SMA3006 Silicon Wide-band Amplifier MMIC TENTATIVE Absolute Maximum Ratings/Ta=25C Parameters Symbol Absolute Maximum Supply Voltage Vcc 4.0 V Supply Current Icc 10 mA Maximum Power Dissipation PD 50 mW Storage Temperature Tstg -55 to +150 C RF Input Power Pin 0 dBm Units Recommended operation range Parameters Supply Voltage Operating Junction Temperature MIN. TYP. MAX. Units Vcc 2.7 3.0 3.3 V Tj -40 +25 +85 C Symbol Electrical Specifications/Ta=+25C , Vcc=3.0V , ZL=Zs=50 Parameters Symbol Test Conditions MAX. Units 3.5 5 mA 16 18 dB 4.3 5.0 MIN. TYP. Supply Current Icc without input signal Power Gain Gp f=800MHz Noise Figure NF f=800MHz Maximum Operation Frequency fu -3dB from 0.1GHz gain 1.5 2.0 GHz Isolation ISL f=800MHz 21 26 dB Input Return Loss RLin f=800MHz 10 13 dB RLout f=800MHz. 7 10 dB Output Return Loss 2 14 dB Additional Application Information/Ta=+25C , ZL=Zs=50 Parameters Power Gain Noise Figure Symbol Gp NF ISL Isolation Input Return Loss Output Return Loss RLin RLout Test Conditions Vcc=3V, f=1GHz TYP. Units 16 dB Vcc=3V, f=1.5GHz 16 Vcc=3V, f=1GHz 4.5 Vcc=3V, f=1.5GHz 4.7 Vcc=3V, f=1GHz 23 Vcc=3V, f=1.5GHz 23 Vcc=3V, f=1GHz 13 Vcc=3V, f=1.5GHz 11 Vcc=3V, f=1GHz 11 Vcc=3V, f=1.5GHz 12 dB dB dB dB Specifications and information herin are subject to change without notice. SANYO Electric Co., Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN 990408TM2fXHD SMA3006 Equivalent Circuit Package Dimensions Vcc MCP6(unit:mm) 0.15 6 5 4 RF OUTPUT 2.1 1.25 0 to 0.1 2 3 0.65 0.65 1.3 2.0 1 : GND 2 : GND 3 : RF IN 4 : Vcc 5 : GND 6 : RF OUT 0.7 0.9 1 RF INPUT Test Circuit RF Layout RF INPUT 1000pF RF INPUT 1 6 2 5 3 4 50 RF OUTPUT Vcc 3 2 1 4 5 6 50 1000pF 1000pF RF OUTPUT Vcc C Output Power vs. Input Power and Voltage Gp - f 0 30 Vcc=3V -10 Vcc=3.0V Output Power Po (dBm) Power Gain Gp[dB] 20 10 Vcc=2.5V -20 -30 Vcc=2.5V -40 0 0.01 0.1 Freqency f [GHz] 1 -50 -40 -30 -20 -10 0 Input Power Pin (dBm) 981211TM2fXHD-2/2 10