC847..., BC850... 50 - - IC = 10 A, IE = 0 , BC848..., BC849... 30 - - - 6 - Collector-base breakdown voltage V(BR)CBO Emitter-base breakdown voltage V(BR)EBO IE = 0 , IC = 10 A Collector-base cutoff current A I CBO VCB = 45 V, IE = 0 - 0.015 - VCB = 30 V, IE = 0 , TA = 150 C - 5 - DC current gain1) - h FE IC = 10 A, VCE = 5 V, hFE-grp.A - 140 - IC = 10 A, VCE = 5 V, hFE-grp.B - 250 - IC = 10 A, VCE = 5 V, hFE-grp.C - 480 - IC = 2 mA, VCE = 5 V, hFE-grp.A 110 180 220 IC = 2 mA, VCE = 5 V, hFE-grp.B 200 290 450 IC = 2 mA, VCE = 5 V, hFE-grp.C 420 520 800 Collector-emitter saturation voltage1) mV VCEsat IC = 10 mA, IB = 0.5 mA - 90 250 IC = 100 mA, IB = 5 mA - 200 600 IC = 10 mA, IB = 0.5 mA - 700 - IC = 100 mA, IB = 5 mA - 900 - IC = 2 mA, VCE = 5 V 580 660 700 IC = 10 mA, VCE = 5 V - - 770 Base emitter saturation voltage 1) VBEsat Base-emitter voltage1) VBE(ON) 1Pulse test: t < 300s; D < 2% 4 2010-06-28 BC846...-BC850... Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency fT - 250 - MHz IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance Ccb - 0.95 - pF Ceb - 9 - VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance h11e k IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.A - 2.7 - IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.B - 4.5 - IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.C - 8.7 - Open-circuit reverse voltage transf. ratio 10-4 h12e IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.A - 1.5 - IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.B - 2 - IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.C - 3 - IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.A - 200 - IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.B - 330 - IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.C - 600 - Short-circuit forward current transf. ratio h21e Open-circuit output admittance S h22e IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.A - 18 - IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.B - 30 - IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.C - 60 - F - 1.2 4 Vn - - Noise figure dB IC = 200 A, VCE = 5 V, f = 1 kHz, f = 200 Hz, RS = 2 k, BC849..., BC850... Equivalent noise voltage 0.135 V IC = 200 A, VCE = 5 V, RS = 2 k, f = 10 ... 50 Hz , BC850... 5 2010-06-28 BC846...-BC850... DC current gain hFE = (IC) Collector-emitter saturation voltage VCE = 5 V IC = (VCEsat), hFE = 20 EHP00365 10 3 h FE 5 100 C EHP00367 10 2 C mA 100 C 25 C -50 C 25 C -50 C 10 2 10 1 5 5 10 1 10 5 5 10 0 10 -2 5 10 -1 5 10 0 5 10 1 0 10 -1 mA 10 2 0 0.1 0.2 0.4 0.3 C V 0.5 VCEsat Base-emitter saturation voltage Collector cutoff current ICBO = (TA) IC = (V BEsat), hFE = 20 VCB = 30 V EHP00364 10 2 CB0 C mA 100 C 25 C -50 C 10 1 EHP00415 10 4 nA max 10 3 5 5 typ 10 2 5 10 0 10 5 1 5 10 -1 10 0 0 0.2 0.4 0.6 0.8 V 1.2 0 50 100 C 150 TA V BEsat 6 2010-06-28 BC846...-BC850... Transition frequency fT = (IC) VCE = 5 V Collector-base capacitance Ccb = (V CB) Emitter-base capacitance Ceb = (VEB) EHP00363 10 3 13 pF MHz 11 5 CCB/C EB fT 10 9 8 7 10 2 6 CEB 5 5 4 3 2 1 10 1 10 -1 5 10 0 5 10 1 mA CCB 0 0 10 2 4 8 12 360 300 mW 300 250 270 225 240 200 Ptot Ptot 22 Total power dissipation Ptot = (TS) BC847BF mW 210 175 180 150 150 125 120 100 90 75 60 50 30 25 0 0 V VCB/VEB C Total power dissipation Ptot = (TS) BC846-BC850 16 15 30 45 60 75 90 105 120 0 0 C 150 TS 15 30 45 60 75 90 105 120 C 150 TS 7 2010-06-28 BC846...-BC850... Total power dissipation Ptot = (TS) BC847BL3/BC848BL3 Total power dissipation Ptot = (TS) BC846W-BC850W 300 300 mW 250 250 225 225 200 200 P tot P tot mW 175 175 150 150 125 125 100 100 75 75 50 50 25 25 0 0 15 30 45 60 90 105 120 C 75 0 0 150 15 30 45 60 90 105 120 C 75 TS 150 TS Permissible Puls Load R thJS = (tp) BC847BF Permissible Pulse Load Ptotmax/P totDC = (tp) BC846/W-BC850/W 10 2 EHP00362 10 3 Ptot max Ptot DC tp tp D= T K/W 10 2 RthJS T D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 10 0 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 -1 -6 10 0 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 8 2010-06-28 BC846...-BC850... Permissible Puls Load R thJS = (tp) BC847BL3, BC848BL3 Permissible Pulse Load Ptotmax/P totDC = (tp) BC847BF 10 2 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 -6 10 RthJS P totmax/P totDC 10 3 10 -5 10 -4 10 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 -3 10 -2 s 10 10 -1 -7 10 0 10 -6 10 -5 10 -4 10 -3 10 tp -2 s 10 0 tp Permissible Pulse Load Noise figure F = (VCE) Ptotmax/P totDC = (tp) IC = 0.2mA, R S = 2k , f = 1kHz BC847BL3, BC848BL3 Ptotmax/ PtotDC 10 3 20 F 10 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 2 BC 846...850 EHP00370 dB 15 10 10 1 5 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 -1 0 tp 5 10 0 10 1 V 10 2 VCE 9 2010-06-28 BC846...-BC850... Noise figure F = (f) Noise figure F = (I C) VCE = 5V, f = 120Hz IC = 0.2 mA, VCE = 5V, RS = 2 k 20 BC 846...850 EHP00371 20 BC 846...850 EHP00372 dB dB F F 15 15 RS = 1 M 100 k 10 k 10 10 500 5 5 1 k 0 10 -2 10 -1 10 0 10 1 0 10 -3 kHz 10 2 10 -2 10 -1 10 0 C f Noise figure F = (IC ) Noise figure F = (I C) VCE = 5V, f = 10kHz VCE = 5V, f = 1kHz 20 mA 10 1 BC 846...850 EHP00373 20 BC 846...850 EHP00374 dB dB F F 15 15 RS = 1 M R S = 1 M 100 k 10 k 100 k 10 10 10 k 500 1 k 5 5 500 0 10 -3 10 -2 10 -1 10 0 1 k 0 10 -3 mA 10 1 C 10 -2 10 -1 10 0 mA 10 1 C 10 2010-06-28 Package SOT23 BC846...-BC850... 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 0.1 1 2.4 0.15 3 0.1 MAX. 10 MAX. B 1 0.1 10 MAX. 2.9 0.1 0.15 MIN. Package Outline A 5 0...8 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.9 Pin 1 1.15 3.15 11 2010-06-28 Package SOT323 BC846...-BC850... Package Outline 0.9 0.1 2 0.2 0.3 +0.1 -0.05 0.1 MAX. 3x 0.1 M 0.1 A 1 2 1.25 0.1 0.1 MIN. 2.1 0.1 3 0.15 +0.1 -0.05 0.65 0.65 0.2 M A Foot Print 0.8 1.6 0.6 0.65 0.65 Marking Layout (Example) Manufacturer 2005, June Date code (YM) BCR108W Type code Pin 1 Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel 0.2 2.3 8 4 Pin 1 2.15 1.1 12 2010-06-28 Package TSFP-3 BC846...-BC850... Package Outline 0.2 0.05 0.55 0.04 1 1.2 0.05 0.2 0.05 3 2 0.2 0.05 10 MAX. 0.8 0.05 1.2 0.05 0.15 0.05 0.4 0.05 0.4 0.05 Foot Print 1.05 0.45 0.4 0.4 0.4 Marking Layout (Example) Manufacturer BCR847BF Type code Pin 1 Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel 4 0.2 1.2 1.5 8 0.3 Pin 1 0.7 1.35 13 2010-06-28 Package TSLP-3-1 BC846...-BC850... Package Outline Bottom view 0.4 +0.1 0.6 0.05 0.5 0.035 2 1 0.05 3 0.65 0.05 3 1) 2 1 1) 0.05 MAX. 0.35 0.05 Pin 1 marking 2 x 0.15 0.035 2 x 0.25 0.035 1 0.25 0.035 1) Top view 1) 1) Dimension applies to plated terminal Foot Print R0.1 0.2 0.225 0.2 0.225 0.315 0.35 1 0.3 0.945 0.35 0.45 0.275 0.6 0.355 For board assembly information please refer to Infineon website "Packages" 0.17 0.15 Copper Solder mask Stencil apertures Marking Layout (Example) BFR193L3 Type code Pin 1 marking Laser marking Standard Packing Reel o180 mm = 15.000 Pieces/Reel 0.5 1.16 Pin 1 marking 8 4 0.76 14 2010-06-28 BC846...-BC850... Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( <www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 15 2010-06-28