BYV32E-200
Dual rugged ultrafast rectifier diode, 20 A, 200 V
Rev. 04 — 27 February 2009 Product data sheet
1. Product profile
1.1 General description
Ultrafast dual epitaxial rectifier diode in a SOT78 (TO-220AB) plastic package.
1.2 Features and benefits
High reverse voltage surge capability
High thermal cyclin g performance
Low thermal resi stance
Soft recovery characteri stic minimizes
power consuming oscillations
Very low on-state loss
1.3 Applications
Output rectifiers in high-frequency
switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter Conditions Min Typ Max Unit
VRRM repetitive peak
reverse voltage - - 200 V
IO(AV) average output
current square-wave pulse; δ= 0.5;
Tmb ≤115 °C; both diodes
conducting; see Figure 1;
see Figure 2
--20A
IRRM repetitive peak
reverse current tp=2µs; δ=0.001 --0.2A
VESD electrostatic
discharge voltage HBM; C = 250 pF; R = 1.5
kΩ; all pins --8kV
Dynamic characteristics
trr reverse recovery
time IF=1A; V
R=30V;
dIF/dt = 100 A/µs;
Tj= 25 °C; ramp recovery;
see Figure 5
- 2025ns
IR=1A; I
F=0.5A;
Tj= 25 °C; step recovery;
measured at reverse current
= 0.25 A; see Figure 6
- 1020ns
Static characteristics
VFforward voltage IF=8A; T
j=150°C; see
Figure 4 - 0.72 0.85 V
BYV32E-200_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 27 February 2009 2 of 9
NXP Semiconductors BYV32E-200
Dual rugged ultrafast rect ifier diode, 20 A, 200 V
2. Pinning information
3. Ordering information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 A1 anode 1
SOT78
(TO-220AB; S C - 4 6 )
2 K cathode
3 A2 anode 2
mb K mounting base; cathode
12
mb
3
sym125
A2A1
K
Table 3. Ordering information
Type number Package
Name Description Version
BYV32E-200 TO-220AB;
SC-46 plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB SOT78
BYV32E-200_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 27 February 2009 3 of 9
NXP Semiconductors BYV32E-200
Dual rugged ultrafast rect ifier diode, 20 A, 200 V
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maxi mum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VRRM repetitive peak reverse
voltage -200V
VRWM crest working reverse
voltage -200V
VRreverse voltage DC - 200 V
IO(AV) average output current square-wave pulse; δ= 0.5; Tmb ≤115 °C; both
diodes conducting; see Figure 1; see Figure 2 -20A
IFRM repetitive peak forward
current δ= 0.5; tp= 25 µs; Tmb ≤115 °C; per diode - 20 A
IFSM non-repetitive peak
forward current tp= 8.3 ms; sine-wave pulse; Tj(init) = 25 °C; per
diode -137A
tp= 10 ms; sine-wave pulse; Tj(init) =25°C; per
diode -125A
IRRM repetitive peak reverse
current δ= 0.001; tp=2µs - 0.2 A
IRSM non-repetitive peak
reverse current tp= 100 µs - 0.2 A
Tstg storage temperature -40 150 °C
Tjjunction temperature - 150 °C
VESD electrostatic discharge
voltage HBM; C = 250 pF; R = 1.5 kΩ; all pins - 8 kV
Fig 1. Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
Fig 2. Forward power dissipation as a function of
average forward current; square waveform;
maximum values
01284
003aac978
4
8
12
0
1.9
a = 1.57
2.2
2.8
4.0
IF(AV) (A)
Ptot
(W)
015105
003aac979
5
10
15
0
0.5
0.2
0.1
IF(AV) (A)
Ptot
(W)
δ = 1
BYV32E-200_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 27 February 2009 4 of 9
NXP Semiconductors BYV32E-200
Dual rugged ultrafast rect ifier diode, 20 A, 200 V
5. Thermal characteristics
6. Characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance from
junction to mounting
base
with heatsink compound; both diodes
conducting --1.6K/W
with heatsink compound; per diode; see
Figure 3 --2.4K/W
Rth(j-a) thermal resistance from
junction to ambient -60-K/W
Fig 3. Transient thermal impedance from junction to mounting base as a function of pulse width
003aac980
1
10
−1
10
Z
th(j-mb)
(K/W)
10
−3
10
−2
t
p
(s)
10
−6
10110
−1
10
−5
10
−3
10
−2
10
−4
t
p
t
p
T
P
t
T
δ =
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
VFforward voltage IF=20A; T
j=25°C - 1 1.15 V
IF=8A; T
j= 150 °C; see Figure 4 - 0.72 0.85 V
IRreverse current VR=200 V; T
j= 100 °C - 0.2 0.6 mA
VR=200V; T
j=25°C - 6 30 µA
Dynamic characteristics
Qrrecovered charge IF=2A; V
R=30V; dI
F/dt = 20 A/µs;
Tj=25°C -812.5nC
trr reverse recovery time IF=1A; V
R=30V; dI
F/dt = 100 A/µs;
ramp recovery; Tj= 25 °C; see Figure 5 -2025ns
IF= 0.5 A; IR= 1 A; step recovery;
measured at reverse current = 0.25 A;
Tj=25°C; see Figure 6
-1020ns
VFR forward recovery
voltage IF=1A; dI
F/dt = 10 A/µs; Tj= 25 °C; see
Figure 7 --1V
BYV32E-200_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 27 February 2009 5 of 9
NXP Semiconductors BYV32E-200
Dual rugged ultrafast rect ifier diode, 20 A, 200 V
Fig 4. Forward current as a function of forward
voltage
Fig 5. Rev erse recovery definitions; ramp reco very
Fig 6. Re verse recovery definitions; step recovery
Fig 7. Forward recovery definitions
0 1.61.20.4 0.8
003aac981
16
8
24
32
0
VF (V)
IF
(A)
(1) (2) (3)
003aac562
trr
time
100 %
25 %
IF
dlF
dt
IRIRM
Qr
003aac56
3
trr
time
0.25 x IR
IF
IR
IR
Qr
IF
001aab912
time
time
V
FRM
V
F
I
F
V
F
BYV32E-200_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 27 February 2009 6 of 9
NXP Semiconductors BYV32E-200
Dual rugged ultrafast rect ifier diode, 20 A, 200 V
7. Package outline
Fig 8. Package outline SOT78 (TO-220AB)
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT78 SC-46
3-lead TO-220AB
SOT78
08-04-23
08-06-13
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
UNIT A
mm 4.7
4.1
1.40
1.25
0.9
0.6
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
15.0
12.8
3.30
2.79
3.8
3.5
A1
DIMENSIONS (mm are the original dimensions)
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
0 5 10 mm
scale
b b1(2)
1.6
1.0
c D
1.3
1.0
b2(2) D1E e
2.54
L L1(1) L2(1)
max.
3.0
p q
3.0
2.7
Q
2.6
2.2
D
D1
q
p
L
123
L1(1)
b1(2)
(3×)
b2(2)
(2×)
ee
b(3×)
AE
A1
c
Q
L2(1)
mounting
base
BYV32E-200_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 27 February 2009 7 of 9
NXP Semiconductors BYV32E-200
Dual rugged ultrafast rect ifier diode, 20 A, 200 V
8. Revision history
Table 7. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BYV32E-200_4 20090227 Product data sheet - BYV32E_SERIES_3
Modifications: •The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•Legal texts have been adapted to the new company name where appropriate .
•Package outline updated.
•Type number BYV32E-200 separated from data sheet BYV32E_SERIES_3
BYV32E_SERIES_3 20010301 Product specification - BYV32E_SERIES_2
BYV32E_SERIES_2 19980701 Product specification - BYV32EB_SERIES_1
BYV32EB_SERIES_1 19960801 Product specification - -
BYV32E-200_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 27 February 2009 8 of 9
NXP Semiconductors BYV32E-200
Dual rugged ultrafast rect ifier diode, 20 A, 200 V
9. Legal information
9.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The la test product
status information is available on the Internet at URL http://www.nxp.com.
9.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warrant ies as to t he accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short dat a sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not b e relied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre va il.
9.3 Disclaimers
General — Information in this document is believed to be accurate an d
reliable. However, NXP Semiconductors does not give an y represent ations or
warranties, expressed or impli ed, as to the accuracy or completeness of such
information and shall have no liability for th e co nsequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for il lustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Rati ngs System of I EC 60134) may cause perman ent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other co nditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may af fect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between inf ormation in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an of fer t o sell product s that is open for accept ance or the gr ant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
9.4 Trademarks
Notice: All refe renced brands, produc t names, service names and trademarks
are the property of their respective ow ners.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status [1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] dat a sheet Production This document contains the product specification.
NXP Semiconductors BYV32E-200
Dual rugged ultrafast rect ifier diode, 20 A, 200 V
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 27 February 2009
Document identifier: BYV32E-200_4
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
11. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1 General description . . . . . . . . . . . . . . . . . . . . . .1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
5 Thermal characteristics . . . . . . . . . . . . . . . . . . .4
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .4
7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .6
8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . .7
9 Legal information. . . . . . . . . . . . . . . . . . . . . . . . .8
9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .8
9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
10 Contact information. . . . . . . . . . . . . . . . . . . . . . .8
