NTE196 (NPN) & NTE197 (PNP)
Silicon Complementary Transistors
Audio Power Output and Medium Power Switching
Description:
The NTE196 (NPN) and NTE197 (PNP) are silicon complementary transistors in a TO220 type pack-
age designed for use in general purpose amplifier and switching applications.
Features:
DDC Current Gain Specified to 7 Amps: hFE = 2.3 Min @ IC = 7A
DCollector–Emitter Sustaining Voltage: VCEO(sus) = 70V Min
DHigh Current–Gain Bandwidth Product:
fT= 4MHz Min @ IC = 500mA (NTE196)
= 10MHz Min @ IC = 500mA (NTE197)
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO 70V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Voltage, VCB 80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEB 5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
Continuous 7A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, IB3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (TC = +25°C), PD40W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25°C 0.32W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, TJ–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, RthJC 3.125°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0, Note 1 70 – – V
Collector Cutoff Current ICEO VCE = 60V, IB = 0 – – 1.0 mA
ICEX VCE = 80V, VEB(off) = 1.5V – – 100 µA
VCE = 80V, VEB(off) = 1.5V, TC = +150°C – – 2.0 mA
Emitter Cutoff Current IEBO VBE = 5V, IC = 0 – – 1.0 mA
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain hFE IC = 2A, VCE = 4V 30 –150
IC = 7A, VCE = 4V 2.3 – –
Collector–Emitter Saturation Voltage VCE(sat) IC = 7A, IB = 3A – – 3.5 V
Base–Emitter ON Voltage VBE(on) IC = 7A, VCE = 4V – – 3.0 V
Dynamic Characteristics
Current–Gain Bandwidth Product
NTE196 fTIC = 500mA, VCE = 4V, ftest = 1MHz, 4– – MHz
NTE197 Note 2 10 – – MHz
Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz – – 250 pF
Small–Signal Current Gain hfe IC = 500mA, VCE = 4V, f = 50kHz 20 – –
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Note 2. fT = |hfe| ftest
.420 (10.67)
Max
.500
(12.7)
Max
.500
(12.7)
Min
.250 (6.35)
Max
.147 (3.75)
Dia Max
.070 (1.78) Max
.100 (2.54)
Base
Collector/Tab
Emitter
.110 (2.79)
