Si SGS-THOMSON FEATURES a HIGH SURGE CAPABILITY a HIGH ON-STATE CURRENT w HIGH STABILITY AND RELIABILITY DESCRIPTION The BTW 50 Family of Silicon Controlled Rectifiers uses a high performance glass passivated tech- nology. This general purpose Family of Silicon Controlled Rectifiers is designed for power supplies up to TO 65 400Hz on resistive or inductive load. (Metal) ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit IT(RMS) RMS on-state current Te = 100 C 63 A (180 conduction angle) IT(AV) Average on-state current Te = 100C 40 A (180 conduction angle, single phase circuit) ITSM Non repetitive surge peak on-state current ip = 8.3 ms 950 A ( Tj initial = 25C ) tp = 10 ms 910 12 12t value tp = 10 ms 4150 Aes di/dt Critical rate of rise of on-state current 100 Alus Gate supply :IG=1A diG/dt = 1 A/us Tstg Storage and operating junction temperature range - 40 to + 150 C Tj - 40 to + 125 C Ti Maximum lead temperature for soldering during 10 s at 4.5 mm 230 C from case Symbol Parameter BTW 50- Unit 200 400 600 800 | 1000 | 1200 VDRM Repetitive peak off-state voltage 200 400 600 soo | 1000 | 1200 v VRRM Tj= 125C July 1991 1/4 Me 7929237 0059512 SOT om 187 BTW 50 THERMAL RESISTANCES Symbol Parameter Value Unit Rth (ch) Contact (case to heatsink) 0.3 CIW Rth (-c) DC | Junction to case for DC 04 C/W GATE CHARACTERISTICS (maximum values) PG (AV) = 2W PG = 80W (tp = 20s) IFGm = 10A (p= 20s) VEGM = 16V (tp= 20s) VAGM= 5V. ELECTRICAL CHARACTERISTICS Symbol Test Conditions Value Unit IeT Vp=12V (DC) RL=33Q Tj=25C MAX 150 mA Vet | Vp=12V (DC) RL=330 Tj=25C | MAX 15 Vap | Vp=VDRM RL=3.3ka2 Tj= 125C | MIN 0.2 v tgt Vp=VDRM_ Iq = 500mA Tj=25C TYP 2 ps dig/dt = 3A/us i ig= 1.2 let Tj-25C | TYP 100 mA lH It=500mA gate open Tj=25C TYP 50 mA VIM ITM= 500A tp= 380us Tix25C | MAX 3 v IDRM VDRM_ Rated Tj=25C MAX 0.02 mA IRRM | VRRM Rated Tj= 125C 12 dV/dt Linear slope up to Vp=67%VDRM Tj= 125C | MIN 200 Vius gate open Tq Vp=67%VpRM lTM=500A VR=50V | Tj= 125C | TYP 100 ys ditwdt=30 Ajis dVp/dt= 20V/us 2/4 188 Me 7929237 0059513 44h BTW 50 Fig.1 : Maximum average power dissipation versus average on-state current. P (Ww) 70 Y : 360 60} {vW A 50 Ha pe 40 Z KA QO: 180 | 30 4 SS Q- 120 OQ: 90 | 20 } Ql 60 | i . ol so Ireav) (A) | 0 10 20 30 40 50 60 70 Fig.3 : Average on-state current versus case temperature. cay (A) Toase("C) 0 25 50 75 100 125 Fig.5 : Relative variation of gate trigger current versus junction temperature. WAIT). In[Tj=25 C IgtiTil Toth TOE CT 2.5 ~ hy 1 Ih qt I J r rr 0.5 t Tj (C) Oo 1 1 1 1 -40-30-20-10 0 10 20 30 40 50 60 70 80 80 100110120130 Me 7925237? 0059514 382 me Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and Tease) for different thermal resistances heatsink + contact. P (Ww) Tease (C) 70 95 C 60r QQ 180 S 50 105 40 30 20 415 10/ tamb (C) 0 125 oO 20 40 60 80 100 120 140 Fig.4 : Thermal transient impedance junction to ambient versus pulse duration. Zth j-c (C/W) 1.0E+00 t (s) 10E*01 1.0E-02 10E-04 10E-03 10E-02 10E-01 10E+00 Fig.6 : Non repetitive surge peak on-state current versus number of cycles. tom (A) 1000 Toot |__| T) initial = 25C 800 CS 600 HAH 400 NY rh P| 200 ao Number of cycles 0 Ladi it 1 10 100 1000 3/4 189 BTW 50 Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t < 10 ms, and corresponding value of I2t. Ise (A). It (A 8) Tj initial = 25C 5000 600 PACKAGE MECHANICAL DATA (in millimeters) TO 65 Metal Fig.8 : On-state characteristics (maximum values). 1000 Tj initial 25C 100 Timax 1) max Vto = 1.05V Rt =0.00420 Vtm(v) 1 2 3 4 16,5 mox 11/16 over 31,5 max Cooling method : C Marking : type number Weight : 19 g Polarity : Anade (or A?) to case Stud torque : 3.5 mAN min / 3.8 mAN max 2929997 9059515 219 190