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High Power Bipolar Transistor
Features:
Collector-Emitter sustaining voltage -
VCEO(sus) = 60V (Min.) - TIP31A, TIP32A
= 100V (Min.) - TIP31C, TIP32C
Collector-Emitter saturation voltage -
VCE(sat) = 1.2V (Max.) at IC = 3A
Current gain-bandwidth product fT = 3MHz (Min.) at IC = 500mA
Maximum Ratings
Thermal Characteristics
Characteristic Symbol Max. Unit
Thermal Resistance Junction to Case Rθjc 3.125 °C/W
Characteristic Symbol TIP31A
TIP32A
TIP31C
TIP32C Unit
Collector-Emitter Voltage VCEO 60 100
VCollector-Base Voltage VCBO
Emitter-Base Voltage VEBO 5
Collector Current -Continuous
-Peak IC
3
5A
Base Current IB1
Total Power Dissipation at TC = 25°C
Derate above 25°C PD
40
0.32
W
W/°C
Operation and Storage Junction Temperature Range TJ, TSTG -65 to +150 °C
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High Power Bipolar Transistor
Electrical Characteristics (TC = 25°C unless otherwise noted)
(1) Pulse Test: Pulse width ≤300μs, Duty Cycle ≤2%
(2) fT = hFE • fTEST
Characteristic Symbol Min. Max. Unit
OFF Characteristics
Collector-Emitter Sustaining Voltage (1)
IC = 30mA, IB = 0 TIP31A, TIP32A
TIP31C, TIP32C
VCEO(sus)
60
100 - V
Collector Cut off Current
VCE = 30V, IB = 0 TIP31A, TIP32A
VCE = 60V, IB = 0 TIP31C, TIP32C
ICEO - 0.3
mA
Collector Cut off Current
VCE = 60V, VEB = 0 TIP31A, TIP32A
VCE = 100V, VEB = 0 TIP31C, TIP32C
ICES - 0.2
Emitter Cut off Current
VEB = 5V, IC = 0 IEBO - 1
ON Characteristics (1)
DC Current Gain
IC = 1A, VCE = 4V
IC = 3A, VCE = 4V
hFE
25
10
-
50 -
Collector-Emitter Saturation Voltage
IC = 3A, IB = 375mA VCE(sat) - 1.2
V
Base-Emitter On Voltage
IC = 3A, VCE = 4V VBE(on) - 1.8
Dynamic Characteristics
Current Gain-Bandwidth Product (2)
IC = 500mA, VCE = 10V, fTEST = 1MHz fT3 - MHz
Small Signal Current Gain
IC = 500mA, VCE = 10V, f = 1kHz hFE 20 - -
Figure - 1 Power Derating
PD, Power Dissipation (Watts)
TC, Temperature (°C)
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High Power Bipolar Transistor
RB and RC Varied to Obtain Desired Current Levels
Figure - 4 DC Current Gain
IC, Collector Current (Amp)
Figure - 2 Switching Time Equivalent Circuit Figure - 3 Turn-On Time
t, Time (µs)
Figure - 5 Turn-Off Time
IC, Collector Current (Amp)
t, Time (µs)
IC, Collector Current (Amp)
hFE, DC Current Gain
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High Power Bipolar Transistor
Figure - 7 Collector Saturation Region
IC, Collector Current (Amp)
Figure - 6 Active Region Safe Operating Area
VCE, Collector−Emitter Voltage (Volts)
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown safe operating area curves indicate IC-VCE limits
of the transistor that must be observed for reliable operation
i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure - 6 curve is based on TJ(PK) = 150°C; TC is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(PK) ≤150°C,
At high case temperatures, thermal limitation will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
VCE, Collector-Emitter
Voltage (Volts)
IB, Base Current (mA) VR, Reverse Voltage (Volts)
Capacitance (pF)
Figure - 8 Capacitances
IC, Collector Current ( µa)
V, Voltage (Volts)
Figure - 9 “ON” Voltage
IC, Collector Current (Amps)
Figure - 10 Collector Cut-off Region
VBE, Base−Emitter Voltage (Volts)
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High Power Bipolar Transistor
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Part Number Table
Description Part Number
Transistor, NPN, TO-220 TIP31A
TIP31C
Transistor, PNP, TO-220 TIP32A
TIP32C
Pin Conguration:
1. Base
2. Collector
3. Emitter
4. Collector(Case) Dimensions : Millimetres
Dimensions Min. Max.
A 14.68 15.31
B 9.78 10.42
C 5.01 6.52
D 13.06 14.62
E 3.57 4.07
F 2.42 3.66
G 1.12 1.36
H 0.72 0.96
I 4.22 4.98
J 1.14 1.38
K 2.2 2.97
L 0.33 0.55
M 2.48 2.98
O 3.7 3.9