N-CHANNEL TRANSISTOR COMCHIP www.comchiptech.com 2N7002 Description The MTN7002N3 is a N-channel enhancement-mode MOS transistor. SOT-23 .119 (3.0) .110 (2.8) .020 (0.5) Top View 2 .037(0.95) .037(0.95) GGate SSourse DDrain Absolute Maximum Ratings .020 (0.5) .020 (0.5) .044 (1.10) .035 (0.90) .006 (0.15)max. 1 .056 (1.40) .047 (1.20) 3 .006 (0.15) .002 (0.05) Equivalent Circuit .103 (2.6) .086 (2.2) Dimensions in inches (millimeters) (Ta=25qC) Parameter Symbol Limits Unit Drain-Sourse Voltage Drain-Gate Voltage (RGS=1M:) Gate-Source Voltage Continuous Drain Current (Ta=25qC) Continuous Drain Current (Ta=100qC) Pulsed Drain Current (Ta=25qC) Total Power Dissipation (Ta=25qC) DERATE Above 25qC Operating Junction Temperature Storage Temperature Thermal Resistance, Junction-to-Ambient Lead Temperature, for 10 second Soldering BVDSS BVDSS VGS ID ID ID Pd 60 60 +/-40 200 115 800 200 0.16 -55~+150 -55~+150 625 260 V V V mA mA mA mW mW/qC qC qC qC/W qC MDS0303007A Tj Tstg *1 *1 *2 Page 1 N-CHANNEL TRANSISTOR COMCHIP www.comchiptech.com Characteristics (Ta=25qC) Symbol BVDSS VGS(th) IGSS/F IGSS/R IDSS ID(ON) Min. 60 1 500 80 - VDS(ON) RDS(ON) GFS Ciss Coss Crss Typ. - Max. 2.5 100 100 1 0.375 3.75 7.5 7.5 50 25 5 Unit V V nA nA uA mA V V mS Test Conditions VGS=0, ID=10uA VDS=2.5V, ID=0.25mA VGS=+20V, VDS=0 VGS=-20V, VDS=0 VDS=60V, VGS=0 VDS>2VDS(ON), VGS=10V ID=50mA, VGS=5V ID=500mA, VGS=10V ID=50mA, VGS=5V ID=500mA, VGS=10V VDS>2VDS(ON), ID=200mA pF VDS=25V, VGS=0, f=1MHz : *Pulse Test : Pulse Width d380us, Duty Cycled2% Characteristic Curves TYPICAL OUTPUT CHARACTERISICS TYTICAL TRANSFER CHARACTERISTIC 1.4 1.4 VGS=8V 1.2 VGS=5V 1.0 DRAIN CURRENT---ID(A) DRAIN CURRENT---ID(A) 1.2 0.8 VGS=4V 0.6 0.4 1.0 0.8 0.6 0.4 0.2 0.2 0.0 0.0 0 1 2 3 4 5 6 DRAIN-SOURCE ---VDS(V) MDS0303007A 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10 GATE-SOURCE VOLTAGE---VGS(V) Page 2 N-CHANNEL TRANSISTOR COMCHIP www.comchiptech.com STATIC DRAIN-SOURCE ON-STATE RESISTANCE VS GATE-SOURCE VOLTSAGE 4.0 3.5 STATIC DRAIN-SOURCE ON-STATE RESISTANCE--RDS(on)(ohm) STATIC DRAIN-SOURCE ON-STATE RESISTANCE--RDS(on)(ohm) STATIC DRAIN-SOURCE ON-STATE RESISTANCE vs DRAIN CURRENT VGS=5 V 3.0 2.5 2.0 VGS=10 1.5 1.0 0.5 0.0 0.0 0.2 0.4 0.6 0.8 DRAIN CURRENT---ID(A) 1.0 10 9 8 7 6 5 4 3 2 1 0 0 1.2 6 8 10 12 14 16 18 20 REVERSE DRAIN CURRENT vs SOURCE-DRAIN VOLTAGE 1000 REVERSE DRAIN CURRENT---IDR(A) 1.00 VGS=10V 100 10 Pulsed 0.10 VGS=10V VGS=0 V 0.01 1 0.001 0.01 0.1 0.00 1 0.50 SWITCHING Tf Td(off) Td(on) 10 Tr 1 0.001 0.01 DRAIN CURRENT---ID(A) MDS0303007A 1.50 CHARACTERISTICS 1000 100 1.00 SOURCE-DRAIN VOLTAGE---VSD(V) DRAIN CURRENT---ID(A) SWITCHING TIMES---(ns) 4 GATE-SOURCE VOLTAGE---VGS(V) FORWARD TRANSFER ADM ITTANCE vs DRAIN CURRENT FORWARD TRANSFER ADMITTANCE---GFS(ms) 2 0.1 1 Page 3