E-Line Transistors SILICON TRANSISTORS Applications Chart 150 BA__100pA tmA 10mA___100mA 14 509 The wide diversity of 7 rx302 ,502 li ion f r i ZTX 300, $00 app! icat $ fo which Pa a L CAC E-Line plastic encapsulated 100 elx30us Sy fn 200 transistors are suitable is 4 \ \ i ma Mee Aes 4 fy (MHz) shown on the diagram. r v \ Additional types designed for more 50 LZ S| \ 100 specialized purposes are listed TY Y Yo \ 4 below: = ah 80 ZTX304 (BCW 18) ZTX 504 (BCW 19) Voeo 217X303 (BCW 16) Z1X503 (BCW 17) 40 ZTX301, 302 (BCW 12, 14) ZTX501, 502 (BCW 13, 15) L . 30 ge ve ZTX300 (BCW 10) e v 2TX500 (BCW 11) 20 MEDIUM LEVEL AC and DC Amps, / / Driver Stages, Relay Drivers. A J Dissipation 10 Ci Low LEVEL \, (All types) SS Suitches, SS 300 mW Choppers. 0 Os 10HA 100A mA 10mA 100mA 1A 0% | Vegisar) | 03 k= 101g 7] 0-2 ,. Z| oF ba eee 0 Type Application Competitive Type | Type Application Competitive Type ZTX330, BCW20 | n-p-n low level, low 2N3707 zTx c noise. 107 BC107 ZTX1 -p-n hi i noi ZTX331, BCW22 | n-p-n low level, low 2N929 ST X08 } npn high gain, low noise BC i108 noise. ZTX510, BSV33 p-n-p switching TIS5O - ZTX511, BCW21 | p-n-p low level, low 2N4058 2TX341, BSV28 n-p-n nixie drivers nBise ZTX342, BSV29 P ZTX531, BCW23 | p-n-p low level, low 2N2604 noise. (complementto | ZTX350 Single P-Channel MNOS _ 2N929) MICRO-E CHARACTERISTICS AT 25C npn p-np MEDIUM CURRENT GENERAL PURPOSE TRANSISTORS BFS38A BFS38 BFS39 BFS40A BFS40 BFS41 Units Parameter Test Conditions Min. | Max. | Min Max Min. | Max. Min. | Max. | Min Max. | Min. | Max. VoBO Rated Max. - 25 _ 45 60 25 _- 45 _ 45 Vv VcEO (sus) Ic=5mA, Igp=0 25 _ 35 45 25 35 45 _ Vv VeBO Rated Max. 5 _ 5 5 _ 5 5 _ 5 Vv tcBo Vcp=VcBo Rated Max, Ip=0 _ 0-5 _ C5 _ -05 _ 0-5 _ 0-5 _ -05 pA leno VeBo=5V, Ic=0 0-5 _ -05 _ -05 _ _ _ uA Vepo=4V, Ic=0 _ _ _ _ _ _ 0-5 - 0-05; 0:05 | pA hee I=100uA, Vep=6V 20 | 20 | _ hee ic=10mA, Vce=6V 50 300 100 300 40 120 50 300 100 300 40 120 hee Ico=50mA, Vce=6V _ _ 50 _ _ _ _ 50 _ _ _ VCE(sat) 1=50mA, igp=5mA _ 0-25 0-25 _ 0.25 _ 0.25 | Vv Ic=10mA, lp=1mA _ 0:35 _ _ _ 0:35 _ _ _ v VBE(sat) Ic =50mA, Ip=SmA _ 1-0 _ 1-0 _ _ _ 1:0 10/]V ic=10mA, Ip=1mA _ 1-0 _ _ _ _ 1-0 _ _ _ Vv fr \co=10mA, Vce=6V, f=100MHz 150 _ 150 _ 150 _ 150 _ 150 150 _ MHz Cob Vep=6V, le=0 5 _ 5 5 5 5 - 5 pF DEVICE TYPES and nearest metal can equivalents npn p-n-p LOW LEVEL AMPLIFICATION BFS36 2N930 BFS37 2N2605 BFS36A 2N929 BFS37A 2N2604 MEDIUM CURRENT BFS38A ZT80 BFS40A ZT180 BFS38 ZT82 BFS40 ZT182 BFS39 ZT83 BFS41 27183 MEDIUM POWER BFS42 2N2221 BFS44 2N2906 BFS43 2N2222A BFS45 2N2907A HIGH-SPEED SWITCHES BSV35A 2N708 BSV37 2N2894 BSV35 2N2369 BSV36 2N2475 V.H.F. AMPLIFIERS BFS46 2N918 BFS46A HIGH-SPEED DIODES BAW63 1N914 BAW63A BAW63B PACKAGE PHYSICAL DATA HIGH SPEED SWITCHING DIODES Pin Connections 2LEAOS 238 78-00 c 2888 __ $ bs rop 8 F 134 Cc t EWP ie pt, lead' q situated in c c F centre . ommon iommon Single cathode anode s 1,3820,20 10 pair pair 1,426" 1 ep b 2,9520,13 37 po ee E B E B oseara B Base CCollector E- Emitter Dimensions in millimetres Ez * Actual size 42