er Discrete POWER & Signal FAIRCFHILD Technologies __ SEMICONDUISTOR m 2N4953 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 19. See PN2222A for characteristics. Absol ute Maxi mum Rati ngs* TA = 25C unless otherwise noted Symbol Parameter Value Units Voeo Collector-Emitter Voltage 30 Vv Vcso Collector- Base Voltage 60 Vv VeBo Emitter-Base Voltage 5.0 Vv Io Collector Current - Continuous 1.0 A Ty, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units 2N4953 Pp Total Device Dissipation 625 mW Derate above 25C 5.0 mw/C Rac Thermal Resistance, Junction to Case 83.3 C/W Roa Thermal Resistance, Junction to Ambient 200 C/W 1997 Fairchild Semiconductor Corporation CS6VNZ Electrical Characteristics NPN General Purpose Amplifier TA = 25C unless otherwise noted (continued) Symbol Parameter Test Conditions Min Max | Units OFF CHARACTERISTICS Vier)cEo Collector-Emitter Breakdown Voltage* | Ic =10 mA, Ip = 0 30 Vv Visrycso Collector-Base Breakdown Voltage lo= 10 pA, Ip = 0 60 Vv Visr)eB0 Emitter-Base Breakdown Voltage le= 10 pA, Io = 0 5.0 Vv loBo Collector Cutoff Current Vop = 40 V, IE=O 50 nA leBo Emitter Cutoff Current Vep=3.0V, Ilo =0 50 nA ON CHARACTERISTICS* Hee DC Current Gain Voe = 10 V, le = 1.0 mA 75 Voce = 10 V, lp = 10mA 150 Voz = 10 V, Ip = 150 mA 200 600 Voe(sat Collector-Emitter Saturation Voltage lo = 150 mA, Ip = 15 mA 0.3 Vv Vee;sat) Base-Emitter Saturation Voltage lc = 150 mA, Ip = 15 mA 13 Vv Vee(on) Base-Emitter On Voltage Vee = 10 V, Ip = 150 mA 1.2 Vv SMALL SIGNAL CHARACTERISTICS Cob Output Capacitance Vop = 10 V, f = 1.0 MHz 8.0 pF Ne Small-Signal Current Gain lo= 20 mA, Voge = 10 V, 2.5 f= 100 MHz ton Turn-On Time Voc = 30 V, Io = 150 mA, 40 ns tort Turn-Off Time lpi1=lpo=15 mA 400 ns *Pulse Test: Pulse Width < 300 ps, Duty Cycle < 2.0% CS6VNZ