www.nxp.com
Application and design manual
for High Performance RF products
May 2011
Date of release: May 2011
Document order number: 9397 750 17087
Printed in the Netherlands
© 2011 NXP B.V.
All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner. The information presented in this document does not form part of any quotation or contract,
is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by
the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
RF Manual 15th edition
RF Manual 15th edition
192-53520-0411-1235
www.climatepartner.com
NXP_04_0024_RF_Manual_15_Cover_v8.indd 1 27/04/11 14:44
4NXP Semiconductors RF Manual 15th edition
NXP's RF Manual is one of the most important reference tools on the market for
today’s RF designers. It features our complete range of RF products, from low- to
high-power signal conditioning and high-speed data converters.
High Performance RF for the most demanding applications
When it comes to the most demanding RF applications, the first thing on the designer's mind is to meet the specified
performance. So that is exactly what NXP enables you to do, with the added benefits of silicon-based, volume
manufacturing process technologies. That means you can design your systems to the highest specifications, while still
retaining potential trade-offs with respect to efficiency, power, ruggedness, consistency, and integration levels.
Shipping more than four billion RF products annually, NXP is a clear industry leader in High Performance RF. From
satellite receivers, cellular base stations, and broadcast transmitters to ISM (Industrial, Scientific, and Medical) and
aerospace and defense applications, you will find the High Performance RF products you need at NXP. And constant
innovation ensures you always have the most effective solutions at your fingertips – whether it's innovative Doherty
power amplifier architectures, JESD204A CGVTM serialized data interfaces, or tiny GPS LNAs.
So if you're looking to improve your RF performance, design a highly efficient signal chain, or break new ground with an
innovative ISM application, then NXP's creative thinking and expert support can help you every step of the way.
High Performance RF design challenge
The day-to-day work offers many challenges to the RF designer, from the high diversity of signals to integration, or simply
the time spent. We recently started a design challenge (www.hprf-design-challenge.nxp.com). It offers a forum for RF
enthusiasts to walk with us through the steps of a design, from concept to prototype. This is, in essence, the goal of the
RF Manual – to make design work easier.
What’s new?
This RF Manual provides updated information on RF applications clustered in different segments. The segments are as
follows: wireless and broadband communication infrastructure, TV and satellite, portable devices, automotive, ISM, and
aerospace and defense.
We describe in detail the new developments in our core technologies, QUBiC4 and LDMOS. We have also added GaN
technology to our product offering; this key technology lets high-power amplifiers deliver very high efficiency in next
generation wireless communication systems.
NXP’s RF Manual makes
design work much easier
High Performance RF for the most demanding applications
5NXP Semiconductors RF Manual 15th edition
New products include GaN power amplifiers, a complete line of overmolded plastic (OMP) RF power transistors and MMICs, and
our eighth generation LDMOS transistors (Gen8). Next-generation devices and improved products include GPS LNAs, medium
power amplifiers, IF gain blocks, LO generators, satellite LNB ICs, and CATV modules.
Our portfolio for the wireless communication infrastructure has expanded, with a comprehensive set of best-in-class Doherty
amplifier designs, a broad selection of amplifiers (medium power, variable gain, low noise), mixers, IQ modulators, and our
JESD204A-compliant, high-speed DACs and ADCs.
“I’m proud to present the 15th edition of our RF Manual. It covers NXP’s entire range of RF products and solutions in one
comprehensive catalog, and I’m convinced that you’ll find this version the most compelling and useful yet.”
Kind regards,
John Croteau
Sr. Vice President & General Manager
Business Line High Performance RF
RF Manual web page
www.nxp.com/rfmanual
6NXP Semiconductors RF Manual 15th edition
Contents
1 Products by application 9
1.1 Wireless communication infrastructure__________________________________________________________________________________________________________________________________________________________________ 9
1.1.1 Base stations (all cellular standards and frequencies) ______________________________________________________________________________________________________________________________ 9
1.1.2 Point-to-point ___________________________________________________________________________________________________________________________________________________________________________________________12
1.1.3 Repeater ___________________________________________________________________________________________________________________________________________________________________________________________________14
1.2 Broadband communication infrastructure ____________________________________________________________________________________________________________________________________________________________15
1.2.1 CATV optical (optical node with multiple out-ports)________________________________________________________________________________________________________________________________15
1.2.2 CATV electrical (line extenders) ______________________________________________________________________________________________________________________________________________________________16
1.3 TV and satellite ______________________________________________________________________________________________________________________________________________________________________________________________________17
1.3.1 Network interface module (NIM) for TV reception___________________________________________________________________________________________________________________________________17
1.3.2 Basic TV tuner ___________________________________________________________________________________________________________________________________________________________________________________________19
1.3.3 Satellite outdoor unit, low noise block (LNB) for multiple users ____________________________________________________________________________________________________________ 20
1.3.4 Satellite multi-switch box - 4x4 (up to 16x16) / DiSEqC / SMATV _____________________________________________________________________________________________________________21
1.3.5 VSAT ________________________________________________________________________________________________________________________________________________________________________________________________________ 22
1.4 Portable devices ____________________________________________________________________________________________________________________________________________________________________________________________________24
1.4.1 GPS ___________________________________________________________________________________________________________________________________________________________________________________________________________24
1.4.2 FM radio __________________________________________________________________________________________________________________________________________________________________________________________________ 25
1.4.3 Cellular receive _________________________________________________________________________________________________________________________________________________________________________________________26
1.4.4 802.11n WLAN (dual concurrent) ______________________________________________________________________________________________________________________________________________________________27
1.4.5 Generic RF front-end ________________________________________________________________________________________________________________________________________________________________________________28
1.5 Automotive
___________________________________________________________________________________________________________________________________________________________________________________________________________ 29
1.5.1
Active antenna, e.g. SDARS, GPS
__________________________________________________________________________________________________________________________________________________________________
29
1.5.2 Remote keyless entry, RF generic front-end with dedicated antenna for reception and transmission __________________________________________________ 30
1.5.3 Tire pressure monitoring system ______________________________________________________________________________________________________________________________________________________________31
1.5.4 Car radio receiver (CREST ICs: TEF6860HL, TEF6862HL) ________________________________________________________________________________________________________________________32
1.6 Industrial, scientific & medical (ISM) ____________________________________________________________________________________________________________________________________________________________________ 33
1.6.1 Broadcast / ISM (10 - 1500 MHz range) __________________________________________________________________________________________________________________________________________________ 33
1.6.2 E-metering, RF generic front-end with a single antenna / ZigBee ______________________________________________________________________________________________________________34
1.6.3 RF Microwave furnace application __________________________________________________________________________________________________________________________________________________________ 35
1.6.4 RF plasma lighting ___________________________________________________________________________________________________________________________________________________________________________________ 36
1.6.5 Medical imaging ______________________________________________________________________________________________________________________________________________________________________________________37
1.7 Aerospace and defense ________________________________________________________________________________________________________________________________________________________________________________________ 38
1.7.1 Microwave products for avionics, L- and S-band radar applications _____________________________________________________________________________________________________ 38
2 Focus applications, products & technologies 40
2.1 Wireless communication infrastructure _______________________________________________________________________________________________________________________________________________________________ 40
2.1.1 VGAs with superior linearity for enhanced system performance ____________________________________________________________________________________________________________ 40
2.1.2 Doherty amplifier technology for state-of-art wireless infrastructure _____________________________________________________________________________________________________42
2.1.3 The new generation of LDMOS RF power for wireless infrastructures: NXP's Gen8 ______________________________________________________________________________ 44
2.2 Broadband communication infrastructure ___________________________________________________________________________________________________________________________________________________________ 45
2.2.1 Connecting people, protecting your network: NXP's CATV C-family for the Chinese SARFT standard ________________________________________________ 45
2.2.2 Highly efficient line-up of 1 GHz GaAs modules for sustainable CATV networks __________________________________________________________________________________ 48
2.3 TV and satellite _____________________________________________________________________________________________________________________________________________________________________________________________________ 50
2.3.1 LNAs for TV/STB tuners with programmable gain __________________________________________________________________________________________________________________________________ 50
2.3.2 Complete satellite portfolio for all LNB architectures______________________________________________________________________________________________________________________________52
2.3.3 VSAT, 2-way communication via satellite _________________________________________________________________________________________________________________________________________________ 54
2.3.4 Low noise LO generators for microwave & mmWave radios ___________________________________________________________________________________________________________________ 56
2.4 Portable devices ___________________________________________________________________________________________________________________________________________________________________________________________________ 57
2.4.1 QUBiC4X SiGe:C LNAs for GPS, GloNass and Galileo with AEC-Q100 qualification ______________________________________________________________________________57
2.5 Industrial, scientific & medical ______________________________________________________________________________________________________________________________________________________________________________59
2.5.1 Medical applications driven by RF power ________________________________________________________________________________________________________________________________________________59
2.5.2 RF-driven plasma lighting________________________________________________________________________________________________________________________________________________________________________ 60
2.5.3 QUBiC4 Si and SiGe:C transistors for any RF function _____________________________________________________________________________________________________________________________61
2.5.4 Buidling on decades of innovation in microwave and radar ___________________________________________________________________________________________________________________ 62
2.5.5 Digital broadcasting at its best _______________________________________________________________________________________________________________________________________________________________ 64
2.5.6 Broadband medium power amplifiers for all 400 to 2700 MHz applications __________________________________________________________________________________________ 65
2.6 Technology ____________________________________________________________________________________________________________________________________________________________________________________________________________ 66
2.6.1 Boost efficiency and lower system cost in wireless infrastructure with GaN __________________________________________________________________________________________ 66
2.6.2 Looking for a leader in SiGe:C? You've just found us! ______________________________________________________________________________________________________________________________67
2.6.3 Completing NXP's RF power transistor offering: products in plastic packages (OMP) ___________________________________________________________________________69
7NXP Semiconductors RF Manual 15th edition
3 Products by function 70
3.1 New products ______________________________________________________________________________________________________________________________________________________________________________________________________70
3.2 RF diodes ____________________________________________________________________________________________________________________________________________________________________________________________________________73
3.2.1 Varicap diodes _________________________________________________________________________________________________________________________________________________________________________________________73
3.2.2 PIN diodes _______________________________________________________________________________________________________________________________________________________________________________________________74
3.2.3 Band switch diodes __________________________________________________________________________________________________________________________________________________________________________________76
3.2.4 Schottky diodes ________________________________________________________________________________________________________________________________________________________________________________________76
3.3 RF Bipolar transistors ________________________________________________________________________________________________________________________________________________________________________________________ 77
3.3.1 Wideband transistors _______________________________________________________________________________________________________________________________________________________________________________77
3.4 RF ICs _________________________________________________________________________________________________________________________________________________________________________________________________________________ 80
3.4.1 RF MMIC amplifiers and mixers _______________________________________________________________________________________________________________________________________________________________ 80
3.4.2 Wireless infrastructures ICs _____________________________________________________________________________________________________________________________________________________________________ 82
3.4.3 Satellite LNB RF ICs _________________________________________________________________________________________________________________________________________________________________________________ 82
3.4.2 Low noise LO generators for VSAT and general microwave applications _______________________________________________________________________________________________ 83
3.5 RF MOS transistors ____________________________________________________________________________________________________________________________________________________________________________________________ 83
3.5.1 JFETs _______________________________________________________________________________________________________________________________________________________________________________________________________ 83
3.5.2 MOSFETs _________________________________________________________________________________________________________________________________________________________________________________________________ 85
3.6 RF Modules ________________________________________________________________________________________________________________________________________________________________________________________________________ 87
3.6.1 CATV push-pulls ______________________________________________________________________________________________________________________________________________________________________________________87
3.6.2 CATV push-pulls 1 GHz ____________________________________________________________________________________________________________________________________________________________________________87
3.6.3 CATV power doublers _____________________________________________________________________________________________________________________________________________________________________________ 88
3.6.4 CATV optical receivers ____________________________________________________________________________________________________________________________________________________________________________ 88
3.6.5 CATV reverse hybrids ______________________________________________________________________________________________________________________________________________________________________________ 88
3.7 RF power transistors __________________________________________________________________________________________________________________________________________________________________________________________ 89
3.7.1 Base station transistors ___________________________________________________________________________________________________________________________________________________________________________ 89
3.7.2 Broadcast / ISM (industrial, scientific, medical) RF power transistors _____________________________________________________________________________________________________ 92
3.7.3 Microwave LDMOS RF power transistors _________________________________________________________________________________________________________________________________________________93
3.8 High-speed data converters _______________________________________________________________________________________________________________________________________________________________________________94
4 Design support 95
4.1 S-parameters ______________________________________________________________________________________________________________________________________________________________________________________________________ 95
4.2 Simulation models ______________________________________________________________________________________________________________________________________________________________________________________________ 95
4.2.1 Spice models ____________________________________________________________________________________________________________________________________________________________________________________________95
4.2.2 Interactive datasheet _______________________________________________________________________________________________________________________________________________________________________________95
4.2.3 Simulation models for RF power devices _________________________________________________________________________________________________________________________________________________96
4.3 Application notes _______________________________________________________________________________________________________________________________________________________________________________________________ 96
4.4 Demo boards
_____________________________________________________________________________________________________________________________________________________________________________________________________ 96
4.4.1 RF transistors, MMIC & IC demo boards __________________________________________________________________________________________________________________________________________________96
4.4.2 RF power transistor demo boards ____________________________________________________________________________________________________________________________________________________________97
4.4.3 High-speed converter demo boards ________________________________________________________________________________________________________________________________________________________97
4.5 Samples
_______________________________________________________________________________________________________________________________________________________________________________________________________________ 97
4.6 Datasheets _________________________________________________________________________________________________________________________________________________________________________________________________________ 97
4.7 Design-in support ______________________________________________________________________________________________________________________________________________________________________________________________ 98
4.8 Interactive selection guides _______________________________________________________________________________________________________________________________________________________________________________ 98
5 Cross-references & replacements ________________________________________________________99
5.1 Cross-references: manufacturer types versus NXP types _______________________________________________________________________________________________________________________ 99
5.2 Cross-references: NXP discontinued types versus NXP replacement types__________________________________________________________________________________________109
6 Packing and packaging information _____________________________________________________ 111
6.1 Packing quantities per package with relevant ordering code ________________________________________________________________________________________________________________ 111
6.2 Marking codes list __________________________________________________________________________________________________________________________________________________________________________________ 114
7 Abbreviations _________________________________________________________________________ 116
8 Contacts and web links ________________________________________________________________ 117
9 Product index _________________________________________________________________________ 118
9NXP Semiconductors RF Manual 15th edition
Products
by application
1. Products by application
1.1 Wireless communication infrastructure
The block diagram above shows base station transmit (upper part, Tx) and receive (lower part, Rx) functions, and includes the Tx feedback function (middle part, Tx feedback).
The signals generated in the "Digital Baseband & Control" block follow the air interface standard requirements. These signals are interfaced to the DAC via serial
interface SER. The SER can use the LVDS or JEDEC standard. After the signals are fed to the I-DAC and Q-DAC, they are converted to the analog domain. Before
the I and Q signals enter the IQ modulator, they are first low-pass filtered to remove any aliasing signals. At the IQ modulator, the signals are up-converted to
RF using an LO signal coming from the PLL/VCO device, typically called the LO generator. Due to device aging and variation in cell load, the up-converted signals
are fed to the VGA to control the power level. An additional band pass filter is needed to remove the out-of-band spurs. The clean signal is fed to the RF power
board, where the desired transmit power is made. Finally, the RF power signal is fed to the antenna via a duplexer.
Directly after the final stage amplifier, a signal coupler picks up a certain amount of the RF signal, which is attenuated and then down-mixed using the IF Mixer.
This signal is called the observation signal, and is used to derive coefficients for the digital pre-distortion algorithm. Since power levels vary, the observation is first
fed to the VGA to control the power level, and after band pass filtering, the signal is converted to the digital domain using an ADC. The same serial interface is used
to send the digital signals to the baseband processor.
At the receiver, the received signal directly after the duplexer is fed to the LNA for direct amplification, since the received signal level is quite low. If the first LNA
is mounted in the tower top, a long RF cable is used to interface the RF signals with a base transceiver station (BTS). A second LNA is used to amplify the received
signals. Band pass filtering is applied to reduce the out-of-band signals levels before these signals are applied to the IF mixer. Signal levels that change dramatically
require a VGA to maintain the full scale ranges of the I-ADC and Q-ADC for optimal conversion performance. Low pass filtering is used before the ADC to remove
the aliasing signals. These digital signals are interfaced to the baseband using a serial interface such as JEDEC.
The sample clocks and LO signals are derived from clock cleaners and PLLs respectively. This is denoted as Clock and PLL / VCO in the block diagram. This set-up
is required to make a synchronized system. Typically denoted in SNRs, and in order to improve reception quality, the receive function is equipped with a second
receiver, which is also called a diversity receiver.
X
PLL
DIGITAL BASEBAND & CONTROL
SER Q-DAC
PLL
VCO
SER I-DAC
SER ADC
LPF
LPF
BPF
I/Q-MOD
mixer
mixer
VGA Tx BPF MPA HPA Isolator
POWER AMPLIFIER
antenna
Tx/Rx
antenna
Rx1
90
0
X
X
mixer
VGA IF mixer
PLL
VCO duplexer
Rx BPF LNA LNA
TOWER
MOUNTED
AMPLIFIER
Rx BPF LNA LNA
X
LPF VGA
PLL
SER ADC
SER ADC
X
LPF VGA
PLL
VCO
IF mixer
IF mixer
µC
µC
RF POWERRF SMALL SIGNALDATACONVERTERSPROCESSING
1.1.1 Base stations (all cellular standards and frequencies)
See also brochure: 'Your partner in Mobile Communication Infrastructure design', document number 9397 750 16837.
Application diagram
10 NXP Semiconductors RF Manual 15th edition
Product highlight:
BLF7G27L(S)-100/140
Utilising NXP’s Gen7 LDMOS technology, this pair of transistors is
designed to give leading performance in 2.7 GHz LTE applications.
The BLF7G27L(S)-100 is designed to be the main amplifier, and the
BLF7G27L(S)-140 the peak amplifier, in asymmetrical Doherty designs.
This pair, along with others at different operational frequencies, are
already firm industry favourites with many design wins around the world.
Features
` Asymmetrical Doherty efficiency 37.6% with 15.2 dB gain at 47.5 dB
output power
`Capable of 26-32 V operation
`Extremely low thermal resistance
`Consistent device performance
`Unrivalled ruggedness
Recommended products
Function Product fmin
(MHz)
fmax
(MHz)
P1dB
(W)
GP
(dB) Package Type
HPA
MMIC 920 960 30 29 SOT822-1 BLM6G10-30(G)
Final
920 960 250 19 SOT502 BLF7G10L(S)-250
700 1000 80 19 SOT502 BLF8G10L(S)-80
700 1000 140 19 SOT1204 BLP7G10S-140G
700 1000 160 19 SOT502 BLF8G10L(S)-160
500 1000 300 19 SOT1121 BLF6H10L(S)-300P
700 1000 300 19 SOT539 BLF8G10L(S)-300P
1805 1880 250 18 SOT539 BLF7G20L(S)-250P
Integrated Doherty 2010 2025 50 14,5 SOT1130 BLD6G21L(S)-50
Final 1800 2050 140 19 SOT1204 BLP7G21(S)-140P(G)
Driver/Final 2110 2170 40 19 SOT1121 BLF6G22L(S)-40P
Driver 1800 2200 10 19 SOT1179 BLP7G22-10
Final 2000 2200 160 18 SOT502 BLF7G22L(S)-160
Driver/Final 2500 2700 40 17,5 SOT1121 BLF6G27L(S)-40P
Integrated Doherty 2500 2700 50 17,5 SOT1130 BLD7G27S-50
Final
2500 2700 100 17,5 SOT502 BLF7G27L(S)-100
2500 2700 140 17 SOT502 BLF7G27L(S)-140
3400 3600 100 13 SOT502 BLF6G38(LS)-100
3500 3800 90 13 SOT1246B BLF7G38LS-90P
Function Freq band
(MHz)
PPEAK
(dBm)
POUT-AVG
(dBm)
VDS
(V)
Gain
(dB)
Drain Eff.
(%) Type Main transistor Peak transistor
HPA
Doherty designs
728-768 58 50 32 20.5 47 SYM BLF6G10LS-200RN BLF6G10LS-200RN
920-960 57.3 49.3 30 16 50 ASYM BLF8G10LS-160 BLF7G10LS-250
1476-1511 58.1 49.6 28 16 42 ASYM BLF7G15LS-200 BLF7G15LS-300P
1805-1880 58.6 51 28 16 47.6 3-WAY BLF7G20LS-200 2x BLF7G20LS-200
1930-1990 58.2 50 28 16 40 SYM BLF7G20LS-250P BLF7G20LS-250P
2110-2170 47 39 28 13 38 SYM BLD6G22L(S)-50 BLD6G22L(S)-50
2110-2170 57.2 49.2 28 16 47 3-WAY BLF7G22LS-160 2x BLF7G22L(S)-160
2300-2400 55 47.5 28 15.2 44 ASYM BLF7G24LS-100 BLF7G24LS-140
2500-2700 50.3 42.3 28 14.5 39 SYM 1/2 BLF7G27LS-90P 1/2 BLF7G27LS-90P
3400-3600 51 43 28 11.5 32 SYM BLF6G38-50 BLF6G38-50
11NXP Semiconductors RF Manual 15th edition
Products
by application
Product highlight:
DAC1408D750 dual 14-bit DAC with JESD204A interface
Optimized for high-speed applications, such as 2.5/3/4G wireless,
video broadcast, and instrumentation, this advanced 14-bit DAC has
selectable interpolating filters and a four-lane CGV™ serial interface
compliant with JEDEC JESD204A standard.
Features
`Dual-channel, 14-bit resolution
`750 Msps maximum output rate
`Interpolation filters: 2x, 4x, 8x
`Four-lane JEDEC JESD204A serial digital input
`32-bit programmable NCO frequency synthesizer with low-power option
`MDS (Multi-DAC Synchronization)
`SPI interface
`HVQFN64 package
Function Product Package Type
Discrete
attenuator RF diode PIN diode
SOT753 BAP64Q
SOT753 BAP70Q
Various^ BAP64
Function Product Package Type
LNA (low noise
amplifier)
RF transistor SiGe:C transistor SOT343F
BFU725F/N1
BFU690F
BFU730F
BFU760F
BFU790F
MMIC SiGe:C MMIC SOT650
BGU7051
BGU7052
BGU7053
Function Product Gain range Package Type
Single VGA
(variable gain
amplifier)
MMIC 23 dB SOT617 BGA7202
31 dB BGA7204
Function Product Gain range Package Type
Dual VGA
(variable gain
amplifier)
MMIC 24 dB SOT617 BGA7350
28 dB BGA7351
Function Product PL (1dB) @ 940 MHz Package Type
MPA
(medium
power
amplifier)
MMIC
25 dBm SOT908 BGA7124
24 dBm SOT89 BGA7024
28 dBm SOT908 BGA7127
28 dBm SOT89 BGA7027
30 dBm SOT908 BGA7130*
Function Product Frequency Package Type
Dual mixer MMIC 0.7 - 1.2 GHz SOT1092 BGX7220*
1.7 -2.7 GHz BGX7221*
Function Product Noise Package Type
PLL + VCO
(LO generator) MMIC 131 dBc/Hz @ 1 MHz
offset @ 5.3 GHz SOT617 BGX7300*
Function Product NFL Package Type
IQ modulator MMIC -159 dBm/Hz SOT616 BGX7100*
* = check status at 3.1 new products, as this type has not been released
for mass production.
^ = SOD523, SOD323, SOT23 & SOT323
Function Product Max. sampling
frequency # of bits Interface Type
Data converter
Dual-channel DAC
650 Msps 14 LVCMOS DAC1405D650
160 Msps 14 LVCMOS DAC1405D160
125 Msps 14 LVCMOS DAC1401D125
750 Msps 14 JESD204A DAC1408D750
Single-channel ADC
80 Msps 12 LVCMOS ADC1207S080
125 Msps 14 LVCMOS&LVDS DDR ADC1415S125
125 Msps 14 LVCMOS&LVDS DDR ADC1410S125
Dual-channel ADC
125 Msps 11 LVCMOS&LVDS DDR ADC1112D125
125 Msps 14 LVCMOS&LVDS DDR ADC1412D125
125 Msps 14 JES204A ADC1413D125
12 NXP Semiconductors RF Manual 15th edition
Function Product Package Type
IF
IF gain block MMIC
SOT363
BGA2800
BGA2801
BGA2815
BGA2816
MMIC
General
purpose
wideband
amplifiers
BGM1012
BGA2714
BGA2748
BGA2771
Function Product Package Type
LNA
RF MMIC SiGe:C
MMIC
SOT891 BGU7003
SOT650
BGU7051
BGU7052
BGU7053
RF transistor
SiGe:C
transistor SOT343F
BFU725F/N1
BFU710F
BFU730F
Wideband
transistor
SOT343R BFG425W
BFG424W
SOT143R BFG325/XR
1.1.2 Point-to-point
Application diagram
brb406
INDOOR UNIT
OUTDOOR UNIT
REF REF
to/from
IDU
LNA
VGA
IF
MPA
BUF
PMU PMU
MPX
PLL VCO
MPX
LPF
BPF
ANTENNA
DATA
INTERFACE
ANALOG
VGA
0
90
POWER
SUPPLY
DIGITAL
SIGNAL
PROCESSOR
LNA LNA
VGA
VGA
VGAVGA
SYNTH PLL
PLL
IF
MPA PA
PLL VCO 0
90
Recommended products
Indoor unit
Function Product Gain range Package Type
Single VGA
(variable gain
amplifier)
MMIC 23 dB SOT617 BGA7202
31 dB BGA7204
Function Product Gain range Package Type
Dual VGA
(variable gain
amplifier)
MMIC 24 dB SOT617 BGA7350
28 dB BGA7351
Function Product PL (1dB) @
940 MHz Package Type
MPA
(medium
power
amplifier)
MMIC
17 dBm
SOT89
BGA6289
20 dBm BGA6489
21 dBm BGA6589
25 dBm SOT908 BGA7124
24 dBm SOT89 BGA7024
28 dBm SOT908 BGA7127
28 dBm SOT89 BGA7027
30 dBm SOT908 BGA7130*
Function Product NFL Package Type
IQ
modulator MMIC - 159 dBm/Hz SOT616 BGX7100*
* = check status at 3.1 new products, as this type has not been released
for mass production.
13NXP Semiconductors RF Manual 15th edition
Products
by application
Outdoor unit
Function Product Gain range Package Type
Single VGA
(variable
gain
amplifier)
MMIC
23 dB
SOT617
BGA7202
31 dB BGA7204
Function Product PL (1dB)
@ 940 MHz Package Type
MPA
(medium
power
amplifier)
MMIC
17 dBm
SOT89
BGA6289
20 dBm BGA6489
21 dBm BGA6589
25 dBm SOT908 BGA7124
24 dBm SOT89 BGA7024
28 dBm SOT908 BGA7127
28 dBm SOT89 BGA7027
30 dBm SOT908 BGA7130*
Function Product Package Type
Buffer RF transistor SiGe:C
transistor SOT343F
BFU725F/N1
BFU730F
BFU760F
BFU790F
Function Product Package Type
LNA RF transistor SiGe:C
transistor SOT343F
BFU725F/N1
BFU730F
BFU760F
BFU790F
Function Product Package Type
IF
IF gain block MMIC
SOT363
BGA2800
BGA2801
BGA2815
BGA2816
BGA2850
BGA2865
BGA2866
MMIC
General
purpose
wideband
amplifiers
BGM1014
BGM1013
BGM1012
BGA2714
Function Product Gain range Package Type
Dual VGA
(variable
gain
amplifier)
MMIC
24 dB
SOT617
BGA7350
28 dB BGA7351
Function Product Noise Package Type
PLL + VCO
(LO
generator)
MMIC
-131 dBc/Hz @
1 MHz offset
@ 5.3 GHz
SOT617 BGX7300*
Function Product Package Type
Oscillator RF transistor
Wideband
transistor SOT343R BFG424W
BFG425W
SiGe:C
transistor SOT343F
BFU725F/N1
BFU730F
BFU760F
BFU790F
* = check status at 3.1 new products, as this type has not been released for
mass production.
Product highlight:
BGA7350 MMIC variable gain amplifier
The BGA7350 MMIC is a dual independent digitally controlled IF
variable gain amplifier (VGA) operating from 50 to 250 MHz. Each IF
VGA amplifies with a gain range of 24 dB and, at its maximum gain
setting, delivers 17 dBm output power at 1 dB gain compression
and a superior linear performance. The BGA7350 is optimized for a
differential gain error of less than ±0.1 dB for accurate gain control
and has a total integrated gain error of less than ±0.4 dB. It is housed
in a 32-pin leadless HVQFN package (5 x 5 mm).
Features
` Dual independent digitally controlled 24 dB gain range VGAs,
with 5-bit control interface
`50 to 250 MHz frequency operating range
`Gain step size: 1 dB ± 0.1 dB
`18.5 dB power gain
`Fast gain stage switching capability
`17 dBm output power at 1 dB gain compression
`5 V single supply operation with power-down control
`Logic-level shutdown control pin reduces supply current
`ESD protection at all pins
`Unconditionally stable
NXP BTS Tx component demonstrator board
14 NXP Semiconductors RF Manual 15th edition
1.1.3 Repeater
Application diagram
Product highlight:
BGX7221 MMIC dual down-mixer
The BGX7221 combines a pair of high performance, high linearity
down-mixers for use in receivers that have a common local oscillator
used with, for example, main and diversity paths. The device covers
frequency bands from 1700 to 2700 MHz with an extremely flat
behavior.
Features
`8.5 dB conversion gain over all bands
`13 dBm input, 1 dB compression point
`25.5 dBm input third-order intercept point
`10 dB (typ) small signal noise figure
`Integrated active biasing
`Single +5 V supply operation
`Power-down per mixer with hardware control pins
`Low bias current in power-down mode
`Matched 50 Ω single-ended RF and LO input impedances
`ESD protection at all pins
Function Product Max. sampling
frequency # of bits Interface Type
Data converter
Dual-channel DAC
650 Msps 14 LVCMOS DAC1405D650
160 Msps 14 LVCMOS DAC1405D160
125 Msps 14 LVCMOS DAC1401D125
750 Msps 14 JESD204A DAC1408D750
Dual-channel ADC
125 Msps 11 LVCMOS&LVDS DDR ADC1112D125
125 Msps 14 LVCMOS&LVDS DDR ADC1412D125
125 Msps 14 JES204A ADC1413D125
Function Product fmin (MHz) fmax (MHz) P1dB (W) GP (dB) Package Type
HPA
Driver/Final 1450 1550 40 22 SOT1112A BLF6G15L-40BRN
1800 2000 40 18.8 SOT608A BLF6G20-40
Integrated Doherty 2010 2025 50 14.5 SOT1130B BLD6G21LS-50
Driver/Final 1 2200 10 18.5 SOT538A BLF6G21-10G
MMIC 2100 2200 30 29.5 SOT834-1 BLM6G22-30
Integrated Doherty 2110 2170 50 14 SOT1130B BLD6G22LS-50
Driver/Final
2300 2700 75 17 SOT1121B BLF7G27LS-75P
3400 3800 25 15 SOT608B BLF6G38S-25
3400 3800 50 14 SOT502A BLF6G38-50
Function Product PL (1 dB) @ 940 MHz Package Type
MPA
(medium power amplifier) MMIC
21 dBm SOT89 BGA6589
25 dBm SOT908 BGA7124
24 dBm SOT89 BGA7024
28 dBm SOT908 BGA7127
28 dBm SOT89 BGA7027
30 dBm SOT908 BGA7130
Function Product Gain range Package Type
Dual VGA
(variable gain amplifier) MMIC 24 dB SOT617 BGA7350
28 dB BGA7351
Function Product Frequency range Package Type
Dual mixer MMIC 1.7 - 2.7 GHz SOT1092 BGX7220*
0.7 - 1.2 GHz BGX7221*
Function Product Package Type
LNA MMIC SOT650
BGU7051
BGU7052
BGU7053
Function Product Noise Package Type
PLL + VCO
(LO generator) MMIC -131 dBc/Hz @ 1 MHz
offset @ 5.3 GHz SOT617 BGX7300*
* = check status at 3.1 new products, as this type has not been released for mass production.
brb631
I-DAC
Q-DAC
PA
Tx0
LPF
LPF
LPF
LPF
RF SAW
RF SAW
PA
VGA
VGA
Tx1
Rx0
Rx1
Dual mixer Dual DAC
PLL
VCO
LO Signal
Clock
Recovery
jitter
cleaner
DDC/
DUC
Filtering
mixer
mixer
ADC
ADC
Dual ADC Dual VGA Dual mixer
mixer
mixer LNA
LNA
LNA
15NXP Semiconductors RF Manual 15th edition
Products
by application
1.2.1 CATV optical (optical node with multiple out-ports)
Application diagram
bra852
coax out
port 1
RF pre-
amplifier
splitter
duplex
filter
RF power
amplifier
RF forward
receiver
fiber in
coax out
port 2
coax out
port 3
coax out
port 4
Recommended products
Function Product Frequency Package Type
RF forward
receiver
Forward
path receiver 870 MHz
SOT115 BGO807
SOT115 BGO807CE
SOT115 BGO827
Function Product Frequency Gain (dB) Type
RF
pre-amplifier
Power doubler 870 MHz 18.2 - 18.8 BGD812
Push-pulls
870 MHz 18 - 19 BGY885A
21 - 22 BGY887
1 GHz 23 - 24.5 CGY1043
27 - 28.5 CGY1047
Function Product Frequency Gain (dB) Type
RF power
amplifier
Power
doublers
870 MHz 22 - 24 CGD942C
24 - 26 CGD944C
1 GHz 22 - 23.5 CGD1042Hi
26.5 - 28 CGD1046Hi
Product highlight:
BGO807CE optical receiver
The BGO807CE is an integrated optical receiver module that
provides high output levels and includes an integrated temperature-
compensated circuitry. In your optical node design, BGO807CE
enables a high performance/ price ratio and ruggedness. When
upgrading an HFC network from analog to digital, our BGO807CE
is the perfect fit.
Features
` Excellent linearity
` Low noise
` Excellent flatness
` Standard CATV outline
` Rugged construction
` Gold metallization ensures excellent reliability
` High optical input power range
1.2 Broadband communication infrastructure
16 NXP Semiconductors RF Manual 15th edition
1.2.2 CATV electrical (line extenders)
Application diagram
duplex
filter
duplex
filter
RF pre-
amplifier
RF power
amplifier
RF reverse
amplifier
coax in coax out
bra505
Recommended products
Function Product Frequency Gain (dB) Type
RF
pre-amplifier Push-pulls
550 MHz
34 - 35 BGY588N
33.5 - 35.5 BGY588C
26.2 - 27.8 BGY587B
600 MHz 21 - 22 BGY687
750 MHz
33.2 - 35.2 BGE788C
18 - 19 BGY785A
21 - 22 BGY787
870 MHz
18 - 19 BGY885A
21 - 22 BGY887
33.5 - 34.5 BGY888
34.5 - 36.5 CGY888C
1003 MHz
18 - 19 BGY1085A
21 - 22.5 CGY1041
23 - 24.5 CGY1043
27 - 28.5 CGY1047
29 - 31 CGY1049
32 - 34 CGY1032
Function Product Frequency Gain (dB) Type
RF reverse
amplifier
Reverse
hybrids
5-75 MHz 29.2 - 30.8 BGY68
5-120 MHz 24.5 - 25.5 BGY66B
5-200 MHz 23.5 - 24.5 BGY67A
All available in SOT115 package.
Function Product Frequency Gain (dB) Type
RF power
amplifier
Power
doublers
550 MHz 18-19 BGD502
750 MHz
19.5 - 20.5 BGD704
18.2 - 18.8 BGD712
18.2 - 18.8 BGD712C
20 - 20.6 BGD714
870 MHz
18 - 19 BGD802
18.2 - 18.8 BGD812
19.7 - 20.3 BGD814
22 - 23 CGD942C
24 - 26 CGD944C
1003 MHz
22 - 24 CGD1042H
24 - 26 CGD1044H
19.5 - 22 CGD1040Hi
22 - 23.5 CGD1042Hi
23.5 - 25.5 CGD1044Hi
26 - 28 CGD1046Hi
22 - 24 CGD982HCi
23.5 - 25.5 CGD985HCi
26 - 28 CGD987HCi
Product highlight:
CGD1046Hi
The CGD1046Hi with a high-output power level is primarily designed
for use in fiber deep-optical-node applications (N+1/2/3).
This 1 GHz hybrid amplifier solution offers an extended temperature
range, high power overstress capabilities in case of surges, and high
ESD levels resulting in a low cost of ownership. It’s designed for
durability and offering superior ruggedness.
Features
`High-output power
`High power gain for power doublers
`Extremely low noise
`Dark Green products
`GaAs HFET dies for high-end applications
`Rugged construction
`Superior levels of ESD protection
`Integrated ringwave protection
`Design optimized for digital channel loading
`Temperature compensated gain response
`Optimized heat management
`Excellent temperature resistance
17NXP Semiconductors RF Manual 15th edition
Products
by application
Product highlight:
Save energy with BF11x8
The BF11x8 series are small signal, RF switching MOSFETs that can
be used for switching RF signals up to 1 GHz. By using the BF11x8
series as an RF switch, you can save a considerable amount of energy.
When a recording device (DVD-R, HDD-R, VCR, DVR) is powered
off, viewers can still watch TV, although the antenna is looped via
the recording device. Without the BF11x8, the antenna signal is lost.
When power to the recording device is on, the BF11x8 is open, so
the RF signal travels via the recording device to the TV tuner. When
power to the recording device is off, the BF11x8 closes. This ensures
that the RF signal is looped through directly to the TV tuner and that
TV reception is guaranteed. Energy is saved because the recording
device can be powered off.
1.3.1 Network interface module (NIM) for TV reception
Application diagram
brb403
RF input
RF SW
VGA
WB LNA
surge
RF output
CONVENTIONAL
TUNER OR
SILICON TUNER
1.3 TV and satellite
Recommended products
Function Product Package Type
RF Switch /
PLT switch MOSFET
5 V silicon RF
switch
SOT23 BF1107
SOT143B BF1108
SOT143R BF1108R
SOT343 BF1108W
SOT343R BF1108WR
3.3 V silicon
RF switch
SOT143B BF1118
SOT143R BF1118R
SOT343 BF1118W
SOT343R BF1118WR
Function Product Package Type
AGC control
amplifier MOSFET
2-in-1 with
band switch
@ 5 V
SOT363 BF1215
2-in-1 @ 5 V SOT363 BF1216
5 V SOT343 BF1217
Note: given that there is now an LNA before the MOSFET, the gain of these
MOSFETs is made slightly lower and the cross-modulation higher. That way, the
MOSFET would not constantly be under AGC even under nominal RF input level.
18 NXP Semiconductors RF Manual 15th edition
Recommended products
Function Product Package Type
VGA MMIC
Wideband
amplifier
with gain
levels of 5
and 10 dB,
plus a bypass
mode.
Vsupply = 5 V
SOT363 BGU7033^
Wideband
amplifier
with gain
level of 10 dB
and a bypass
mode.
Vsupply = 5 V
SOT363 BGU7032^
Wideband
amplifier
with gain
level of 10 dB
and a bypass
mode.
Vsupply = 3.3 V
SOT363 BGU7042^
Wideband
amplifier
with gain
level of
10 dB.
Vsupply = 5 V
SOT363 BGU7031^
Wideband
amplifier
with gain
level of
10 dB.
Vsupply = 3.3 V
SOT363 BGU7041^
LNA RF bipolar
transistor
Wideband
transistor
SOT143 BFG520
BFG540
SOT89 BFQ540
^ = This new series of LNA MMICs is designed specifically for high linearity
(IP3O of 29 dBm), low noise applications like those in an active splitter or
NIM tuner. Housed in a 6-pin SOT363 plastic SMD package, these MMICs
are equipped with internal bias and matched to 75 Ω internally. For the VGAs,
current consumption is < 5 mA during the bypass mode. Only two external
components are needed, thus saving precious circuit board space.
Product highlight:
Make a high performance active splitter in a NIM tuner
with BGU703x/ BGU704x
Today's TV tuners require complicated signal handling and benefit
from flexibility in design. The front-end of a TV signal receiver is no
longer just a tuned receiver, but has evolved into an RF Network
Interface Module (NIM) with tuned demodulators, active splitters,
and remodulators. The active splitter requires an LNA with excellent
linearity. NXP has developed two new series of LNA/VGA MMICs
(BGU703x/BGU704x), designed especially for high linearity (P3O
of 29 dBm) in low noise applications such as an active splitter in a
NIM tuner. The BGU703x family operates at a supply voltage of 5 V
and is intended for use with normal can tuners. The BGU704x family
operates at 3.3 V and works seamlessly with our Si tuner ICs, which
also operate at 3.3 V.
19NXP Semiconductors RF Manual 15th edition
Products
by application
1.3.2 Basic TV tuner
Application diagram
bra500
RF input
MOSFET
VAGC
From antenna,
cable, active splitter,
etc.
MOPLL
IC
IF
Recommended products
Function Product Package Type
Input filter Varicap
diode
VHF low
SOD323 BB152
SOD523 BB182
SOD882D BB182LX
VHF high
SOD323 BB153
SOD523 BB178
SOD523 BB187
SOD882D BB178LX
SOD882D BB187LX
UHF
SOD323 BB149A
SOD882D BB179LX
SOD523 BB179
SOD523 BB189
Function Product Package Type
RF
pre-amplifier MOSFET
5 V
SOT143 BF1201
SOT143 BF1202
SOT143 BF1105
SOT143 BF1211
SOT143 BF1212
2-in-1 @ 5 V
SOT363 BF1102R
SOT363 BF1203
SOT363 BF1204
SOT363 BF1205
SOT363 BF1205C
SOT363 BF1206
SOT363 BF1207
SOT666 BF1208
SOT666 BF1208D
SOT363 BF1210
SOT363 BF1214
SOT363 BF1218
2-in-1 @ 3 V SOT666 BF1206F
V
Function Product Package Type
Bandpass
filter
Varicap
diode
VHF low
SOD323 BB152
SOD882D BB182LX
SOD523 BB182
VHF high
SOD323 BB153
SOD882D BB178LX
SOD523 BB178
SOD882D BB187LX
SOD523 BB187
UHF
SOD323 BB149A
SOD882D BB179LX
SOD523 BB179
SOD523 BB189
Function Product Package Type
Oscillator Varicap
diode
VHF low
SOD323 BB152
SOD882D BB182LX
SOD523 BB182
VHF high
SOD323 BB153
SOD882D BB178LX
SOD523 BB178
SOD882D BB187LX
SOD523 BB187
UHF
SOD323 BB149A
SOD882D BB179LX
SOD523 BB179
SOD523 BB189
Function Product Package Type
RF
pre-amplifier MOSFET
2-in-1 with
band switch
@ 5 V
SOT363 BF1215
2-in-1 @ 5 V SOT363 BF1216
5 V SOT343 BF1217
Product highlight:
BF1206F dual gate MOSFET double amplifier
The device consists of two dual gate MOSFET amplifiers in a small
SOT666 flat lead package. The BF1206F is a true low power device
specified for low voltage and low currents, intended for use in mobile
applications where power consumption is critical. Performance is
suitable for application at supply voltages of 3 V and drain currents
of 4 mA.
Features
`Low-power specified
` Two amplifiers in one small SOT666 package
` Shared gate 2 and source leads
` Each amplifier is biased by an external bias resistor
` Excellent noise and cross-modulation performance
Function Product Package Type
Bandswitching Bandswitch diode
SOD523 BA277
SOD523 BA891
SOD523 BA591
20 NXP Semiconductors RF Manual 15th edition
1.3.3 Satellite outdoor unit, low noise block (LNB) for multiple users
Application diagram
horizontal
antenna
brb022
H low
IF out 1
low
3rd
stage
LNA
(4 x 2)
IF
SWITCH
oscillator
vertical
antenna
2nd
stage
LNA
1st
stage
LNA
3rd
stage
LNA
2nd
stage
LNA
1st
stage
LNA
BIAS IC
IF amplifier
IF
amplifier
IF out 2
IF
amplifier
V low
IF amplifier
H high
high oscillator
IF amplifier
V high
IF amplifier
BIAS IC
mixer
mixer
mixer
mixer
Recommended products
Function Product Package Type
Oscillator
RF bipolar
transistor
Wideband
transistor
SOT343 BFG424W
SOT343F BFG424F
RF transistor SiGe:C
transistor SOT343F
BFU710F
BFU725F/N1
BFU730F
Function Product Package Type
1st stage
IF
amplifier
MMIC
General
purpose
amplifier
SOT363 BGA2711
SOT363 BGA2712
SOT363 BGA2748
SOT363 BGA2714
SOT363 BGA2717
IF gain block
SOT363 BGA2800
SOT363 BGA2801
SOT363 BGA2815
SOT363 BGA2816
SOT363 BGA2850
SOT363 BGA2865
SOT363 BGA2866
RF bipolar
transistor
Wideband
transistor
SOT343 BFG424W
SOT343F BFG424F
Function Product Package Type
IF switch RF diode PIN diode
various BAP64^
various BAP51^
various BAP1321^
various BAP50^
various BAP63^
^ = also available in ultra small leadless package SOD882D.
Function Product Package Type
Output
stage IF
amplifier
MMIC
General
purpose
amplifier
SOT363 BGA2709
SOT363 BGA2776
SOT363 BGM1014
SOT363 BGM1012
SOT363 BGA2716
IF gain block
SOT363 BGA2800
SOT363 BGA2801
SOT363 BGA2815
SOT363 BGA2816
SOT363 BGA2850
SOT363 BGA2865
SOT363 BGA2866
RF bipolar
transistor
Wideband
transistor SOT343 BFG325
2nd stage LNA RF transistor SiGe:C SOT343F BFU710F
BFU730F
Function Product Package Type
3rd stage LNA RF transistor SiGe:C
transistor SOT343F BFU710F
BFU730F
Function Product Package Type
Mixer RF transistor SiGe:C
transistor SOT343F BFU710F
BFU730F
Product highlight:
BGA28xx-family of IF gain blocks
The BGA28xx IF gain blocks are silicon Monolitic Microwave
Integrated Circuit (MMIC) wideband amplifiers with internal
matching circuit in a 6-pin SOT363 plastic SMD package.
Features
`No output inductor necessary when used at the output stage
`Internally matched to 50 Ω
`Reverse isolation > 30 dB up to 2 GHz
`Good linearity with low second order and third order products
`Unconditionally stable (K > 1)
Looking for fully integrated mixer / oscillator / downconverter?
See chapter 2.3.2 Complete satellite portfolio for all LNB architectures
21NXP Semiconductors RF Manual 15th edition
Products
by application
1.3.4 Satellite multi-switch box - 4 x 4 (up to 16 x 16) / DiSEqC / SMATV
Application diagram
brb023
output
amplifiers
input
amplifiers
LNB
input
amplifier
terrestrial
satellite dishe(s)
terrestrial
input
coax out to STB
coax out to STB
coax out to STB
coax out to STB
SWITCH MATRIX
FOR 4 × 4,
NEEDS 16
(SINGLE) PIN
DIODES
Recommended products
Function Product Package Type
Input
amplifier
terrestrial
MMIC
General
purpose
medium
power
amplifier
SOT89
BGA6289
BGA6489
BGA6589
BGA7024
SOT908 BGA7124
Function Product Package Type
Input
amplifier
LNB
MMIC
General
purpose
amplifier
SOT363 BGA2771
SOT363 BGA2776
SOT363 BGA2709
SOT363 BGM1012
RF bipolar
transistor
Wideband
transistor
SOT343 BFG325
SOT343 BFG425W
SOT143 BFG520
SOT143 BFG540
SiGe:C
transistor SOT343F BFU725F/N1
BFU730F
Function Product Package Type
Switch
matrix
RF diode PIN diode Various
BAP50^
BAP51^
BAP63^
BAP64^
BAP70^
BAP1321^
RF transistor SiGe:C
transistor SOT343F BFU725F/N1
BFU730F
^ = also available in ultra small leadless package SOD882D.
Function Product Package Type
Output
amplifier
MMIC
General
purpose
medium
power
amplifier
SOT89
BGA6289
BGA6489
BGA6589
BGA7024
SOT908 BGA7124
General
purpose
amplifier
SOT363 BGM1011
SOT363 BGM1013
SOT363 BGM1014
RF bipolar
transistor
Wideband
transistor
SOT223 BFG135
SOT223 BFG 591
SOT223 BFG198
SOT143 BFG540
SiGe:C
transistor SOT343F BFU725F/N1
BFU730F
Product highlight:
PIN diodes for switching matrix
In addition to delivering outstanding RF performance, this component
simplifies design-in because of its extremely low forward resistance,
diode capacitance, and series inductance. Significant board space
is saved by supplying a range of highly compact package options –
including SOD523, SOD323 and leadless SOD882D.
Features
`High isolation, low distortion, low insertion loss
`Low forward resistance (Rd) and diode capacitance (Cd)
`Ultra-small package options
22 NXP Semiconductors RF Manual 15th edition
1.3.5 VSAT
Application diagram
brb405
INDOOR UNIT OUTDOOR UNIT
REF REF ANTENNA
to/from
IDU
LNA
IF
IF2
IF1
BUF
BUF
PMU PMU
MPX MPX OMT
MOD
DEMOD
DATA
INTERFACE
POWER
SUPPLY
DIGITAL
SIGNAL
PROCESSOR
LNA2
PA
LNA1
IF1
SYNTH PLL
PLL´ N
Recommended products
Indoor unit
Function Product Package Type
IF
IF gain block MMIC
SOT363
BGA2800
BGA2801
BGA2815
BGA2816
MMIC
General purpose
wideband
amplifiers
BGM1012
BGA2714
BGA2748
BGA2771
Function Product Package Type
LNA RF transistor
SiGe:C transistor SOT343F
BFU725F/N1
BFU710F
BFU725F/N1
BFU730F
Wideband
transistor
SOT343R BFG425W
BFG424W
SOT143R BFG325/XR
23NXP Semiconductors RF Manual 15th edition
Products
by application
Recommended products
Outdoor unit
Function Product Package Type
IF
IF gain block MMIC
SOT363
BGA2800
BGA2801
BGA2815
BGA2816
BGA2850
BGA2865
BGA2866
MMIC
General purpose
wideband
amplifiers
BGM1014
BGM1013
BGM1012
BGA2714
Function Product Package Type
LNA2 RF transistor SiGe:C transistor SOT343F
BFU610F
BFU630F
BFU660F
BFU690F
BFU710F
BFU725F/N1
BFU730F
BFU760F
BFU790F
MMIC SiGe:C MMIC SOT891 BGU7003
Function Product Package Type
PLL RF IC SiGe:C IC SOT616
TFF1003HN
TFF1007HN
TFF11xxxHN^
Function Product Package Type
Oscillator RF transistor
Wideband
transistor SOT343R BFG424W
BFG425W
SiGe:C transistor SOT343F
BFU610F
BFU630F
BFU660F
BFU690F
BFU710F
BFU725F/N1
BFU730F
BFU760F
BFU790F
Function Product Package Type
Synth RF diode Varicap diode SOD523 BB202
Function Product Package Type
Buffer RF transistor SiGe:C transistor SOT343F
BFU610F
BFU630F
BFU660F
BFU690F
BFU710F
BFU725F/N1
BFU730F
BFU760F
BFU790F
^ = 17 different types with LO ranges: 7-15 GHz, see 3.4.4
Product highlight:
TFF1003HN
The TFF1003HN is a Ku-band frequency generator intended for
low phase noise Local Oscillator (LO) circuits for Ku-band VSAT
transmitters and transceivers. The specified phase noise complies
with IESS-308 from Intelsat.
Features
`Phase noise compliant with IESS-308 (Intelsat)
`LO generator with VCO range from 12.8 GHz to 13.05 GHz
`Input signal 50 MHz to 815 MHz
`Divider settings 16, 32, 64, 128 or 256
24 NXP Semiconductors RF Manual 15th edition
1.4.1 GPS
Application diagram
1.4 Portable devices
Recommended products
Function Product Package Type
SPDT Switch RF diode PIN diode various
BAP64^
BAP1321^
BAP51^
Function Product Package Type
LNA
RF transistor SiGe:C
transistor SOT343F
BFU725F /N1
BFU710F
BFU730F
MMIC SiGe:C
MMIC
SOT891 BGU7003
SOT886
BGU7003W
BGU7004
BGU7005
BGU7007
BGU7008
^ = also available in ultra-small leadless package SOD882D.
Product highlight:
BGU7007 SiGe:C LNA MMIC for GPS, GLONASS,
and Galileo
The BGU7007 is a low noise amplifier (LNA) for GNSS receiver
applications in a plastic, leadless, 6-pin, extremely-small SOT886
package. It requires only one external matching inductor and one
external decoupling capacitor.
Features
`Covers full GNSS L1 band, from 1559 to 1610 MHz
`Noise figure (NF) = 0.85 dB
`Gain = 18.5 dB
`High 1 dB compression point of -12 dBm
`High out-of-band IP3i of 4 dBm
`Supply voltage 1.5 to 2.85 V
`Power-down mode current consumption < 1 µA
`Optimized performance at low supply current of 4.8 mA
`Integrated temperature stabilized bias for easy design
` Requires only one input matching inductor and one supply
decoupling capacitor
001aan955
external
active
antenna
BPF LNA
SPDT
embedded
antenna
BPF LNA BPF GPS
RECEIVER
IC
25NXP Semiconductors RF Manual 15th edition
Products
by application
1.4.2 FM radio
Application diagram
Recommended products
Function Product Package Type
SPDT switch RF diode PIN diode various
BAP64^
BAP 65^
BAP1321^
BAP51^
Function Product Package Type
LNA
RF transistor SiGe:C
transistor SOT343F BFU725F /N1
MMIC SiGe:C
MMIC
SOT891 BGU7003
SOT886 BGU7003W
^ = also available in ultra-small leadless package SOD882D.
Product highlight:
BGU7003W MMIC wide band amplifier
The BGU7003W is a wideband amplifier in SiGe:C technology for
high-speed, low noise applications. It is housed in a plastic, leadless,
6-pin, extremely-thin, small-outline SOT886 package.
Features
`Applicable between 40 MHz and 6 GHz
`High ohmic FM LNA: 13 dB gain and 1.1 dB NF at 100 MHz
`50 Ω FM LNA: 15 dB gain and 1.4 dB NF at 100 MHz
`Integrated temperature-stabilized bias for easy design
`Bias current configurable with external resistor
`Power-down mode current consumption < 1 μA
`ESD protection > 1 kV Human Body Model (HBM) on all pins
001aan956
headset
antenna
LNA
SPDT
embedded
antenna
LNA
FM
RECEIVER
IC
26 NXP Semiconductors RF Manual 15th edition
1.4.3 Cellular receive
Application diagram
Recommended products
Function Product Package Type
LNA MMIC SiGe:C MMIC SOT891 BGU7003
SOT886 BGU7003W
Product highlight:
BGU7003 MMIC wideband amplifier
The BGU7003 MMIC is a wideband amplifier in SiGe:C technology for
high-speed, low noise applications. It is housed in a plastic leadless
6-pin extremely thin small outline SOT886 package.
Features
`Applicable between 40 MHz and 6 GHz
`LTE LNA: 1 dB NF, 18.5 dB gain and -5 dBm IIP3 at 750 MHz
`Integrated temperature stabilized bias for easy design
`Bias current configurable with external resistor
`Power-down mode current consumption < 1 μA
`ESD protection > 1 kV Human Body Model (HBM) on all pins
001aan957
BPF
PA
UMTS
LTE
GSM/
EDGE
TRANSCEIVER
GSM/EDGE FE
SWITCH
duplexer
27NXP Semiconductors RF Manual 15th edition
Products
by application
1.4.4 802.11n WLAN (dual concurrent)
Application diagram
bra502
antenna
low pass
filter
bandpass
filter
medium
power
amplifier
Tx
Rx
APPLICATION
CHIPSET
PActrl
SPDT
SPDT
switch
LNA
Recommended products
Function Product Package Type
Medium
power
amplifier
MMIC Medium power
amplifier
SOT89 BGA7024
BGA7027
SOT908 BGA7124
BGA7127
Function Product Package Type
LNA RF Transistor SiGe:C
transistor SOT343F BFU725F/N1
BFU730F
MMIC SiGe:C MMIC SOT891 BGU7003
Product highlight:
BGA7127 MMIC medium power amplifier
The BGA7127 MMIC is a one-stage driver amplifier, offered in a
low-cost ultra small SOT908 leadless package. It delivers 28 dBm
output power at 1 dB gain compression and superior performance
for various narrowband-tuned application circuits at frequencies up
to 2700 MHz.
Features
`400 to 2700 MHz operating range
`13 dB small signal gain at 2 GHz
`28 dBm output power at 1 dB gain compression
`Integrated active biasing
`3.3 / 5 V single supply operation
`Simple quiescent current adjustment
`1 μA shutdown mode
28 NXP Semiconductors RF Manual 15th edition
1.4.5 Generic RF front-end
Application diagram
bra850
LOW
FREQUENCY
CHIP SET
SPDT
switch VCO
mixerfilterLNAfilterantenna
buffer
VCOdriverPAfilter
Recommended products
Function Product Package Type
SPDT Switch RF diode
Bandswitch
diode
SOD523 BA277
SOD323 BA591
PIN diode various BAP51^
various BAP1321^
Function Product Package Type
LNA
RF bipolar
transistor
Wideband
transistor
SOT23 PBR951
SOT323 PRF957
SOT323 PRF947
SiGe:C
transistor SOT343F
BFU610F
BFU630F
BFU660F
BFU690F
BFU710F
BFU725F/N1
BFU730F
BFU760F
BFU790F
MMIC Low noise
wideband ampl.
SOT343R BGA2001
SOT343R BGA2003
Function Product Package Type
Driver
RF bipolar
transistor
Wideband
transistor
SOT323 PRF957
SOT23 PBR951
MMIC
Amplifier SOT363 BGA2031/1
Gen. purpose
wideband ampl.
SOT363 BGA2771
SOT363 BGA2776
^ = also available in ultra small leadless package SOD882D
Function Product Package Type
Mixer
RF bipolar
transistor
Wideband
transistor
SOT343 BFG410W
SOT343 BFG425W
SOT343 BFG480W
MMIC Linear mixer SOT363 BGA2022
Function Product Package Type
Buffer RF bipolar
transistor
Wideband
transistor
SOT23 PBR951
SOT323 PRF957
SOT323 PRF947
SOT416 PRF949
Function Product Package Type
Power
amplifier MMIC
Gen. purpose
wideband
ampl.
SOT89
BGA6289
BGA6489
BGA6589
BGA7024
BGA7027
Function Product Package Type
VCO Varicap
diodes
VCO varicap
diodes
SOD523 BB198
SOD323 BB156
Product highlight:
BFU790F silicon NPN germanium microwave transistor
Silicon NPN germanium microwave transistor for high-speed, low
noise applications in a plastic, 4-pin dual-emitter SOT343F package.
Features
`Low noise, high linearity microwave transistor
`110 GHz fT silicon germanium technology
` High maximum output power at 1 dB compression of 20 dBm
at 1.8 GHz
29NXP Semiconductors RF Manual 15th edition
Products
by application
1.5 Automotive
1.5.1 Active antenna, e.g. SDARS, GPS
Application diagram
Recommended products
Function Product Package Type
1st stage
LNA MMIC Low noise wideband
amplifier
SOT343R BGA2001
BGA2003
SOT343F BFU730F
Function Product Package Type
2nd stage
LNA MMIC General purpose
wideband amplifier
SOT343F BFU690F
SOT363
BGM1013
BGM1011
BGA2715
BGA2748
Function Product Package Type
3rd stage
LNA
RF transistor SiGe:C transistor SOT343F
BFU690F
BFU725F/N1
BFU790F
MMIC SiGe:C MMIC SOT891 BGU7003
Product highlight:
BGU7003 MMIC wideband amplifier
Manufactured in NXP’s latest SiGe:C process, this high frequency
RF MMIC delivers high-quality reception with extended battery life.
It is a cost-effective, silicon-based alternative to GaAs devices, and
offers higher integration and easier design-in than discrete bipolar
transistors.
Features
`Low noise, high-gain microwave MMIC
`Maximum stable gain = 19 dB at 1.575 GHz
`110 GHz fT-silicon germanium technology
`Optimized performance at low (5 mA) supply current
`Extremely thin, leadless 6-pin SOT891 package
`Integrated biasing and shutdown for easy integration
001aan958
1st
stage
LNA
antenna
2nd
stage
LNA
3rd
stage
LNAfilter
CHIPSET
30 NXP Semiconductors RF Manual 15th edition
1.5.2 Remote keyless entry, RF generic front-end with dedicated antenna for reception and transmission
bra851
LOW
FREQUENCY
CHIP SET
VCO
mixer
receiver
transmitter
filterLNAfilter
antenna
antenna
buffer
LOW
FREQUENCY
CHIP SET
VCOdriverPAfilter
Recommended products
Function Product Package Type
LNA
RF bipolar
transistor
Wideband
transistor
SOT23 PBR951
SOT323 PRF957
SOT323 PRF947
MMIC
Low noise
wideband ampl. SOT343R
BGA2001
BGA2002^
BGA2003
SiGe:C MMIC SOT891 BGU7003
Function Product Package Type
Driver
RF bipolar
transistor
Wideband
transistor
SOT323 PRF957
SOT23 PBR951
MMIC
Amplifier SOT363 BGA2031/1
Gen. purpose
wideband ampl.
SOT363 BGA2771
SOT363 BGA2776
Function Product Package Type
VCO Varicap
diodes
VCO varicap
diodes
SOD323 BB148
SOD323 BB149A
SOD523 BB198
SOD323 BB156
^ = AEC-Q101 qualified (some limitations apply)
Function Product Package Type
Mixer
RF bipolar
transistor
Wideband
transistor
SOT343 BFG410W
SOT343 BFG425W
SOT343 BFG480W
MMIC Linear mixer SOT363 BGA2022
Function Product Package Type
Buffer RF bipolar
transistor
Wideband
transistor
SOT23 PBR951
SOT323 PRF957
SOT323 PRF947
SOT416 PRF949
Function Product Package Type
Power
amplifier
RF bipolar
transistor
Wideband
transistor
SOT323 PRF957
SOT23 PBR951
MMIC
Amplifier SOT363 BGA2031/1
Gen. purpose
wideband
ampl.
SOT363 BGA2771
SOT363 BGA2776
SOT908 BGA7124
Product highlight:
Varicap diodes as VCO
Varicap diodes are principally used as voltage varicap capacitors,
with their diode function a secondary option. These devices are ideal
for voltage controlled oscillators (VCOs) in ISM band applications.
Features
` Excellent linearity
` Excellent matching
` Very low series resistance
` High capacitance ratio
Application diagram
31NXP Semiconductors RF Manual 15th edition
Products
by application
1.5.3 Tire pressure monitoring system
Application diagram
Recommended products
Function Product Package Type
PA RF bipolar
transistor
Wideband
transistor
SOT23 BFR92A
SOT323 BFR92AW
SOT23 BFR94A^
SOT323 BFR93AW
SOT323 BFR94AW^
Function Product Package Type
Driver
RF bipolar
transistor
Wideband
transistor
SOT323 PRF957
SOT23 PBR951
MMIC
Amplifier SOT363 BGA2031/1
Gen. purpose
wideband ampl.
SOT363 BGA2771
SOT363 BGA2776
Function Product Package Type
VCO Varicap diodes VCO varicap diodes SOD523 BB198
SOD323 BB156
^ = AEC-Q101 qualified (some limitations apply)
Product highlight:
BFR94AW silicon NPN transistor
Designed for use in RF amplifiers, mixers and oscillators with signal
frequencies up to 1 GHz, this silicon NPN transistor is housed in
a plastic SOT323 (S-mini) package.
Features
`High power gain
`Gold metallization ensures excellent reliability
`SOT323 (S-mini) package
`AEC-Q101 qualified
driver VCO
PA
filter
antenna
SENSOR
brb216
32 NXP Semiconductors RF Manual 15th edition
1.5.4 Car radio receiver (CREST ICs: TEF6860HL, TEF6862HL)
Application diagram
bra501
AGC &
hum filter
FM input
filter
& AGC
AM LNA
IF limiter
amplifier
FM de-
modulator
1st
mixer
oscillator
IF
bandpass
filter
2nd
mixer
1st
mixer
2nd
mixer
oscillator
FM MPX
AM audioDET
f V
variable
BW filter
RF input
filter
IF
amplifier
AM de-
modulator
IF
bandpass
filter
IF
bandpass
filter
Recommended products
Function Product Package Type
AM LNA RF transistor JFET SOT23 BF862
Function Product Package Type
FM input
filter & AGC RF diode
Varicap
diode
SOT23 BB201^
SOT23 BB207
PIN diode SOD523 BAP70-02
SOD323 BAP70-03
^ = OIRT
Function Product Package Type
AGC &
hum filter RF diode PIN diode SOT363 BAP70AM
Function Product Package Type
Oscillator RF diode Varicap
diode
SOD323 BB156
SOD523 BB208-02
Note 1:
These recommended discrete products are applicable for
NICEPACS, CCC and DDICE: NICE:TEA6840H,TEA6845H,TEA684
6H, NICEPACS:TEA6848H,TEA6849H; CCC:TEF6901H,TEF6903H;
DDICE:TEA6721HL. All recommended discrete products are
applicable, excluding AM LNA in: DICE2:TEF6730HWCE.
Note 2:
Phone and portable radio (IC:TEA5767/68) use varicap BB202 as FM
oscillator.
Product highlight:
BF862 junction field effect transistor
Our tuning portfolio contains excellent products for car radio
reception applications and in-vehicle media platforms. The NXP
devices for this application ensure excellent reception quality and
ease of design-in. Performance is demonstrated in reference designs.
The high performance junction FET BG862 is specially designed for
AM radio amplifiers.
Features
` High transition frequency and optimized input capacitance for
excellent sensitivity
`High transfer admittance resulting in high gain
` Encapsulated in the versatile and easy to use SOT23 package
33NXP Semiconductors RF Manual 15th edition
Products
by application
1.6 Industrial, scientific & medical (ISM)
1.6.1 Broadcast / ISM (10 - 1500 MHz range)
Application diagram
typ. 0.5 kW
DVB-T
typ. 5 kW DVB-T
output power
TV exciter
DVB-T
Driver stages
amplifiers
harmonic
filter power
monitor
8× final
Product highlight:
BLF888A LDMOS power transistor
NXP’s 50 V high voltage LDMOS process enables highest power
and unequalled ruggedness. The BLF888A (VSWR > 50:1) delivers the
highest power level for digital broadcasting available to date.
Features
`Best broadband efficiency
` Highest power devices
` Unrivalled ruggedness
` Low-thermal resistance design for reliable operation
` Consistent device performance
Recommended broadcast products
Function fmin
(MHz)
fmax
(MHz)
P1dB
(W)
ηD
(%)
VDS
(V) Package Type
Driver
470 860 7 33 50 SOT467C BLF642
470 860 24 33 42 SOT467 BLF871(S)
470 860 30 31 50 SOT467 BLF881(S)
Final
470 860 70 32 50 SOT539A BLF884P
470 860 75 32 42 SOT979A BLF878
470 860 90 31 42 SOT1121 BLF879P
470 860 110 30 50 SOT539A BLF888
470 860 120 31 50 SOT539A BLF888A
Recommended ISM products
Function fmin
(MHz)
fmax
(MHz)
P1dB
(W)
VDS
(V) Package Type
Driver
0 1000 5 50 SOT1179 BLP10H605
0 1000 10 50 SOT1179 BLP10H610
0 1500 5 32 SOT1179 BLP15M705
0 1500 10 32 SOT1179 BLP15M710
10 500 20 50 SOT467C BLF571
1 1400 35 32 SOT467C BLF642
1 1000 100 42 SOT467 BLF871
1 1000 120 50 SOT467 BLF881
Final
1 1400 100 32 SOT540A BLF645
1 800 300 32 SOT540A BLF647
1 1500 150 32 SOT1120 BLF647P
10 500 300 50 SOT502 BLF573(S)
470 860 300 50 SOT539A BLF884P
10 500 500 50 SOT1121A/B BLF573P
1400 1500 500 50 SOT539 BLF6G15L(S)-500H
10 500 600 50 SOT539A BLF574
470 860 600 50 SOT539 BLF888A(S)
470 860 450 42 SOT539A3 BLF879P
88 108 1000 50 SOT539 BLF178P
10 500 500 50 SOT1240 BLF278XR
10 500 1200 50 SOT539A BLF578
10 500 1200 50 SOT539A BLF578XR
34 NXP Semiconductors RF Manual 15th edition
1.6.2 E-metering, RF generic front-end with a single antenna / ZigBee
Application diagram
bra850
E-METERING
CHIP SET
SPDT
switch VCO
mixerfilterLNAfilterantenna
buffer
VCOdriverMPAfilter
Recommended products
Function Product Package Type
SPDT Switch RF diode
Bandswitch
diode
SOD523 BA277
SOD323 BA591
PIN diode various BAP51^
various BAP1321^
Function Product Package Type
LNA
RF transistor
SiGe:C transistor
SOT343F
BFU610F
BFU630F
BFU660F
BFU690F
BFU710F
BFU725F/N1
BFU730F
BFU760F
BFU790F
MMIC
Low noise
wideband ampl.
SOT343R BGA2001
SOT343R BGA2003
SiGe:C MMIC SOT891 BGU7003
Function Product Package Type
Driver
RF bipolar
transistor
Wideband
transistor SOT343 BFG425W
MMIC
Amplifier SOT363 BGA2031/1
Gen. purpose
wideband ampl.
SOT363 BGA2771
SOT363 BGA2776
^ = also available in ultra small leadless package SOD882D.
Function Product Package Type
Mixer
RF bipolar
transistor
Wideband
transistor
SOT343 BFG410W
SOT343 BFG425W
SOT343 BFG480W
MMIC Linear mixer SOT363 BGA2022
Function Product Package Type
Buffer RF bipolar
transistor
Wideband
transistor
SOT23 PBR951
SOT323 PRF957
SOT323 PRF947
SOT416 PRF949
Function Product Package Type
Medium power
amplifier
RF bipolar
transistor
Wideband
transistor SOT343 BFG21W
MMIC
Gen. purpose
wideband
ampl.
SOT89
BGA6289
BGA6489
BGA6589
SOT908 BGA7124
SOT908 BGA7127
Function Product Package Type
VCO Varicap
diodes
VCO varicap
diodes
SOD523 BB198
SOD323 BB156
Product highlight:
BGA7127 MMIC medium power amplifier
The BGA7127 MMIC is a one-stage driver amplifier, offered in a
low-cost, ultra small SOT908 leadless package. It delivers 27 dBm
output power at 1 dB gain compression and superior performance for
various narrowband-tuned application circuits at frequencies up to
2700 MHz.
Features
`Operating range: 400 to 2700 MHz
`16 dB small signal gain at 2 GHz
`27 dBm output power at 1 dB gain compression
`Integrated active biasing
`3.3 / 5 V single supply operation
`Simple quiescent current adjustment
`1 μA shutdown mode
35NXP Semiconductors RF Manual 15th edition
Products
by application
1.6.3 RF Microwave furnace application
Application diagram
brb418
antenna
MPAoscillator HPA
isolator
CONTROLLER
Recommended products
Function Product Package Type
Oscillator RF transistor
SOT343R
BFG410W
BFG424W
BFG425W
SOT343F
BFG424F
BFU610F
BFU630F
BFU660F
BFU690F
BFU710F
BFU725F/N1
BFU730F
BFU760F
BFU790F
Function Product fmin
(MHz)
fmax
(MHz)
P1dB
(W) Package Type
HPA
Driver
1 2500 4 SOT1179 BLP25M74
1 2500 10 SOT1179 BLP25M710
1 2500 12 SOT975B BLF25M612
2400 2500 20 SOT1138 BLM2425M720
Final
2400 2500 140 SOT1179 BLP2425M8140
2400 2500 180 SOT539 BLF2425M6L(S)180P
2400 2500 200 SOT502 BLF2425M7L(S)200
2400 2500 250 SOT539 BLF2425M7L(S)250P
2400 2500 250 SOT1179 BLP2425M8250P
Product highlight:
New family for ISM 2.45 GHz
NXP's 6th and 7th generation LDMOS technology, along with advanced
packaging concepts, enables power amplifiers that deliver best-in-class
performance at 2.45 GHz. The unsurpassed ruggedness and low thermal
resistance, along with the intrinsic efficiency of the LDMOS process,
make these transistors ideally suited for the furnace application.
Features
`Excellent ruggedness
`Consistent device performance
`Low thermal resistance design for unrivalled reliability
`Ease of design
Function Product Package Type
MPA
(medium
power
amplifier)
MMIC
SOT89
BGA6289
BGA6489
BGA6589
SOT908 BGA7124
SOT89 BGA7024
SOT908 BGA7127
SOT89 BGA7027
SOT908 BGA7130*
* = check status at 3.1 new products, as this type has not been released for mass production.
36 NXP Semiconductors RF Manual 15th edition
1.6.4 RF plasma lighting
Application diagram
brb436
oscillator MPA HPA
RF (plasma) bulb
CONTROLLER
Recommended products
Function Product Package Type
Oscillator RF transistor
SOT143 BFG520
SOT143 BFG325/XR
SOT23 BFR520
SOT323 BFR92AW
SOT323 BFR93AW
SOT323 BFS520
SOT343 BFG520W
SOT343 BFG325W/XR
SOT363 BFM520
SOT416 BFR520T
Function Product Package Type
MPA
(medium
power
amplifier)
MMIC
SOT89
BGA6289
BGA6489
BGA6589
SOT908 BGA7124
SOT89 BGA7024
SOT908 BGA7127
SOT89 BGA7027
SOT908 BGA7130*
* = check status at 3.1 new products, as this type has not been released for mass production.
Product highlight:
LDMOS enables RF lighting
NXP's 50 V high voltage LDMOS process enables highest power
at the unprecedented ruggedness levels necessary for this kind of
application.
BLF578: 1000 W CW operation - highest power LDMOS
Features
`Highest power device
`Unprecedented ruggedness
`Low-thermal resistance design for reliable operation
`Consistent device performance
`Broadband device for flexible use
Function Product fmin
(MHz)
fmax
(MHz)
P1dB
(W) Package Type
HPA
Driver 10 500 20 SOT467C BLF571
Final
10 500 300 SOT502A BLF573(S)
10 500 500 SOT539A BLF574
10 500 500 SOT1240 BLF278XR
10 500 1000 SOT539A BLF578
10 500 1000 SOT539A BLF578XR
Driver 10 1000 10 SOT1179 BLP10H610
Final
10 1000 100 SOT467C BLF871(S)
10 1000 120 SOT1138 BLP10H6120
10 1000 300 SOT1138 BLP10H6300P
Driver 10 2500 4 SOT1179 BLP25M74
10 2500 12 SOT975B BLF25M612
Final
2400 2500 140 SOT1179 BLP2425M8140
2400 2500 180 SOT502 BLF2425M7L(S)180
2400 2500 200 SOT502 BLF2425M7L(S)200
2400 2500 250 SOT539 BLF2425M7L(S)250P
2400 2500 250 SOT1179 BLP2425M8250P
Looking for more information on RF plasma lighting?
See chapter 2.5.2 RF-driven plasma lighting: The next revolution in light
sources are powered by solid-state RF technology
37NXP Semiconductors RF Manual 15th edition
Products
by application
1.6.5 Medical imaging
Application diagram
Product highlight:
LDMOS in emerging medical applications
NXP’s line of 50 V high voltage LDMOS devices enables highest
power output and features unequalled ruggedness for pulsed
operation in MRI and NMR applications. The high power densities
enable compact amplifier design.
Features
`Best broadband efficiency
`Highest power (density) devices
`Unrivalled ruggedness
`Consistent device performance
brb434
RF coils
Gradient coils
Magnet
RF amplifier
X GRADIENT
AMPLIFIER
Y GRADIENT
AMPLIFIER WAVEFORM
GENERATOR
Z GRADIENT
AMPLIFIER
RF
ELECTRONICS COMPUTER
ADC
IMAGE
DISPLAY
Recommended products
Function Product fmin
(MHz)
fmax
(MHz)
P1dB
(W) Package Type
HPA
Driver 10 500 20 SOT467C BLF571
Final
10 500 300 SOT502A BLF573(S)
10 500 500 SOT539A BLF574
10 500 500 SOT1240 BLF278XR
10 500 1000 SOT539A BLF578
10 500 1000 SOT539A BLF578XR
Driver 10 1000 10 SOT1179 BLP10H610
Final
10 1000 100 SOT467C BLF871(S)
10 1000 120 SOT1138 BLP10H6120
10 1000 300 SOT1138 BLP10H6300P
Driver 10 2500 4 SOT1179 BLP25M74
10 2500 12 SOT975B BLF25M612
Final
2400 2500 140 SOT1179 BLP2425M8140
2400 2500 180 SOT502 BLF2425M7L(S)180
2400 2500 200 SOT502 BLF2425M7L(S)200
2400 2500 250 SOT539 BLF2425M7L(S)250P
2400 2500 250 SOT1179 BLP2425M8250P
Looking for more information on medical applications?
See chapter 2.5.1 Medical applications driven by RF power: From imaging
to cancer treatment, a flexible and versatile technology in the doctor’s toolbox
38 NXP Semiconductors RF Manual 15th edition
brb410
RF signals
RF small signal
RF power
control and timing
local oscillator signal
local oscillator
video
RF POWER BOARD
MPA
VGA
LNA
IF amplifier
HPA ISOLATOR
WAVEFORM
GENERATOR
DISPLAY
AND
CONTROL
ANTENNA
DRIVE
DETECTOR
PLL VCO
duplexer
mixer
mixer
PLL VCO
video, timing, bias voltage,
control and data
I-f signals
Recommended products
Function Product fmin
(MHz)
fmax
(MHz)
P1dB
(W) Package Applications Type
HPA
Driver 1030 1090 2 SOT538A Avionics BLA1011-2
1030 1090 10 SOT467C Avionics BLA1011-10
Final
1030 1090 200 SOT502A Avionics BLA6G1011-200R
1030 1090 200 SOT502A Avionics BLA6G1011LS-200RG
960 1215 250 SOT502A Avionics BLA0912-250R
1030 1090 300 SOT957A Avionics BLA1011-300
960 1215 500 SOT634A Avionics BLA6H0912-500
1030 1090 600 SOT539A Avionics BLA6H1011-600
960 1215 1000 SOT539A3 Avionics BLA6H0912-1000
Driver 500 1400 25 SOT467C L-band BLL6H0514-25
1200 1400 35 SOT467C L-band BLL1214-35
Final
500 1400 130 SOT1135 L-band BLL6H0514L(S)-130
1200 1400 250 SOT502A L-band BLL6G1214L-250
1200 1400 250 SOT502 L-band BLL6H1214L(S)-250
1200 1400 500 SOT539A L-band BLL6H1214-500
Driver
2700 3100 6 SOT975C S-band BLS6G2731-6G
3100 3500 20 SOT608 S-band BLS6G3135(S)-20
2700 3500 30 SOT1135 S-band BLS6G2735L(S)-30
Final
2900 3300 100 SOT502A S-band BLS2933-100
2700 3100 120 SOT502 S-band BLS6G2731(S)-120
3100 3500 120 SOT502 S-band BLS6G3135(S)-120
2700 3100 130 SOT922-1 S-band BLS6G2731S-130
2900 3300 130 SOT922-1 S-band BLS6G2933S-130
2900 3300 150 SOT922-1 S-band BLS7G2933S-150
2700 2900 350 SOT539 S-band BLS7G2729L(S)-350P
3100 3500 350 SOT539 S-band BLS7G3135L(S)-350P
2900 3300 200 pallet S-band BLS6G2933P-200
2700 3100 200 pallet S-band BLS6G2731P-200
1.7 Aerospace and defense
1.7.1 Microwave products for avionics, L- and S-band radar applications
Application diagram
39NXP Semiconductors RF Manual 15th edition
Products
by application
Function Product Package Type
Discrete attenuator RF diode PIN diode Various^ BAP64
^ = SOD523, SOD323, SOT23 & SOT323
Function Product Package Type
LNA (low noise
amplifier) & Mixer RF transistor SiGe:C transistor SOT343F
BFU710F
BFU725F/N1
BFU730F
Function Product Package Type
IF amplifier MMIC
MMIC
SOT363
BGA2800
BGA2801
BGA2815
BGA2816
BGA2850
BGA2865
BGA2866
General purpose
wideband
amplifiers
BGM1014
BGM1013
BGM1012
Function Product Package Type
PLL/VCO
LO generator RF IC SiGe:C IC SOT616
TFF1003HN
TFF1007HN
TFF11xxxHN^
Function Product Gain range Package Type
Single VGA (variable
gain amplifier)
MMIC 23 dB SOT617 BGA7202
31 dB BGA7204
Function Product Gain range Package Type
Dual VGA (variable
gain amplifier) MMIC 24 dB SOT617 BGA7350
28 dB BGA7351
Function Product PL (1 dB) @ 940 MHz Package Type
MPA
(medium power
amplifier)
MMIC
21 dBm SOT89 BGA6589
25 dBm SOT908 BGA7124
24 dBm SOT89 BGA7024
28 dBm SOT908 BGA7127
28 dBm SOT89 BGA7027
30 dBm SOT908 BGA7130*
^ = 17 different types with LO ranges: 7-15 GHz, see 3.4.4
Product highlight:
NXP launches high quality pallets for S-band
The BLS6G2933P-200 is the first LDMOS-based, industry-standard
pallet available on the market. This pallet offers more than 40%
efficiency, includes the complete bias network and can be used
as direct replacement for current solutions.
Features
`P1 dB > 200 W
`Efficiency > 40%
`Industry-standard footprint
`50 Ω in/out matched for entire bandwidth
`Lightweight heat sink included
40 NXP Semiconductors RF Manual 15th edition
2. Focus applications, products & technologies
Key features
`BGA720x: transmit VGAs
- Frequency band: 700 to 2200 or 2750 MHz
- Gain range: 23 or 31.5 dB
- OIP3: +36 dBm/110 mA (BGA7202), +41 dBm/520 mA
(BGA7204) @ minimum attenuation
`BGA735x: dual receive IF VGAs
- Frequency band: 50 to 250 MHz
- Gain range: 24 or 28 dB
- OIP3: +44 dBm/245 mA or higher @ minimum attenuation
- Gain flatness: 0.1 dB
- Differential phase error: 0.1 degrees
`Best-in-class linearity (OIP3) at low power consumption
`ESD protection > 2 kV HBM and > 1.5 kV CDM on all pins
`HVQFN32 leadless packages (5 x 5 mm)
Key applications
`Wireless infrastructure base stations
`Multi-carrier systems
These high performance variable gain amplifiers (VGAs)
support multiple frequency bands and the latest air interfaces.
They offer best-in-class linearity, very low power consumption,
high immunity to out-of-band signals, spurious performance,
and output power. They are ideally suited for GSM, W-CDMA,
WiMAX, LTE base-station infrastructure, and multi-carrier
systems.
The BGA7202 and BGA7204 are RF VGAs used in the transmit
path. The BGA7202 offers an output third-order intercept
(OIP3) of +45 dBm and 27 dB of attenuation. The attenuation is
controlled by means of an analog interface.
The BGA7204 provides an OIP3 of +37 dBm and 32 dB of
attenuation. The attenuation is controlled by means of a digital
interface. In addition, the gain curve of the BGA7204 can be
programmed via an SPI interface.
The BGA7350 and BGA7351 are dual, independently
controlled receive IF VGAs that operate from 50 to 250 MHz.
Integrated matching improves performance in the receiver
chain, because the VGA can drive the filter directly into the
analog-to-digital converter to ensure a constant input level.
The BGA7350 has a gain range of 24 dB, while the BGA7351
has a range of 28 dB. For both devices, the maximum
gain setting delivers 18 dBm output power at 1 dB gain
compression (P1dB), with superior linear performance and
overdrive performance up to +20 dBm. For gain control, each
amplifier uses a separate digital gain-control code, which is
provided externally through two sets of five bits. The resulting
gain flatness is 0.1 dB.
Other features
All four devices are RoHS-compatible and available in
space-saving HVQFN32 leadless packages that measure just
5 x 5 mm. They are unconditionally stable devices that offer
ESD protection at all pins and meet moisture sensitivity level 1.
2.1 Wireless communication infrastructure
2.1.1 VGAs with superior linearity for enhanced system performance
NXP variable gain amplifiers BGA7202/4, BGA7350/1
Manufactured in NXP’s innovative QUBiC4 process, these VGAs deliver more on-chip functionality
in less space, and meet the most demanding requirements for system performance.
41NXP Semiconductors RF Manual 15th edition
Focus applications,
products & technologies
Gain
range
@ minimum attenuation @ maximum attenuation
Vsup Isup Frequency Gain OIP3 NF Gain OIP3 NF
Type Package Control interface (V) (mA) (MHz) (dB) (dB) (dBm) (dB) (dB) (dBm) (dB)
BGA7202 SOT617 Analog 5 530
700 to 1450 23 23 41 7 0 30 30
1450 to 2200 23 23 41 7 0 30 30
BGA7204 SOT617 Parallel, serial, digital 5 110
700 to 1450 31.5 18 38 6.5 -13.5 10 38
1450 to 2100 30.5 17 36 6.5 -13.5 10 38
2100 to 2750 29.5 16 34 7.5 -13.5 10 38
BGA7350 SOT617 Parallel, digital 5 245 50 to 250 24 18.5 44 6 -5.5 50 30
BGA7351 SOT618 Parallel, digital 5 250 50 to 250 28 22 45 6 -6 50 34
Selection guide
State-of-the-art QUBiC4
NXP’s industry-leading QUBiC4 technology, available since
2002, has been widely deployed in the field and offers
more consistent parameter performance compared to
GaAs technology. It speeds the migration from GaAs to
silicon and delivers more functionality in less space. High
integration reduces the design footprint and enables more
cost competitive designs. It also improves reliability and offers
significant savings in manufacturing expenditures.
Complete signal chain
NXP is one of the very few companies that supplies products
for the complete signal chain – from analog mixed-signal
components such as ADCs and DACs to RF small signal
devices and high-power RF amplifiers. This system-level
approach allows engineers to purchase products that work
well together as part of the overall system design, and makes
it easier for designers to optimize performance in today's
wireless infrastructure.
Furthermore, since NXP has in-house access to all the core IP,
the company is positioned to support even higher levels of
integration in the future.
42 NXP Semiconductors RF Manual 15th edition
2.1.2 Doherty amplifier technology for state-of-the-art wireless infrastructure
Best-in-class PA designs enable considerable energy savings
NXP’s latest power amplifier designs let the wireless infrastructure run with significantly higher energy
efficiency – towards “Green Base Stations”. In order to achieve the highest efficiencies currently possible,
NXP combines its latest generations of LDMOS technology (Gen7 & 8) with the Doherty concept. The high
performance of our LDMOS technology, matched with the efficiency of the Doherty technology, creates
power amplifiers that offer high efficiency, high gain, are easily linearizable, and are more cost-effective to
operate.
Developed by W.H. Doherty in 1936, the Doherty amplifier remained largely unused because the dominant
mobile communication system modulation techniques (FM, GMSK, and EDGE) did not require high peak-to-
average ratio (PAR) signals. For today's base stations, however, transmitting 3G, 4G, and multi-carrier signals
makes the high power and added efficiency of the Doherty approach the preferred option for most service
providers.
NXP’s Doherty designs ensure high efficiency while maintaining a very similar peak power capability of two
transistors combined. The input and output sections are internally matched, benefiting the amplifiers with
high gain, good gain flatness, and phase linearity over a wide frequency band.
Key features & benefits
`Contains splitter, main and peak amplifier, delay lines,
and combiner in one package
- 40% efficiency @ 10 W average power
- no additional tuning in manufacturing
`Design is as easy as with a single Class AB transistor
`Ideally suited for space-constrained applications
(e.g. remote radio heads, antenna arrays)
`Currently available for TD-SCDMA (BLD6G21L(S)-50) and
W-CDMA (BLD22L(S)-50); see chapter 3.7.1.4 for details
Integrated Doherty
NXP can even offer the world’s first fully integrated Doherty
designs. From the outside these devices look like ordinary
transistors. In fact, they are completely integrated Doherty
amplifiers that readily deliver the associated high efficiency
levels for base station applications. With the ease of design-in
of an ordinary Class AB transistor, they also provide significant
space and cost savings.
43NXP Semiconductors RF Manual 15th edition
Focus applications,
products & technologies
Key features & benefits
`Most efficient Doherty amplifier designs available to date
`Production-proven, consistent designs
`NXP’s LDMOS provides unsurpassed ruggedness
`Currently available for the following frequency bands:
- 728 to 821 MHz
- 869 to 960 MHz
- 1805 to 1880 MHz (DCS)
- 1930 to 1990 MHz (PCS)
- 1880 to 2025 MHz (TD-SCDMA)
- 2110 to 2170 MHz (UMTS / LTE)
- 2300 to 2400 MHz (WiBRO / LTE)
- 2500 to 2700 MHz (WiMAX / LTE)
- 3300 to 3800 MHz (WiMAX)
All of our product demonstrators are supported by
comprehensive documentation and hardware.
Please see chapter 3.7.1.7 for a complete list of available
designs.
Discrete Doherty amplifiers
In addition to the integrated versions, NXP offers product
demonstrators for very efficient, high-power, discrete two- and
three-way Doherty amplifiers. The two-way designs, based on
the BLF7G22LS-130 device, deliver 47.0 dBm (50 W) with 43%
efficiency and 15.7 dB gain for W-CDMA applications.
Our flagship three-way Doherty demonstrator even achieves
48% efficiency at 48 dBm (63 W) average output power and
15.0 dB gain with a two-carrier W-CDMA signal. The current
design covers the W-CDMA standard for band 1 operation
and is tailored towards high-yield, minimum-tuning, volume
manufacturing.
Featured Doherty designs
Freq band
(MHz)
PPEAK
(dBm)
POUT-AVG
(dBm)
VDS
(V)
Gain
(dB)
Drain Eff.
(%)
Type Main transistor Peak transistor
728-768 58 50 32 20.5 47 SYM BLF6G10LS-200RN BLF6G10LS-200RN
920-960 57.3 49.3 30 16 50 ASYM BLF8G10LS-160 BLF7G10LS-250
1476-1511 58.1 49.6 28 16 42 ASYM BLF7G15LS-200 BLF7G15LS-300P
1805-1880 58.6 51 28 16 47.6 3-WAY BLF7G20LS-200 2x BLF7G20LS-200
1930-1990 58.2 50 28 16 40 SYM BLF7G20LS-250P BLF7G20LS-250P
2110-2170 47 39 28 13 38 SYM BLD6G22L(S)-50 BLD6G22L(S)-50
2110-2170 57.2 49.2 28 16 47 3-WAY BLF7G22LS-160 2x BLF7G22L(S)-160
2300-2400 55 47.5 28 15.2 44 ASYM BLF7G24LS-100 BLF7G24LS-140
2500-2700 50.3 42.3 28 14.5 39 SYM 1/2 BLF7G27LS-90P 1/2 BLF7G27LS-90P
3400-3600 51 43 28 11.5 32 SYM BLF6G38-50 BLF6G38-50
44 NXP Semiconductors RF Manual 15th edition
Function Type fmin
(MHz)
fmax
(MHz)
P1dB
(W)
Package Planned
release
Description
HPA
BLF8G10L-160 700 1000 160 SOT502A Q311 Gen8 ceramic LDMOS transistor for GSM & LTE applications
BLF8G10L-300P 700 1000 300 SOT539A Q112 Gen8 ceramic push-pull LDMOS transistor for GSM & LTE
applications
BLF8G10L-320 700 1000 320 SOT502A Q112 Gen8 ceramic LDMOS transistor for GSM & LTE applications
BLF8G10L-80 700 1000 80 SOT502A3 Q411 Gen8 ceramic LDMOS transistor for GSM & LTE applications
BLF8G10LS-160 700 1000 160 SOT502B3 Q311 Gen8 ceramic LDMOS transistor for GSM & LTE applications
BLF8G10LS-300P 700 1000 300 SOT539B Q112 Gen8 ceramic push-pull LDMOS transistor for GSM & LTE
applications
BLF8G10LS-320 700 1000 320 SOT502B3 Q112 Gen8 ceramic LDMOS transistor for GSM & LTE applications
BLF8G10LS-80 700 1000 80 SOT502B Q411 Gen8 ceramic LDMOS transistor for GSM & LTE applications
2.1.3 The new generation of LDMOS RF power for wireless infrastructures: NXP's Gen8
NXP recently announced the 8th generation of its renowned RF power device portfolio for base stations.
Listening carefully to the world’s leading infrastructure providers and understanding their requirements, a
holistic approach was taken during the development of Gen8. This basically means that we scrutinized every
little detail of a power transistor and reconsidered the entire “transistor system” to come up with a new
generation, which performs markedly better than its predecessors and again sets standards for the industry.
Gen8 clearly addresses the key trends in the wireless
infrastructure industry
`Increasing signal bandwidths up to 100 MHz
`Cost sensitivity
`Reduction in the size/weight/volume of the cabinet
`Continuous need for greater electrical efficiency to reduce
cooling requirements and operational expenditure
`Ever increasing output power to unprecedented levels
`Need to deploy multi-standard and future-proof solutions
Gen8 is the answer to all these often conflicting requirements.
The package and die design, as well as input and output
match structures, have been optimized to enable wideband,
affordable, compact, multi-standard and highly efficient
Doherty power amplifiers.
The first wave of Gen8 transistors is deployed for applications
up to 960 MHz with excellent linearization capabilities, state-
of-the-art ruggedness and efficiencies in excess of 55% for
multicarrier GSM PAs. The second wave of products covers
WCDMA-LTE applications at 2.1 GHz. Solutions for all other
cellular frequency bands are currently being developed.
The first wave of Gen8 transistors
45NXP Semiconductors RF Manual 15th edition
Focus applications,
products & technologies
2.2 Broadband communication infrastructure
2.2.1 Connecting people, protecting your network : NXP's CATV C-family for the Chinese
SARFT standard
Specially designed for the Chinese Hybrid Fiber Coax (HFC) infrastructure, NXP's CATV C-family offers you
a total solution for cable TV networks. It is both flexible enough for connecting rural communities as part of
China’s "Connecting every village" program and powerful enough for upgrading major cities from analog to
high-end digital services. All C-type devices are compliant with the Chinese State Administration for Radio,
Film and Television (SARFT) standard, and cover most HFC applications in the 550 MHz to 1 GHz range.
Products
`BGY588C, BGE788C and CGY888C push-pull amplifiers
`BGD712C, CGD944C, CGD942C, CGD982HCi, CGD985HCi
and CGD987HCi power doublers
`BGO807C, BGO807CE optical receivers
Benefits
`Compliant with Chinese SARFT HFC networks standard
`Transparent cap allows confirmation of product authenticity
`Rugged construction
`Highest by Design internal ESD protection
Features
`Excellent linearity, stability and reliability
`High power gain
`Extremely low noise
`Silicon nitride passivity
`GaAs HFET dies for high end devices
Further extending our high quality CATV portfolio, this new
family lets you address an even wider range of
HFC applications. Dedicated solutions for the implementation
of CATV systems in China, our C-type devices deliver the
performance you need for modern TV infrastructures.
The BGY588C, BGE788C and BGD712C devices cover
the frequency range from 550 MHz to 750 MHz. Extending
the C-family portfolio into the high-end segment,
the CGD944C, CGD942C, CGY888C and BGO807C operate
between 40 MHz and 870 MHz and have been specifically
tested under Chinese raster conditions. Manufactured using
our GaAs HFET die process, the CGD942C and CGD944C are
high-gain, high-performance 870 MHz power doublers. The
CGD982HCi, CGD985HCi and CGD987HCi operate from
40 MHz to 1003 MHz and are specified for 870 MHz and 1
GHz. These power doublers are optimized for the Chinese
SARFT standard. They are capable of satisfying the demanding
requirements of top-end applications including high-power
optical nodes.
Our GaAs HFET MMIC dies are providing by design
the best ESD protection levels with no needs for the external
TVS components normally used with GaAs pHEMT devices.
All CATV C-type devices feature a transparent cap that makes
it easy to distinguish them from counterfeit products.
NXP C-family by application
Application BGY588C BGE788C CGY888C BGD712C BGO807C
BGO807CE
CGD942C
CGD944C
CGD982HCi
CGD985HCi
CGD987HCi
Optical node ••••
Ordinary optical receiver ••••
Distribution amplifier • • • •
Line extender amplifier • • • •
Terminating amplifier •••
C-family application information
46 NXP Semiconductors RF Manual 15th edition
bra823
BGY885A
BGO807C
BGO807CE
BGD812
H
L
OUT
port 1
BGD812
H
L
OUT
port 2
EQPAD
PAD
PAD
bra820
IN
port
OUT
port
BGY588C
BGE788C
CGY888C
EQPAD
bra821
IN
port
OUT
port
BGD712CBGY785A
BGY787
EQPAD
BGY588C, BGE788C and CGY888C
The last stage of an HFC network structure is called
a ‘terminating amplifier‘ or ‘user amplifier’ as it is close to
the subscribers. Each terminating amplifier requires a single
module such as BGY588C for 550 MHz, BGE788C for 750 MHz
and CGY888C for 870 MHz systems. These modules are fitting
perfectly in the Chinese "Connecting to Every Village" projects.
BGD712C
The BGD712C is a 750 MHz, 18 dB power doubler module.
It has been designed for 750 MHz optical nodes including
ordinary or optical receivers and distribution amplifiers.
It can also be used in line extender amplifiers together with
a 750 MHz push-pull module, such as BGY785A or BGY787.
As such it can be used widely in Chinese "Connecting to
Every Village" projects.
CGD944C and CGD942C
Our full GaAs power doublers modules, CGD942C and
CGD944C offer high output power and better CTB and
CSO than other modules. Designed for high-end HFC
networks containing optical nodes with multiple out-ports,
these modules enable each port to directly cover at least
125 subscribers. These two devices are ideal when used in
upgrading HFC networks to 870 MHz.
CGD982HCi, CGD985HCi and CGD987HCi
Our newest GaAs power doubler modules, CGD982HCi,
CGD985HCi and CGD987HCi are customized designs for
CATV hybrid fiber coax Chinese networks operating in the
40 MHz to 1003 MHz bandwidth, and specified with the
Chinese cable TV network official loading raster on top of the
NTSC loading traditional rasters. For use in optical notes for
fiber deep applications where the output power level needs
to be at its highest.
bra822
(N + 1)
RF switch
CGD94xC / CGD98xHCi
H
L
OUT
port 1
CGD94xC / CGD98xHCi
H
L
OUT
port 2
CGD94xC / CGD98xHCi
H
L
OUT
port 3
CGD94xC / CGD98xHCi
BGO807C
BGO807CE
BGO807C
BGO807CE
H
L
OUT
port 4
EQ
PAD
PAD
PAD
PAD
PAD
BGO807C
The BGO807C is an integrated optical receiver module
that provides high output levels and includes an integrated
temperature compensated circuitry. In your optical node
design, BGO807C enables a high performance / price ratio
and ruggedness. When upgrading an HFC network from
analog to digital, our BGO807C is the perfect fit.
47NXP Semiconductors RF Manual 15th edition
Focus applications,
products & technologies
Connecting people, protecting your network
NXP CATV C-family for the Chinese SARFT standard
Push-pull amplifiers
Parameters BGY588C BGE788C CGY888C
Power gain (dB) typ. 34.5 34.2 35.5
Slope cable equivalent (dB) range 0.2 - 1.7 0.3 - 2.3 1.5 typ.
Composite triple beat (dB) max. -57 -49 -68 typ.
Composite 2nd order distortion (dB) max. -62 -52 -66 typ.
Noise (@ fmax) (dB) max. 8 8 4 typ.
Total current consumption (mA) typ. 325 305 280
Frequency range (MHz) range 40 - 550 40 - 750 40 - 870
Power doublers
Parameters BGD712C CGD942C CGD944C CGD982HCi CGD985HCi CGD987HCi
Power gain (dB) typ. 18.5 23 25 23 24.5 27
Slope cable equivalent (dB) range 0.5 - 1.5 1 - 2 1 - 2 0.5 - 2 0.5 - 2 0.7 - 2
Composite triple beat (dB) max. -62 -66 typ. -66 typ. -66 -66 -66
Composite 2nd order distortion (dB) max. -63 -66 typ. -66 typ. -69 -69 -66
Noise (@ fmax) (dB) max. 7 5 5 5.5 5.5 5.5
Total current consumption (mA) typ. 395 450 450 440 440 440
Frequency range (MHz) range 40 - 750 40 - 870 40 - 870 40 - 1003 40 - 1003 40 - 1003
Optical receiver
Parameters BGO807C BGO807CE
Responsivity (Rmin) min. 800 800
Slope cable equivalent (dB) range 0 - 2 0 - 2
Composite triple beat (dB) max. -71 -69
Composite 2nd order distortion (dB) typ. -54 -53
Noise (@ fmax) (dB) max. 8.5 8.5
Total current consumption (mA) typ. 190 190
Frequency range (MHz) range 40 - 870 40 - 870
Connector - / SC0 / FC0
48 NXP Semiconductors RF Manual 15th edition
New CATV GaAs platform lay-out
2.2.2 Highly efficient line-up of 1 GHz GaAs modules for sustainable CATV networks
NXP high gain power doublers CGD104xHi and push-pulls CGY104x
Designed for 1 GHz “sustainable networks,” these high performance GaAs devices enable
extended bandwidth and higher data rates. They deliver increased network capacity and make way for high-
end services like HDTV, VoIP, and digital simulcasting.
Key features
`Excellent linearity, stability, and reliability
`High power gain for power doublers
`Extremely low noise
`Dark Green products
`GaAs HFET dies for high-end applications
`Rugged construction
`Superior levels of ESD protection
`Integrated ringwave protection
`Design optimized for digital channel loading
`Temperature compensated gain response
`Optimized heat management
`Excellent temperature resistance
Key benefits
`Simple upgrade to 1-GHz capable networks
`Low total cost of ownership
`High power-stress capability
`Highly automated assembly
Key applications
`Hybrid Fiber Coax (HFC) applications
`Line extenders
`Trunk amplifiers
`Fiber deep-optical-node (N+0/1/2)
`Bridgers
The NXP power doublers CGD104xH and CGD104xHi are ideal
for use in line extenders and trunk amplifiers. They support
fiber deep-optical-node applications (N+0/1/2), delivering
the highest output power on the market today. The GaAs HFET
die process delivers high gain, excellent CTB and CSO ratings,
along with lower current.
The new NXP CGY1047x push-pull family is the first line-up on
the market combining very low noise, best-in-class distortion
parameters, and low, “carbon footprint” capabilities. It delivers
the best performance for the lowest power consumption,
so it reduces OPEX and CO2 emissions
All of NXP’s 1 GHz solutions are designed for durability and
offer superior ruggedness, an extended temperature range,
high power overstress capabilities, and extremely high ESD
levels. As a result, they also reduce the cost of ownership.
The GaAs die is inserted in an HVQFN package that is then
mounted on thermal vias that manage heat transfer to the
heat sink. Temperature-control circuitry keeps the modules
high performance stable over a wide range of temperature.
Assembly is fully automated and requires almost no human
intervention, so repeatability remains very high.
49NXP Semiconductors RF Manual 15th edition
Focus applications,
products & technologies
bra822
(N + 1)
RF switch
CGD104xHi
H
L
OUT
port 1
CGD104xHi
H
L
OUT
port 2
CGD104xHi
H
L
OUT
port 3
CGD104xHi
H
L
OUT
port 4
EQ
PAD
PAD
PAD
PAD
PAD
CATV 1- GHz power doublers
Parameters CGD1040Hi CGD1042H CGD1042Hi CGD1044H CGD1044Hi CGD1046Hi
Power gain (dB) typ. 21 23 23 25 25 27
Slope cable equivalent (dB) typ. 1.5 1.5 1.5 1 1.5 0.5 - 2.0
Composite triple beat (dB) typ. -69 -69 -69 -69 -69 -73
Composite 2nd order distortion (dB) typ. -68 -68 -68 -68 -68 -68
Noise (@fmax) (dB) max 666665
Total current consumption (mA) typ. 440 450 440 450 440 460
Frequency range (MHz) range 40 - 1003 40 - 1003 40 - 1003 40 - 1003 40 - 1003 40 - 1003
CATV 1-GHz push-pulls
Parameters CGY1041 CGY1043 CGY1047 CGY1049 CGY1032
Power gain (dB) typ. 22 24 28 30 33
Slope cable equivalent (dB) typ. 2 2 2 1.6 1.8
Composite triple beat (dB) typ. -62 -62 -64 -62 -62
Composite 2nd order distortion (dB) typ. -64 -64 -66 -64 -64
Noise (@fmax) (dB) max. 5 5 4.5 5 5
Total current consumption (mA) typ. 250 250 250 250 265
Frequency range (MHz) range 40 - 1003 40 - 1003 40 - 1003 40 - 1003 40 - 1003
Quick reference data CATV 1 GHz power doublers and push-pulls
An optical node with multiple out-ports using the CGD1040Hi / CGD1042Hi / CGD1044Hi / CGD1046Hi
Upcoming products
Additional push-pulls, currently under development, will
extend the capabilities of the power doublers even further,
supporting almost all modern HFC applications. The push-pull
CGY1041 will deliver a gain of 21 dB, the CGY1043 a gain of
23 dB, the CGY1049 a gain of 29 dB and the CGY1032 a gain of
32 dB. NXP is also developing a new, highly integrated power
doubler. The CGD1046Hi will deliver, in one IC, a 26 dB power
gain with 60 dBmV output power and excellent ESD protection,
for the ultimate in high quality, distortionless devices.
50 NXP Semiconductors RF Manual 15th edition
All five devices are designed for high linearity and low noise
over a frequency range of 40 MHz to 1 GHz. They can be used
in conventional can tuners or with silicon tuner ICs. Compared
to GaAs solutions, they are less susceptible to ESD and offer a
cost savings of more than 50 percent.
Integrated biasing and switching functions reduce the number
of external components from roughly 17 to just two or three.
By comparison, a discrete LNA design would typically require six
to nine external components and, to realize the bypass function,
would need an extra four pin diodes and at least
eight additional passive components.
Each MMIC in the BGU703x/BGU704x are housed in a 6-pin
SOT363 (SMD) package. Each offers a flat gain between
40 MHz and 1 GHz, so there’s no gain fluctuation over the
typical frequency range. The low noise figure of 4 dB reduces
overall tuner noise, and the high linearity (IP3O = 29 dBm)
minimizes distortion. The input and output impedance is
adapted to the application (75 Ω), so there’s no need for
external matching.
To save power, the ICs can be powered-down during bypass
mode, for a total current consumption of less than 5 mA.
Also, to protect the LNA from external electrical discharge
in its function as the tuner input, every pin is equipped with
ESD protection of >2 kV human body model (HBM).
Key features
`Equipped with internal bias
`Programmable gain and bypass modes
`Flat gain between 40 MHz and 1 GHz
`Noise figure = 4 dB
`High linearity: IP3O = 29 dBm
`75 Ω input and output impedance
`Power-down during bypass mode
(current consumption < 5 mA)
`ESD protection > 2 kV human body model (HBM) on
all pins
Key applications
`Terrestrial and cable STBs
`Silicon and can tuners
`Personal and digital video recorders (PVRs, DVRs)
`Home networking and in-house signal distribution
`FM radios
`Antenna amplifiers
In set-top boxes that use multiple or network-interfaced module
(NIM) tuners, the RF signal usually needs to be distributed
or split. Very often, a low noise amplifier (LNA) is used to
compensate for signal loss when the signal is split with a balun
core.
The NXP BGU703x/BGU704x are LNA MMICs produced in
an SiGe:C process. All five products in the series are matched
to 75 Ω at both the input and the output, for easier use. The
BGU703x are suitable for supply voltages of 5 Volts and the
BGU704x for 3.3 Volts. The BGU7031 and BGU7041 are LNAs
with fixed gain. The BGU7032 and BGU7042 have an additional
bypass mode. The BGU7033 has two gain levels (GP = 10 dB
or 5 dB) and the bypass mode.
2.3 TV and satellite
2.3.1 LNAs for TV/STB tuners with programmable gain
NXP LNAs for STBs BGU703x for 5 V and BGU704x for 3.3 V supply voltage
This family of 5 V and 3.3 V wideband, low noise amplifiers is specifically designed for high linearity,
low noise performance for TV, DVR/PVR, set-top box tuner applications from 40 MHz to 1 GHz. The unique is
programmable gain compensates for tuner switch signal loss, which is becoming more important following
the trend of more tuners in one system, and improves overall system performance with 7-10 dB.
51NXP Semiconductors RF Manual 15th edition
Focus applications,
products & technologies
brb403
RF input
RF SW
VGA
BGU703x/BGU704x
BF1108 or BF1118
BGU7031/BGU7041 (optional)
WB LNA
surge
RF output
CONVENTIONAL
TUNER OR
SILICON TUNER
Block diagram of active splitter with passive loop-through
Type Package
Frequency
range Mode
@Gain (1) NF PL (1dB) OIP3 FL (2) RLout RLin
VCC ICC
(MHz) (V) (mA) (dB) (dB) (dBm) (dBm) (dB) (dB) (dB)
BGU7033 SOT363 40 - 1000
GP 10 dB 5 43 10 4.5 14 29 -0.2 12 18
GP 5 dB 5 43 5 6 9 29 -0.2 12 17
Bypass 5 4 -2 2.5 - 29 -0.2 8 8
BGU7032 SOT363 40 - 1000
GP 10 dB 5 43 10 4.5 14 29 -0.2 12 18
Bypass 5 4 -2 2.5 - 29 -0.2 8 8
BGU7031 SOT363 40 - 1000 GP 10 dB 5 43 10 4.5 14 29 -0.2 12 18
BGU7042 SOT363 40 - 1000
GP 10 dB 3.3 38 10 4 12 29 -0.2 12 21
Bypass 3.3 3 -2 2.5 - 29 -0.2 10 10
BGU7041 SOT363 40 - 1000 GP 10 dB 3.3 38 10 4 12 29 -0.2 12 21
Notes:
(1) Gain = Programmable gain (GP)
(2) Flatness of frequency response = FL
LNAs for set-up boxes (75 Ω)
52 NXP Semiconductors RF Manual 15th edition
Fully integrated Ku-band downconverters TFF101xHN
The TFF101xHN is a family of fully integrated downconverters
for Ku-band LNBs. They give the best RF performance in terms
of phase noise, gain, and noise figure at the lowest current
consumption in the market.
Ku-band downconverter TFF101xHN/N1 for LNB
`Typical application: Universal Single LNB & Twin LNB
`Ultra-low current consumption: 54 mA over PVT
`Only 7 external components
`No inductors
`Single supply domain: 5 V
`Uses low-cost fundamental 25 MHz crystal
`High PL1dBo = 3 dBm / 3OIPo = 13 dBm
`Best-in-class PN < 1.8 deg RMS
- 10 kHz to 13 MHz integration bandwidth
`Multiple gain types available
- TFF1014HN/N1 36 dB
- TFF1015HN/N1 39 dB
- TFF1017HN/N1 42 dB
- TFF1018HN/N1 45 dB
`Flat gain over frequency (< 2 dBpp)
`Input & output matched 50 Ω
`Small leadless DHVQFN16 package (2.5 x 3.5 x 0.85 mm)
RF transistors BFU710F/730F
The BFU710F and BFU730F are wideband RF transistors that can
be used as an LNA or as a mixer for a DBS LNB in the Ku-band.
In either application, they deliver good noise and linearity, a
higher gain at a lower current consumption compared to their
GaAs pHEMT equivalents, and the cost advantage of silicon.
BFU710F as LNA in Ku-band LNB
`Typical application: LNA2 for single output LNB
`Overall similar RF performance to GaAs pHemt LNAs
`Power consumption: 3.5 mA
`Single supply: 3/5/6 V
`High RF gain: 13.5 dB
`Low noise figure: 1.6 dB
`Linearity (OIP3): 12 dBm
2.3.2 Complete satellite portfolio for all LNB architectures
NXP Satellite LNB devices TFF101xHN, BFU710F/730F, and BGA28xx
Designed for use in LNAs, mixers, and IF amplifiers, these robust, small-footprint products are the latest
additions to NXP's leading portfolio for satellite LNB architectures. They are manufactured in NXP’s
groundbreaking QUBiC4X SiGe:C and QUBiC4+ process technology.
BFU710F as mixer in Ku-band LNB
`Typical application: Active mixer for single output LNB
`Single supply 3/5/6 V
`Low power consumption: 2.5 mA
`LO drive < 0 dBm
`SSB noise figure < 8 dB (including BPF at the input)
`SSB conversion gain > 5 dB (including BPF at the input)
`Linearity (OIP3) > 0 dBm
`LO-RF isolation min 20 dB
`RF match better than 10 dB
`IF match better than 8 dB
BFU730F as LNA in Ku-band LNB
`Typical application: LNA2 and LNA3 for multiple output LNB
`Overall similar RF performance to GaAs pHemt LNAs
`Power consumption: 11 mA
`Single supply 3/5/6 V
`Very high RF gain: 11.5 dB
`Low noise figure: 1.25 dB
`Linearity (OIP3) > 17 dBm
`Return loss > 10 dB
MMICs BGA28xx as IF amplifiers (1st stage & output stage)
For compatibility with existing designs, the series uses market
standard packages: the SOT363 and the pin-compliant
SOT363F. The pinning is identical to NXP’s current gain
block family, and the blocks deliver similar noise figures. New
features include flatter gain, a positive gain slope, improved
P1dB vs Icc, and no necessity for an output inductor.
`Internally matched at 50 Ω
`Gain slope > 0.5 dB
`Single supply voltage: 3.3 or 5 V
53NXP Semiconductors RF Manual 15th edition
Focus applications,
products & technologies
Satellite outdoor unit, LNB for multiple users
Fully integrated mixer / oscillator / downconverter
horizontal
antenna
brb022
H low
IF out 1
low
3rd
stage
LNA
(4 x 2)
IF
SWITCH
oscillator
vertical
antenna
2nd
stage
LNA
1st
stage
LNA
3rd
stage
LNA
2nd
stage
LNA
1st
stage
LNA
BIAS IC
IF amplifier
IF
amplifier
IF out 2
IF
amplifier
V low
IF amplifier
H high
high oscillator
IF amplifier
V high
IF amplifier
mixer
mixer
mixer
mixer
`Reverse isolation: > 30 dB up to 2 GHz
`Best-in-class power vs current consumption
`Noise figure: 4 to 6 dB at 1 GHz
`Unconditionally stable (K > 1)
`High-compression-point models work without output inductor
`6-pin SOT363 plastic SMD package
These products – the integrated downconverters TFF101xHN,
the wideband transistors BFU710F/730F for LNA and mixer
functionality, and the BGA28xx series of IF MMICs – are
the most recent additions to NXP’s leading portfolio for
satellite LNB. They join the other discrete products, including
oscillators, amplifiers, and switches, to provide complete
coverage for all LNB architectures.
Since the ICs, transistors, and the MMICs are manufactured
in NXP’s industry-leading QUBiC4X SiGe:C and QUBiC4+
process, they offer better overall RF performance and are more
robust than their GaAs equivalents with the cost advantage
of silicon. The process technology also enables higher
integration, for added features. NXP owns the industrial base
for production (wafer fab, test, assembly), so volume supplies
can be assured.
NOTE: Also look at chapter 1.4.4 satellite outdoor unit.
001aan954
BPF
BIAS
LB/HB/H/V detection
pHemt bias
LO oscillator control
linear regulated 5 V
Hor
10.7 ~ 12.75 GHz
1st
2nd
Ver
25.000 MHz
V/T
LIN
IF amps
BFU710F
TFF101xHN
HB
• 0.95 ~ 1.9 GHz/
® 1.1 ~ 2.15 GHz
¬ DC 13 (H)
or 18 (V)
¬ 0 or 22 kHz
PLL/VCO
LOOP
FILTER
mixer
54 NXP Semiconductors RF Manual 15th edition
2.3.3 VSAT, 2-way communication via satellite
Design a Ku-/ Ka-band VSAT transceiver that meets IESS-308 with NXP's Ku-/ Ka-band RF LO
generators
The TFF100xHN family are Ku-band RF PLLs, with integrated VCO intended for low phase-noise local-
oscillator (LO) circuits in Ku- & Ka-band VSAT transmitters and transceivers. Manufactured in a high
performance SiGe:C process, these devices deliver extremely low phase noise and comply with the IESS-308
from Intelsat.
Features
`Phase noise compliant with IESS-308 (Intelsat)
`Differential input and output
`Divider settings at 16, 32, 64, 128 or 256
`Lock-detect output
`SiGe:C technology (120 GHz fT process)
`HVQFN24 (SOT616-1) package
Applications
`VSAT block upconverters
`VSAT down conversion
`Local oscillator signal generation
VSAT networks are commonly used to transmit narrowband
data, such as point-of-sale transactions for credit cards, or to
transmit broadband data that supports satellite Internet access
to a remote location, VoIP, or video.
The network typically consists of a dish antenna, an outdoor
unit, and an indoor unit. The outdoor unit is used for
frequency translation between RF and IF, and usually includes
a microwave-based uplink/downlink separator, a low noise
block (LNB) for receiving the downlink signals, and a block
Upconverter (BUC).
The VSAT ICs can be used to create the LO generator for a
linear BUC (meaning the IF or RF conversion is done by mixing
with an LO).
To enable precise frequency and time multiplexing, the
downlink signal provides an accurate frequency reference of 10
MHz. The indoor unit frequency multiplexes this with the uplink
IF signal, and the LO signal in the BUC needs to be frequency-
locked to the reference.
The TFF100xHN ICs are housed in a 24-pin HVQFN (SOT616-1)
package. The pins have been assigned for optimal performance.
Three voltage domains are used to separate the block on the
IC, and two pins for each output (OUT-P and OUT-N) have been
reserved to match a typical layout using a linewidth of Z = 50 Ω
microstrip on a 20-mil RO4003 board (1.1 mm).
The ground pins have been placed next to the reference input
and the output, and, to minimize crossings in the application,
all the supply pins are on the same side of the IC.
55NXP Semiconductors RF Manual 15th edition
Focus applications,
products & technologies
Satellite
HUBVSATs
Satellite
HUBVSATs
brb200
LF LF
/1305
(/960)
156.25 kHz
(208.83 kHz)
13.05 GHz settings
(12.8 GHz settings)
12.8~13.05
on-chip VCO203.90625 (200) MHz
cleanup PLL build around VCXO
narrow bandwidth
203.90625 (200) MHz > 13.05 (12.8) GHz
TFF1003 @ DIV = 64 PLL with on-chip VCO
TFF1003HN
band
pass
filter
band
pass
filter
solid
state
power
amp
amp
/64
(/48) PFD PFD
from
indoor
unit
synchronized QPSK data on L-band carrier in the range 0.95~1.45 GHz (extended range: 0.95~1.7 GHz)
10 MHz
/64
mixer
Type Package fIN(REF)
VCC ICC
PLL phase noise
@ N=64 @ 100 kHz
PLL Output buffer Input
fo(RF)
PoRLout(RF) Si
Typ Max Typ Max Min
(MHz) (V) (mA) (dBc/Hz) (GHz) (dBm) (dB) (dBm)
TFF1003HN SOT616 50 - 815 3.3 100 -92 12.8 - 13.05 -5 -10 -10
TFF1007HN SOT616 228.78 - 234.38 3.3 130 -104 14.62 - 15 -3 -10 -10
TFF1008HN SOT616 220.91 - 225.2 3.3 130 -104 14.1 - 14.4 -3 -10 -10
Typical VSAT network
Complete LO generator for linear BUC with TFF1003HN
56 NXP Semiconductors RF Manual 15th edition
2.3.4 Low noise LO generators for microwave & mmWave radios
NXP LO generators (integrated VCO/PLL) TFF11xxxHN
Manufactured in NXP’s breakthrough QUBiC4X SiGe:C process technology, these highly integrated,
alignment-free LO generators are low-power and low-spurious solutions that simplify design-in and lower
the total cost of ownership.
These low noise local-oscillator (LO) generators, optimized
for use in many different microwave applications between
7 and 15 GHz, deliver highly accurate performance in a small
footprint. They require no alignment or frequency modification
on the production line, so they simplify manufacturing. High
integration saves board space and makes design-in easier, for
lower overall cost and faster development.
Since these ICs are manufactured in NXP’s industry-leading
QUBiC4X SiGe:C process, they offer better overall RF
performance, are more robust than their GaAs equivalents,
and consume much less power. The process technology also
enables higher integration, for added features. NXP owns the
industrial base for production (wafer fab, test, assembly),
so volume supplies can be assured.
The TFF1003HN is the basis for the entire family of LO
generators. It has VCO coverage of 12.8 to 13.05 GHz and
accepts input signals from 50 to 816 MHz. The divider can be set
for 16, 32, 64, 128, or 256, and the output level is -5 dBm with a
stability of ±2 dB. The family of LO generators is completed by
a range of 18 different devices operating in a center frequency
ranging from 7 to 15 GHz. The RF performance of all these
devices is consistent with the TFF1003HN.
All the LO generators have low power dissipation
(330 mW typ), and all are available in a space-saving 24-pin
HVQFN package.
Features
`TFF11xxxHN family: lowest-noise LO generators for
a full family in 7 to 15 GHz range
`Maximum power consumption for all types is 330 mW (typ)
`Phase-noise compliant with IESS-308 (Intelsat)
`Proven QUBiC4X SiGe:C technology (120 GHz fT process)
`External loop filter
`Differential input and output
`Lock-detect output
`Internally stabilized voltage reference for loop filter
`24-pin HVQFN (SOT616-1) package
Applications : TFF11xxxHN family
`Industrial/medical test and measurement equipment
`Electronic warfare (EW)
`Electronic countermeasures (ECM)
`Point-to-point
`Point-to-multipoint
`Satellite communication/VSAT
`Radar systems
Full portfolio overview of low noise LO generators for
general microwave applications at chapter 3.4.4
57NXP Semiconductors RF Manual 15th edition
Focus applications,
products & technologies
Key features & benefits
`Low noise figure of 0.9 dB and choice of system-optimized
gain of 16.5 or 18.5 dB, allowing for the best GPS reception
`Adaptive biasing dynamically suppresses strong cellular and
WLAN transmit signals, further optimizing GPS reception
`Only 2 external components and 1.45 x 1.0 mm package
size, enabling the smallest footprint and lowest external
component cost
`AEC-Q100 qualification (BGU7004, BGU7008), meaning
highest reliability under harsh conditions
Key applications
`Smart phones
`Feature phones
`Tablets
`Personal navigation devices (PND)
`Digital still camera (DSC)
`Digital video camera (DVC)
`RF front end modules (used in phones)
`Complete GPS chipset modules (used in DSC)
`Automotive applications (BGU7004/8): toll collection,
emergency call
`Theft protection (laptop, ATM)
Adaptive biasing
GPS signal power levels are weak and below the noise floor
at -155 dBm. Moreover, in many consumer products such as
smart phones, inter-modulation and harmonics caused by
strong transmitters such as WLAN, can drive the GPS LNA
into compression. With adaptive biasing, increasing output
power from jammers is immediately detected, and current is
temporarily increased. Adaptive biasing dynamically suppresses
jammers, maintaining optimal GPS signal reception for as long
as possible.
2.4 Portable devices
2.4.1 QUBiC4X SiGe:C LNAs for GPS, GloNass and Galileo with AEC-Q100 qualification
NXP's GPS low noise amplifiers offer the best reception of weak signals because of dynamic suppression
of strong cellular and WLAN transmit signals. Moreover, as only two external components are required,
designers can save up to 50% in PCB size and 10% in component cost.
12
13
14
15
16
17
18
19
20
21
22
-80 -70 -60 -50 -40 -30 -20 -10 0
Gain [dB]
P_Jammer at input DUT [dBm]
Gain vs. jammer power for NXP GPS LNA
adapve biasing vs Competor.
(Pin 1575 MHz = -45 dBm, jammer at 1850 MHz).
1
Freq.
Power
GPS band
1575 MHz Jammer:
GSM 1850
GPS Signal
Input power
Output power
58 NXP Semiconductors RF Manual 15th edition
@ 1.575 GHz
Type Package
Supply
voltage Supply current Insertion power gain Noise
figure
Input power at 1 dB gain
compression
Input third-order intercept point
f1 = 1713 MHz, f2 = 1851 MHz
Vcc Icc |s21|2NF PL(1dB) IP3i
(V) (mA) (dB) (dB)
(dBm) (dBm)
Min Max Min Typ Max Min Typ Max Typ
Vcc =
1.8 V,
Min
Vcc =
1.8 V,
Typ
Vcc =
2.5 V,
Icc =
5 mA
Vcc =
2.85
V,
Min
Vcc =
2.85
V,
Typ
Vcc =
1.8 V,
Min
Vcc =
1.8 V,
Typ
Vcc =
2.5 V,
Icc =
5 mA
Vcc =
2.85
V,
Min
Vcc =
2.85
V,
Typ
BGU7003 SOT891 2.2 2.85 3 - 15 16 18.3 20 0.8 - - -20 - - - - 0 - -
BGU7004^ SOT886 1.5 2.85 - 4.5 - - 16.5* - 0.9 -14 -11 - -11 -8 5 9 - 5 12
BGU7005 SOT886 1.5 2.85 - 4.5 - - 16.5* - 0.9 -14 -11 - -11 -8 5 9 - 5 12
BGU7007 SOT886 1.5 2.85 - 4.8 - - 18.5** - 0.9 -15 -12 - -14 -11 1 4 - 2 5
BGU7008^ SOT886 1.5 2.85 - 4.8 - - 18.5** - 0.9 -15 -12 - -14 -11 1 4 - 2 5
Type Package Package size MMIC * SMD's
Appl.
SMD size SMD's
area Appl. area
X Y Pins Pitch Area X Y
mm mm mm # mm mm2# mm mm mm2mm2
BGU7005/7 SOT886 1.45 x 1 1.7 1.25 6 0.5 2.13 2 1.5 0.8 2.4 4.53
Competitor Wafer level package 1.26 x 0.86 1.5 1.1 6 0.4 1.65 6 1.5 0.8 7.2 8.85
Competitor Wafer level package 0.86 x 0.86 1.1 1.1 4 0.4 1.21 4 1.5 0.8 4.8 6.01
Competitor Thin small leadless package 2 x 1.3 2.25 1.55 6 0.5 3.49 4 1.5 0.8 4.8 8.29
Competitor Thin small leadless package 1.4 x 1.26 1.65 1.5 6 0.48 2.48 4 1.5 0.8 4.8 7.28
Competitor Thin small outline non-leaded 1.5 x 1.5 1.75 1.75 6 0.5 3.06 5 1.5 0.8 6 9.06
* Incl. keep out area on pcb (common used assembly rule)
Smallest footprint
Selection guide
^ = AEC-Q101 qualified (some limitations apply)
* = 16.5 dB without jammer / 17.5 dB with jammer
** = 18.5 dB without jammer / 19.5 dB with jammer
59NXP Semiconductors RF Manual 15th edition
Focus applications,
products & technologies
RF radiation is not a new technology in medicine. It is currently
used for imaging purposes in MRI (magnetic resonance imaging)
and EPRI (electron paramagnetic resonance imaging), techniques
that employ frequencies from a few megahertz to about 500 MHz.
Other well-known external heat-treatments to rejuvenate skin or
relieve muscle pain make use of frequencies around 480 kHz – not
too demanding in terms of RF. Surgical equipment to cut and
simultaneously coagulate blood vessels runs off RF at about 5 MHz.
The latter application belongs to a class of treatment techniques
that is growing rapidly and uses RF radiation to deposit energy
locally at various parts of the body – in general to “ablate”
(remove) unwanted tissue. Inside the body, the RF energy heats
the surrounding tissue until it is desiccated and/or necrotized. The
damaged tissue will later be re-absorbed by the surrounding, living
tissue. Further application examples for RF ablation include cancer
treatment in the lung, kidney, breast, bone and liver, removal of
varicose veins, treatment of heart arrhythmia, and a growing list of
other applications that benefit from the high control and feedback
possible with RF.
Another advantage of RF in this context is the fact that it can be
applied via small catheters ending in antennas that deploy the RF
signal. Unlike older, direct-current techniques, the tissue is heated
only very locally around the antenna. Neighboring nerves (and the
heart) are not stimulated. This led to the development of a variety
of specialized catheters, used during minimally invasive surgery,
along with ultrasound or X-ray imaging to determine the exact
location of the RF-active part. During the treatment, the impedance
of the surrounding tissue can be monitored and the end-point
determined. With proper catheters, one can even achieve “self
limitation” due to the reduced uptake of RF energy in desiccated
tissue. Likewise, the RF frequency can be used to tune the energy
deposition zone around the catheter: the higher the frequency, the
smaller the penetration depth – and hence the volume to deposit
the RF energy – in the watery tissue.
With the trend towards higher RF frequencies and powers, the
complexity of RF generators and the requirements for the device
technology also increase. Above 10 MHz, say, up to 3.8 GHz, the
technology of choice for power amplifiers is Si LDMOS (laterally
2.5 Industrial, scientific & medical
2.5.1 Medical applications driven by RF power: From imaging to cancer treatment,
a flexible and versatile technology in the doctor’s toolbox
diffused metal oxide semiconductor). This technology has proven
to be powerful, efficient, and rugged in base stations, radar
systems, broadcast transmitters, and other industrial, scientific,
and medical (ISM) applications. LDMOS is available from up to
50 V supply to achieve power levels up to 1,200 W per single
device, with outstanding ruggedness and high gain and efficiency.
To drive and control the LDMOS power amplifier stages, it
takes voltage-controlled oscillators, phase locked loops, and
medium power amplifiers. These parts of the RF signal chain are
conveniently available based on reliable and high volume SiGe:C
(QUBiC) semiconductor technologies. Going a step further, one
can even use high-speed converters to drive the signal chain
entirely from the digital domain, for full and easy control over the
shape and modulation of the applied RF.
RF implications
These in-situ medical applications and, in general, most of the ISM
applications, usually form highly mismatched RF loads during some
part of the usage cycle. This in turn means that, without protection
or other measures, all of the "injected" RF power reflects back into
the final stage of the amplifier and needs to be dissipated in the
transistor(s), and most likely destroys the device(s) if this situation
lasts too long. LDMOS transistors are designed to be extremely
rugged and generally withstand these mismatch situations without
degrading over time.
This device ruggedness, or the ability to withstand “harsh” RF
conditions in general, be it mismatch or extremely short pulse rise
and fall times, is essential for reliable device performance. RF power
companies have gone to great lengths to achieve best-in-class
device ruggedness. The technologies have been hardened under
the most stringent ruggedness tests during development, which is
particularly true for the 50 V technology. Among other factors, the
base resistance of the parasitic bipolar and the drain extension of
the LDMOS device play key roles in this respect.
This ruggedness, combined with the power density and the high
efficiencies achievable, make LDMOS the preferred technology for
RF power amplifiers up to 3.8 GHz.
RF technology is making its way into all kinds of medical applications, ranging from the
well-known imaging techniques (MRI, EPRI) over low frequency, external heat treatment,
and electro-surgical tools, to minimally invasive endoscopic cancer treatment (RF ablation).
One clear trend is the increasing share of RF-based technologies for ablation. Another is the
trend towards higher RF frequencies (several GHz) and higher powers (> 100 W) in order to
achieve higher spatial resolution, better control, and shorter treatment times.
60 NXP Semiconductors RF Manual 15th edition
This technology works without any additional electrodes in
the bulb, unlike standard high-intensity discharge lamps.
No electrodes means very long operating lifetimes, since
the contamination and wire erosion that lead to decreased
efficiency and eventual lamp failure are precluded. The RF
light source lives up to 50,000 hrs when it reaches 50% of its
original light output. Typical high-intensity discharge lamps, by
comparison, achieve 20,000 hrs operating life. Another strong
point of the plasma light is its efficiency: 1 W of RF power is
converted to 130-140 lm of light. This leads to very compact,
very bright lamps that easily emit 10,000 to 20,000 lm of white
light with a close-to-sunlight color rendition.
The key enabler for the RF light source is RF technology,
based on Si LDMOS RF power transistors. LDMOS technology
operating at 28 V is the leading RF power technology for cellular
base stations or broadcast transmitters as final amplifier stages
in the frequency range between a few MHz up to 3.8 GHz.
Recently, another LDMOS format, 50 V LDMOS, has emerged
for use in broadcast, ISM, defense and avionics applications.
It combines high power density to achieve power levels up to
1,200 W per single device and outstanding ruggedness, with
high gain and efficiency at frequencies of up to 1.5 GHz.
Comparison of lighting technologies
The table below summarizes currently available technologies that
generate bright light with varying degrees of efficiency. It lists a
few key parameters, including lifetime, luminous flux, efficacy, color
rendition index, color temperature, start-up time, and re-strike time
(time to start after switch-off from normal operation).
Type Lifetime
(hrs)
Luminous
flux
(klm)
Efficacy
(lm/W)
Color
rendering
Color
temperature
(K)
Start-up
time
(s)
Re-strike
time
(s)
Incandescent 2,000 1,700 10 to 17 100 3200 0.1 0.1
Fluorescent 10,500 3,000 115 51 to 76 2940 to 6430 0.3 0.1
LED 25,000 130 60 to 100 30 6000 0.1 0.1
HID (high-
intensity
discharge)
20,000 25,000 65 to 115 40 to 94 4000 to 5400 60 480
RF plasma 50,000 25,000 100 to140 70 to 94 4000 to 5500 30 25
2.5.2 RF-driven plasma lighting:
The next revolution in light sources are powered by solid-state RF technology
The plasma light source is among the brightest and most
efficient available to date and boasts a very long life time.
Important to note is the high brightness per bulb: much
brighter than LEDs, for example. Consequently, it takes
multiple LEDs to generate the light output of a single plasma
light source. Hence, LED luminaries for street lighting will be
considerably larger than those for plasma light sources.
RF implications
The RF plasma lighting sources can operate at a wide range of RF
frequencies, but initial applications typically focus at frequencies
of around a few hundred megahertz. At these frequencies both
the 28 and 50 V LDMOS technologies can be used, yielding
high efficiency values of 70% to more than 80% and low-heat
dissipation making compact plasma lamp designs possible.
The RF-driven plasma light is a perfect example of novel
applications that can be powered by RF energy in the
industrial, scientific, and medical (ISM) realm. Established
technologies use RF to pump a gas discharge in a laser cavity.
These "gas discharge" applications and in general, most of
the ISM applications, typically form highly mismatched RF
loads during some part of the usage cycle. In the case of
gas discharges, for example, the gas cavity acts as an "open
circuit" during switch-on. This in turn means that without
protection or other measures, all of the "injected" RF power
reflected back into the final stage of the amplifier needs to
be dissipated in the transistor(s) right there and most likely
destroys the device(s) if this situation lasts too long. After the
discharge strikes, the load impedance reverts to "matched,"
eventually, and the transistor sees an acceptable load.
Obviously, these mismatched conditions occur every time the
plasma is "switched on,” exerting strain on the finals. LDMOS
transistors are designed to be extremely rugged and generally
withstand these mismatch situations without degrading over
time.
This ruggedness, combined with the high power density and
efficiency achievable, make LDMOS the preferred technology
for RF lighting and other equally demanding applications in the
ISM realm.
Recent developments in RF power technology, such as improved cost structure, ruggedness. and power levels
of up to 1200 W per device, have enabled a breakthrough light source technology, called ‘RF plasma lighting’.
All RF plasma lighting sources make use of a small, electrode-less quartz lightbulb that contains argon gas
and metal halide mixtures. The bulb is powered by direct RF radiation, which ignites the gas mixtures to
create and power a bright plasma, the color of which can be tuned by the composition of its constituents.
Table 1: Comparison of light-generation. Note: numbers are only valid for a
qualitative comparison. Source: www.wikipedia.org and references therein.
61NXP Semiconductors RF Manual 15th edition
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products & technologies
Key features & benefits
`40 / 110 GHz transition frequency allows for applications up
to 18 GHz and beyond.
`From low noise figure of 1.45 dB and high gain of 13.5 dB at
12 GHz to high linearity of 34dBm (OIP3) at 1.8 GHz, gives a
broad choice of parts for the perfect fit for each application.
`Consuming only 3 mA to generate 13.5 dB gain at 12 GHz
`Plastic surface-mount SOT343F package for high
performance and easy manufacturing
Key applications
`2nd and 3rd LNA stage and mixer stage in DBS LNBs
`Ka- / Ku-band DROs
`Satellite radio (SDARS) LNA
`C-band / X-band high-output buffer amplifier
`AMR
`WLAN / WiFi
`ZigBee
`Bluetooth
`FM radio
`GPS
`LTE, cellular, UMTS
`Mobile TV
`RKE
`High linearity applications
`Low current, battery-equipped systems
`Low noise amplifiers for microwave communications systems
`Medium output power applications
`Microwave driver / buffer applications
2.5.3 QUBiC4 Si and SiGe:C transistors for any RF function
NXP's 6th (Si) and 7th (SiGe:C) generation RF transistors offer the best RF noise figure versus gain
performance at 12 GHz , drawing the lowest current. This performance allows for better signal reception
at low power and enables RF receivers to operate more robustly in noisy environments. This family of 6th
(Si) and 7th (SiGe:C) generation RF transistors can be used in most RF applications as low noise amplifiers
(BFUx10F, BFUx30F, BFU725/N1), high linearity and high output amplifiers (BFUx60F, BFUx90F), buffer
amplifiers, mixers, and oscillators.
Demo boards and application notes
`Single-stage Ku-band LNA using BFU730F
`Single-stage 2.3-2.7 GHz LNA with BFU730F
`Single-stage 5-6 GHz WLAN LNA with BFU730F
`1st stage SDARS LNA with BFU730F
`2nd stage SDARS LNA with BFU690F
Full portfolio overview of 6th and 7th generation RF
wideband transistors at chapter 3.3.1
62 NXP Semiconductors RF Manual 15th edition
2.5.4 Building on decades of innovation in microwave and radar
NXP builds on more than 50 years of history in semiconductor technology and component design. For more
than three decades we have led in providing high performance RF technologies for microwave applications.
The company has built a strong position in the field of RF small signal and power transistors for microwave
amplifiers with best-in-class Si devices and processing technologies.
We were the first semiconductor company to supply S-band
transistors (2700 to 3500 MHz) based on laterally diffused
metal-oxide-silicon (LDMOS). To further strengthen our
position towards the future, we are currently developing
new high power and high-bandwidth technologies based on
gallium nitride (GaN) material.
Another enabling technology is NXP’s BICMOS process
QUBiC, which is available in several variants with fT up to
200 GHz, each specialized to address specific small signal RF
applications.
The product portfolio encompasses:
- Low noise amplifiers (LNAs)
- Variable gain amplifiers (VGAs)
- Mixers
- Local oscillators (LOs)
- LO generators
NXP now also focuses on architectural breakthroughs and
has developed highly integrated products for microwave and
millimeter wave. One example is a family of LO generators
from 7 GHz to 15 GHz with integrated PLL and VCO. Another
example is an integrated RF power module in S-band
(3.1-3.5 GHz) at 200 W.
RF small signal product highlight:
Manufactured in NXP’s breakthrough QUBiC4X SiGe:C process
technology, these highly integrated, alignment-free LO
generators TFF1xxxHN are low-power, low-spurious solutions
that simplify design-in and lower the total cost of ownership.
Features
`Lowest noise LO generators for 7 to 15 GHz range
`Maximum power consumption for all types, typical 330 mW
`Phase-noise compliant with IESS-308 (Intelsat)
`Proven QUBiC4X SiGe:C technology (120 GHz fT process)
`External loop filter
`Differential input and output
`Lock-detect output
`Internally stabilized voltage reference for loop filter
RF power product highlight
The BLS6G2933P-200 is the first LDMOS-based, industry-
standard pallet produced by NXP. This pallet offers more than
40% efficiency and includes the complete bias network for
S-band applications.
63NXP Semiconductors RF Manual 15th edition
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Features:
`Reduces component count and considerably simplifies radar
system design
`P1 dB output power 200 W
`Efficiency > 40%
`Industry-standard footprint
`50 Ω in/out matched for entire bandwidth
`Lightweight heat sink included
` The advantages of LDMOS in comparison with Bipolar
- Higher gain and better efficiency
- Better ruggedness – overdrive without risk to 5 dB
- Improved pulse droop and insertion phase
- Consistent performance – no tuning required
- Improved thermal characteristics – no thermal runaway
- Non-toxic packaging and RoHS-compliance
For a complete list of products, see the respective small
signal and power microwave pages
Microwave applications and bands of operation
System Frequency
VHF and UHF <1 GHz
L-band 1200 - 1400 MHz
S-band 2700 - 3500 MHz
X-band 8000 - 12000 MHz
Commercial Avionics
DME (Distance Measuring Equipment) 978 - 1215 MHz
Transponders
Mode A / Mode S / Mode C / TCAS 1030 - 1090 MHz
Military Avionics
IFF transponders (Identification, Friend or Foe) 1030 - 1090 MHz
TACAN (Tactical Air Navigation) 960 - 1215 MHz
JTIDS / MIDS
(Joint Tactical Information Distribution System) 960 - 1215 MHz
Marine radar 9300 - 9500 MHz
64 NXP Semiconductors RF Manual 15th edition
2.5.5 Digital broadcasting at its best
The BLF881 / BLF888A transistor line-up enables today’s most powerful and
efficient digital broadcast transmitter applications.
BLF881
This transistor is based on NXP’s 50 V LDMOS technology and
features 120 W RF output power for broadcast transmitter and
industrial applications. An unmatched device, the BLF881 can be
used in the HF to 1 GHz range. The excellent ruggedness and
broadband performance of this device makes it ideal for digital
transmitter applications – either on its own or as a driver in
combination with the high power transistor BLF888A.
The BLF881 is also available in an earless version, the BLF881S,
which enables an even more compact PCB design.
BLF888A
Running from a 50 V supply voltage, the BLF888A is a 600 W
LDMOS RF power transistor for broadcast transmitter and
industrial applications. Being a matched device, BLF888A
is optimized for digital signal broadcasting and can deliver
120 W average DVB-T output power over the full UHF band
from 470 MHz to 860 MHz with 20 dB power gain and 31%
drain efficiency. The excellent ruggedness of this transistor
(it withstands a VSWR in excess of 40:1) makes it the ultimate
choice as final stage for digital transmitter applications –
ideally accompanied by a BLF881 as the driver. This device is
also available as an earless package, denoted BLF888AS, to
enable surface mount assembly processes and take optimum
advantage of the very low thermal resistance package.
Key features and benefits
`Excellent efficiency and reliability
`Highest power levels in the market
`Best-in-class ruggedness designed into all devices
`Best broadband performance
`Easy power control
`Best-in-class design support
`Low thermal resistance design for unrivalled reliability
`Advanced flange material for optimum thermal behavior and
reliability
`Designed for broadband operation (470 to 860 MHz)
Key applications
`Analogue and digital TV transmitters
Function Type fmin (MHz) fmax (MHz) CW - P1dB
(W) VDS (V) DVB-T
PL (W)
DVB-T
ηD (%)
DVB-T
Gp (dB) Package
Driver BLF642 1 1400 35 32 7 33 20 SOT467C
BLF881(S) 1 1000 140 50 30 31 21 SOT467C
Final
BLF884P 470 860 350 50 70 32 20 SOT539A
BLF888A(S) 470 860 600 50 120 31 21 SOT539
BLF879P 470 860 450 42 90 31 20 SOT539A
brb339
typ. 0.5 kW
DVB-T
typ. 5 kW DVB-T
output power
TV exciter
DVB-T
Driver stages
amplifiers
harmonic
filter power
monitor
8× final
65NXP Semiconductors RF Manual 15th edition
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products & technologies
2.5.6 Broadband medium power amplifiers for all 400 to 2700 MHz applications
NXP medium power MMICs BGA7xxx for broadband applications
Produced in NXP’s proven QUBiC4 Si BiCMOS process, these MMICs bring improved thermal performance
and added-value features to all 400 to 2700 MHz applications − at a lower cost than GaAs versions.
Base station
The high power level of these MMICs makes them an excellent
choice for mobile infrastructure applications. They offer the
highest gain over all base stations frequencies. The quiescent
current feature allows for high efficiency and linearity in Class AB
operation. The bias circuitry delivers stable performance over
temperature and supply variations. The integrated shutdown
function is a power-saving feature and can be used for fast
shutdown. The MMICs can be tuned for any band between
VHF and 2.7 GHz. Unbeatable thermal performance (30 °C/W)
improves overall quality and reliability.
eMetering
These MMICs are also very well suited to eMetering applications
in the 900-2400 MHz ISM band. High integration and single
supply operation mean that the MMICs can be combined with
just a few other components to create a full-featured solution.
The MMICs can be operated on battery power (with an energy
saving shutdown mode) and are tunable between Class A and
AB. They can also work on a power line network, so they support
gas metering with or without a power connection. The built-
in reliability and quality of a silicon-based process provides
longevity, as does the improved ESD performance.
Features
`ESD protection at all pins
`Single-supply operation (3.3 or 5 V)
`Integrated active biasing
`Fast shutdown
`Quiescent current adjustment
`Two package options, smallest leadless package (3 x 3 mm)
and leaded SOT-89
Applications
`Wireless infrastructure (base station, repeater)
`eMetering
`Broadband CPE (MoCA)
`Satellite Master Antenna TV (SMATV)
`Industrial applications
`W-LAN / ISM / RFID
Manufactured in NXP’s breakthrough QUBiC4 process, these
MMICs deliver RF performance comparable to that of their GaAs
equivalents, but at a lower cost and with additional features, like
thermal performance and ESD robustness. The QUBiC4 process
makes it possible to support even more features, including active
biasing, quiescent adjustment, VGA interfaces, and a power
saving shutdown mode. To increase design flexibility, all the
MMICs support single-supply (3.3/5 V) operation. And, to save
space, they are available in the smallest package size (3 x 3 mm)
and with leadless options.
Supply Shutdown control RF performance RF performance
Type Package fVcc Icc VI(D)L(SHDN) VI(D)H(SHDN) II(D)L(SHDN) Typ @ f = 940 MHz Typ @ f = 1960 MHz
Typ Typ Max Min Max Min Max Typ Gp PL(1dB) OIP3 NF Gp PL(1dB) OIP3 NF
(MHz) (V) (mA) (mA) (V) (V) (V) (V) (µA) dB dBm dBm dB dB dBm dBm dB
BGA7124 SOT908 leadless 400 - 2700 5 130 200 0 0.7 2.5 Vbias 4 22 25 38 5 16 24 38 5
BGA7024 SOT89 leaded 400 - 2700 5 110 - - - - - - 22 24 38 3 16 25 38 4
BGA7127 SOT908 leadless 400 - 2700 5 180 325 0 0.7 2.5 Vbias 4 20 28 44 3 13 28 43 5
BGA7027 SOT89 leaded 400 - 2700 5 170 - - - - - - 19 28 41 3 12 28 43 4
BGA7130* SOT908 leadless 400 - 2700 5 - - 0 0.7 2.5 Vbias 4 18 30 45 4 12 30 45 4
The specifications of the BGA7130 and BGA7133 are target specifications until development is completed.
* = check status at 3.1 new products, as this type has not been released for mass production.
66 NXP Semiconductors RF Manual 15th edition
2.6 Technology
2.6.1 Boost efficiency and operational cost in wireless infrastructure with GaN
NXP GaN technology for RF power
This new gallium-nitride (GaN) technology, the result of a collaborative development effort, enables high-
power amplifiers that deliver very high efficiency in next-generation wireless communication systems.
Features
`Power density up to five times higher than Si LDMOS
`50 V operation
`High gain
`High efficiency
`High reliability
`Low parasitics
Benefits
`High frequency combined with high power
`Broadband operation that lets a single power amplifier
function at multiple frequencies
`Enabling technology for next-generation, high power, Switch
Mode Power Amplifier (SMPA) architectures
`Lowers system costs and operational expenditures
`Ideal for tower-top base stations
Applications
`Cellular base stations
`WiMAX
`Broadcast
`Radar
Collaborating with United Monolithic Semiconductors and the
Fraunhofer Institute for Applied Solid State Physics, NXP has
developed a gallium-nitride (GaN) process technology that
boosts performance of next-generation RF power amplifiers.
The new GaN process, with its high frequency combined with
high power, puts NXP in the ideal position to support future
applications while continuing to evolve its well-established
LDMOS technology. The GaN technology delivers numerous
benefits to manufacturers of infrastructure equipment. Using
the GaN technology in a transmitter represents a significant
cost savings in system operation due to the high efficiencies
achievable, along with major improvements in system
performance and flexibility. Most of today’s base station
power amplifiers are limited to specific applications. The new
GaN-based technology creates a “universal transmitter” that
can be applied in multiple systems and frequencies. Such
universal power amplifier architecture, enabled by NXP’s GaN
technology, simplifies transmitter production and logistics. The
technology also allows operators to switch between frequency
bands to instantly meet demands in the base station’s
coverage area. GaN transistors enable much more efficient
power amplifiers and, as a result, drive down the operational
costs of telecom operators. GaN transistors can operate at
much higher junction temperatures than Si- and GaAs-based
devices, so GaN is an ideal candidate for environments with
reduced cooling capabilities, such as tower-top base stations.
Also, with its high power densities, GaN has the potential
to expand into other areas, including high power broadcast
applications, where solid-state power amplifiers built with
vacuum tubes are still the norm. NXP’s first GaN broadband
power amplifiers are expected to be available at the beginning
of 2012, with Switch Mode Power Amplifiers (SMPAs) following
in subsequent years.
Performance (targets)
Saturated output power at 50 V 100 W
Frequency 2.2 GHz
Maximum PAE 68%
Linear power gain 19 dB
2C-WCDMA linear efficiency with DPD 40% at –52 dBc IM3 at 8 dB OPBO
Assembly of GaN power bar in standard ceramic package
67NXP Semiconductors RF Manual 15th edition
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2.6.2 Looking for a leader in SiGe:C? You've just found us!
NXP QUBiC4 process technology
NXP's innovative, high performance SiGe:C QUBiC4 process lets customers implement more functions into
less space, with the added benefits of competitive cost, superb reliability, and significant manufacturing
advantages. Our state-of-the-art QUBiC4 technology and extensive IP availability speed the migration from
GaAs components to silicon by enabling cutting-edge products with best-in-class low noise performance,
linearity, power consumption, immunity to out-of-band signals, spurious performance, and output power.
QUBiC is a mature process that has been in mass production since 2002 and has had continuous performance
upgrades added ever since. The QUBiC4 process is automotive-qualified and dual-sourced in two high
volume, NXP-owned 8-inch waferfabs that provide flexible, low-cost manufacturing with high yields and very
low ppm in the field.
QUBiC4 in three variants, each having its own benefits
for specific application areas:
QUBiC4+
The QUBiC4+ BiCMOS process features 0.25 μm CMOS with
5 metal layers for integration of dense digital logic-based
smart functionality, a rich set of active and passive devices for
high frequency mixed-signal designs including thick top metal
layers for high quality inductors. The device set includes a
37 GHz fT NPNs with 3.8 V breakdown voltage (BVce0) and low
noise figure (NF < 1.1 @ 2 GHz), 7 GHz fT VPNPs, a 28 GHz high
voltage NPN with 5.9 V breakdown voltage, differential and
single-ended varicaps with Q-factor > 30, scalable inductors
with Q-factor > 20, 800 MHz FT lateral PNP’s, 0.25 μm CMOS,
137, 220 & 12 to 2000 ohm/sq. poly and active resistors,
a 270 ohm/sq. SiCr thin film resistor, a 5.7 fF/μm2 oxide
capacitor and a 5 fF/μm2 MIM capacitor, 1 to 6 fF/μm2 oxide
capacitors and various other devices including L-PNPs, isolated
NMOS, 3.3 V CMOS and RF-CMOS transistors capacitor. The
QUBiC4+ process is silicon-based and ideal for applications up
to 5 GHz (fT = 37 GHz , NF < 1.1 dB @ 1.2 GHz), as well as for
medium power amplifiers up to 33 dBm.
QUBiC4X
The QUBiC4X BiCMOS process is a SiGe:C-based extension
of the QUBiC process for high frequency mixed-signal designs
and offers a rich set of devices for QUBiC high frequency
mixed-signal designs, including a 140 GHz fT NPN with 2.5 V
breakdown voltage and very low noise figure (NF < 1.0 @ 10 GHz),
0.25 μm CMOS, a variety of resistors, a 5.7 fF/μm2 oxide capacitor,
and a 5 fF/μm2 MIM capacitor.
The QUBiC4X is ideal for applications that typically operate at
up to 30 GHz (fT = 137 GHz , NF < 0.8 dB @ 10 GHz) and ultra-
low noise applications such as LNAs and mixers.
QUBiC4Xi
The QUBiC4Xi BiCMOS process further enhances the QUBiC4X
process and offers an additional features set of devices for high
frequency mixed-signal designs, including 180 GHz fT NPNs
with 1.4 V breakdown voltage and ultra-low noise figure
(NF < 0.7 @ 10 GHz), 0.25 μm CMOS, several resistors,
a 5.7 fF/μm2 oxide capacitor and a 5 fF/μm2 MIM capacitor.
QUBiC4Xi represents the newest SiGe:C process, with
improved on fT (> 200 GHz) and even lower noise figure
(NF < 0.5 7 dB @ 10 GHz). It is ideal for applications beyond
30 GHz, such as LO generators.
68 NXP Semiconductors RF Manual 15th edition
Features QUBiC4+ QUBiC4X QUBiC4X
Release for production 2004 2006 2008
CMOS/Bipolar CMOS 0.25um, Bipolar 0.4um,
Double poly, Deep trench, Si
CMOS 0.25um, Bipolar LV 0.4um,
Double poly, Deep trench, SiGe:C
CMOS 0.25um, Bipolar LV 0.3um,
Double poly, Deep trench, SiGe:C
LV NPN fT/Fmax (GHz) 37/90 (Si) 137/180 (SiGe:C) 180/200 (SiGe:C)
HV NPN fT/Fmax (GHz) 28/70 (Si) 60/120 (SiGe:C) tbd (SiGe:C)
NPN BVce0: HV/LV ** 5.9 / 3.8 V 3.2 / 2.0 V 2.5 / 1.4 V
V-PNP fT / BVcb0 (GHz / V) 7 / >9 planned planned
CMOS Voltage /
Dual Gate
2.5 / 3.3 V 2.5 V 2.5 V
Noise figure NPN (dB) 2 GHz: 1.1 10 GHz: 0.8 10 GHz: 0.5
RFCMOS fT (GHz) NMOS 58, PMOS 19 NMOS 58, PMOS 19 NMOS 58, PMOS 19
Isolation (60 dB @ 10 GHz) STI and DTI STI and DTI STI and DTI
Interconnection
(AlCu with CMP W Plugs)
5 LM, 3 µm top Metal 5 LM, 3 µm top Metal
2 µm M4
5 LM, 3 µm top Metal
Capacitors NW, DN, Poly-Poly
5fF/um2 MIM
NW, DN, Poly-Poly
5fF/um2 MIM
NW, DN, Poly-Poly
5fF/um2 MIM
Resistors (Ω/sq) Poly (64/220/330/2K), Active (12, 57),
High Precision SiCr (270)
Poly (64/220/330/2K), Active (12, 57),
High Precision SiCr (270)
Poly (64/220/330/2K), Active (12, 57),
High Precision SiCr (270)
Varicaps (single-ended &
differential)
2x single ended, Q > 40
3x differential, Q 30-50
2x single ended, Q > 40
3x differential, Q 30-50
2x single ended, Q > 40
3x differential, Q 30-50
Inductors (1.5nH @ 2 GHz)
- scalable
Q > 21, Thick Metal, Deep trench isolation,
High R substrate
Q > 21, Thick Metal, Deep trench isolation,
High R substrate
Q > 21, Thick Metal, Deep trench isolation,
High R substrate
Other devices LPNP, Isolated NMOS Isolated-NMOS tbd LPNP, Isolated-NMOS tbd
Mask count 31 / 32 (MIM) / 33 (DG) 35 (MIM) 35 (MIM)
QUBiC4+
BiCMOS
f /f max
= 37/90 GHz
+DG
+TFR
+VPNP
+HVNPN
-4ML
SiGe:C
f / fmax
= 137/180 GHz
QUBiC4X
SiGe:C
fT
T
/
fmax
= 180/200 GHz
QUBiC4Xi
QUBiC4+
`Baseline, 0.25um CMOS, single poly, 5 metal
`Digital gate density 26k gates/mm2
`fT/fMAX= 37/90 GHz
`+TFR – Thin Film Resistor
`+DG – Dual Gate Oxide MOS
`+HVNPN – High Voltage NPN
`+VPNP – Vertical PNP (high Vearly)
`-4ML – high density 5fF/µm2 MIM capacitor
`Wide range of active and high quality passive devices
`Optimized for up to 5 GHz applications
QUBiC4X
`SiGe:C process
`fT/fMAX= 137/180 GHz
`Optimized for up to 30 GHz applications
`Transformers
QUBiC4Xi
`SiGe:C process
`Improves fT/fmax up to 180/200 GHz
`Optimized for ultra-low noise for microwave above 30 GHz
69NXP Semiconductors RF Manual 15th edition
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Function Type fmin
(MHz)
fmax
(MHz)
P1dB
(W)
Package Planned
release
Description
HPA
BLP05H6100P 1 500 100 SOT1138 Q112 Gen6 high-voltage OMP push-pull LDMOS transistor for broadcast/ISM applications
BLP05H6500P 1 500 500 SOT1138 Q411 Gen6 high-voltage OMP push-pull LDMOS transistor for broadcast/ISM applications
BLP05H650P 1 500 50 SOT1138 Q112 Gen6 high-voltage OMP push-pull LDMOS transistor for broadcast/ISM applications
BLP09H620 700 960 20 SOT1138 Q112 Gen6 high-voltage OMP LDMOS transistor for broadcast/ISM applications
BLP10H6120 700 1000 120 SOT1138 Q411 Gen6 high-voltage OMP push-pull LDMOS transistor for broadcast/ISM applications
BLP10H6120P 700 1000 120 SOT1138 Q411 Gen6 high-voltage OMP push-pull LDMOS transistor for broadcast/ISM applications
BLP10H6300P 700 1000 300 SOT1138 Q411 Gen6 high-voltage OMP push-pull LDMOS transistor for broadcast/ISM applications
BLP10H6xx 1 1000 3, 5, 10 SOT1179 Q311 Gen6 high-voltage OMP LDMOS driver transistor family for broadcast/ISM applications
BLP15M6100P 1200 1500 100 SOT1138 Q112 Gen6 OMP push-pull LDMOS transistor for broadcast/ISM applications
BLP15M630 1200 1500 30 SOT1138 Q112 Gen6 OMP LDMOS transistor for broadcast/ISM applications
BLP15M660P 1200 1500 60 SOT1138 Q411 Gen6 OMP push-pull LDMOS transistor for broadcast/ISM applications
BLP15M7150P 1200 1500 150 SOT1138 Q112 Gen7 OMP push-pull LDMOS transistor for broadcast/ISM applications
BLP15M7xx 1 1500 3, 5, 10 SOT1179 Q411 Gen7 OMP LDMOS driver transistor family for broadcast/ISM applications
BLP25M710 1 2500 10 SOT1179 Q211 Gen7 OMP LDMOS driver transistor for broadcast/ISM applications
BLP25M74 1 2500 4 SOT1179 Q311 Gen7 OMP LDMOS driver transistor for broadcast/ISM applications
BLP7G10S-140P 700 1000 140 SOT1138 Q311 Gen7 OMP LDMOS transistor for GSM & LTE applications
BLP7G10S-140PG 700 1000 140 SOT1204 Q311 Gen7 OMP LDMOS transistor for GSM & LTE applications (gull-wing)
BLP7G10S-25P 700 1000 25 SOT1138 Q411 Gen7 OMP LDMOS transistor for GSM & LTE applications
BLP7G10S-25PG 700 1000 25 SOT1204 Q411 Gen7 OMP LDMOS transistor for GSM & LTE applications (gull-wing)
BLP7G10S-45P 700 1000 45 SOT1138 Q411 Gen7 OMP LDMOS transistor for GSM & LTE applications
BLP7G10S-45PG 700 1000 45 SOT1204 Q411 Gen7 OMP LDMOS transistor for GSM & LTE applications (gull-wing)
BLP7G20S-45P 1800 2000 45 SOT1138 Q411 Gen7 OMP LDMOS transistor for GSM & LTE applications
BLP7G20S-45PG 1800 2000 45 SOT1204 Q411 Gen7 OMP LDMOS transistor for GSM & LTE applications (gull-wing)
BLP7G21S-140P 1800 2050 140 SOT1138 Q411 Gen7 OMP LDMOS transistor for TD-SCDMA applications
BLP7G21S-140PG 1800 2050 140 SOT1204 Q411 Gen7 OMP LDMOS transistor for WCDMA applications (gull-wing)
BLP7G22-10 1800 2200 10 SOT1179 Q311 Gen7 OMP LDMOS transistor for WCDMA & GSM applications
BLP7G22S-140 2000 2200 140 SOT1138 Q411 Gen7 OMP LDMOS transistor for WCDMA applications
BLP7G22S-140G 2000 2200 140 SOT1204 Q411 Gen7 OMP LDMOS transistor for WCDMA applications (gull-wing)
BLP7G22S-45P 2000 2200 45 SOT1138 Q112 Gen7 OMP LDMOS transistor for WCDMA applications
BLP7G22S-45PG 2000 2200 45 SOT1204 Q112 Gen7 OMP LDMOS transistor for WCDMA applications (gull-wing)
2.6.3 Completing NXP's RF power transistor offering: products in plastic packages (OMP)
NXP is currently developing a complete line of overmolded plastic (OMP) RF power
transistors and MMICs with peak powers ranging from 3 to 500 W. The main benefit of
plastic packages is cost effectiveness with little or no impact on performance. The range
of plastic devices will complement the extensive range of RF power products that NXP
offers in ceramic packages for all frequency ranges and applications up to 2.45 GHz.
The products in development include
`Single-stage broadband drivers in HSOP-outlines, from
3 to 10 W
`Single-stage OMP drivers from 25 to 45 W, replacing
their ceramic equivalents for cost sensitive applications
`Dual-stage MMICs from 30 to 60 W that can be used as
high-gain drivers or combined as low power dual-stage
Doherty amplifiers
`Fully integrated plug-and-play Doherty PAs in a single
package (50 to 100 W)
`Final transistors in OMP package (SOT502-sized) ranging
from 140 to 200 W in frequency bands from 730 MHz
to 2.2 GHz
`Final transistors in OMP package (SOT502-sized) ranging
from 3 to 500 W in ISM frequency bands from a few MHz up
to 2.45 GHz
Some of these products are available for sampling now, while
the rest of the portfolio will be rolled out throughout 2011.
70 NXP Semiconductors RF Manual 15th edition
3. Products by function
NXP RF product catalog:
http://www.nxp.com/rf
3.1 New products
DEV = In development
CQS = Customer qualification samples
RFS = Release for supply
Type Application / Description
Expected
status May
2011
Planned
release Chapter
NEW: Wideband transistors
BFU610F Gen6 wideband transistor RFS Released 3.3.1
BFU630F Gen6 wideband transistor RFS Released 3.3.1
BFU660F Gen6 wideband transistor RFS Released 3.3.1
BFU690F Gen6 wideband transistor RFS Released 3.3.1
BFU710F Gen7 wideband transistor RFS Released 3.3.1
BFU730F Gen7 wideband transistor RFS Released 3.3.1
BFU760F Gen7 wideband transistor RFS Released 3.3.1
BFU790F Gen7 wideband transistor RFS Released 3.3.1
NEW: AEC-Q101 qualified wideband MMICs and transistors
BGA2002 Low noise wideband amplifier MMIC RFS Released 3.4.1
BFR94A RF wideband transistor RFS Released 3.3.1
BFR94AW RF wideband transistor RFS Released 3.3.1
NEW: SiGe:C LNAs (for e.g. GPS)
BGU7005 SiGe:C MMIC, incl matching output for GPS LNA, 16.5 dB RFS Released 3.4.1
BGU7007 GPS LNA, 18.5 / 19.5 dB gain RFS Released 3.4.1
BGU7004 GPS LNA, 16.5 / 17.5 dB gain, AEC-Q100 RFS Released 3.4.1
BGU7008 GPS LNA, 18.5 / 19.5 dB gain, AEC-Q100 RFS Released 3.4.1
BGU7003W General-purpose unmatched LNA for FM radio CQS Q2 2011 3.4.1
NEW: LNAs for set-up boxes
BGU7042 LNA for STB tuning RFS Released 3.4.1
BGU7041 LNA for STB tuning RFS Released 3.4.1
NEW: General purpose wideband amplifiers (50 Ω gain blocks)
BGA2802 IF gain block 25 dB RFS Released 3.4.1
BGA2803 IF gain block 23.4 dB RFS Released 3.4.1
BGA2870 IF gain block 31 dB RFS Released 3.4.1
NEW: Medium power amplifier MMICs
BGA7124 Medium power amplifier, 24 dBm P1dB, leadless SOT908 RFS Released 3.4.1
BGA7024 Medium power amplifier, 24 dBm P1dB, leaded SOT89 RFS Released 3.4.1
BGA7127 Medium power amplifier, 27 dBm P1dB, leadless SOT908 RFS Released 3.4.1
BGA7027 Medium power amplifier, 27 dBm P1dB, leaded SOT89 RFS Released 3.4.1
BGA7130 Medium power amplifier, 30 dBm P1dB, leadless SOT908 DEV Q4 2011 3.4.1
NEW: VGAs for wireless infrastructures
BGA7350 Dual IF VGA, control range 24 dB RFS Released 3.4.1
BGA7351 Dual IF VGA , control range 28 dB CQS Q3 2011 3.4.1
BGA7202 Tx RF VGA, 0.7 - 2.2 GHz CQS Q3 2011 3.4.1
BGA7204 Tx RF VGA, 0.7 - 2.8 GHz CQS Q3 2011 3.4.1
NEW: LNAs for wireless infrastructures
BGU7051 LNA 900 MHz CQS Q2 2011 3.4.1
BGU7052 LNA 1.9 GHz CQS Q2 2011 3.4.1
BGU7053 LNA 2.5 GHz CQS Q2 2011 3.4.1
New: LO generators for wireless infrastructures
BGX7300 Rx LO generator, 400 MHz to 3 GHz DEV Q4 2011 3.4.2
New: IQ modulators for wireless infrastructures
BGX7100 IQ modulator, OIP3 30 dB, NF 165 dBm/Hz, P < 1 W, 350 MHz DEV Q4 2011 3.4.2
NEW: Dual mixers for wireless infrastructures
BGX7220 Dual mixer , NF 8 dB, IIP3 30 dBm, P < 1 W, 700 MHz to 1.2 GHz DEV Q4 2011 3.4.2
BGX7221 Dual mixer , NF 8 dB, IIP3 30 dBm, P < 1 W, 1.7G Hz to 2.7 GHz DEV Q4 2011 3.4.2
71NXP Semiconductors RF Manual 15th edition
Products by function
Type Application / Description
Expected
status May
2011
Planned
release Chapter
NEW: Low noise LO generators for VSAT applications
TFF1007HN Low noise LO generator for VSAT applications RFS Released 3.4.4
TFF1008HN Low noise LO generator for VSAT applications RFS Released 3.4.4
NEW: RF satellite ICs
TFF1014HN Satellite LNB downconverter IC RFS Released 3.4.3
TFF1015HN Satellite LNB downconverter IC RFS Released 3.4.3
TFF1017HN Satellite LNB downconverter IC RFS Released 3.4.3
TFF1018HN Satellite LNB downconverter IC RFS Released 3.4.3
NEW: RF CATV modules
CGY1041 1 GHz, 21 dB gain push-pull, GaAs HFET SOT115 RFS Released 3.6.2
CGY1043 1 GHz, 23 dB gain push-pull, GaAs HFET SOT115 RFS Released 3.6.2
CGY1049 1 GHz, 29 dB gain push-pull, GaAs HFET SOT115 RFS Released 3.6.2
CGY1032 1 GHz, 32 dB gain push-pull, GaAs HFET SOT115 RFS Released 3.6.2
CGD1046Hi 1 GHz, 26 dB gain power doubler, GaAs HFET SOT115 RFS Released 3.6.3
BGO807CE 870 MHz, forward path optical receiver, SOT115 RFS Released 3.6.4
CGD982HCi 1 GHz, 22 dB gain GaAs high output power doubler RFS Released 3.6.3
CGD985HCi 1 GHz, 25 dB gain GaAs high output power doubler RFS Released 3.6.3
CGD987HCi 1 GHz, 27 dB gain GaAs high output power doubler RFS Released 3.6.3
NEW: RF high-speed data converters
ADC1613D series Dual 16-bit ADC up to 65/80/105/125 Msps RFS Released 3.8.1
ADC1613S series Single 16-bit ADC up to 65/80/105/125 Msps RFS Released 3.8.1
ADC1610S series Single 16-bit ADC up to 65/80/105/125 Msps RFS Released 3.8.1
ADC1415S series Single 14-bit ADC up to 65/80/105/125 Msps RFS Released 3.8.1
ADC1413D series Dual 14-bit ADC up to 65/80/105/125 Msps RFS Released 3.8.1
ADC1413S series Single 14-bit ADC up to 65/80/105/125 Msps RFS Released 3.8.1
ADC1412D series Dual 14-bit ADC up to 65/80/105/125 Msps RFS Released 3.8.1
ADC1410S series Single 14-bit ADC up to 65/80/105/125 Msps RFS Released 3.8.1
ADC1215S series Single 12-bit ADC up to 65/80/105/125 Msps RFS Released 3.8.1
ADC1213D series Dual 12-bit ADC up to 65/80/105/125 Msps RFS Released 3.8.1
ADC1213S series Single 12-bit ADC up to 65/80/105/125 Msps RFS Released 3.8.1
ADC1212D series Dual 12-bit ADC up to 65/80/105/125 Msps RFS Released 3.8.1
ADC1210S series Single 12-bit ADC up to 65/80/105/125 Msps RFS Released 3.8.1
ADC1207S080 Single 12-bit ADC 80 Msps RFS Released 3.8.1
ADC1206S series Single 12-bit ADC up to 40/55/70 Msps RFS Released 3.8.1
ADC1115S125 Single 11-bit ADC up to 125 Msps RFS Released 3.8.1
ADC1113D125 Dual 11-bit ADC up to 125 Msps RFS Released 3.8.1
ADC1113S125 Single 11-bit ADC up to 125 Msps RFS Released 3.8.1
ADC1112D125 Dual 11-bit ADC up to 125 Msps RFS Released 3.8.1
ADC1015S series Single 10-bit ADC up to 65/80/105/125 Msps RFS Released 3.8.1
ADC1010S series Single 10-bit ADC up to 65/80/105/125 Msps RFS Released 3.8.1
ADC1006S series Single 10-bit ADC up to 55/70 Msps RFS Released 3.8.1
ADC1005S060 Single 10-bit ADC 60 Msps RFS Released 3.8.1
ADC1004S series Single 10-bit ADC 30/40/50 Msps RFS Released 3.8.1
ADC1003S series Single 10-bit ADC 30/40/50 Msps RFS Released 3.8.1
ADC1002S020 Single 10-bit ADC 20 Msps RFS Released 3.8.1
ADC0808S series Single 8-bit ADC up to 125/250 Msps RFS Released 3.8.1
ADC0804S series Single 8-bit ADC up to 30/40/50 Msps RFS Released 3.8.1
ADC0801S040 Single 8-bit ADC 40 Msps RFS Released 3.8.1
DAC1408D series Dual 14-bit DAC up to 650/750 Msps RFS Released 3.8.2
DAC1405D series Dual 14-bit DAC up to 650/750 Msps RFS Released 3.8.2
DAC1403D160 Dual 14-bit DAC 160 Msps RFS Released 3.8.2
DAC1401D125 Dual 14-bit DAC 125 Msps RFS Released 3.8.2
DAC1208D series Dual 12-bit DAC up to 650/750 Msps RFS Released 3.8.2
DAC1205D series Dual 12-bit DAC up to 650/750 Msps RFS Released 3.8.2
DAC1203D160 Dual 12-bit DAC 160 Msps RFS Released 3.8.2
DAC1201D125 Dual 12-bit DAC 125 Msps RFS Released 3.8.2
DAC1008D series Dual 10-bit DAC up to 650/750 Msps RFS Released 3.8.2
DAC1005D series Dual 10-bit DAC up to 650/750 Msps RFS Released 3.8.2
DAC1003D160 Dual 10-bit DAC 160 Msps RFS Released 3.8.2
DAC1001D125 Dual 10-bit DAC 125 Msps RFS Released 3.8.2
NEW: RF power transistors
BLF6G22LS-40P Gen6 ceramic push-pull driver/final LDMOS transistor for WCDMA & LTE applications DEV Q311 3.7.1.4
BLF6G27LS-40P Gen6 ceramic push-pull driver/final LDMOS transistor for LTE applications DEV Q311 3.7.1.5
BLF7G10LS-250 Gen7 ceramic LDMOS transistor for GSM & LTE applications DEV Q311 3.7.1.1
BLF7G21LS-160P Gen7 ceramic push-pull LDMOS transistor for TD-SCDMA applications DEV Q311 3.7.1.4
BLF7G22LS-100P Gen7 ceramic push-pull LDMOS transistor for WCDMA applications DEV Q411 3.7.1.4
BLF7G22LS-160 Gen7 ceramic LDMOS transistor for WCDMA applications DEV Q311 3.7.1.4
BLF7G24LS-160P Gen7 ceramic push-pull LDMOS transistor for LTE applications DEV Q311 3.7.1.5
BLF7G27LS-200P Gen7 ceramic push-pull LDMOS transistor for LTE applications DEV Q311 3.7.1.5
BLF7G38LS-90P Gen7 ceramic push-pull LDMOS transistor for WiMAX applications DEV Q112 3.7.1.6
BLF8G10LS-160 Gen8 ceramic LDMOS transistor for GSM & LTE applications DEV Q311 3.7.1.1
BLF8G10LS-300P Gen8 ceramic push-pull LDMOS transistor for GSM & LTE applications DEV Q112 3.7.1.1
BLM7G22S-60PG Gen7 LDMOS MMIC for WCDMA applications (gull-wing) DEV Q411 3.7.1.4
BLP7G10S-140PG Gen7 OMP LDMOS transistor for GSM & LTE applications (gull-wing) DEV Q311 3.7.1.1
BLP7G22-10 Gen7 OMP LDMOS transistor for WCDMA & GSM applications DEV Q311 3.7.1.4
72 NXP Semiconductors RF Manual 15th edition
Type Application / Description
Expected
status May
2011
Planned
release Chapter
NEW: RF power broadcast and ISM transistors
BLF178P ceramic push-pull LDMOS transistor for FM broadcast applications DEV Q211 3.7.2.1
BLF572P ceramic push-pull LDMOS transistor for VHF/UHF broadcast applications DEV Q112 3.7.2.1
BLF573P ceramic push-pull LDMOS transistor for VHF/UHF broadcast applications DEV Q411 3.7.2.1
BLF642 ceramic LDMOS driver transistor for broadcast/ISM applications DEV Q211 3.7.2.1
BLF647P ceramic push-pull LDMOS transistor for VHF/UHF broadcast applications DEV Q411 3.7.2.1
BLF278XR extremely rugged ceramic push-pull transistor for broadcast/ISM applications DEV Q311 3.7.2.1
BLF578XR extremely rugged ceramic push-pull LDMOS transistor for broadcast/ISM applications DEV Q311 3.7.2.1
BLF879P Gen6 ceramic push-pull LDMOS transistor for broadcast applications DEV Q111 3.7.2.2
BLF884P Gen6 ceramic push-pull LDMOS transistor for broadcast applications DEV Q311 3.7.2.2
BLF888A Gen6 ceramic push-pull LDMOS transistor for broadcast/ISM applcations CQS now 3.7.2.2
BLP05H6100P Gen6 high-voltage OMP push-pull LDMOS transistor for broadcast/ISM applications DEV Q112 3.7.2.1
BLP05H6500P Gen6 high-voltage OMP push-pull LDMOS transistor for broadcast/ISM applications DEV Q411 3.7.2.1
BLP05H650P Gen6 high-voltage OMP push-pull LDMOS transistor for broadcast/ISM applications DEV Q112 3.7.2.1
BLP09H620 Gen6 high-voltage OMP LDMOS transistor for broadcast/ISM applications DEV Q112 3.7.2.1
BLP10H6120 Gen6 high-voltage OMP LDMOS transistor for broadcast/ISM applications DEV Q411 3.7.2.1
BLP10H6300P Gen6 high-voltage OMP push-pull LDMOS transistor for broadcast/ISM applications DEV Q411 3.7.2.1
BLP10H6xx Gen6 high-voltage OMP LDMOS driver transistor family for broadcast/ISM applications DEV Q311 3.7.2.1
BLF6G13LS-250P Gen6 ceramic LDMOS transistor for ISM applications DEV Q311 3.7.2.1
BLF6G15LS-500H Gen6 ceramic push-pull LDMOS transistor for digital broadcast applications DEV Q211 3.7.2.1
BLP15M6100P Gen6 OMP push-pull LDMOS transistor for broadcast/ISM applications DEV Q112 3.7.2.1
BLP15M630 Gen6 OMP LDMOS transistor for broadcast/ISM applications DEV Q112 3.7.2.1
BLP15M660P Gen6 OMP push-pull LDMOS transistor for broadcast/ISM applications DEV Q411 3.7.2.1
BLP15M7150P Gen7 OMP push-pull LDMOS transistor for broadcast/ISM applications DEV Q112 3.7.2.1
BLP15M7xx Gen7 OMP LDMOS driver transistor family for broadcast/ISM applications DEV Q411 3.7.2.1
BLP25M74 Gen7 OMP LDMOS driver transistor for broadcast/ISM applications DEV Q311 3.7.2.3
BLP25M710 Gen7 OMP LDMOS driver transistor for broadcast/ISM applications DEV Q311 3.7.2.3
BLF25M612 Gen6 ceramic LDMOS driver transistor for 2.45 GHz ISM applications DEV Q311 3.7.2.3
BLM2425M720 Gen7 LDMOS MMIC for 2.45 GHz ISM applications DEV Q411 3.7.2.3
BLP2425M8140 Gen8 OMP LDMOS transistor for 2.45 GHz ISM applications DEV Q112 3.7.2.3
BLF2425M6LS180P Gen6 ceramic push-pull LDMOS transistor for 2.45 GHz ISM applications DEV Q311 3.7.2.3
BLF2425M7LS200 Gen7 ceramic LDMOS transistor for 2.45 GHz ISM applications DEV Q311 3.7.2.3
BLF2425M7LS250P Gen7 ceramic push-pull LDMOS transistor for 2.45 GHz ISM applications DEV Q311 3.7.2.3
BLP2425M8250P Gen8 OMP push-pull LDMOS transistor for 2.45 GHz ISM applications DEV Q312 3.7.2.3
NEW: RF microwave transistors
BLA6H0912-1000 1000 W ceramic Avionics LDMOS transistor Q311 DEV 3.7.3.1
BLA6G1011LS-200RG Gull-wing ceramic Avionics LDMOS transistor Q211 DEV 3.7.3.1
BLL6G1214L-250 Gen6 ceramic LDMOS transistor for L-band applications Q311 DEV 3.7.3.2
BLS6G2731P-200 S-band pallet using 2x Gen6 ceramic LDMOS transistors Q311 DEV 3.7.3.3
BLS6G2735LS-30 Gen6 ceramic LDMOS driver transistor for S-band radar applications Q211 DEV 3.7.3.3
BLS7G2729LS-350P Gen6 ceramic push-pull LDMOS transistor for S-band radar applications Q211 DEV 3.7.3.3
BLS7G2933S-150 Gen7 ceramic LDMOS transistor for S-bad radar applcations released RFS 3.7.3.3
BLS6G2933P-200 S-band pallet using 2x Gen6 ceramic LDMOS transistors Q211 DEV 3.7.3.3
BLS7G3135LS-350P Gen6 ceramic push-pull LDMOS transistor for S-band radar applications Q211 DEV 3.7.3.3
73NXP Semiconductors RF Manual 15th edition
Products by function
3.2 RF diodes
3.2.1 Varicap diodes
Why choose NXP’s varicap diodes:
`Reference designs for TV and radio tuning
`Direct matching process
`Small tolerances
`Short lead time
`Complete portfolio covering broad frequency range and variety in package (including leadless)
`Reliable volume supply
VCO and FM radio tuning varicap diodes
Type Package
Number
of
diodes
Confi-
guration
@ f = 1 MHz rs
typ
rs
max @ f =
Cd
min
Cd
typ
Cd
max
@ VR
=
Cd
min
Cd
typ
Cd
max
@ VR
=Cd1/
Cd2
min
Cd1/
Cd2
max
@ V1
=
@ V2
=
(pF) (pF) (pF) (V) (pF) (pF) (pF) (V) (V) (V) (Ω) (Ω) (MHz)
BB145B SOD523 1 SG 6.4 - 7.2 1 2.55 - 2.95 4 2.2 - 1 4 - 0.6 470
BB156 SOD323 1 SG 14.4 16 17.6 1 4.2 4.8 5.4 7.5 2.7 3.9 1 7.5 0.4 0.7 470
BB198 SOD523 1 SG 25 - 28.5 1 4.8 - 6.8 4 - - - - - 0.8 100
BB199 SOD523 1 SG 36.5 - 42.5 0.5 11.8 - 13.8 2 2.8 - 0.5 2 0.25 - 100
BB201 SOT23 2 CC 89 95 102 1 25.5 27.6 29.7 7.5 3.1 3.8 1 7.5 0.25 0.5 100
BB202^^ SOD523 1 SG 28.2 - 33.5 0.2 7.2 - 11.2 2.3 2.5 - 0.2 2.3 0.35 0.6 100
BB202LX^^ SOD882D 1 SG 28.2 - 33.5 0.2 7.2 - 11.2 2.3 2.5 - 0.2 2.3 0.35 - 100
BB207^ SOT23 2 CC 76 81 86 1 25.5 27.6 29.7 7.5 2.6 3.3 1 7.5 0.2 0.4 100
BB208-02^ SOD523 1 SG 19.9 - 23.2 1 4.5 - 5.4 7.5 3.7 5.2 1 7.5 0.35 0.5 100
BB208-03^ SOD323 1 SG 19.9 - 23.2 1 4.5 - 5.4 7.5 3.7 5.2 1 7.5 0.35 0.5 100
^ = Including special design for FM car radio (CREST-IC:TEF6860). Type of connection: CC: Common Cathode
^^ = Including special design for mobile phone tuner ICs. SG: Single
TV / VCR / DVD / HDD varicap diodes - UHF tuning
Type Package
@ f = 1 MHz rs
typ
rs
max @ f = @
Cd = ∆Cd/
Cd
@ V1
=
@ V2
=@
Ns
=
Cd
min
Cd
typ
Cd
max
@ VR
=Cd1/Cd2
min
Cd1/Cd2
typ
Cd1/Cd2
max
@ V1
=
@ V2
=
(pF) (pF) (pF) (V) (V) (V) (Ω) (Ω) (MHz) (pF) (V) (V)
Matched
BB149 SOD323 1.9 2.1 2.25 28 8.2 9 10 1 28 - 0.75 470 9 2 0.5 28 10
BB149A SOD323 1.951 2.1 2.225 28 8.45 9 10.9 1 28 0.6 0.75 470 9 2 1 28 10
BB179 SOD523 1.951 2.1 2.225 28 8.45 9 10.9 1 28 0.6 0.75 470 9 2 1 28 10
BB179B SOD523 1.9 2.1 2.25 28 8.45 9 10 1 28 0.6 0.75 470 9 2 1 28 10
BB179BLX SOD882D 1.9 - 2.25 28 - 9 - 1 28 0.65 - 470 9 2 1 28 10
BB179LX SOD882D 1.95 2.1 2.22 28 8.45 9 10.9 1 28 0.65 - 470 30 2 1 28 5
BB184 SOD523 1.87 2 2.13 10 6 7 - 1 10 0.65 - 470 9 2 1 10 5
BB189 SOD523 1.89 2.04 2.18 25 6.3 7.3 - 2 25 0.65 0.7 470 9 1.8 2 25 10
Unmatched
BB135 SOD323 1.7 - 2.1 28 8.9 - 12 0.5 28 - 0.75 470 9 - - - -
Bold = Highly recommended product
Varicap selection guide on www.nxp.com/varicaps
Easy-to-use parametric filters help you to choose
the right varicap for your design.
74 NXP Semiconductors RF Manual 15th edition
TV / VCR / DVD / HDD varicap diodes - VHF tuning
Type Package
@ f = 1 MHz rs
typ
rs
max @ f = @ Cd
=∆Cd/
Cd
@ V1
=
@ V2
=@ Ns
=
Cd
min
Cd
typ
Cd
max
@ VR
=Cd1/
Cd2
min
Cd1/
Cd2
typ
Cd1/
Cd2
max
@ V1
=
@ V2
=
(pF) (pF) (pF) (V) (V) (V) (Ω) (Ω) (MHz) (pF) (V) (V)
Matched
BB148 SOD323 2.4 2.6 2.75 28 14.5 15 - 1 28 - 0.9 100 12 2 0.5 28 10
BB152 SOD323 2.48 2.7 2.89 28 20.6 22 - 1 28 1 1.2 100 30 2 1 28 10
BB153 SOD323 2.361 2.6 2.754 28 13.5 15 - 1 28 0.65 0.8 100 30 2 1 28 10
BB178 SOD523 2.361 2.6 2.754 28 13.5 15 - 1 28 0.65 0.8 100 30 2 1 28 10
BB178LX SOD882D 2.36 2.6 2.75 28 13.5 15 - 1 28 0.7 - 470 30 2 1 28 5
BB182 SOD523 2.48 2.7 2.89 28 20.6 22 - 1 28 1 1.2 100 30 2 1 28 10
BB182LX SOD882D 2.48 2.7 2.89 28 - 22 - 1 28 1 - 100 30 2 1 28 10
BB187 SOD523 2.57 2.75 2.92 25 11 - - 2 25 - 0.75 470 - 2 2 25 10
BB187LX SOD882D 2.57 2.75 2.92 25 11 - - 2 25 - 0.75 470 - 2 2 25 10
Unmatched
BB131 SOD323 0.7 - 1.055 28 12 - 16 0.5 28 - 3 470 9 - - - -
BB181 SOD523 0.7 - 1.055 28 12 - 16 0.5 28 - 3 470 9 - - - -
BB181LX SOD882D 0.7 - 1.055 28 - 14 - 0.5 28 2 - 470 9 - - - -
BBY40 SOT23 4.3 - 6 25 5 - 6.5 3 25 - 0.7 200 25 - - - -
3.2.2 PIN diodes
Why choose NXP’s PIN diodes:
` Broad portfolio
` Unrivalled performance
` Short lead time
` Low series inductance
` Low insertion loss
` Low capacitance
PIN diodes : typical rD @ 1 mA ≤ 2, switching diodes
Type Package Number of
diodes Conf VR max
(V)
IF max
(mA)
@ f = 100 MHz @ f = 1 MHz
@ IF = 0.5 mA @ IF = 1 mA @ IF = 10 mA @ VR
= 0 V @ VR = 1 V @ VR = 20 V
rD
typ
(Ω)
rD
max
(Ω)
rD
typ
(Ω)
rD
max
(Ω)
rD
typ
(Ω)
rD
max
(Ω)
Cd
typ
(pF)
Cd
typ
(pF)
Cd
max
(pF)
Cd
typ
(pF)
Cd
max
(pF)
BAP65LX SOD882D 1 SG 30 100 - - 0.94 - 0.49 0.9 0.61 0.48 0.85 0.37 -
BAP65-02 SOD523 1 SG 30 100 - - 1 - 0.56 0.9 0.65 0.55 0.9 0.375 -
BAP65-03 SOD323 1 SG 30 100 - - 1 - 0.56 0.9 0.65 0.55 0.9 0.375 -
BAP65-05 SOT23 2 CC 30 100 - - 1 - 0.56 0.9 0.7 0.575 0.9 0.425 -
BAP65-05W SOT323 2 CC 30 100 - - 1 - 0.56 0.9 0.7 0.575 0.9 0.425 -
BAP63LX SOD882D 1 SG 50 100 2.3 3.3 1.87 3 1.19 1.8 0.34 0.29 - 0.24 0.3
BAP63-02 SOD523 1 SG 50 100 2.5 3.5 1.95 3 1.17 1.8 0.36 0.32 - 0.25 0.32
BAP63-03 SOD323 1 SG 50 100 2.5 3.5 1.95 3 1.17 1.8 0.4 0.35 - 0.27 0.32
BAP63-05W SOT323 2 CC 50 100 2.5 3.5 1.95 3 1.17 1.8 0.4 0.35 - 0.3 0.35
Bold = Highly recommended product
Pin diode selection guide on www.nxp.com/pindiodes
Easy-to-use parametric filters help you to choose the right
pin diode for your design.
brb407
rD (Ω)
10−1102
101
200
100
600
500
400
300
700
Cd
(fF)
0
BAP65LX BAP65LX
BAP50LX
BAP63LX
BAP63LX
BAP1321LX
BAP51LX
BAP142LX
BAP64LX
BAP1321LX BAP51LX
BAP142LX
BAP50LX
BAP64LX
BAP70-02
BAP70-02
Freq = 100 MHz, Cd @ VR = 0 V
rD @ 0.5 mA rD @ 10 mA
brb408
Insertion Loss (dB)
10−210110−1
10
15
5
20
25
Isolation
(dB)
0
BAP51LX
BAP70-20
BAP50LX
BAP64LX
BAP51LX
BAP142LX
BAP1321LX
BAP63LX
BAP65LX BAP65LX
BAP63LX
BAP1321LX
BAP142LX
BAP64LX
BAP50LX
BAP70-02
Freq = 1800 MHz, Isolation @ VR = 0 V
Insertion Loss @ 0.5 mA
Insertion Loss @ 10 mA
Look for more graphs showing the Pin diode line-up at other
frequencies on our web site: www.nxp.com/pindiodes
75NXP Semiconductors RF Manual 15th edition
Products by function
PIN diodes : typical rD @ 1 mA = 2.2 - 2.4, switching diodes
Type Package Number of
diodes Conf VR max
(V)
IF max
(mA)
@ f = 100 MHz @ f = 1 MHz
@ IF = 0.5 mA @ IF = 1 mA @ IF = 10 mA @ VR
= 0 V @ VR = 1 V @ VR = 20 V
rD
typ
(Ω)
rD
max
(Ω)
rD
typ
(Ω)
rD
max
(Ω)
rD
typ
(Ω)
rD
max
(Ω)
Cd
typ
(pF)
Cd
typ
(pF)
Cd
max
(pF)
Cd
typ
(pF)
Cd
max
(pF)
BAP55LX SOD882D 1 SG 50 100 3.3 4.5 2.2 3.3 0.8 1.2 0.28 0.23 - 0.18 0.28
BAP1321-02 SOD523 1 SG 60 100 3.4 5 2.4 3.6 1.2 1.8 0.4 0.35 0.45 0.25 0.32
BAP1321-03 SOD323 1 SG 60 100 3.4 5 2.4 3.6 1.2 1.8 0.4 0.35 0.45 0.25 0.32
BAP1321-04 SOT23 2 SR 60 100 3.4 5 2.4 3.6 1.2 1.8 0.42 0.375 0.45 0.275 0.325
BAP1321LX SOD882D 1 SG 60 100 3.3 5 2.4 3.6 1.2 1.8 0.32 0.27 0.38 0.21 0.28
BAP142LX SOD882D 1 SG 50 100 3.3 5 2.4 3.6 1 1.8 0.25 0.22 - 0.16 0.26
PIN diodes : typical rD @ 1 mA = 3.2 - 3.6, switching diodes
Type Package Number
of diodes Conf VR max
(V)
IF max
(mA)
@ f = 100 MHz @ f = 1 MHz
@ IF = 0.5 mA @ IF = 1 mA @ IF = 10 mA @ VR
= 0 V @ VR = 1 V @ VR = 20 V
rD
typ
(Ω)
rD
max
(Ω)
rD
typ
(Ω)
rD
max
(Ω)
rD
typ
(Ω)
rD
max
(Ω)
Cd
typ
(pF)
Cd
typ
(pF)
Cd
max
(pF)
Cd
typ
(pF)
Cd
max
(pF)
BAP51LX SOD882D 1 SG 60 100 4.9 9 3.2 6.5 1.4 2.5 0.3 0.22 0.4 0.17 0.3
BAP51-02 SOD523 1 SG 60 50 5.5 9 3.6 6.5 1.5 2.5 0.4 0.3 0.55 0.2 0.35
BAP51-03 SOD323 1 SG 50 50 5.5 9 3.6 6.5 1.5 2.5 0.4 0.3 0.55 0.2 0.35
BAP51-04W SOT323 2 SR 50 50 5.5 9 3.6 6.5 1.5 2.5 0.4 0.3 0.55 0.2 0.35
BAP51-05W SOT323 2 CC 50 50 5.5 9 3.6 6.5 1.5 2.5 0.4 0.3 0.55 0.2 0.35
BAP51-06W SOT323 2 CA 50 50 5.5 - 3.6 - 2 - 0.4 0.3 - 0.2 -
PIN diodes : typical rD @ 1 mA = 10, attenuator/switching diodes
Type Package Number
of diodes Conf VR max
(V)
IF max
(mA)
@ f = 100 MHz @ f = 1 MHz
@ IF = 0.5 mA @ IF = 1 mA @ IF = 10 mA @ VR =
0 V @ VR = 1 V @ VR = 20 V
rD
typ
(Ω)
rD
max
(Ω)
rD
typ
(Ω)
rD
max
(Ω)
rD
typ
(Ω)
rD
max
(Ω)
Cd
typ
(pF)
Cd
typ
(pF)
Cd
max
(pF)
Cd
typ
(pF)
Cd
max
(pF)
BAP64Q SOT753 4 SR 100 100 20 40 10 20 2 3,8 0.52 0.37 - 0.23 0.35
BAP64-02 SOD523 1 SG 175 100 20 40 10 20 2 3.8 0.48 0.35 - 0.23 0.35
BAP64-03 SOD323 1 SG 175 100 20 40 10 20 2 3.8 0.48 0.35 - 0.23 0.35
BAP64-04 SOT23 2 SR 175 100 20 40 10 20 2 3.8 0.52 0.37 - 0.23 0.35
BAP64-04W SOT323 2 SR 100 100 20 40 10 20 2 3.8 0.52 0.37 - 0.23 0.35
BAP64-05 SOT23 2 CC 175 100 20 40 10 20 2 3.8 0.52 0.37 - 0.23 0.35
BAP64-05W SOT323 2 CC 100 100 20 40 10 20 2 3.8 0.52 0.37 - 0.23 0.35
BAP64-06 SOT23 2 CA 175 100 20 40 10 20 2 3.8 0.52 0.37 - 0.23 0.35
BAP64-06W SOT323 2 CA 100 100 20 40 10 20 2 3.8 0.52 0.37 - 0.23 0.35
PIN diodes : typical rD @ 1 mA = 14 - 16, attenuator diodes
Type Package Number
of diodes Conf VR max
(V)
IF max
(mA)
@ f = 100 MHz @ f = 1 MHz
@ IF = 0.5 mA @ IF = 1 mA @ IF = 10 mA @ VR =
0 V @ VR = 1 V @ VR = 5 V
rD
typ
(Ω)
rD
max
(Ω)
rD
typ
(Ω)
rD
max
(Ω)
rD
typ
(Ω)
rD
max
(Ω)
Cd
typ
(pF)
Cd
typ
(pF)
Cd
max
(pF)
Cd
typ
(pF)
Cd
max
(pF)
BAP50-02 SOD523 1 SG 50 50 25 40 14 25 3 5 0.4 0.3 0.55 0.22 0.35
BAP50-03 SOD323 1 SG 50 50 25 40 14 25 3 5 0.4 0.3 0.55 0.2 0.35
BAP50-04 SOT23 2 SR 50 50 25 40 14 25 3 5 0.45 0.35 0.6 0.3 0.5
BAP50-04W SOT323 2 SR 50 50 25 40 14 25 3 5 0.45 0.35 0.6 0.3 0.5
BAP50-05 SOT23 2 CC 50 50 25 40 14 25 3 5 0.45 0.3 0.5 0.35 0.6
BAP50-05W SOT323 2 CC 50 50 25 40 14 25 3 5 0.45 0.35 0.6 0.3 0.5
BAP50LX SOD882D 1 SG 50 50 26 40 14 25 3 5 0.4 0.28 0.55 0.19 0.35
BAP64LX^ SOD882D 1 SG 60 100 31 50 16 26 2.6 4.4 0.48 0.34 - 0.17* 0.3*
^ = attenuator / switching diode *= @ VR = 20 V
PIN diodes : typical rD @ 1 mA = 40, attenuator diodes
Type Package Number
of diodes Conf VR max
(V)
IF max
(mA)
@ f = 100 MHz @ f = 1 MHz
@ IF = 0.5
mA @ IF = 1 mA @ IF = 10 mA @ VR
= 0 V @ VR = 1 V @ VR = 20 V
rD
typ
(Ω)
rD
max
(Ω)
rD
typ
(Ω)
rD
max
(Ω)
rD
typ
(Ω)
rD
max
(Ω)
Cd
typ
(pF)
Cd
typ
(pF)
Cd
max
(pF)
Cd
max
(pF)
Cd
typ
(pF)
BAP70Q SOT753 4 SR 50 100 77 100 40 50 5.4 7 0.6 0.43 - 0.25 0.3
BAP70-02 SOD523 1 SG 50 100 77 100 40 50 5.4 7 0.57 0.4 - 0.2 0.25
BAP70-03 SOD323 1 SG 50 100 77 100 40 50 5.4 7 0.57 0.4 - 0.2 0.25
BAP70-04W SOT323 2 SR 50 100 77 100 40 50 5.4 7 0.6 0.43 - 0.25 0.3
BAP70-05 SOT23 2 CC 50 100 77 100 40 50 5.4 7 0.6 0.43 - 0.25 0.3
BAP70AM SOT363 4 SR 50 100 77 100 40 50 5.4 7 0.57 0.4 - 0.2 0.25
Bold = highly recommended product SG = Single CC = Common Cathode
SR = Series CA = Common Anode
76 NXP Semiconductors RF Manual 15th edition
3.2.3 Band switch diodes
Why choose NXP’s band switch diodes
`Reliable volume supplier
`Short lead time
`Low series inductance
`Low insertion loss
`Low capacitance
`High reverse isolation
Type Package VR max
(V)
IF max
(mA)
rD max
(Ω)
@ IF =
(mA)
@ f =
(MHz)
Cd max
(pF)
@ VR =
(V)
@ f =
(MHz)
BA277 SOD523 35 100 0.7 2 100 1.2 6 1
BA591 SOD323 35 100 0.7 3 100 0.9 3 1
BA891 SOD523 35 100 0.7 3 100 0.9 3 1
BAT18 SOT23 35 100 0.7 5 200 1 20 1
3.2.4 Schottky diodes
Why choose NXP’s schottky diodes
`Low diode capacitance
`Low forward voltage
`Single- and triple-isolated diode
`Small package
Applications
` Digital applications:
- Ultra high-speed switching
- Clamping circuits
` RF applications:
- Diode ring mixer
- RF detector
- RF voltage doubler
Low capacitance schottky diodes
Type Package Configuration VR max.
(V)
IF max.
(mA)
VF max.
(mV)
CD max.
(pF)
BAT17 SOT23 single 4 30 450 @ IF = 1 mA 1 @ VR = 0 V
PMBD353 SOT23 dual series 4 30 450 @ IF = 1 mA 1 @ VR = 0 V
PMBD354^ SOT23 dual series 4 30 450 @ IF = 1 mA 1 @ VR = 0 V
1PS76SB17 SOD323 single 4 30 450 @ IF = 1 mA 1 @ VR = 0 V
1PS66SB17 SOT666 triple isolated 4 30 450 @ IF = 1 mA 1 @ VR = 0 V
1PS79SB17 SOD523 single 4 30 450 @ IF = 1 mA 1 @ VR = 0 V
1PS88SB82 SOT363 triple isolated 15 30 340 @ IF = 1 mA 1 @ VR = 0 V
1PS70SB82 SOT323 single 15 30 340 @ IF = 1 mA 1 @ VR = 0 V
1PS70SB84 SOT323 dual series 15 30 340 @ IF = 1 mA 1 @ VR = 0 V
1PS70SB85 SOT323 dual c.c 15 30 340 @ IF = 1 mA 1 @ VR = 0 V
1PS70SB86 SOT323 dual c.a. 15 30 340 @ IF = 1 mA 1 @ VR = 0 V
1PS66SB82 SOT666 triple isolated 15 30 340 @ IF = 1 mA 1 @ VR = 0 V
1PS10SB82 SOD882 single 15 30 340 @ IF = 1 mA 1 @ VR = 0 V
Bold = highly recommended product ^ Diodes have matched capacitance
Schottky diode selection guide on www.nxp.com/rfschottkydiodes
Easy-to-use parametric filters help you to choose the right schottky
diode for your design.
77NXP Semiconductors RF Manual 15th edition
Products by function
3.3 RF Bipolar transistors
3.3.1 Wideband transistors
Why choose NXP’s wideband transistors
`Broad portfolio (1st - 7th generation)
`Short lead time
`Smallest packages
`Volume delivery
Wideband transistors line-up per frequency
Wideband transistors
The fT-IC curve represents Transition Frequency (fT)
characteristics as a function of collector current (IC) for the six
generations of RF wideband transistors. A group of transistors
having the same collector current (IC) and similar transition
frequencies (fT) represents a curve. The curve number matches
products in the table, detailing their RF characteristics.
RF wideband transistor selection guide on
www.nxp.com/rftransistors
Easy-to-use parametric filters help you to choose the right RF wideband
transistor for your design.
Pin Description
Type (see Fig.1)
1 collector
2 base
3 emitter
4 emitter
Type/X (see Fig.1)
1 collector
2 emitter
3 base
4 emitter
Type/XR (see Fig.2)
1 collector
2 emitter
3 base
4 emitter
12
3 4
21
34
Figure 1 Figure 2
bra510
100
10
1
fT
(GHz)
0.1 0.5 1 2 5 10 20 50 100 200 500 1000
IC (mA)
0.2
(1)
(3)
(7) (9)
1st generation
2nd generation
3rd generation
4th generation
5th generation
7th generation
6th generation
(8) (10)
(18)
(15) (16)
(20) (21) (22) (23)
(29)
(37)
(35)
(39)
(41)
(38) (40)
(34)
(36)
(32)
(33)
(26) (27)
(25)
(30)
(31)
(11) (12)
(4)
(14)
(19)
78 NXP Semiconductors RF Manual 15th edition
Wideband transistors (RF small signal)
RF power transistors for portable equipment (VHF)
Type
Package
VCEO (max)
(V)
IC (max)
(mA)
Ptot (max)
(mW)
Polarity
GUM (typ)
(dB)
@ f = (MHz)
@ IC = (mA)
@ VCE = (V)
BFG10 SOT143 8 250 400 NPN 7 1900 1 3.6
BFG10/X SOT143 8 250 400 NPN 7 1900 1 3.6
BFG10W/X SOT343 10 250 400 NPN 7 1900 1 3.6
BLT50 SOT223 10 500 2000 NPN - - - -
BLT70 SOT223H 8 250 2100 NPN - - - -
BLT80 SOT223 10 250 2000 NPN - - - -
BLT81 SOT223 9.5 500 2000 NPN - - - -
RF wideband transistors generation 1 - 3
Type
Generation
Curve
Package
fT (typ) (GHz)
VCEO (max) (V)
IC (max) (mA)
Ptot (max) (mW)
Polarity
GUM (typ) (dB)
@ f = (MHz)
@ IC = (mA)
@ VCE = (V)
GUM (typ) (dB)
@ f = (MHz)
@ IC = (mA)
@ VCE = (V)
NF (typ) (dB)
@ f = (MHz)
@ IC = (mA)
@ VCE = (V)
NF (typ) (dB)
@ f = (MHz)
@ IC = (mA)
@ VCE = (V)
BFS17 1st 3 SOT23 1 15 25 300 NPN - - - - - - - - 4.5 500 2 5 - - - -
BFS17W 1st 3 SOT323 1.6 15 50 300 NPN - - - - - - - - 4.5 500 2 5 - - - -
BFT25 1st 1 SOT23 2.3 5 6.5 30 NPN 18 500 1 1 12 800 1 1 3.8 500 1 1 - - - -
BFG25A/X 2nd 18 SOT143B 5 5 6.5 32 NPN - - - - 18 1000 0.5 1 1.8 1000 0.5 1 - - - -
BFG25AW 2nd 18 SOT343N 5 5 6.5 500 NPN - - - - 16 2000 0.5 1 2 1000 1 1 - - - -
BFG25AW/X 2nd 18 SOT343N 5 5 6.5 500 NPN 16 1000 0.5 1 8 2000 0.5 1 2 1000 1 1 - - - -
BFG31 2nd 10 SOT223 5 -15 -100 1000 PNP 16 500 -70 -10 12 800 -70 -10 - - - - - - - -
BFG35 2nd 11 SOT223 4 18 150 1000 NPN 15 500 100 10 11 800 100 10 - - - - - - - -
BFG92A/X 2nd 7 SOT143B 5 15 25 400 NPN 16 1000 15 10 11 2000 15 10 2 1000 5 10 3 2000 5 10
BFG97 2nd 10 SOT223 5.5 15 100 1000 NPN 16 500 70 10 12 800 70 10 - - - - - - - -
BFQ149 2nd 10 SOT89 5 -15 -100 1000 PNP 12 500 -50 -10 - - - - 3.75 500 -50 -10 - - - -
BFQ18A 2nd 11 SOT89 4 18 150 1000 NPN - - - - - - - - - - - - - - - -
BFQ19 2nd 10 SOT89 5.5 15 100 1000 NPN 11.5 500 50 10 7.5 800 50 10 3.3 500 50 10 - - - -
BFR106 2nd 10 SOT23 5 15 100 500 NPN - - - - 11.5 800 30 6 3.5 800 30 6 - - - -
BFR92A 2nd 7 SOT23 5 15 25 300 NPN 14 1000 15 10 8 2000 15 10 3 2000 5 10 2.1 1000 5 10
BFR92AW 2nd 7 SOT323 5 15 25 300 NPN 14 1000 15 10 8 2000 15 10 2 1000 5 10 3 2000 5 10
BFS17A 2nd 4 SOT23 2.8 15 25 300 NPN - - - - 13.5 800 14 10 2.5 800 2 5 - - - -
BFS25A 2nd 18 SOT323 5 5 6.5 32 NPN - - - - 13 1000 0.5 1 1.8 1000 1 1 - - - -
BFT25A 2nd 18 SOT23 5 5 6.5 32 NPN - - - - 15 1000 0.5 1 1.8 1000 0.5 1 - - - -
BFT92 2nd 7 SOT23 5 -15 -25 300 PNP 18 500 -14 -10 - - - - 2.5 500 -5 -10 - - - -
BFT92W 2nd 7 SOT323 4 -15 -35 300 PNP 17 500 -15 -10 11 1000 -15 -10 2.5 500 -5 -10 3 1000 -5 -10
BFT93 2nd 9 SOT23 5 -12 -35 300 PNP 16.5 500 -30 -5 2.4 500 -10 -5 - - - -
BFT93W 2nd 9 SOT323 4 -12 -50 300 PNP 15.5 500 -30 -5 10 1000 -30 -5 2.4 500 -10 -5 3 1000 -10 -5
BFG135 3rd 16 SOT223 7 15 150 1000 NPN 16 500 100 10 12 800 100 10 - - - - - - - -
BFG198 3rd 15 SOT223 8 10 100 1000 NPN 18 500 50 8 15 800 50 8 - - - - - - - -
BFG590 3rd 22 SOT143B 5 15 200 400 NPN 13 900 80 4 7.5 2000 80 4 - - - - - - - -
BFG590/X 3rd 22 SOT143B 5 15 200 400 NPN 13 900 80 4 7.5 2000 80 4 - - - - - - - -
BFG591 3rd 22 SOT223 7 15 200 2000 NPN 13 900 70 12 7.5 2000 70 12 - - - - - - - -
BFG67 3rd 14 SOT143B 8 10 50 380 NPN 17 1000 15 8 10 2000 15 8 1.7 1000 15 8 2.5 2000 5 8
BFG67/X 3rd 14 SOT143B 8 10 50 380 NPN 17 1000 15 8 10 2000 15 8 1.7 1000 15 8 2.5 2000 5 8
BFG93A 3rd 8 SOT143B 6 12 35 300 NPN 16 1000 30 8 10 2000 30 8 1.7 1000 5 8 2.3 2000 5 8
BFG93A/X 3rd 8 SOT143B 6 12 35 300 NPN 16 1000 30 8 10 2000 30 8 1.7 1000 5 8 2.3 2000 5 8
BFG94 3rd 8 SOT223 6 12 60 700 NPN - - - - 13.5 1000 45 10 2.7 500 45 10 3 1000 45 10
BFQ591 3rd 22 SOT89 7 15 200 2250 NPN 11 900 70 12 5.5 2000 70 12 - - - - - - - -
BFQ67W 3rd 14 SOT323 8 10 50 300 NPN 13 1000 15 8 8 2000 15 8 1.3 1000 5 8 2.7 2000 15 8
BFR93A 3rd 8 SOT23 6 12 35 300 NPN 13 1000 30 8 7 2000 30 8 1.9 1000 5 8 3 2000 5 8
BFR94A^ 3rd 8 SOT23 6 12 35 300 NPN 13 1000 30 8 7 2000 30 8 1.9 1000 5 8 3 2000 5 8
BFR93AR 3rd 8 SOT23 6 12 35 300 NPN 13 1000 30 8 7 2000 30 8 1.9 1000 5 8 3 2000 5 8
BFR93AW 3rd 8 SOT323 5 12 35 300 NPN 13 1000 30 8 8 2000 30 8 1.5 1000 5 8 2.1 2000 5 8
BFR94AW^ 3rd 8 SOT323 5 12 35 300 NPN 13 1000 30 8 8 2000 30 8 1.5 1000 5 8 2.1 2000 5 8
Bold = Highly recommended product
Bold Red = New, highly recommended product
^ = AEC-Q101 qualified (some limitations apply)
79NXP Semiconductors RF Manual 15th edition
Products by function
RF wideband transistors generation 4 - 4.5
Type
Generation
Curve
Package
fT (typ) (GHz)
VCEO (max) (V)
IC (max) (mA)
Ptot (max) (mW)
Polarity
GUM (typ) (dB)
@ f = (MHz)
@ IC = (mA)
@ VCE = (V)
NF (typ) (dB)
@ f = (MHz)
@ IC = (mA)
@ VCE = (V)
NF (typ) (dB)
@ f = (MHz)
@ IC = (mA)
@ VCE = (V)
PL(1dB) (typ) (dBmW)
@ VCE = (V)
@ f = (MHz)
@ IC = (mA)
IP3 (typ) (dBm)
@ IC = (mA)
@ VCE = (V)
BFG505 4th 19 SOT143B 9 15 18 150 NPN 13 2000 5 6 1.6 900 5 6 1.9 2000 1.25 6 4 6 900 5 10 5 6
BFG505/X 4th 19 SOT143B 9 15 18 150 NPN 13 2000 5 6 1.6 900 5 6 1.9 2000 1.25 6 4 6 900 5 10 5 6
BFG505W 4th 19 SOT343N 9 15 18 500 NPN 12 2000 5 6 1.6 900 5 6 1.9 2000 1.25 6 4 6 900 5 10 5 6
BFG505W/X 4th 19 SOT343N 9 15 18 500 NPN 12 2000 5 6 1.6 900 5 6 1.9 2000 1.25 6 4 6 900 5 10 5 6
BFG505W/XR 4th 19 SOT343R 9 15 18 500 NPN 12 2000 5 6 1.6 900 5 6 1.9 2000 1.25 6 4 6 900 5 10 5 6
BFG520 4th 20 SOT143B 9 15 70 300 NPN 13 2000 20 6 1.6 900 20 6 1.9 2000 5 6 17 6 900 20 26 20 6
BFG520/X 4th 20 SOT143B 9 15 70 300 NPN 13 2000 20 6 1.6 900 20 6 1.9 2000 5 6 17 6 900 20 26 20 6
BFG520/XR 4th 20 SOT143R 9 15 70 300 NPN 13 2000 20 6 1.6 900 20 6 1.9 2000 5 6 17 6 900 20 26 20 6
BFG520W 4th 20 SOT343N 9 15 70 500 NPN 11 2000 20 6 1.1 900 5 6 1.85 2000 5 6 17 6 900 20 26 20 6
BFG520W/X 4th 20 SOT343N 9 15 70 500 NPN 11 2000 20 6 1.1 900 5 6 1.85 2000 5 6 17 6 900 20 26 20 6
BFG540 4th 21 SOT143B 9 15 120 400 NPN 11 2000 40 8 1.3 900 10 8 2.1 2000 10 8 21 8 900 40 34 40 8
BFG540/X 4th 21 SOT143B 9 15 120 400 NPN 11 2000 40 8 1.3 900 10 8 2.1 2000 10 8 21 8 900 40 34 40 8
BFG540/XR 4th 21 SOT143R 9 15 120 400 NPN 11 2000 40 8 1.3 900 10 8 2.1 2000 10 8 21 8 900 40 34 40 8
BFG540W 4th 21 SOT343N 9 15 120 500 NPN 10 2000 40 8 1.3 900 10 8 2.1 2000 10 8 21 8 900 40 34 40 8
BFG540W/X 4th 21 SOT343N 9 15 120 500 NPN 10 2000 40 8 1.3 900 10 8 2.1 2000 10 8 21 8 900 40 34 40 8
BFG540W/XR 4th 21 SOT343R 9 15 120 500 NPN 10 2000 40 8 1.3 900 10 8 2.1 2000 10 8 21 8 900 40 34 40 8
BFG541 4th 21 SOT223 9 15 120 650 NPN 9 2000 40 8 1.3 900 10 8 2.1 2000 10 8 21 8 900 40 34 40 8
BFM505 4th 19 SOT363A 9 8 18 500 NPN 10 2000 5 3 1.1 900 1 3 1.9 2000 5 3 - - - - - - -
BFM520 4th 20 SOT363A 9 8 70 1000 NPN 9 2000 20 3 1.2 900 5 3 1.9 2000 5 3 - - - - - - -
BFQ540 4th 21 SOT89 9 15 120 1,200 NPN - - - - 1.9 900 40 8 - - - - - - - - - - -
BFQ67 4th 14 SOT23 8 10 50 300 NPN 8 2000 15 8 1.7 1000 15 8 2.7 2000 15 8 - - - - - - -
BFR505 4th 19 SOT23 9 15 18 150 NPN 10 2000 5 6 1.2 900 5 6 1.9 2000 5 6 4 6 900 5 10 5 6
BFR505T 4th 19 SOT416 9 15 18 150 NPN 10 2000 5 6 1.2 900 1.25 6 1.9 2000 1.25 6 5 6 900 5 10 5 6
BFR520 4th 20 SOT23 9 15 70 300 NPN 9 2000 20 6 1.1 900 5 6 1.9 2000 5 6 17 6 900 20 26 20 6
BFR520T 4th 20 SOT416 9 15 70 150 NPN 9 2000 20 6 1.1 900 5 6 1.9 2000 5 6 17 6 900 20 26 20 6
BFR540 4th 21 SOT23 9 15 120 500 NPN 7 2000 40 8 1.3 900 10 8 2.1 2000 10 8 21 8 900 40 34 40 8
BFS505 4th 19 SOT323 9 15 18 150 NPN 10 2000 5 6 1.2 900 1.25 6 1.9 2000 1.25 6 4 6 900 5 10 5 6
BFS520 4th 20 SOT323 9 15 70 300 NPN 9 2000 20 6 1.1 900 5 6 1.9 2000 5 6 17 6 900 20 26 20 6
BFS540 4th 21 SOT323 9 15 120 500 NPN 8 2000 40 8 1.3 900 10 8 2.1 2000 10 8 21 8 900 40 34 40 8
PBR941 4th 20 SOT23 8 10 50 360 NPN 9.5 2000 15 6 1.4 1000 5 6 2 2000 5 6 - - - - - - -
PBR951 4th 21 SOT23 8 10 100 365 NPN 8 2000 30 6 1.3 1000 5 6 2 2000 5 6 - - - - - - -
PRF947 4th 20 SOT323 8.5 10 50 250 NPN 10 2000 15 6 1.5 1000 5 6 2.1 2000 5 6 - - - - - - -
PRF949 4th 20 SOT416 9 10 50 150 NPN 10 2000 15 6 1.5 1000 5 6 2.1 2000 5 6 - - - - - - -
PRF957 4th 21 SOT323 8.5 10 100 270 NPN 9.2 2000 30 6 1.3 1000 5 6 1.8 2000 5 6 - - - - - - -
BFG310/XR 4.5 30 SOT143R 14 6 10 60 NPN 18 1800 5 3 - - - - 1 2000 1 3 1.8 3 1800 5 8.5 5 3
BFG310W/XR 4.5 30 SOT343R 14 6 10 60 NPN 18 1800 5 3 - - - - 1 2000 1 3 1.8 3 1800 5 8.5 5 3
BFG325/XR 4.5 31 SOT143R 14 6 35 210 NPN 18.3 1800 15 3 - - - - 1.1 2000 3 3 8.7 3 1800 15 19.4 15 3
BFG325W/XR 4.5 31 SOT343R 14 6 35 210 NPN 18.3 1800 15 3 - - - - 1.1 2000 3 3 8.7 3 1800 15 19.4 15 3
RF wideband transistors generation 5 - 7
Type
Generation
Curve
Package
fT (typ) (GHz)
VCEO (max) (V)
IC (max) (mA)
Ptot (max) (mW)
Polarity
GUM (typ) (dB)
@ f = (MHz)
@ IC = (mA)
@ VCE = (V)
NF (typ) (dB)
@ f = (MHz)
@ IC = (mA)
@ VCE = (V)
NF (typ) (dB)
@ f = (MHz)
@ IC = (mA)
@ VCE = (V)
PL(1dB) (typ) (dBmW)
@ VCE = (V)
@ f = (MHz)
@ IC = (mA)
IP3 (typ) (dBm)
@ IC = (mA)
@ VCE = (V)
BFG21W 5th 32 SOT343R - 4.5 500 600 NPN 10 1900 1 3.6 - - - - - - - - - - - - - - -
BFG403W 5th 25 SOT343R 17 4.5 3.6 16 NPN 22 2000 3 2 1 900 1 2 1.6 2000 1 2 5 1 900 1 6 1 1
BFG410W 5th 26 SOT343R 22 4.5 12 54 NPN 21 2000 10 2 0.9 900 1 2 1.2 2000 1 2 5 2 2000 10 15 10 2
BFG424F 5th 27 SOT343F 25 4.5 30 135 NPN 23 2000 25 2 0.8 900 2 2 1.2 2000 2 2 12 2 2000 25 22 25 2
BFG424W 5th 27 SOT343R 25 4.5 30 135 NPN 22 2000 25 2 0.8 900 2 2 1.2 2000 2 2 12 2 2000 25 22 25 2
BFG425W 5th 27 SOT343R 25 4.5 30 135 NPN 20 2000 25 2 0.8 900 2 2 1.2 2000 2 2 12 2 2000 25 22 25 2
BFG480W 5th 29 SOT343R 21 4.5 250 360 NPN 16 2000 80 2 1.2 900 8 2 1.8 2000 8 2 20 3.6 2000 1 28 80 2
BFU610F 6th 34 SOT343F 40 5 10 50 NPN 21 5800 8 2 0.75 2400 1 2 1.4 5800 1 2 - - - - 14 8 5
BFU630F 6th 35 SOT343F 40 5 30 130 NPN 28 2400 25 2 0.58 1500 5 2 0.73 2400 5 2 - - - - 23 25 5
BFU660F 6th 36 SOT343F 40 5 70 200 NPN 28.5 1500 60 2 0.6 1500 20 2 0.75 2400 20 2 - - - - 30 60 5
BFU690F 6th 37 SOT343F 40 5 100 300 NPN 25.6 1500 90 2 0.7 1500 50 2 0.9 2400 50 2 - - - - 35 90 5
BFU710F 7th 38 SOT343F 70 2.8 10 30 NPN 16.5 12000 8 2 0.9 5800 2 2 1.7 12000 2 2 - - - - 14.5 8 2
BFU725F/N1
7th 33 SOT343F 70 2.8 40 136 NPN 18 5800 25 2 0.47 2400 5 2 0.7 5800 5 2 8 2 5800 25 19 25 2
BFU730F 7th 39 SOT343F 70 2.8 30 130 NPN 20.3 5800 25 2 0.56 2400 5 2 1 5800 5 2 - - - - 20.5 25 2
BFU760F 7th 40 SOT343F 70 2.8 70 200 NPN 25 2400 60 2 0.5 1500 20 2 0.6 2400 20 2 - - - - 23 60 2
BFU790F 7th 41 SOT343F 70 2.8 100 250 NPN 20.4 2400 90 2 0.56 1500 50 2 0.7 2400 50 2 - - - - 24 90 2
* = check status at 3.1 new products, as this type has not been released for mass production.
Bold = Highly recommended product
Bold Red = New, highly recommended product
80 NXP Semiconductors RF Manual 15th edition
3.4 RF ICs
3.4.1 RF MMIC amplifiers and mixers
Why choose NXP's RF MMIC amplifiers and mixers
`Reduced RF component count
`Easy circuit design-in
`Reduced board size
`Short time-to-market
`Broad portfolio
`Volume delivery
`Short lead time
General purpose wideband amplifiers (50 Ω)
Type Package
@ Fu(1) @ 1 GHz Gain(3) (dB) @ Limits
Vs Is @-3 dB NF Psat Gain(2) P1dB OIP3 100 2.2 2.6 3.0 Vs Is Ptot
(V) (mA) (GHz) (dB) (dBm) (dB) (dBm) (dBm) MHz GHz GHz GHz (V) (mA) (mW)
BGA2711 SOT363 5 12.6 3.6(2) 4.8 2.8 13.1 -0.7 8.3 13.0 14.1 13.8 12.7 6 20 200
BGA2748 SOT363 3 5.7 1.9 1.9(2) -2.3 21.8 -9.2 -1.9 14.8 17.6 15.0 11.9 4 15 200
BGA2771 SOT363 3 33.3 2.4 4.5 13.2(2) 21.4 12.1 21.9 20.3 20.4 17.9 15.5 4 50 200
BGA2776 SOT363 5 24.4 2.8 4.9 10.5 23.2(2) 7.2 18.6 22.4 23.2 21.8 19.3 6 34 200
BGA2709 SOT363 5 23.5 3.6 4.0 12.5 22.7 8.3 22 22.2 23.0 22.1 21.1 6 35 200
BGA2712 SOT363 5 12.3 3.2 3.9 4.8 21.3 0.2 11 20.8 21.9 21.2 19.3 6 25 200
BGM1011 SOT363 5 25.5 - 4.7 13.8 30(2) 12.2 23 25.0 37.0 32.0 28.0 6 35 200
BGM1012 SOT363 3 14.6(2) 3.6 4.8 9.7 20.1 5.6 18 19.5 20.4 19.9 18.7 4 50 200
BGM1013 SOT363 5 27.5 2.1 4.6 14.0 35.5(2) 12.0 22.7 35.2 31.8 29.7 26.1 6 35 200
BGM1014 SOT363 5 21.0(2) 2.5 4.2 12.9 32.3 11.2 20.5 30.0 34.1 30.5 26.4 6 30 200
BGA2714 SOT363 3 4.58 2.7 2.2 -3.4 20.4 -7.9 2.1 20.8 20.8 19.4 16.8 4 10 200
BGA2715 SOT363 5 4.3(2) 3.3 2.6 -4.0 21.7 -8.0 2.3 13.3 23.3 22.1 20.1 6 8 200
BGA2716 SOT363 5 15.9(2) 3.2 5.3 11.6 22.9 8.9 22.2 22.1 22.8 22.1 20.8 6 25 200
BGA2717 SOT363 5 8.0 3.2 2.3(2) 1.4 23.9 -2.6 10.0 18.6 25.1 24.0 22.1 6 15 200
Notes: (1) Upper -3 dB point, to gain at 1 GHz. (2) Optimized parameter (3) Gain = |S21|2
New general purpose wideband amplifiers (50 Ω)
Type Package
@ Fu @ 1 GHz Gain (dB) @
VsIs@-3 dB NF Gain OIP3 250 950 1550 2150
(V) (mA) (GHz) (dB) (dB) (dBm) (MHz) (MHz) (MHz) (MHz)
BGA2800 SOT363 3.3 9.7 > 3 3.4 20.2 11.5 20 20.2 20.6 20.6
BGA2801 SOT363 3.3 12.4 3 3.6 22.1 13.6 22.3 22.1 23 23.8
BGA2815 SOT363 3.3 16.4 > 3 3.4 25.4 18.2 26.2 25.4 25.5 25.8
BGA2816 SOT363 3.3 19.6 2.3 2.8 31.2 16.1 32 31.2 30.6 28.7
BGA2850 SOT363 5 7.7 > 3 3.9 23.3 8.7 22.9 23.2 23.9 24
BGA2865 SOT363 5 22.7 2.6 3.7 31.9 20.9 31.2 31.8 32.6 31.4
BGA2866 SOT363 5 15.4 > 3 3.6 23.4 17.7 23 23.3 24 24.3
BGA2802 SOT363 3.3 13 2.8 4.1 25.8 16 25 25 25 25.5
BGA2803 SOT363 3 5.8 2.8 3.6 23.5 5 23.6 23.4 23.2 23
BGA2870 SOT363 2.5 16 1.7 3.7 31 12 31 31#- -
# = Gain at 750 MHz
No output inductor necessary when using the new BGA28xx IF Gain blocks at the output stage.
General purpose low noise wideband amplifiers
Type Package
@ @ 900 MHz @1800 MHz Gain(3) (dB) @ Limits
Vs Is NF Gain IIP3 NF Gain IIP3 100 1 2.6 3.0 Vs Is Ptot
(V) (mA) (dB) (dB) (dBm) (dB) (dB) (dBm) (MHz) (GHz) (GHz) (GHz) (V) (mA) (mW)
BGA2001 SOT343R 2.5 4 1.3 22(1) -7.4 1.3 19.5(1) -4.5 20 17.1 11.6 10.7 4.5 30 135
BGA2002^ SOT343R 2.5 4 1.3 22(1) -7.4 1.3 19.5(1) -4.5 20 17.1 11.6 10.7 4.5 30 135
BGA2003 SOT343R 2.5 10(2) 1.8 24(1) -6.5 1.8 16(1) -4.8 26 18.6 11.1 10.1 4.5 30 135
BGA2011 SOT363 3 15 1.5 19(3) 10 - - - 24 14.8 8 6.5 4.5 30 135
BGA2012 SOT363 3 7 - - - 1.7 16(3) 10 22 18.2 11.6 10.5 4.5 15 70
Notes: (1) MSG (2) Adjustable bias (3) |S21|2
RF MMIC amplifiers and mixers selection guide on www.nxp.com/mmics
Easy-to-use parametric filters help you to choose the right zRF MMIC for your design.
Bold = Highly recommended product
Bold Red = New, highly recommended product
^ = AEC-Q101 qualified (some limitations apply)
81NXP Semiconductors RF Manual 15th edition
Products by function
SiGe:C LNAs (for e.g. GPS)
Type Package
Supply
voltage Supply current
@ 1.575 GHz
Insertion
power gain
Noise
figure
Input power at 1 dB gain
compression
Input third-order intercept point
f1 = 1713 MHz, f2 = 1851 MHz
Vcc Icc |s21|2 NF PI(1 dB) IP3i
(V) (mA) (dB) (dB) (dBm) (dBm)
Min Max Min Typ Max Min Typ Max Typ
Vcc =
1.8 V,
Min
Vcc =
1.8 V,
Typ
Vcc =
2.5 V,
Icc =
5 mA
Vcc =
2.85 V,
Min
Vcc =
2.85 V
,
Typ
Vcc =
1.8 V,
Min
Vcc =
1.8 V,
Typ
Vcc =
2.5 V,
Icc =
5 mA
Vcc =
2.85 V,
Min
Vcc =
2.85
V,
Typ
BGU7003 SOT891 2.2 2.85 3 - 15 16 18.3 20 0.8 - - -20 - - - - 0 - -
BGU7003W SOT886 2.2 2.85 3 - 15 16 18.3 20 0.8 - - -20 - - - - 0 - -
BGU7004^ SOT886 1.5 2.85 - 4.5 - - 16.5* - 0.9 -14 -11 - -11 -8 5 9 - 5 12
BGU7005 SOT886 1.5 2.85 - 4.5 - - 16.5* - 0.9 -14 -11 - -11 -8 5 9 - 5 12
BGU7007 SOT886 1.5 2.85 - 4.8 - - 18** - 0.9 -14 -11 - -11 -8 5 9 - 5 12
BGU7008^ SOT886 1.5 2.85 - 4.8 - - 18** - 0.9 -14 -11 - -11 -8 5 9 - 5 12
^AEC-Q101 qualified (some limitations apply) * = 16.5 dB without jammer / 17.5 dB with jammer ** = 18.5 dB without jammer / 19.5 dB with jammer
LNAs for set-top boxes (75 Ω)
Type Package
Frequency
range Mode
@Gain (1) NF PL(1dB) OIP3 FL (2) RLout RLin
VCC ICC
(MHz) (V) (mA) (dB) (dB) (dBm) (dBm) (dB) (dB) (dB)
BGU7033 SOT363 40 - 1000
GP 10 dB 5 43 10 4.5 14 29 -0.2 12 18
GP 5 dB 5 43 5 6 9 29 -0.2 12 17
Bypass 5 4 -2 2.5 10 29 -0.2 8 8
BGU7032 SOT363 40 - 1000 GP 10 dB 5 43 10 4.5 13 29 -0.2 12 18
Bypass 5 4 -2 2.5 10 29 -0.2 8 8
BGU7031 SOT363 40 - 1000 GP 10 dB 5 43 10 4.5 13 29 -0.2 12 18
BGU7041 SOT363 40 - 1000 GP 10 dB 3.3 38 10 4 12 29 -0.2 12 21
BGU7042 SOT363 40 - 1000 GP 10 dB 3.3 38 10 4 12 29 -0.2 12 21
Bypass 3.3 3 -2 2.5 - 29 -0.2 10 10
Notes: (1) Gain = Programmable gain (GP) (2) Flatness of frequency response = FL
LNAs for wireless infrastructures (50 Ω)
Type Package Vsupply (typ) @ IC = @ f = Gass (typ) NF (typ) PL(1dB) (typ) OIP3 (typ) IRL ORL
(V) (mA) (MHz) (dB) (dB) (dBm) (dBm) (dB) (dB)
BGU7051 SOT650 3.3 65 900 20.9 0.7 17.8 34 22 15.8
BGU7052 SOT650 3.3 65 1900 20.1 0.9 18 35.5 20 15
BGU7053 SOT650 3.3 65 2500 20 1 18 35 20 15
General purpose medium power amplifiers (50 Ω)
Type Package
@ @ 900 MHz @1800 MHz Gain(2) Limits
Vs (1) Is NF Gain(2) OIP3 PL 1 dB NF Gain(2) OIP3 PL(1dB) 2.5 Vs (1) Is Ptot
(V) (mA) (dB) (dB) (dBm) (dBm) (dB) (dB) (dBm) (dBm) GHz (V) (mA) (mW)
BGA6289 SOT89 4.1 84 3.5 15 31 17 3.7 13 28 15 12 6 120 480
BGA6489 SOT89 5.1 78 3.1 20 33 20 3.3 16 30 17 15 6 120 480
BGA6589 SOT89 4.8 81 3.0 22 33 21 3.3 17 32 20 15 6 120 480
Notes: (1) Device voltage without bias resistor. (2) Gain = |S21|2
General purpose medium power amplifiers for all 400 - 2700 applications (50 Ω )
supply shutdown control RF performance RF performance
Type Package fVcc Icc VI(D)L(SHDN) VI(D)H(SHDN) II(D)L(SHDN) Typ @ f = 940 MHz Typ @ f = 1960 MHz
Typ Typ Max Min Max Min Max Typ Gp PL(1dB) OIP3 NF Gp PL(1dB) OIP3 NF
(MHz) (V) (mA) (mA) (V) (V) (V) (V) (µA) (dB) (dBm) (dBm) (dB) (dB) (dBm) (dBm) (dB)
BGA7124 SOT908 leadless 400 - 2700 5 130 200 0 0.7 2.5 Vbias 4 22 25 38 5 16 24 38 5
BGA7024 SOT89 leaded 400 - 2700 5 110 - - - - - - 22 24 38 3 16 25 38 4
BGA7127 SOT908 leadless 400 - 2700 5 180 325 0 0.7 2.5 Vbias 4 20 28 44 3 13 28 43 5
BGA7027 SOT89 leaded 400 - 2700 5 170 - - - - - - 19 28 41 3 12 28 43 4
BGA7130* SOT908 leadless 400 - 2700 5 - - 0 0.7 2.5 Vbias 4 18 30 45 4 12 30 45 4
* = check status at 3.1 new products, as this type has not been released for mass production.
Bold = Highly recommended product
Bold Red = New, highly recommended product
82 NXP Semiconductors RF Manual 15th edition
VGAs for wireless infrastructures
Type Package Control interface Vsup Isup frequency Gain
range
@ minimum attenuation @ maximum attenuation
Gain OIP3 NF Gain OIP3 NF
(V) (mA) (MHz) (dB) (dB) (dBm) (dB) (dB) (dBm) (dB)
BGA7202 SOT617 Analog 5 710 700 … 1450 23 23 41 7 0 30 30
1450 … 2200 23 23 41 7 0 30 30
BGA7204 SOT617 Parallel, serial 5 160
700 … 2750 31.5 24 37 6.5 -7.5 19 38
1450 … 2100 30.5 17 36 6.5 -13.5 10 38
2100 … 2750 29.5 16 34 7.5 -13.5 10 38
BGA7350 SOT617 Parallel, digital 5 240 50 … 250 24 18.5 44 6 -5.5 50 30
BGA7351 28 22 45 6 -6 50 34
BGA7350 and BGA7351 are dual, independently controlled, receive IF VGAs on one chip.
Low noise LO generator for wireless infrastructures
Type Package
fIN(REF) VCC ICC Noise 1 MHz offset
@5.3 GHz
Output buffer
(Po)
Typ Typ Typ Typ
(MHz) (V) (mA) (dBc/Hz) (dBm)
BGX7300* SOT617 10-160 3.3 140 -131 0 -10
IQ modulator for wireless infrastructures Output Voltage gain
Type Package
Bandwidth of
IQ modulator
VCC ICC NFL (Output noise floor) OIP3 GV
(MHz) (V) (mA) (dBm/Hz) (dBm) (dB)
BGX7100* SOT616 650 5 180 -159 27 1.5
Dual mixer for wireless infrastructures
Type Package
Second order
spur rejection
(2RF-2LO)
VCC ICC Frequency
range
NFssb (small
signal
noise figure)
IIP3 Conversion gain
(dBc) (V) (mA) (GHz) (dB) (dBm) (dB)
BGX7220* SOT617 60 5 380 0.7 - 1.2 10 26 7.5
BGX7221* SOT617 60 5 380 1.7 - 2.7 10 26 8.5
* = check status at 3.1 new products, as this type has not been released for mass production.
3.4.3 Satellite LNB RF ICs
3.4.2 Wireless infrastructure ICs
Type Package Input freq
range
Vcc I Gconv NF OIP3 LO Freq Integrated Phase noise
density (degrees RMS)
(V) (mA) (dB) (dB) (dB) (GHz)
TFF1014HN SOT763-1 10.7 - 12.75 5 52 36 7 13 9.75 / 10.6 1.5
TFF1015HN SOT763-1 10.7 - 12.75 5 52 39 7 13 9.75 / 10.6 1.5
TFF1017HN SOT763-1 10.7 - 12.75 5 52 42 7 13 9.75 / 10.6 1.5
TFF1018HN SOT763-1 10.7 - 12.75 5 52 45 7 13 9.75 / 10.6 1.5
Bold Red = New, highly recommended product
2-stage variable gain linear amplifier
Type Package
@ Frequency
Range
@ 900 MHz @1900 MHz Limits
Vs Is Gain(1) DG(2) P1dB ACPR Gain(1) DG(2) P1dB ACPR Vs Is Ptot
(V) (mA) (dB) (dB) (dBm) (dBc) (dB) (dB) (dBm) (dBc) (V) (mA) (mW)
BGA2031/1 SOT363 3 51 800-2500 24 62 11 49 23 56 13 49 3.3 77 200
Notes: (1) Gain = GP, power gain. (2) DG = Gain control range
Wideband linear mixer
Type Package
@ RF Input IF Output @ 880 MHz @1900 MHz Limits
Vs Is Frequency
Range
Frequency
Range
NF Gain(1) OIP3 NF Gain(1) OIP3 Vs Is Ptot
(V) (mA) (dB) (dB) (dBm) (dB) (dB) (dBm) (V) (mA) (mW)
BGA2022 SOT363 3 6 800 - 2500 50 - 500 9 5 4 9 6 10 4 10 40
Notes: (1) Gain = GP, power gain. (2) DG = Gain control range
83NXP Semiconductors RF Manual 15th edition
Products by function
3.5 RF MOS transistors
3.5.1 JFETs
Why choose NXP’s JFETs
`Reliable volume supplier
`Short lead time
`Broad portfolio
JFET selection guide on www.nxp.com/rffets
Easy-to-use parametric filters help you to choose the right junction
field effect transistor for your design.
3.4.4 Low noise LO generators for VSAT and general microwave applications
Why choose NXP’s low noise LO generators
`Lowest total cost of ownership
`Alignment-free concept
`Easy circuit design-in
`Improved LO stability
Low noise LO generators for VSAT applications
Type Package
fIN(REF) VCC ICC PLL phase noise @ N=64,
@100 kHz
PLL Output buffer Input
fo(RF) Po RLout(RF) Si
Typ Typ Max Typ Max Min
(MHz) (V) (mA) (dBc/Hz) (GHz) (dBm) (dB) (dBm)
TFF1003HN SOT616 50 - 815 3.3 100 -92 12.8 - 13.05 -5 -10 -10
TFF1007HN SOT616 230.46 - 234.38 3.3 100 -104 14.62 - 15 -3 -10 -10
TFF1008HN SOT616 220.91 - 225.2 3.3 130 -104 14.1 - 14.4 -3 -10 -10
Low noise LO generators for general microwave applications
Type Package
fIN(REF) VCC ICC
PLL phase noise @
N=64
PLL Output buffer Input
Frequency
band
fo(RF) Po RLout(RF) S
i
Typ Typ @ 100 kHz @ 10 MHz Min Typ Max Typ Max Min
(MHz) (V) (mA) (dBc/Hz) (dBc/Hz) (GHz) (GHz) (GHz) (dBm) (dB) (dBm)
TFF11070HN* SOT616 27 - 448 3.3 100 -95 -131 6.84 7 7.16 -5 -10 -10 C
TFF11073HN* SOT616 28 - 468 3.3 100 -95 -131 7.16 7.33 7.49 -5 -10 -10 C
TFF11077HN* SOT616 29 - 490 3.3 100 -95 -131 7.49 7.67 7.84 -5 -10 -10 C
TFF11080HN* SOT616 31 - 513 3.3 100 -95 -131 7.84 8.02 8.21 -5 -10 -10 C. X
TFF11084HN SOT616 32 - 537 3.3 100 -95 -131 8.21 8.4 8.59 -5 -10 -10 X
TFF11088HN SOT616 34 - 562 3.3 100 -95 -131 8.59 8.79 8.99 -5 -10 -10 X
TFF11092HN SOT616 35 - 588 3.3 100 -95 -131 8.99 9.2 9.41 -5 -10 -10 X
TFF11094HN SOT616 36-600 3.3 100 -95 -131 9.00 9.4 9.6 -5 -10 -10 X
TFF11096HN SOT616 37 - 616 3.3 100 -95 -131 9.41 9.63 9.85 -5 -10 -10 X
TFF11101HN* SOT616 38 - 644 3.3 100 -95 -131 9.85 10.07 10.31 -5 -10 -10 X
TFF11105HN SOT616 40 - 674 3.3 100 -95 -131 10.31 10.54 10.79 -5 -10 -10 Ku
TFF11110HN* SOT616 42 - 706 3.3 100 -95 -131 10.79 11.03 11.29 -5 -10 -10 Ku
TFF11115HN SOT616 44 - 738 3.3 100 -95 -131 11.29 11.55 11.81 -5 -10 -10 Ku
TFF11121HN* SOT616 46 - 773 3.3 100 -95 -131 11.81 12.09 12.36 -5 -10 -10 Ku
TFF11126HN* SOT616 48 - 809 3.3 100 -95 -131 12.36 12.65 12.94 -5 -10 -10 Ku
TFF11132HN* SOT616 51 - 846 3.3 100 -95 -131 12.9 13.2 13.5 -5 -10 -10 Ku
TFF11139HN* SOT616 53 - 886 3.3 100 -95 -131 13.54 13.85 14.17 -5 -10 -10 Ka
TFF11145HN SOT616 55 - 927 3.3 100 -95 -131 14.17 14.5 14.83 -5 -10 -10 Ka
TFF11152HN SOT616 58 - 970 3.3 100 -95 -131 14.83 15.18 15.52 -5 -10 -10 Ka
Bold = Highly recommended product
Bold Red = New, highly recommended product
* = to be released on request, please consult your local NXP representative or authorized distributor
84 NXP Semiconductors RF Manual 15th edition
N-channel junction field-effect transistors for general RF applications
Type Package
VDS IG
CHARACTERISTICS
IDSS Vgsoff |Yfs| Crs
(V) (mA) (mA) (V) (mS) (pF)
max max min max min max min max min max
DC, LF and HF amplifiers
BF245A SOT54 30 10 2 6.5 < 8 3 6.5 Typ.=1.1 -
BF245B SOT54 30 10 6 15 < 8 3 6.5 Typ.=1.1 -
BF245C SOT54 30 10 12 25 < 8 3 6.5 Typ.=1.1 -
BF545A SOT23 30 10 2 6.5 0.4 7.5 3 6.5 0.8 -
BF545B SOT23 30 10 6 15 0.4 7.5 3 6.5 0.8 -
BF545C SOT23 30 10 12 25 0.4 7.5 3 6.5 0.8 -
BF556A SOT23 30 10 3 7 0.5 7.5 4.5 - 0.8 -
BF556B SOT23 30 10 6 13 0.5 7.5 4.5 - 0.8 -
BF556C SOT23 30 10 11 18 0.5 7.5 4.5 - 0.8 -
Pre-amplifiers for AM tuners in car radios
BF861A SOT23 25 10 2 6.5 0.2 1.0 12 20 2.1 2.7
BF861B SOT23 25 10 6 15 0.5 1.5 16 25 2.1 2.7
BF861C SOT23 25 10 12 25 0.8 2 20 30 2.1 2.7
BF862 SOT23 20 10 10 25 0.3 2 35 - typ=1.9 -
RF stages FM portables, car radios, main radios & mixer stages
BF510(1) SOT23 20 10 0.7 3 typ. 0.8 2.5 0.4 0.5
BF511(1) SOT23 20 10 2.5 7 typ. 1.5 4 0.4 0.5
BF512(1) SOT23 20 10 6 12 typ. 2.2 6 0.4 0.5
BF513(1) SOT23 20 10 10 18 typ. 3 7 0.4 0.5
Low-level general purpose amplifiers
BFR30 SOT23 25 5 4 10 < 5 1 4 1.5 -
BFR31 SOT23 25 5 1 5 < 2.5 1.5 4.5 1.5 -
General purpose amplifiers
BFT46 SOT23 25 5 0.2 1.5 < 1.2 > 1 1.5 -
AM input stages UHF/VHF amplifiers
PMBFJ308 SOT23 25 50 12 60 1 6.5 > 10 1.3 2.5
PMBFJ309 SOT23 25 50 12 30 1 4 > 10 1.3 2.5
PMBFJ310 SOT23 25 50 24 60 2 6.5 > 10 1.3 2.5
PMBFJ620 SOT363 25 50 24 60 2 6.5 10 1.3 2.5
Bold = Highly recommended product
(1) Asymmetrical
N-channel junction field-effect transistors for switching
Type Package
VDS IG
CHARACTERISTICS
IDSS -Vgsoff RDSON Crs ton toff
(V) (mA) (mA) (V) (Ω) (pF) (ns) (ns)
max max min max min max max min max typ max typ max
BSR56 SOT23 40 50 50 - 4 10 25 - 5 - - - 25
BSR57 SOT23 40 50 20 100 2 6 40 - 5 - - - 50
BSR58 SOT23 40 50 8 80 0.8 4 60 - 5 - - - 100
PMBFJ108 SOT23 25 50 80 - 3 10 8 - 15 4 - 6 -
PMBFJ109 SOT23 25 50 40 - 2 6 12 - 15 4 - 6 -
PMBFJ110 SOT23 25 50 10 - 0.5 4 18 - 15 4 - 6
PMBFJ111 SOT23 40 50 20 - 3 10 30 - typ.3 13 - 35 -
PMBFJ112 SOT23 40 50 5 - 1 5 50 - typ.3 13 - 35 -
PMBFJ113 SOT23 40 50 2 - 0.5 3 100 - typ.3 13 - 35 -
J108 SOT54 25 50 80 - 3 10 8 - 15 4 - 6 -
J109 SOT54 25 50 40 - 2 6 12 - 15 4 - 6 -
J110 SOT54 25 50 10 - 0.5 4 18 - 15 4 - 6
J111 SOT54 40 50 20 - 3 10 30 - typ.3 13 - 35 -
J112 SOT54 40 50 5 - 1 5 50 - typ.3 13 - 35 -
J113 SOT54 40 50 2 - 0.5 3 100 - typ.3 13 - 35 -
PMBF4391 SOT23 40 50 50 150 4 10 30 - 3.5 - 15 - 20
PMBF4392 SOT23 40 50 25 75 2 5 60 - 3.5 - 15 - 35
PMBF4393 SOT23 40 50 5 30 0.5 3 100 - 3.5 - 15 - 50
P-channel junction field-effect transistors for switching
Type Package
VDS IG
CHARACTERISTICS
IDSS -Vgsoff RDSON Crs ton toff
(V) (mA) (mA) (V) (Ω) (pF) (ns) (ns)
max max min max min max max min max typ max typ max
PMBFJ174 SOT23 30 50 20 135 5 10 85 typ.4 7 - 15 -
PMBFJ175 SOT23 30 50 7 70 3 6 125 typ.4 15 - 30 -
PMBFJ176 SOT23 30 50 2 35 1 4 250 typ.4 35 - 35 -
PMBFJ177 SOT23 30 50 1.5 20 0.8 2.25 300 typ.4 45 - 45 -
J174 SOT54 30 50 20 135 5 10 85 typ.4 7 - 15 -
J175 SOT54 30 50 7 70 3 6 125 typ.4 15 - 30 -
J176 SOT54 30 50 2 35 1 4 250 typ.4 35 - 35 -
J177 SOT54 30 50 1.5 20 0.8 2.25 300 typ.4 45 - 45 -
85NXP Semiconductors RF Manual 15th edition
Products by function
3.5.2 MOSFETs
Why choose NXP Semiconductors’ MOSFETs
`Reference designs for TV tuning
`Short lead time
`Broad portfolio
`Smallest packages
`2-in-1 FETs for tuner applications
`Reliable volume supply
`Best performance MOSFETs for TV tuning
N-channel, single MOSFETs for switching
Type Package
VDS CHARACTERISTICS
IDIDSS V(p)GS RDSON Crs ton toff |S21(on)|2|S21(off)|2MODE
(V) (mA) (mA) (V) (Ω) (pF) (ns) (ns) (dB) (dB)
max max min max min max max min max typ max typ max max min
BSS83 SOT143 10 50 - - 0.1(2) 2(1) 45 typ.0.6 - 1 - 5 - - enh.
Silicon RF Switches
BF1107 SOT23 3 10 - 100(3) - 7(4) 20 - - - - - - 2.5 30 depl.
BF11085) SOT143B 3 10 - 100(3) - 7(4) 20 - - - - - - 3 30 depl.
BF1108R5) SOT143R 3 10 - 100(3) - 7(4) 20 - - - - - - 3 30 depl.
BF1108W SOT343 3 10 - 100 - 7(4) 20 - - - - - - 3 30 depl
BF1108WR SOT343R 3 10 - 100 - 7(4) 20 - - - - - - 3 30 depl
BF1118 SOT143B 3 10 - 100 - 7(4) 22 - - - - - - 3 30 depl
BF1118R SOT143R 3 10 - 100 - 7(4) 22 - - - - - - 3 30 depl
BF1118W SOT343 3 10 - 100 - 7(4) 22 - - - - - - 3 30 depl
BF1118WR SOT343R 3 10 - 100 - 7(4) 22 - - - - - - 3 30 depl
Bold = Highly recommended product
N-channel, dual-gate MOSFETs
Type Package
VDS ID
CHARACTERISTICS
IDSX V(th)gs |Yfs| Cis Cos F @ 800 MHz VHF UHF
(V) (mA) (mA) (V) (mS) (pF) (pF) (dB)
max max min max min max min max typ typ typ
With external bias
BF908 SOT143 12 40 3 27 - -2 36 50 3.1 1.7 1.5 X X
BF908R SOT143R 12 40 3 27 - -2 36 50 3.1 1.7 1.5 X X
BF908WR SOT343R 12 40 3 27 - -2 36 50 3.1 1.7 1.5 X X
BF991 SOT143 20 20 4 25 - -2.5 10 - 2.1 1.1 1 X -
BF992 SOT143 20 40 - - - -1.3 20 - 4 2 1.2(7) X -
BF994S SOT143 20 30 4 20 - -2.5 15 - 2.5 1 1(7) X -
BF996S SOT143 20 30 4 20 - -2.5 15 - 2.3 0.8 1.8 - X
BF998 SOT143 12 30 2 18 - -2.0 21 - 2.1 1.05 1 X X
BF998R SOT143R 12 30 2 18 - -2.0 21 - 2.1 1.05 1 X X
BF998WR SOT343R 12 30 2 18 - -2.5 22 - 2.1 1.05 1 X X
Fully internal bias
BF1105 SOT143 7 30 8 16 0.3 1.2(6) 25 - 2.2(9) 1.2(8) 1.7 X X
BF1105R SOT143R 7 30 8 16 0.3 1.2(6) 25 - 2.2(9) 1.2(8) 1.7 X X
BF1105WR SOT343R 7 30 8 16 0.3 1.2(6) 25 - 2.2(9) 1.2(8) 1.7 X X
BF1109 SOT143 11 30 8 16 0.3 1.2(6) 24 - 2.2(9) 1.3(8) 1.5 X X
BF1109R SOT143R 11 30 8 16 0.3 1.2(6) 24 - 2.2(9) 1.3(8) 1.5 X X
BF1109WR SOT343R 11 30 8 16 0.3 1.2(6) 24 - 2.2(9) 1.3(8) 1.5 X X
Partly internal bias
BF904A SOT143 7 30 8 13 0.3 1(6) 22 30 2.2 1.3 2 X X
BF904AR SOT143R 7 30 8 13 0.3 1(6) 22 30 2.2 1.3 2 X X
BF904AWR SOT343R 7 30 8 13 0.3 1(6) 22 30 2.2 1.3 2 X X
BF909A SOT143 7 40 12 20 0.3 1(6) 36 50 3.6 2.3 2 X X
BF909AR SOT143R 7 40 12 20 0.3 1(6) 36 50 3.6 2.3 2 X X
BF909AWR SOT343R 7 40 12 20 0.3 1(6) 36 50 3.6 2.3 2 X X
RF MOSFET selection guide on www.nxp.com/rffets Easy-to-use parametric
filters help you to choose the right RF MOSFET for your design.
(1) Asymmetrical
(6) VGS(th)
(2) VGS(th)
(7) @ 200 MHz
(3) ID
(8) COSS
(4) VSG
(9) Cig
(5) Depletion FET
plus diode in one
package
86 NXP Semiconductors RF Manual 15th edition
N-channel, dual-gate MOSFETs
Type Package
VDS ID
CHARACTERISTICS
IDSX V(th)gs |Yfs| Cis Cos F @ 800 MHz VHF UHF
(V) (mA) (mA) (V) (mS) (pF) (pF) (dB)
max max min max min max min max typ typ typ
Partly internal bias
BF1100 SOT143 14 30 8 13 0.3 1.2(6) 24 33 2.2 1.4 2 X X
BF1100R SOT143R 14 30 8 13 0.3 1.2(6) 24 33 2.2 1.4 2 X X
BF1100WR SOT343R 14 30 8 13 0.3 1.2(6) 24 33 2.2 1.4 2 X X
BF1101 SOT143 7 30 8 16 0.3 1(6) 25 - 2.2 1.2(8) 1.7 X X
BF1101R SOT143R 7 30 8 16 0.3 1(6) 25 - 2.2 1.2(8) 1.7 X X
BF1101WR SOT343R 7 30 8 16 0.3 1(6) 25 - 2.2 1.2(8) 1.7 X X
BF1102(R)(10) SOT363 7 40 12 20 0.3 1.2(6) 36 - 2.8(9) 1.6(8) 2 X X
BF1201 SOT143 10 301) 11 19 0.3 1.2(6) 23 35 2.6 0.9 1.9 X X
BF1201R SOT143R 10 301) 11 19 0.3 1.2(6) 23 35 2.6 0.9 1.9 X X
BF1201WR SOT343R 10 301) 11 19 0.3 1.2(6) 23 35 2.6 0.9 1.9 X X
BF1202 SOT143 10 30 8 16 0.3 1.2(6) 25 40 1.7 0.85 1.1 X X
BF1202R SOT143R 10 30 8 16 0.3 1.2(6) 25 40 1.7 0.85 1.1 X X
BF1202WR SOT343R 10 30 8 16 0.3 1.2(6) 25 40 1.7 0.85 1.1 X X
BF1203(11) SOT363 10 30 11 19 0.3 1.2(6) 23 35 2.6 0.9 1.9 X -
10 30 8 16 0.3 1.2 25 40 1.7 0.85 1.1 - X
BF1204(10) SOT363 10 30 8 16 0.3 1.2(6) 25 40 1.7 0.85 1.1 X X
BF1205C(11)(12)(13) SOT363 6 30 14 24 0.3 1 26 41 2.2 0.9 1.4 X -
6 30 9 17 0.3 1 28 43 2 0.85 1.4 - X
BF1205(11)(12)(13) SOT363 10 30 8 16 0.3 1.0 26 40 1.8 0.75 1.2 X -
7 30 8 16 0.3 1.0 26 40 2.0 0.85 1.4 - X
BF1206(11) SOT363 6 30 14 23 0.3 1.0 33 48 2.4 1.1 1.6 X -
6 30 9 17 0.3 1.0 29 44 1.7 0.85 1.4 - X
BF1206F(11) SOT666 6 30 3 6.5 0.3 1.0 17 32 2.4 1.1 1.1 X -
6 30 3 6.5 0.3 1.0 17 32 1.7 0.85 1.0 - X
BF1207(11)(13)(14) SOT363 6 30 13 23 0.3 1.0 25 40 2.2 0.9 1.4 X -
6 30 9 19 0.3 1.0 26 41 1.8 0.8 1.4 - X
BF1208(11)(12)(13) SOT666 6 30 14 24 0.3 1 26 41 2.2 0.9 1.4 X -
6 30 9 17 0.3 1 28 43 2 0.85 1.4 - X
BF1208D(11)(12)(13) SOT666 6 30 14 24 0.3 1 26 41 2.1 0.8 1.1 X -
6 30 10 20 0.3 1 25 40 2.1 0.85 1.4 - X
BF1210(11)(12) SOT363 6 30 14 24 0.3 1 26 41 2.2 0.9 1.4 X -
6 30 9 17 0.3 1 28 43 2 0.85 1.4 - X
BF1211 SOT143 6 30 11 19 0.3 1.0 25 40 2.1 0.9 1.3 X -
BF1211R SOT143R 6 30 11 19 0.3 1.0 25 40 2.1 0.9 1.3 X -
BF1211WR SOT343 6 30 11 19 0.3 1.0 25 40 2.1 0.9 1.3 X -
BF1212 SOT143 6 30 8 16 0.3 1.0 28 43 1.7 0.9 1.1 - X
BF1212R SOT143R 6 30 8 16 0.3 1.0 28 43 1.7 0.9 1.1 - X
BF1212WR SOT343 6 30 8 16 0.3 1.0 28 43 1.7 0.9 1.1 - X
BF1214(10) SOT363 6 30 13 23 0.3 1.0 25 35 2.2 0.9 1.4 X X
BF1218 (11/12/13) SOT363 6 30 14 24 0.3 1 26 41 2.1 0.8 1.1 X -
6 30 10 20 0.3 1 25 40 2.1 0.85 1.4 - X
Bold = Highly recommended product
(1) Asymmetrical
(2) VGS(th) (9) Cig
(3) ID (10) Two equal dual gate MOSFETs in one package
(4) VSG (11) Two low noise gain amplifiers in one package
(5) Depletion FET plus diode in one package (12) Transistor A: fully internal bias, transistor B: partly internal bias
(7) @200 MHz (13) Internal switching function
(8) COSS (14) Transistor A: partly internal bias, transistor B: fully internal bias
N-channel, dual gate MOSFETs for set-top-boxes
Type Package
VDS ID
CHARACTERISTICS
IDSX V(th)gs |Yfs| Cis COS
F @ 800
MHz
X-Mod @ 40 dB
gain reduction
(V) (mA) (mA) (V) (mS) (pF) (pF) (dB) (dB)
max max max min max typ typ typ typ typ
BF1215 (1)(2)(3) SOT363 6 30 19.5 0.3 1 27 2.5 0.8 1.9 107
6 30 23 0.3 1 27 2.5 0.8 1.9 107
BF1216(1) SOT363 6 30 19.5 0.3 1 27 2.5 0.8 1.9 107
6 30 23 0.3 1 27 2.5 0.8 1.9 107
BF1217 SOT343 6 30 23 0.3 1 27 2.5 0.8 1.9 107
(1) Two low noise gain amplifiers in one package
(2) Transistor A: fully internal bias, transistor B: partly internal bias
(3) Internal switching function
Bold = Highly recommended product
87NXP Semiconductors RF Manual 15th edition
Products by function
3.6 RF modules
Why choose NXP’s RF Modules
`Excellent linearity, stability, and reliability
`Rugged construction
`Extremely low noise
`High power gain
`Low total cost of ownership
CATV types for Chinese (C-types) and 1 GHz GaAs HFET
line-ups
New in our CATV hybrid portfolio are two families of products.
The C-types are specially designed for the Chinese market,
customized for two major governmental projects. The GaAs
HFET family includes a complete 1 GHz line-up for high-end
applications around the world.
Both families will be extended in the following months to cover
all of the two specific market segments.
C-types (China)
`CATV push-pulls, chapter 3.6.2: BGY588C, BGE788C,
CGY888C
`CATV power doublers, chapter 3.6.3: BGD712C, CGD982HCi,
CGD985HCi, CGD987HCi
`CATV optical receivers, chapter 3.6.4: BGO807C, BGO807CE
1 GHz GaAs HFET high-end hybrids
`CATV push-pulls, chapter 3.6.2 : CGY1032, CGY1041,
CGY1043, CGY1047, CGY1049
`CATV power doublers, chapter 3.6.3: CGD1040Hi,
CGD1042Hi, CGD1044Hi, CGD1046Hi, CGD1042H,
CGD1044H
CATV module selection guide on www.nxp.com/catv
Easy-to-use parametric filters help you to choose the right
CATV module for your design.
3.6.1 CATV push-pulls
Type Frequency
range (MHz)
Gain
(dB)
Slope
(dB)
FL
(dB)
RLIN/RLOUT
(dB)
CTB
(dB)
Xmod
(dB)
CSO
(dB) @ Ch @ Vo
(dBmV)
NF @ fmax
(dB)
Itot
(mA)
BGY588C
40 - 550
33.5 - 35.5 0.2 - 1.7 0.5 16 / 16 -57 -62 77 44 8 345
BGY585A 17.7 - 18.7 0.5 - 2 0.2 20 / 20 -59 -62 -59 77 44 8 220
BGY587 21.5 - 22.5 0.2 - 1.5 0.2 20 / 20 -57 -58 -54 77 44 7 220
BGY587B 26.2 - 27.8 0.5 - 2.5 0.4 20 / 20 -57 -60 -57 77 44 6.5 340
BGY588N 34 - 35 0.5 - 1.5 0.3 20 / 20 -57 -59 -62 77 44 6 325
BGY685A 40 - 600 17.7 - 18.7 0.5 - 2.2 0.2 20 / 20 -55 -60 -56 85 44 8.5 240
BGY687 21 - 22 0.8 - 2.2 0.2 20 / 20 -54 -54 -52 85 44 6.5 240
BGY785A
40-750
18 - 19 0 - 2 0.1 20 / 20 -54.5 -57.5 -62 110 44 6 225
BGE788C 33.2 - 35.2 0.3 - 2.3 0.6 16 / 16 -49 -52 110 44 8 325
BGY787 21 - 22 0 - 1.5 0.2 20 / 20 -54.5 -54 -57.5 110 44 5 220
BGE787B 28.5 - 29.5 0.2 - 2.2 0.45 20 / 20 -48 -52 -56 110 44 6.5 340
BGY883
40 - 870
14.5 - 15.5 0 - 2 0.3 20 / 20 -61 -61 -61 49 44 8.5 235
BGE885 16.5 - 17.5 0.2 - 1.2 0.5 14 / 14 8 240
BGX885N 16.5 - 17.5 0.2 - 1.4 0.3 20 / 20 8 240
BGY885A 18 - 19 0 - 2 0.2 20 / 20 -65 -65 -67 49 44 6 225
BGY887 21 - 22 0.2 - 2 0.2 20 / 20 -64.5 -64.5 -67.5 49 44 5 220
CGY888C 34.5 - 36.5 1.5 0.25 20 / 20 -65 -72 -63 112 44 4 280
BGY835C 33.5 - 34.5 0.5 - 2.5 0.5 20 / 20 -60 -55 49 44 7 340
BGY887B 28.5 - 29.5 0.5 - 2.5 0.5 20 / 20 -60 -60 -60 49 44 6.5 340
BGY888 33.5 - 34.5 0.5 - 2.5 0.2 20 / 20 -63.5 -63 -64 49 44 5.5 325
3.6.2 CATV push-pulls 1 GHz
Type Frequency
range
Gain Slope FL RLIN/RLOUT CTB XMOD CSO @ Ch @ Vo NF @ fMAX Itot
(dB) (dB) (dBmV) (mA)
CGY1041
40 - 1003
21 - 22.5 1.2 - 2.7 0.9 20 / 18 -62 -58 -64 79 NTSC channels + 75 digital channels 44 4.3 265
CGY1043 23 - 24.5 1.2 - 2.7 0.9 20 / 18 -62 -58 -64 79 NTSC channels + 75 digital channels 44 4.2 265
CGY1047 27 - 28.5 1.5 - 2.5 0.8 20 / 18 -64 -60 -66 79 NTSC channels + 75 digital channels 44 4.5 250
CGY1049 29 - 31 0.85 - 2.35 0.85 20 / 18 -62 -58 -64 79 NTSC channels + 75 digital channels 44 4.5 265
CGY1032 32 - 34 1.05 - 2.55 0.85 20 / 18 -62 -58 -64 79 NTSC channels + 75 digital channels 44 4.4 265
BGY1085A 18 - 19 0 - 2 0.3 20 / 20 -53 -54 -56 150 40 7.5 240
Bold Red = New, highly recommended product
Bold = Highly recommended product
88 NXP Semiconductors RF Manual 15th edition
Description
`Frequency range: minimum and maximum frequency in MHz at which data are characterized (@ Ch / @ Vo)
`FL is flatness of frequency response
`The number of channels and the output voltage at which CTB, Xmod, CSO, IMD2 and IMD3 are characterized, are @ fmax
`S is minimum responsivity of optical receivers
3.6.3 CATV power doublers
Type Frequency
range (MHz)
Gain
(dB)
Slope
(dB)
FL
(dB)
RLIN/RLOUT
(dB)
CTB
(dB)
Xmod
(dB)
CSO
(dB) @ Ch @ Vo
(dBmV)
NF @ fmax
(dB)
Itot
(mA)
BGD502 40 - 550 18 - 19 0.2 - 2.2 0.3 20 / 20 -65 -68 -62 77 44 8 415
BGD702
40 - 750
18 - 19 0.2 - 2 0.2 20 / 20 -59 -64 -63 110 44 6.5 425
BGD702N 18 - 19 0.2 - 2 0.25 20 / 20 -58 -62 -58 110 44 8.5 435
BGD712 18.2 - 18.8 0.5 - 1.5 0.35 23 / 23 -62 -63 -63 112 44 7 395
BGD712C 18.2 - 18.8 0.5 - 1.5 0.35 17 / 17 -62 -63 112 44 7 410
BGD704 19.5 - 20.5 0 - 2 0.2 20 / 20 -58 -63 -61 110 44 6.5 425
BGD714 20 - 20.6 0.5 - 1.5 0.35 23 / 23 -61 -62 -62 112 44 7 395
BGD885
40 - 870
16.5 - 17.5 0.2 - 1.6 0.5 20 / 20 8 450
BGD802 18 - 19 0.2 - 2 0.2 20 / 20 -56.5 -61 -64.5 129 44 6.5 395
BGD812 18.2 - 18.8 0.4 - 1.4 0.5 25 / 23 -57 -62 -58 132 44 7.5 395
BGD804 19.5 - 20.5 0.2 - 2 0.2 20 / 20 -54 -62 -60.5 129 44 6.5 395
BGD814 19.7 - 20.3 0.5 - 1.5 0.5 25 / 24 -56 -61 -57 132 44 7.5 395
BGD816L 21.2 - 21.8 0.5 - 1.5 0.5 22 / 25 -55 -58 -56 132 44 7.5 360
CGD942C 22 - 24 1 - 2 0.5 20 / 20 -66 -66 -66 98 48 3.5 450
CGD944C 24 - 26 1 - 2 0.5 20 / 20 -66 -66 -66 98 48 3.5 450
CGD1040HI
40 - 1003
19.5 - 22 0.5 - 2 1 20 / 20 -70 -66 -76 79 58.4 5.5 440
CGD1042HI 22 - 23.5 0.5 - 2 1 20 / 20 -70 -65 -75 79 58.4 5.5 440
CGD1044HI 23.5 - 25.5 0.5 - 2 1 20 / 20 -70 -64 -75 79 58.4 5 440
CGD1046HI 26.5 - 28 0.7 - 2.2 1 20 / 20 -75 -68 -70 79 56.4 5 450
CGD1042H 22 - 24 1.5 0.5 20 / 21 -75 -67 -76 79 59 5 450
CGD1044H 24 - 26 1 0.5 20 / 21 -75 -67 -76 79 59 5 450
CGD982HCI 22 - 24 0.5 - 2 1 20 / 20 -66 -68 -69 98 48 5.5 440
CGD985HCI 23.5 - 25.5 0.5 - 2 1 20 / 20 -66 -68 -69 98 48 5 440
CGD987HCI 26 - 28 0.7 - 2 1 20 / 20 -66 -68 -66 98 48 5 440
3.6.4 CATV optical receivers
Type Frequency
range (MHz)
S
(V/W)
Slope
(dB)
FL
(dB)
RLOUT
(dB)
IMD3
(dB)
IMD2
(dB)
@ fmeasured
(MHz)
@ Pi(opt)
(mW)
NF @ fmax
(dB)
Itot
(mA) Remark
BGO807
40 - 870
800 0 - 2 1 11 -71 -55 854.5 1 8.5 205 FC and SC available
BGO807C 800 0 - 2 1 11 -71 -54 854.5 1 8.5 205 FC and SC available
BGO807CE 800 0 - 2 1 11 -69 -53 854.5 1 8.5 205 FC and SC available
BGO827 800 0 - 2 1 11 -73 -57 854.5 1 8.5 205 FC and SC available
3.6.5 CATV reverse hybrids
Type Frequency
range (MHz)
Gain
(dB)
Slope
(dB)
FL
(dB)
RLIN/RLOUT
(dB)
CTB
(dB)
Xmod
(dB)
CSO
(dB) @ Ch @ Vo
(dBmV)
NF @ fmax
(dB)
Itot
(mA)
BGY68 5 - 75 29.2 - 30.8 -0.2 - 0.5 0.2 20 / 20 -68 -60 4 50 3.5 135
BGY66B 5 - 120 24.5 - 25.5 -0.2 - 0.5 0.2 20 / 20 -66 -54 14 48 5 135
BGY67
5 - 200
21.5 - 22.5 -0.2 - 0.5 0.2 20 / 20 -67 -60 22 50 5.5 215
BGY67A 23.5 - 24.5 -0.2 - 0.5 0.2 20 / 20 -67 -59 22 50 5.5 215
BGR269 34.5 - 35.5 -0.2 - 0.6 0.5 20 / 20 -57 -50 -66 28 50 5.5 160
Bold Red = New, highly recommended product
Bold = Highly recommended product
NOTES: This table is for reference only.
For full data please refer to the latest datasheet.
For availability please check the NXP Sales office.
89NXP Semiconductors RF Manual 15th edition
Products by function
WCDMA performance
Function Type fmin
(MHz)
fmax
(MHz)
CW
P1dB (W) VDS (V) PL (W) BO (dB) ηD (%) Gp (dB) Test signal Package
Driver BLF6G21-10G 1 2200 10 28 2 11.5 31 19.3 1-C WCDMA SOT538A
MMIC driver BLM6G10-30(G) 920 960 30 28 2 11.8 11.5 29 2-C WCDMA SOT822-1
Driver/final BLF6G10L-40BRN 700 1000 40 28 2.5 12 15 23 2-C WCDMA SOT1112A
BLF6G10(S)-45 700 1000 45 28 1 16.5 8 23 2-C WCDMA SOT608B
Final
BLP7G10S-140P(G) 700 1000 140 28 32 8 32 19 2-C WCDMA SOT1204
BLF6G10(LS)-160RN 700 1000 160 32 32 7 27 22.5 2-C WCDMA SOT502
BLF8G10LS-160 700 1000 160 28 40 7 29 22 2-C WCDMA SOT502B
BLF6G10-200RN 700 1000 200 28 40 7 28.5 20 2-C WCDMA SOT502A
BLF6G10LS-200RN 688 1000 200 28 40 7 28.5 20 2-C WCDMA SOT502B
BLF7G10LS-250 920 960 250 28 60 7 30 19 2-C WCDMA SOT502B
BLF6G10L(S)-260PRN 700 1000 260 28 40 8.1 26.5 22 2-C WCDMA SOT539B
BLF8G10LS-300P 700 1000 300 28 110 7 47 16 IS95 SOT539B
WCDMA performance
Function Type fmin
(MHz)
fmax
(MHz)
CW
P1dB (W) VDS (V) PL (W) BO (dB) ηD (%) Gp (dB) Test signal Package
Driver BLF6G21-10G 1 2200 10 28 0.7 11.5 15 18.5 2-c WCDMA SOT538A
BLF6G15L-40BRN 1450 1550 40 28 2.5 12.0 13 22 2-c WCDMA SOT1112A
Final
BLF7G15LS-200 1450 1550 200 28 50 6.0 29 19.5 2-c WCDMA SOT502B
BLF6G15L-250PBRN 1450 1550 250 28 60 6.2 33 18.5 2-c WCDMA SOT1110A
BLF7G15LS-300P 1450 1550 300 28 85 5.5 31 18 2-c WCDMA SOT539B
3.6.3 CATV power doublers
Type Frequency
range (MHz)
Gain
(dB)
Slope
(dB)
FL
(dB)
RLIN/RLOUT
(dB)
CTB
(dB)
Xmod
(dB)
CSO
(dB) @ Ch @ Vo
(dBmV)
NF @ fmax
(dB)
Itot
(mA)
BGD502 40 - 550 18 - 19 0.2 - 2.2 0.3 20 / 20 -65 -68 -62 77 44 8 415
BGD702
40 - 750
18 - 19 0.2 - 2 0.2 20 / 20 -59 -64 -63 110 44 6.5 425
BGD702N 18 - 19 0.2 - 2 0.25 20 / 20 -58 -62 -58 110 44 8.5 435
BGD712 18.2 - 18.8 0.5 - 1.5 0.35 23 / 23 -62 -63 -63 112 44 7 395
BGD712C 18.2 - 18.8 0.5 - 1.5 0.35 17 / 17 -62 -63 112 44 7 410
BGD704 19.5 - 20.5 0 - 2 0.2 20 / 20 -58 -63 -61 110 44 6.5 425
BGD714 20 - 20.6 0.5 - 1.5 0.35 23 / 23 -61 -62 -62 112 44 7 395
BGD885
40 - 870
16.5 - 17.5 0.2 - 1.6 0.5 20 / 20 8 450
BGD802 18 - 19 0.2 - 2 0.2 20 / 20 -56.5 -61 -64.5 129 44 6.5 395
BGD812 18.2 - 18.8 0.4 - 1.4 0.5 25 / 23 -57 -62 -58 132 44 7.5 395
BGD804 19.5 - 20.5 0.2 - 2 0.2 20 / 20 -54 -62 -60.5 129 44 6.5 395
BGD814 19.7 - 20.3 0.5 - 1.5 0.5 25 / 24 -56 -61 -57 132 44 7.5 395
BGD816L 21.2 - 21.8 0.5 - 1.5 0.5 22 / 25 -55 -58 -56 132 44 7.5 360
CGD942C 22 - 24 1 - 2 0.5 20 / 20 -66 -66 -66 98 48 3.5 450
CGD944C 24 - 26 1 - 2 0.5 20 / 20 -66 -66 -66 98 48 3.5 450
CGD1040HI
40 - 1003
19.5 - 22 0.5 - 2 1 20 / 20 -70 -66 -76 79 58.4 5.5 440
CGD1042HI 22 - 23.5 0.5 - 2 1 20 / 20 -70 -65 -75 79 58.4 5.5 440
CGD1044HI 23.5 - 25.5 0.5 - 2 1 20 / 20 -70 -64 -75 79 58.4 5 440
CGD1046HI 26.5 - 28 0.7 - 2.2 1 20 / 20 -75 -68 -70 79 56.4 5 450
CGD1042H 22 - 24 1.5 0.5 20 / 21 -75 -67 -76 79 59 5 450
CGD1044H 24 - 26 1 0.5 20 / 21 -75 -67 -76 79 59 5 450
CGD982HCI 22 - 24 0.5 - 2 1 20 / 20 -66 -68 -69 98 48 5.5 440
CGD985HCI 23.5 - 25.5 0.5 - 2 1 20 / 20 -66 -68 -69 98 48 5 440
CGD987HCI 26 - 28 0.7 - 2 1 20 / 20 -66 -68 -66 98 48 5 440
3.6.4 CATV optical receivers
Type Frequency
range (MHz)
S
(V/W)
Slope
(dB)
FL
(dB)
RLOUT
(dB)
IMD3
(dB)
IMD2
(dB)
@ fmeasured
(MHz)
@ Pi(opt)
(mW)
NF @ fmax
(dB)
Itot
(mA) Remark
BGO807
40 - 870
800 0 - 2 1 11 -71 -55 854.5 1 8.5 205 FC and SC available
BGO807C 800 0 - 2 1 11 -71 -54 854.5 1 8.5 205 FC and SC available
BGO807CE 800 0 - 2 1 11 -69 -53 854.5 1 8.5 205 FC and SC available
BGO827 800 0 - 2 1 11 -73 -57 854.5 1 8.5 205 FC and SC available
3.6.5 CATV reverse hybrids
Type Frequency
range (MHz)
Gain
(dB)
Slope
(dB)
FL
(dB)
RLIN/RLOUT
(dB)
CTB
(dB)
Xmod
(dB)
CSO
(dB) @ Ch @ Vo
(dBmV)
NF @ fmax
(dB)
Itot
(mA)
BGY68 5 - 75 29.2 - 30.8 -0.2 - 0.5 0.2 20 / 20 -68 -60 4 50 3.5 135
BGY66B 5 - 120 24.5 - 25.5 -0.2 - 0.5 0.2 20 / 20 -66 -54 14 48 5 135
BGY67
5 - 200
21.5 - 22.5 -0.2 - 0.5 0.2 20 / 20 -67 -60 22 50 5.5 215
BGY67A 23.5 - 24.5 -0.2 - 0.5 0.2 20 / 20 -67 -59 22 50 5.5 215
BGR269 34.5 - 35.5 -0.2 - 0.6 0.5 20 / 20 -57 -50 -66 28 50 5.5 160
Bold Red = New, highly recommended product
Bold = Highly recommended product
NOTES: This table is for reference only.
For full data please refer to the latest datasheet.
For availability please check the NXP Sales office.
3.7.1 Base station transistors
http://www.nxp.com/products/mosfets/rf_power_transistors_ldmos/basestations/index.html#preview
Device naming conventions RF power base stations transistors
Why choose NXP‘s RF power transistors for base stations:
`Leading technology (generation 6, 7 and 8 of LDMOS)
`Highest efficiency
`Best ruggedness
`Advanced Doherty amplifier designs
`Industry’s first 3.8 GHz Doherty
`Industry's first 3 way, 900 MHz Doherty
`Inudstry's first 50V, 600W, single package Doherty
NXP offers complete line-ups of RF power transistors operating from 800 MHz right up to 3.8 GHz for base stations,
covering all cellular technologies (MC-GSM/EDGE, TDMA, (TD-S)CDMA, W-CDMA/UMTS) and WiMAX infrastructures.
3.7.1.1 0.7 - 1.0 GHz line-up
B L F 6 G 22 L S -45 P R B N G
gullwing-shaped leads
specialty
option: current sense lead
enhanced ruggedness
push-pull device
P1dB power
option: earless package
option: low thermal resistivity
operating frequency (in 100MHz; maximum)
G: standard LDMOS
LDMOS technology generation
F: LDMOS transistor in ceramic package
C: LDMOS transistor in air cavity plastic (ACP) package
D: fully integrated Doherty amplifier
M: MMIC
P: Plastic
L: high frequency power transistor
B: semiconductor die made of Si
B L F 6 G 22 L S -45 P R B N G
gullwing-shaped leads
specialty
option: current sense lead
enhanced ruggedness
push-pull device
P1dB power
option: earless package
option: low thermal resistivity
operating frequency (in 100MHz; maximum)
G: standard LDMOS
LDMOS technology generation
F: LDMOS transistor in ceramic package
C: LDMOS transistor in air cavity plastic (ACP) package
D: fully integrated Doherty amplifier
M: MMIC module
L: high frequency power transistor
B: semiconductor die made of Si
3.7 RF power transistors
NEW : RF power transistor selection guide on www.nxp.com/rfpower
Easy-to-use parametric filters help you to choose the right RF
power transistor for your design.
3.7.1.2 1.4 - 1.7 GHz line-up
90 NXP Semiconductors RF Manual 15th edition
Test signal performance
Function Type fmin
(MHz)
fmax
(MHz)
CW
P1dB (W) VDS (V) PL (W) BO (dB) ηD (%) Gp (dB) Test signal Package
Driver
BLF6G21-10G 1 2200 10 28 0.7 11.5 15 18.5 2-c WCDMA SOT538A
BLF6G20-40 1800 2000 40 28 2.5 12.0 15 18.8 2-c WCDMA SOT608A
BLF6G20-45 1800 2000 45 28 2.5 12.6 14 19.2 2-c WCDMA SOT608A
BLF6G20S-45 1800 2000 45 28 2.5 12.6 14 19.2 2-c WCDMA SOT608B
BLD6G21L-50 2010 2025 50 28 8 8.0 43 14.5 TD-SCDMA SOT1130A
BLD6G21LS-50 2010 2025 50 28 8 8.0 43 14.5 TD-SCDMA SOT1130B
BLF6G20-75 1800 2000 75 28 29.5 4.1 37.5 19 GSM EDGE SOT502A
BLF6G20LS-75 1800 2000 75 28 29.5 4.1 37.5 19 GSM EDGE SOT502B
Final
BLF7G20L-90P 1800 2000 90 28 84 0.3 54 19 GSM EDGE SOT1121A
BLF7G20LS-90P 1800 2000 90 28 84 0.3 54 19 GSM EDGE SOT1121B
BLF6G20-110 1800 2000 110 28 25 6.4 32 19 2-c WCDMA SOT502A
BLF6G20LS-110 1800 2000 110 28 25 6.4 32 19 2-c WCDMA SOT502B
BLF6G20LS-140 1800 2000 140 28 35.5 6.0 30 16.5 2-c WCDMA SOT502B
BLF7G20LS-140P 1800 2000 140 28 60 3.7 41 17.5 GSM EDGE SOT1121B
BLF7G21L(S)-160P 1800 2050 160 28 45 5.5 34 18 2-c WCDMA SOT1121
BLF6G20-180PN 1800 2000 180 32 50 5.6 29.5 18 2-c WCDMA SOT539A
BLF6G20-180RN 1800 2000 180 30 40 6.5 27 17.2 2-c WCDMA SOT502A
BLF6G20LS-180RN 1800 2000 180 30 40 6.5 27 17.2 2-c WCDMA SOT502B
BLF7G20L-200 1805 1990 200 28 55 5.6 33 18 2-c WCDMA SOT502A
BLF7G20LS-200 1805 1990 200 28 55 5.6 33 18 2-c WCDMA SOT502B
BLF6G20-230PRN 1805 1880 230 30 50 6.6 29.5 16.5 2-c WCDMA SOT539A
BLF6G20S-230PRN 1805 1880 230 30 50 6.6 29.5 16.5 2-c WCDMA SOT539B
BLF7G20L-250P 1805 1880 250 28 70 5.5 35 18 2-c WCDMA SOT539A
BLF7G20LS-250P 1805 1880 250 28 70 5.5 35 18 2-c WCDMA SOT539B
Test signal performance
Function Type fmin
(MHz)
fmax
(MHz)
CW
P1dB (W) VDS (V) PL (W) BO (dB) ηD (%) Gp (dB) Test signal Package
Driver
BLF6G21-10G 10 2200 10 28 0.7 11.5 15 18.5 2-c WCDMA SOT538A
BLP7G22-10 10 2200 10 28 0.7 11.5 15 17 2-c WCDMA SOT1179
BLM6G22-30 2100 2200 30 28 2 11.8 9 29.5 2-c WCDMA SOT834-1
BLM7G22S-60PG 2000 2200 60 28 3 11.5 10 29 2-c WCDMA tbd
BLF6G22L-40BN 2000 2200 40 28 2.5 12.0 16 19 2-c WCDMA SOT1112A
BLF6G22L(S)-40P 2110 2170 40 28 13.5 4.7 30 19 2-c WCDMA SOT1121B3
BLF6G22(S)-45 2000 2200 45 28 2.5 12.6 13 18.5 2-c WCDMA SOT608B
BLD6G22L(S)-50 2110 2170 50 28 8 8.0 40 14 TD-SCDMA SOT1130B
BLF6G22LS-75 2000 2200 75 28 17 6.4 30.5 18.7 2-c WCDMA SOT502B
Final
BLF7G22LS-100P 2000 2200 100 28 20 7.0 28 18 2-c WCDMA SOT1121B3
BLF6G22LS-100 2000 2200 100 28 25 6.0 29 18.5 2-c WCDMA SOT502B
BLF7G22L(S)-130 2000 2200 130 28 30 6.4 32 18.5 2-c WCDMA SOT502B
BLF7G22L(S)-160 2000 2200 160 28 43 5.7 30 18 2-c WCDMA SOT502B3
BLF6G22(LS)-180PN 2000 2200 180 32 50 5.6 27.5 17.5 2-c WCDMA SOT539B
BLF6G22(LS)-180RN 2000 2200 180 30 40 6.5 25 16 2-c WCDMA SOT502B
BLF7G22L(S)-200 2110 2170 200 28 55 5.6 31 18.5 2-c WCDMA SOT502B
BLF7G22L(S)-250P 2110 2170 250 28 70 5.5 30 17 2-c WCDMA SOT539B
Test signal performance
Function Type fmin
(MHz)
fmax
(MHz)
CW
P1dB (W) VDS (V) PL (W) BO (dB) ηD (%) Gp (dB) Test signal Package
Driver BLF7G27L(S)-75P 2300 2700 75 28 12 8.0 26 17 IS-95 SOT1121
BLF6G27LS-40P 2500 2700 40 28 20 3.0 37 17.5 1-C WCDMA SOT1121
Final
BLF7G27L(S)-90P 2500 2700 90 28 16 7.5 27.5 17.5 IS-95 SOT1121
BLF7G24L(S)-100 2300 2400 100 28 14 8.5 24 18 IS-95 SOT502
BLF7G27L(S)-100 2500 2700 100 28 25 6.0 24 17.5 IS-95 SOT502
BLF7G24L(S)-140 2300 2400 140 28 30 6.7 22 17 IS-95 SOT502
BLF7G27L(S)-140 2500 2700 140 28 20 8.5 22 17 IS-95 SOT502
BLF7G27L(S)-150P 2500 2700 150 28 30 7.0 27 16.5 IS-95 SOT539
BLF7G24LS-160P 2300 2400 160 28 30 7.3 27 16.5 IS-95 SOT1246
BLF7G27LS-200P 2600 2700 200 28 42 7.0 25 16.5 IS-95 SOT1246
Test signal performance
Function Type fmin
(MHz)
fmax
(MHz)
CW
P1dB (W) VDS (V) PL (W) BO (dB) ηD (%) Gp (dB) Test signal Package
Driver
BLF6G38-10(G) 3400 3600 10 28 2 7.0 20 14 N-CDMA SOT975
BLF6G38(LS)-25 3400 3800 25 28 4.5 7.4 24 15 N-CDMA SOT608
BLF6G38(LS)-50 3400 3800 50 28 9 7.4 23 14 N-CDMA SOT502
Final BLF6G38(LS)-100 3400 3600 100 28 18.5 7.3 21.5 13 N-CDMA SOT502
3.7.1.3 1.8 - 2.0 GHz line-up
3.7.1.4 2.0 - 2.2 GHz line-up
3.7.1.5 2.3- 2.7 GHz line-up
3.7.1.6 3.5 - 3.8 GHz line-up
91NXP Semiconductors RF Manual 15th edition
Products by function
Freq band (MHz) PPEAK
(dBm)
POUT-AVG
(dBm)
VDS
(V)
Gain
(dB)
Drain Eff.
(%) Type Main transistor Peak transistor
728-821 MHz
790-821 55.5 47 28 19 42 SYM 1/2 BLF6G10L(S)-260PRN 1/2 BLF6G10L(S)-260PRN
790-821 57.2 49.5 32 20 42 SYM BLF6G10LS-200RN BLF6G10LS-200RN
728-768 58 50 32 20.5 47 SYM BLF6G10LS-200RN BLF6G10LS-200RN
869-960 MHz
869-894 52 44 28 20 48 SYM BLF6G10S-45 BLF6G10S-45
869-894 52.7 44.5 28 15 50 3-WAY BLF6G10S-45 2x BLF6G10S-45
920-960 55.1 47.1 28 20.5 44 SYM 1/2 BLF6G10L(S)-260PRN 1/2 BLF6G10L(S)-260PRN
920-960 56.2 48 28 18.5 40 SYM BLF6G10-135RN BLF6G10-135RN
920-960 57.3 49.3 30 16 50 ASYM BLF8G10LS-160 BLF7G10LS-250
925-960 57.7 49.7 28 20.5 40 SYM / MPPM BLF6G10L(S)-260PRN BLF6G10L(S)-260PRN
869-894 58 50 32 20.5 46 SYM BLF6G10-200RN BLF6G10-200RN
925-960 58.9 50.9 32 22 47 SYM / MMPP BLF6G10L(S)-260PRN BLF6G10L(S)-260PRN
1476-1511 MHz
1526-1555 56.6 48.6 28 18.4 42 SYM BLF7G15LS-200 BLF7G15LS-200
1476-1511 58.1 49.6 28 16 42 ASYM BLF7G15LS-200 BLF7G15LS-300P
1476-1511 58.6 50.6 32 16.5 42 SYM BLF6G15LS-250PBRN BLF6G15LS-250PBRN
1805-1880 MHz (DCS)
1805-1880 52.5 44.5 28 16 44 SYM 1/2 BLF7G21LS-160P 1/2 BLF7G21LS-160P
1805-1880 55 47 32 16 38 SYM 1/2 BLF6G20-230PRN 1/2 BLF6G20-230PRN
1805-1880 55.4 47.5 31 16.3 49 ASYM BLF7G20LS-90P BLF7G21LS-160P
1805-1880 55.5 47 28 16 41 SYM 1/2 BLF7G20L(S)-250P 1/2 BLF7G20L(S)-250P
1805-1880 56.1 48.1 30 15.2 48 ASYM BLF7G20LS-90P BLF7G20LS-200
1805-1880 57.5 49.5 30 16 42 SYM BLF7G20LS-200 BLF7G20LS-200
1805-1880 57.9 50 32 15.5 37 SYM / MMPP BLF6G20-230PRN BLF6G20-230PRN
1805-1880 58.2 50 28 16 42 SYM BLF7G20LS-250P BLF7G20LS-250P
1805-1880 58.6 51 28 16 47.6 3-WAY BLF7G20LS-200 2x BLF7G20LS-200
1930-1990 MHz (PCS)
1930-1990 53 45 28 16.5 40 SYM BLF6G20-75 BLF6G20-75
1930-1990 54.3 47.4 28 16.7 48.2 SYM BLF6G20LS-110 BLF6G20LS-110
1930-1990 55.2 47.2 28 16 40 SYM 1/2 BLF7G20LS-250P 1/2 BLF7G20LS-250P
1930-1990 55.5 47.5 28 14.5 46 ASYM BLF7G20LS-90P BLF7G20LS-200
1930-1990 56 48 31 15.3 38 SYM BLF6G20LS-140 BLF6G20LS-140
1930-1990 56 48 28 14.8 45 ASYM BLF7G20LS-140P BLF7G20LS-200
1930-1990 57 49 30 17.2 41 SYM BLF7G20LS-200 BLF7G20LS-200
1930-1990 58 50 32 15.5 37 SYM BLF6G20-230PRN BLF6G20-230PRN
1930-1990 58.2 50 28 16 40 SYM BLF7G20LS-250P BLF7G20LS-250P
1930-1990 58.5 50.5 30 15.7 43 3-WAY BLF7G20LS-200 2x BLF7G20LS-200
1880-2025 MHz (TD-SCDMA)
1805-2050 52 44.5 28 15.2 41.5 SYM 1/2 BLF7G21LS-160P 1/2 BLF7G21LS-160P
2010-2025 47 39 28 14.4 41 SYM BLD6G21L(S)-50 BLD6G21L(S)-50
1880-2025 50 42 28 17 46 SYM 1/2 BLF7G20L(S)-90P 1/2 BLF7G20L(S)-90P
2010-2025 50 42 28 17.2 47.2 SYM 1/2 BLF7G20L(S)-90P 1/2 BLF7G20L(S)-90P
1880-1920 52.5 44.5 28 16 44 SYM 1/2 BLF7G21LS-160P 1/2 BLF7G21LS-160P
2110-2170 MHz (UMTS / LTE)
2110-2170 47 39 28 13 38 SYM BLD6G22L(S)-50 BLD6G22L(S)-50
2110-2170 48.5 40.5 28 17.2 46 SYM 1/2 BLF6G22L-40P 1/2 BLF6G22L-40P
2110-2170 54.7 46.5 28 16.5 43 SYM BLF6G22LS-100 BLF6G22LS-100
2110-2170 54.9 47 28 17 43 SYM BLF7G22L(S)-130 BLF7G22L(S)-130
2110-2170 55 47 28 17 43 SYM 1/2 BLF7G22LS-250P 1/2 BLF7G22LS-250P
2110-2170 55 47 28 15.5 38 SYM BLF6G22L(S)-130 BLF6G22L(S)-130
2110-2170 55.5 46.4 28 15 43 ASYM BLF7G22L(S)-130 BLF7G22L(S)-200
2110-2170 55.9 47.9 28 17.3 42 SYM BLF7G22LS-160 BLF7G22LS-160
2110-2170 56 48 28 15 48 3-WAY BLF7G22L(S)-130 2x BLF7G22L(S)-130
2110-2170 56.5 48.5 28 16.2 41 SYM BLF7G22L(S)-200 BLF7G22L(S)-200
2110-2170 57 49 32 14.5 41 ASYM BLF6G22-100 BLF6G22-180PN
2110-2170 57.2 49.2 28 16 47 3-WAY BLF7G22LS-160 2x BLF7G22L(S)-160
2110-2170 58 50 32 15 40 SYM BLF6G22-180PN BLF6G22-180PN
2110-2170 58 50 32 17.5 40 SYM BLF7G22LS-250P BLF7G22LS-250P
2300-2400 MHz (WiBRO / LTE)
2300-2400 49.5 42 28 14.6 44 SYM 1/2 BLF7G27L(S)-75P 1/2 BLF7G27L(S)-75P
2300-2400 55 47.5 28 15.2 44 ASYM BLF7G24LS-100 BLF7G24LS-140
2500-2700 MHz (WiMAX / LTE)
2570-2620 49.5 42 28 15 43 SYM 1/2 BLF7G27L(S)-75P 1/2 BLF7G27L(S)-75P
2500-2700 50 42 28 15 37.5 SYM BLF6G27-45 BLF6G27-45
2500-2700 50.3 42.3 28 14.5 39 SYM 1/2 BLF7G27LS-90P 1/2 BLF7G27LS-90P
2500-2600 52 44 28 14 40 ASYM BLF6G27-45 2x BLF6G27-45
2600-2700 52 44 28 14 40 ASYM BLF6G27-45 2x BLF6G27-45
2600-2700 52 44 28 14 40 ASYM BLF6G27-45 BLF6G27(LS)-100
2500-2700 52.5 44.5 28 14 38 SYM 1/2 BLF7G27LS-150P 1/2 BLF7G27LS-150P
2620-2690 55.2 47.2 30 15 41 ASYM BLF7G27LS-100 BLF7G27LS-140
2545-2575 55.3 47.3 28 15 41 ASYM BLF7G27LS-100 BLF7G27LS-140
3300-3800 MHz (WiMAX)
3400-3600 51 43 28 11.5 32 SYM BLF6G38-50 BLF6G38-50
3.7.1.7 Power LDMOS Doherty designs
92 NXP Semiconductors RF Manual 15th edition
3.7.2 Broadcast / ISM (industrial, scientific, medical) RF power transistors
http://www.nxp.com/products/mosfets/rf_power_transistors_ldmos/broadcast_ism/index.html#preview
Why choose NXP’s RF power transistors for broadcast / ISM applications:
NXP's leading LDMOS technologies, together with advanced package concepts, enable power amplifiers that deliver
best-in-class performance. We offer the industry’s highest power and best ruggedness for all broadcast technologies.
Our portfolio includes transistors for Ultra High Frequency (UHF), Very High Frequency (VHF) and
High Frequency (HF) applications and covers ISM frequency bands.
3.7.2.1 0-1000 MHz (UHF/VHF/HF/ISM) LDMOS line-up
Function Type fmin
(MHz)
fmax
(MHz)
P1dB
(W) ηD (%) Gp (dB) VDS (V) Test signal Package
Driver
BLP10H605 10 1000 5 65 20 50 CW SOT1179
BLP10H610 10 1000 10 65 20 50 CW SOT1179
BLP15M705 10 1500 5 57 18 32 CW SOT1179
BLP15M710 10 1500 10 57 18 32 CW SOT1179
final BLF178P 10 110 1000 75 26 50 CW SOT539
Driver
BLF571 10 500 20 70 27,5 50 CW SOT467C
BLF642 10 1400 35 63 19 32 CW SOT467C
BLF871(S) 10 1000 100 60 21 40 CW SOT467
Driver/final BLF645 10 1400 100 56 18 32 CW SOT540A
Driver BLF881(S) 10 1000 140 49 21 50 2-tone class AB SOT467
Final
BLF573(S) 10 500 300 70 27,2 50 CW SOT502B
BLF573P 10 500 500 70 26 50 CW SOT1121
BLF647P 10 1500 150 55 18 32 CW SOT1121
BLF574 10 500 600 73 27 50 CW SOT539A
BLF278XR 10 500 500 73 27 50 CW SOT1240
BLF888A(S) 470 860 600 58 20 50 pulsed class AB SOT539
BLF578 10 500 1000 75 26 50 CW SOT539A
10 500 1200 71 24 50 pulsed class AB
BLF578XR 10 500 1000 75 26 50 CW SOT539A
10 500 1200 71 24 50 pulsed class AB
3.7.2.2 UHF 470-860 MHz LDMOS line-up
Function Type fmin
(MHz)
fmax
(MHz)
P1dB
(W) ηD (%) Gp (dB) VDS (V) Test signal Package
Driver
BLF642 470 860 17,5 19 48 32 2-tone class AB SOT467C
470 860 35 19 63 32 CW
BLF871(S) 470 860 100 47 21 42 2-TONE SOT467C
470 860 24 33 22 42 DVB-T
BLF881(S) 470 860 120 49 21 50 2-tone class AB SOT467C
470 860 30 31 21 50 DVB-T
Final
BLF884P 470 860 75 33 21 50 DVB-T SOT539A
BLF878 470 860 300 32 21 42 CW SOT979A
470 860 75 32 21 42 DVB-T
BLF879P 470 860 95 32 20 42 DVB-T SOT1121
BLF888 470 860 250 46 19 50 2-TONE SOT979A
470 860 110 31 19 50 DVB-T
BLF888A(S)
470 860 250 46 19 50 2-TONE
SOT539470 860 120 31 19 50 DVB-T
470 860 600 58 20 50 pulsed class AB
3.7.2.3 2.45 GHz ISM LDMOS transistor line-up
Function Type fmin
(MHz)
fmax
(MHz)
P1dB
(W) ηD (%) Gp (dB) Test signal Package
Driver BLP25M74 10 2500 4 53 19 CW SOT1179
BLP25M710 10 2500 10 52 19 CW SOT1179
MMIC BLM2425M720 2400 2500 20 40 26,5 CW SOT1138
Final
BLP2425M8140 2400 2500 140 55 18 CW SOT1179
BLF2425M7L(S)140 2400 2500 140 55 19 CW SOT502
BLF2425M6L(S)180P 2400 2500 180 55 19 CW SOT539
BLF2425M7L(S)200 2400 2500 200 52 18,5 CW SOT502
BLF2425M7L(S)250P 2400 2500 250 50 18 CW SOT539
`Highest power
`Best ruggedness
`Best broadband performance
`Best-in-class design support
`Very low thermal resistance design for unrivalled reliability
93NXP Semiconductors RF Manual 15th edition
Products by function
3.7.3 Microwave LDMOS RF power transistors
http://www.nxp.com/products/mosfets/rf_power_transistors_ldmos/microwave_ldmos/index.html#preview
Device naming conventions RF power microwave transistors
Why choose NXP’s microwave RF power transistors
`High gain
`High efficiency
`Highest reliability
`Improved pulse droop and insertion phase
`Improved ruggedness - overdrive without risk to +5 dB
`Reduces component count and helps simplify L- and S-band radar design
`Uses non-toxic, RoHS-compliant packages
3.7.3.1 Avionics LDMOS transistors
Function Type fmin
(MHz)
fmax
(MHz)
P1dB
(W) ηD (%) Gp (dB) VDS (V) Test signal Package
Driver BLL6H0514-25 500 1400 25 50 19 50 pulsed RF SOT467C
Final
BLA6G1011-200R(G) 1030 1090 200 65 20 28 pulsed RF SOT502A
BLA6H0912-500 960 1215 500 50 17 50 pulsed RF SOT634A
BLA6H1011-600 1030 1090 600 52 19 48 pulsed RF SOT539A
BLA6H0912-1000 960 1215 1000 50 17 50 pulsed RF SOT539A
3.7.3.2 L-band LDMOS transistors
Function Type fmin
(MHz)
fmax
(MHz)
P1dB
(W) ηD (%) Gp (dB) VDS (V) Test signal Package
Driver BLL6H0514-25 500 1400 25 58 21 50 pulsed RF SOT467C
Final
BLL6H0514L(S)-130 500 1400 130 50 17 50 pulsed RF SOT1135B
BLL6H1214L(S)-250 1200 1400 250 55 17 50 pulsed RF SOT502B
BLL6H1214-500 1200 1400 500 50 17 50 pulsed RF SOT539A
BLA6H0912-1000 960 1215 1000 50 17 50 pulsed RF SOT539A
3.7.3.3 S-band LDMOS transistors
Function Type fmin
(MHz)
fmax
(MHz)
P1dB
(W) ηD (%) Gp (dB) VDS (V) Test signal Package
Driver
BLS6G2731-6G 2700 3100 6 33 15 32 pulsed RF SOT975C
BLS6G3135(S)-20 3100 3500 20 45 15.5 32 pulsed RF SOT608
BLS6G2735L(S)-30 2700 3500 30 50 14 32 pulsed RF SOT1135
Final
BLS6G2731(S)-120 2700 3100 120 48 13.5 32 pulsed RF SOT502B
BLS6G3135(S)-120 3100 3500 120 43 11 32 pulsed RF SOT502
BLS6G2731S-130 2700 3100 130 47 12.5 32 pulsed RF SOT922-1
BLS6G2933S-130 2900 3300 130 47 12.5 32 pulsed RF SOT922-1
BLS7G2933S-150 2900 3300 150 47 13.5 32 pulsed RF SOT922-1
BLS6G2731P-200 2700 3100 200 45 11 32 pulsed RF pallet
BLS6G2933P-200 2900 3300 220 45 11 32 pulsed RF pallet
BLS7G2729L(S)-350P 2700 2900 350 50 13.5 32 pulsed RF SOT539
BLS7G3135L(S)-350P 3100 3500 350 45 12 32 pulsed RF SOT539
B L S 6 G 2731 S -120 G
option: gullwing shaped leads
P1dB power
S: earless package
P: pallet
frequency band (in 100MHz; here: 2700-3100)
G: standard LDMOS (≤ 28V)
H: high voltage LDMOS (50V)
LDMOS technology generation
A: avionics frequency band operation
L: L-band frequency operation
S: S-band frequency operation
L: high frequency power transistor
B: semiconductor die made of Si
94 NXP Semiconductors RF Manual 15th edition
Digital interface
Family Description Input
buffer
TTL/
CMOS LVCMOS LVDS/
DDR CGV™ Supply
voltage (V)
Power dissipation
per channel (mW)
SFDR
(dBc)
SNR
(dBFS) Package
ADC1613D series Dual 16-bit ADC up to 65/80/105/125 Msps •1.8 / 3.0 635 89 71.6 HVQFN56 8x8
ADC1613S series Single 16-bit ADC up to 65/80/105/125 Msps •1.8 / 3.0 690 87 71.4 HVQFN32 7x7
ADC1610S series Single 16-bit ADC up to 65/80/105/125 Msps • • 1.8 / 3.0 630 89 71.6 HVQFN40 6x6
ADC1415S series Single 14-bit ADC up to 65/80/105/125 Msps • • • 1.8 /3.0/5.0 840 87 71.4 HVQFN40 6x6
ADC1413D series Dual 14-bit ADC up to 65/80/105/125 Msps •1.8 / 3.0 635 87 71.4 HVQFN56 8x8
ADC1413S series Single 14-bit ADC up to 65/80/105/125 Msps •1.8 / 3.0 690 87 71.4 HVQFN32 7x7
ADC1412D series Dual 14-bit ADC up to 65/80/105/125 Msps • • 1.8 / 3.0 610 87 71.4 HVQFN64 9x9
ADC1410S series Single 14-bit ADC up to 65/80/105/125 Msps • • 1.8 / 3.0 630 87 71.4 HVQFN40 6x6
ADC1215S series Single 12-bit ADC up to 65/80/105/125 Msps • • • 1.8 /3.0/5.0 840 87 69.6 HVQFN40 6x6
ADC1213D series Dual 12-bit ADC up to 65/80/105/125 Msps •1.8 / 3.0 635 87 69.6 HVQFN56 8x8
ADC1213S series Single 12-bit ADC up to 65/80/105/125 Msps •1.8 / 3.0 690 87 71.4 HVQFN32 7x7
ADC1212D series Dual 12-bit ADC up to 65/80/105/125 Msps • • 1.8 / 3.0 610 87 69.6 HVQFN64 9x9
ADC1210S series
Single 12-bit ADC up to 65/80/105/125 Msps
• • 1.8 / 3.0 630 87 69.6 HVQFN40 6x6
ADC1207S080
Single 12-bit ADC 80 Msps
• • 5.0 840 90 71 HTQFP48 7x7
ADC1206S series
Single 12-bit ADC up to 40/55/70 Msps
• • 3.3 / 5.0 550 70 64 QFP44
ADC1115S125
Single 11-bit ADC up to 125 Msps
• • • 1.8 / 3.0/5.0 840 87 66.2 HVQFN40 6x6
ADC1113D125
Dual 11-bit ADC up to 125 Msps
•1.8 / 3.0 635 87 66.2 HVQFN56 8x8
ADC1113S125
Single 11-bit ADC up to 125 Msps
•1.8 / 3.0 690 86 71,4 HVQFN32 7x7
ADC1112D125
Dual 11-bit ADC up to 125 Msps
• • 1.8 / 3.0 610 87 66.2 HVQFN56 8x8
ADC1015S series
Single 10-bit ADC up to 65/80/105/125 Msps
• • • 1.8 /3.0/5.0 840 87 61.6 HVQFN40 6x6
ADC1010S series
Single 10-bit ADC up to 65/80/105/125 Msps
• • 1.8 / 3.0 630 87 61.6 HVQFN40 6x6
ADC1006S series
Single 10-bit ADC up to 55/70 Msps
• • 3.3 / 5.0 550 71 59 QFP44
ADC1005S060
Single 10-bit ADC 60 Msps
•5.0 312 72 58 SSOP28
ADC1004S series
Single 10-bit ADC 30/40/50 Msps
•5.0 175 72 58 SSOP28
ADC1003S series
Single 10-bit ADC 30/40/50 Msps
•5.0 235 70 58 SSOP28
ADC1002S020
Single 10-bit ADC 20 Msps
•3 to 5.25 53 72 60 LQFP32
ADC0808S series
Single 8-bit ADC up to 125/250 Msps
•1.8 / 3.3 215 56 48 HTQFP48 7x7
ADC0804S series
Single 8-bit ADC up to 30/40/50 Msps
•5.0 175 72 49 SSOP28
ADC0801S040
Single 8-bit ADC 40 Msps
• • 2.7 to 5.5 30 59 47 SSOP20
Digital interface
Family Description LVCMOS CGV™ Supply
voltage (V)
Power dissipation
per channel (mW)
SFDR
(dBc) Interpolation Package
DAC1408D series Dual 14-bit DAC up to 650/750 Msps •1.8 / 3.3 700 76 2x, 4x, 8x HVQFN64 9x9
DAC1405D series Dual 14-bit DAC up to 650/750 Msps •1.8 / 3.3 435 77 2x, 4x, 8x HTQFP100 14x14
DAC1403D160 Dual 14-bit DAC 160 Msps •3.3 210 80 2x HTQFP80 12x12
DAC1401D125 Dual 14-bit DAC 125 Msps •3.3 95 88 - LQFP48
DAC1208D series Dual 12-bit DAC up to 650/750 Msps •1.8 / 3.3 700 76 2x, 4x, 8x HVQFN64 9x9
DAC1205D series Dual 12-bit DAC up to 650/750 Msps •1.8 / 3.3 435 80 2x, 4x, 8x HTQFP100 14x14
DAC1203D160 Dual 12-bit DAC 160 Msps •3.3 210 77 2x HTQFP80 12x12
DAC1201D125 Dual 12-bit DAC 125 Msps •3.3 95 65 - LQFP48
DAC1008D series Dual 10-bit DAC up to 650/750 Msps •1.8 / 3.3 700 76 2x, 4x, 8x HVQFN64 9x9
DAC1005D series Dual 10-bit DAC up to 650/750 Msps •1.8 / 3.3 435 77 2x, 4x, 8x HTQFP100 14x14
DAC1003D160 Dual 10-bit DAC 160 Msps •3.3 210 80 2x HTQFP80 12x12
DAC1001D125 Dual 10-bit DAC 125 Msps •3.3 95 65 - LQFP48
Bold Red = New, highly recommended product
3.8 High-speed data converters
As a leader in high performance mixed-signal IC products, NXP offers an extensive selection of
high-speed data converters, with digital interfaces including JESD204A (in CGVTM product line), as
well as CMOS LVCMOS and LVDS DDR interfaces. NXP's high-speed DACs and ADCs deliver
best-in-class converter core performance and ultra-stable dynamic performance across a broad
temperature range. NXP is the only semiconductor vendor to offer high-speed data convertors,
small signal RF building blocks, and RF power amplifiers, to enable system-level integration across
the full radio transceiver chain.
More information on NXP’s high-speed converters:
`Fast track your design with NXP’s high-speed converters
http://www.nxp.com/campaigns/fasttrackyourdesign/
`All literature: http://www.nxp.com/dynamic/literature/tid-50935_tree-product/data.html
3.8.1 High-speed ADCs
3.8.2 High-speed DACs
95NXP Semiconductors RF Manual 15th edition
Design support
4. Design support
4.1 S-parameters
S-parameters help you to simulate the behavior of NXP devices
using your own adjustments for voltage, current, and more.
Wideband transistors, FETs & MMICs
For all types in the below tables there are S-parameters
available. In the interactive PDF of the RF manual all these
type numbers are hyperlinks that take you directly to the
corresponding product information page on the NXP website.
Scroll down to find the S-parameters on each product
information page.
Wideband transistors
BF67 BFG540W BFR93AW
BFG135 BFG541 BFS17
BFG198 BFG590 BFS17A
BFG21W BFG591 BFS17W
BFG25A/X BFG93A BFS25A
BFG31 BFG94 BFS505
BFG35 BFG97 BFS520
BFG310/XR BFM505 BFS540
BFG310W/XR BFM520 BFT25
BFG325/XR BFQ149 BFT25A
BFG325W/XR BFQ18A BFT92
BFG403W BFQ19 BFT92W
BFG410W BFQ67 BFT93
BFG424F BFQ67W BFT93W
BFG424W BFR106 BFU725F/N1
BFG425W BFR505 BRF505T
BFG480W BFR520 PBR941
BFG505 BFR540 PBR951
BFG520 BFR92A PRF947
BFG520W BFR92AW PRF949
BFG540 BFR93A PRF957
FETs
BF1211 BF1212 BF511
BF1211R BF1212R BF513
BF1211WR BF1212WR BF862
MMICs
BGA2001 BGM1012 BGA6489
BGA2003 BGM1013 BGA6589
BGA2711 BGM1014 BGA2800
BGA2748 BGM2011 BGA2801
BGA2771 BGA2715 BGA2815
BGA2776 BGA2716 BGA2816
BGA2709 BGA2717 BGA2850
BGU7003 BGA2011 BGA2865
BGA2712 BGA2012 BGA2866
BGM1011 BGA6289
4.2 Simulation models
4.2.1 Spice models
Spice models help you to optimize performance and
make it easier to know which external components impact
performance.
Wideband transistors, FETs & Varicaps diodes
For all types in the below tables there are Spice models available.
In the interactive PDF of the RF manual all these type numbers
are hyperlinks that take you directly to the corresponding product
information page on the NXP website. Scroll down to find the
Spice models on each product information page.
Wideband transistors
BFG10 BFG505W/X BFM505 BFS520
BFG10/X BFG520 BFM520 BFS540
BFG10W/X BFG520/X BFQ149 BFT25A
BFG135 BFG520/XR BFQ18A BFT92
BFG198 BFG520W BFQ19 BFT92W
BFG21W BFG520W/X BFQ540 BFT93
BFG25A/X BFG540 BFQ67 BFT93W
BFG25AW/X BFG540/X BFQ67W BFU610F
BFG31 BFG540/XR BFR106 BFU630F
BFG310/XR BFG540W BFR505 BFU660F
BFG310W/XR BFG540W/X BFR505T BFU690F
BFG325/XR BFG540W/XR BFR520 BFU710F
BFG325W/XR BFG541 BFR540 BFU725F
BFG35 BFG590 BFR92A BFU730F
BFG403W BFG590/X BFR92AW BFU760F
BFG410W BFG591 BFR93A BFU790F
BFG424F BFG67 BFR93AW PBR941
BFG424W BFG67/X BFS17 PBR951
BFG425W BFG92A/X BFS17A PRF947
BFG480W BFG93A BFS17W PRF949
BFG505 BFG94 BFS25A PRF957
BFG505/X BFG97 BFS505
FETs
BF862 BF908 BF909 BF998
BF904
Varicap diodes
BB145B BB156 BB201 BB208-02
BB149 BB179 BB202
BB149A BB179B BB207
4.2.2 Interactive datasheet
Quickly and easily generate custom datasheets for our
wideband RF transistors based on your specific operating
conditions (http://www.nxp.com/models).
This chapter will guide you trough the available tools, documents, materials and links to ease
the design-in of our products.
Streamline your RF design with leading RF EDA software
Electronic design automation (EDA) software lets RF engineers predict the behavior of a design by performing simulations.
That helps them reduce the number of design cycles, lower design risk, and make better RF component choices. NXP's RF
small signal portfolio is supported by a number of EDA toolkits, including Ansoft Designer RF, AWR Microwave Office, and
Agilent Advanced Design System (ADS). Installation manual area available on the NXP web site at www.nxp.com/models.
96 NXP Semiconductors RF Manual 15th edition
4.2.3 Simulation models for RF power devices
For easy design-in, NXP provides fully physics-based, electro-
thermal models for the RF power transistors. These models are
available for Advanced Design System (ADS)® from Agilent and for
Microwave Office (MWO)® from Applied Wave Research (AWR).
Newly developed models per product are based on the best-in-
class RFLDMOS model, developed by NXP Research, a recognized
leader in physics-based models. This concept yields highly reliable
simulation results over a wide range of electrical conditions. The
standard models fully support DC, AC, s-parameter (small signal),
harmonic balance (large signal) and time-domain simulations.
NXP RF power models allow designers to assess the performance
of complex PA systems at an early stage of the development
process. The available models come with all necessary libraries and
documentation, and can be downloaded from NXP’s website.
Product type ADS
model
MWO
model Product type ADS
model
MWO
model
BLA6G1011-200R Y Y BLF7G20L-250P Y N
BLA6H0912-500 Y Y BLF7G20L-90P Y N
BLA6H1011-600 Y Y BLF7G20LS-140P Y N
BLF369 Y N BLF7G20LS-200 Y N
BLF3G21-6 Y N BLF7G20LS-250P Y N
BLF571 Y Y BLF7G20LS-90P Y N
BLF573 Y Y BLF7G21L-160P Y N
BLF573S Y Y BLF7G21LS-160P Y N
BLF574 Y Y BLF7G22L-130 Y Y
BLF578 Y Y BLF7G22L-130N Y Y
BLF645 Y Y BLF7G22L-160 Y N
BLF6G10-135RN Y Y BLF7G22L-200 Y N
BLF6G10-200RN Y N BLF7G22L-250P Y N
BLF6G10-45 Y Y BLF7G22LS-130 Y Y
BLF6G10L-260PRN Y N BLF7G22LS-160 Y N
BLF6G10L-40BRN Y N BLF7G22LS-200 Y N
BLF6G10LS-135RN Y Y BLF7G22LS-250P Y N
BLF6G10LS-200RN Y N BLF7G24L-100 Y N
BLF6G10LS-260PRN Y N BLF7G24L-140 Y N
BLF6G10S-45 Y Y BLF7G24LS-100 Y N
BLF6G15L-250PBRN Y N BLF7G24LS-140 Y N
BLF6G15L-40BRN Y N BLF7G27L-100 Y N
BLF6G20-180RN Y N BLF7G27L-140 Y N
BLF6G20-230PRN Y N BLF7G27L-150P Y N
BLF6G20-45 Y Y BLF7G27L-200PB Y N
BLF6G20LS-180RN Y N BLF7G27L-75P Y N
BLF6G20S-230PRN Y N BLF7G27L-90P Y N
BLF6G20S-45 Y Y BLF7G27LS-100 Y N
BLF6G21-10G Y Y BLF7G27LS-140 Y N
BLF6G22-180RN Y N BLF7G27LS-150P Y N
BLF6G22-45 Y Y BLF7G27LS-200PB Y N
BLF6G22LS-180RN Y N BLF7G27LS-75P Y N
BLF6G22S-45 Y Y BLF7G27LS-90P Y N
BLF6G27-10 Y N BLF871 Y Y
BLF6G27-10G Y Y BLF871S Y Y
BLF6G27-135 Y N BLF878 Y Y
BLF6G27-45 Y Y BLF881 Y Y
BLF6G27-75 Y N BLF881S Y Y
BLF6G27L-40P Y N BLF888 Y N
BLF6G27LS-135 Y N BLF888A Y Y
BLF6G27LS-40P Y N BLF888AS Y Y
BLF6G27LS-75 Y N BLL6H0514-25 Y Y
BLF6G27S-45 Y Y BLL6H0514L-130 Y Y
BLF6G38-10 Y N BLL6H0514LS-130 Y Y
BLF6G38-100 Y N BLL6H1214-500 Y N
BLF6G38-10G Y Y BLL6H1214L-250 Y Y
BLF6G38-25 Y Y BLL6H1214LS-250 Y Y
BLF6G38-50 Y Y BLM6G22-30 Y N
BLF6G38LS-100 Y N BLS6G2731-6G Y N
BLF6G38LS-50 Y Y BLS6G2731S-130 Y Y
BLF6G38S-25 Y Y BLS6G3135-120 Y Y
BLF7G15L-300P Y N BLS6G3135-20 Y N
BLF7G15LS-200 Y N BLS6G3135S-120 Y Y
BLF7G20L-200 Y N BLS6G3135S-20 Y N
4.3 Application notes
Multiple RF applications are featured in the RF Manual’s first
chapter including application diagrams, recommended types
and product highlights. More in-depth application information
is available in the second chapter. And on the NXP website we
have additional application notes available in the RF section
(http://www.nxp.com/products/all_appnotes/).
4.4 Demo boards
BGA2001 demo board
4.4.1 RF transistor, MMIC & IC demo boards
RF transistor, MMIC & IC demo boards are available (although
limited) via your local NXP representative or authorized
distributor (look at the last chapter: Web Links and Contacts).
RF small signal demo boards
BFU690F BGA2800 BGM1014 TFF11088HN
BFU725F/N1 BGA2801 BGU7003 TFF11092HN
BGA2001 BGA2815 BGU7005 TFF11096HN
BGA2003 BGA2816 BGU7007 TFF11101HN
BGA2011 BGA2850 BGU7030F TFF11105HN
BGA2012 BGA2865 BGU7031 TFF11110HN
BGA2031 BGA2866 BGU7032 TFF11115HN
BGA2709 BGA6289 BGU7033 TFF11121HN
BGA2711 BGA6489 BGU7041 TFF11126HN
BGA2712 BGA6589 BGU7042 TFF11132HN
BGA2714 BGA6589 TFF1003HN TFF11139HN
BGA2715 BGA7024 TFF11070HN TFF11145HN
BGA2716 BGA7124 TFF11073HN TFF11152HN
BGA2748 BGM1011 TFF11077HN
BGA2771 BGM1012 TFF11080HN
BGA2776 BGM1013 TFF11084HN
BGU7005 demo board BGA7124 demo board
97NXP Semiconductors RF Manual 15th edition
Design support
4.4.2 RF power transistor demo boards
Demo boards are available (although limited) via your local NXP
representative (see the last chapter: Web Links and Contacts).
4.5 Samples
For samples of released or non-released products, please
contact your local NXP sales representative or authorized
distributor. NXP sales offices and distributors:
http://www.nxp.com/profile/sales.
4.6 Datasheets
Datasheets are available on the NXP website: www.nxp.com.
4.4.3 High-speed converter demo boards
High-speed converter demo boards are available via your local
NXP representative or authorized distributor.
ADC demo boards
Type Description
ADC0801S040 Demo board; both CMOS and TTL outputs
ADC0804S series Demo boards; both CMOS and TTL outputs
ADC0808S series Demo boards; CMOS outputs
ADC1002S020 Demo board; both CMOS and TTL outputs
ADC1003S series Demo boards; both CMOS and TTL outputs
ADC1004S series Demo boards; both CMOS and TTL outputs
ADC1005S060 Demo board; both CMOS and TTL outputs
ADC1006S series Demo boards; both CMOS and TTL outputs
ADC1010S series
Demo boards with both CMOS and LVDS outputs
Demo boards CMOS version; SPI, regulators and CMOS buffer on board
Demo boards LVDS output with SAMTEC connector; SPI, regulators
on board
ADC1015S series
Demo boards with both CMOS and LVDS outputs
Demo boards; CMOS version; SPI, regulators and CMOS buffer on board;
Demo boards; SPI, regulators on board; LVDS output with SAMTEC
connector
ADC1112D125
Demo board; CMOS version; SPI, regulators and CMOS buffer on board
Demo board; SPI, regulators on board; LVDS output only SAMTEC
connector
ADC1113D125
Demo board; VIRTEX 5 FPGA on board
Demo board; compliant with Lattice, Altera, Xilinx FPGA boards
through specific connectors
ADC1113S125 Demo board; VIRTEX 5 FPGA on board
ADC1115S125
Demo board; both CMOS and LVDS
Demo board; CMOS version; SPI, regulators and CMOS buffer on board
Demo board; SPI, regulators on board; LVDS output only SAMTEC
connector
ADC1206S series Demo boards; both CMOS and TTL outputs
ADC1207S080 Demo board; both CMOS and TTL outputs
ADC1210S series
Demo boards with both CMOS and LVDS
Demo boards; CMOS version; SPI, regulators and CMOS buffer on board
Demo boards; SPI, regulators on board; LVDS output only SAMTEC
connector
ADC1212D series Demo boards; CMOS version; SPI, regulators and CMOS buffer on board
Demo boards; SPI, regulators on board; LVDS output only SAMTEC
connector
ADC1213D series
Demo boards; VIRTEX 5 FPGA on board
Demo boards; compliant with Lattice, Altera, Xilinx FPGA boards
through specific connectors
Demo board; Lattice ECP3 FPGA on board
Type Description
ADC1213S series Demo boards; VIRTEX 5 FPGA on board
ADC1215S series
Demo boards with both CMOS and LVDS
Demo boards; CMOS version; SPI, regulators and CMOS buffer on board
Demo boards; SPI, regulators on board; LVDS output only SAMTEC
connector
ADC1410S series
Demo boards with both CMOS and LVDS
Demo boards; CMOS version; SPI, regulators and CMOS buffer on board
Demo boards; SPI, regulators on board; LVDS output only SAMTEC
connector
ADC1412D series
Demo boards; CMOS version; SPI, regulators and CMOS buffer on board
Demo boards; SPI, regulators on board; LVDS output only SAMTEC
connector
ADC1413D series
Demo boards; VIRTEX 5 FPGA on board
Demo boards; compliant with Lattice, Altera, Xilinx FPGA boards
through specific connectors
Demo board; Lattice ECP3 FPGA on board
ADC1413S series Demo boards; VIRTEX 5 FPGA on board
ADC1415S series
Demo boards; both CMOS and LVDS outputs
Demo boards; CMOS version; SPI, regulators and CMOS buffer on board
Demo boards; SPI, regulators on board; LVDS output only SAMTEC
connector
ADC1610S series
Demo boards; CMOS version; SPI, regulators and CMOS buffer on board
Demo boards; SPI, regulators on board; LVDS output only SAMTEC
connector
ADC1613D series
Demo boards; VIRTEX 5 FPGA on board
Demo boards; compliant with Lattice, Altera, Xilinx FPGA boards
through specific connectors
ADC1613S series Demo boards; VIRTEX 5 FPGA on board
DAC demo boards
Type Description
DAC1001D125 Demo board; LVCMOS inputs
DAC1003D160 Demo board; LVCMOS inputs
DAC1005D series Demo boards; SPI, LVCMOS inputs
DAC1201D125 Demo board; LVCMOS inputs
DAC1203D160 Demo board; LVCMOS inputs
DAC1205D series Demo boards; SPI, LVCMOS inputs
DAC1401D125 Demo board; LVCMOS inputs
DAC1403D160 Demo board; LVCMOS inputs
DAC1405D series Demo boards; SPI, LVCMOS inputs
DAC1205D series Demo board; LVCMOS inputs
DAC1408D series
Demo boards; compliant with Lattice, Altera, Xilinx FPGA
boards through specific connectors
Demo boards; Virtex 5 FPGA
Demo boards with Lattice ECP3 FPGA
DAC1208D series
Demo boards; compliant with Lattice, Altera, Xilinx FPGA
boards through specific connectors
Demo boards with Virtex 5 FPGA
DAC1008D series
Demo boards; compliant with Lattice, Altera, Xilinx FPGA
boards through specific connectors
Demo boards with Virtex 5 FPGA
KIT ECP3 ADC1413D080+DAC1408D650 with Lattice ECP3 FPGA demo kit
98 NXP Semiconductors RF Manual 15th edition
4.7 Design-in support
If you need design-in support, please contact your local NXP
sales representative or authorized distributor.
4.8 Interactive selection guides
On the NXP website you can find parametric filters to help
you choose the right device for your design. Please go to the
product category page of your choice and click on selection
guide.
NEW : i-Phone App RF calculator tool available
Check out the App store. Android app to be released in Q3.
99NXP Semiconductors RF Manual 15th edition
Cross-references
& replacements
5. Cross-references & replacements
NXP cross-references:
http://www.nxp.com/search/
NXP end-of-life:
http://www.nxp.com/products/eol/
5.1 Cross-references: manufacturer types versus NXP types
In alphabetical order of manufacturer type
Abbreviations:
Base station
Broadcasts
BS diode
CATV OR
CATV PD
CATV PPA
CATV PPA/HG
CATV RA
FET
Microwave
MMIC
Varicap
WB trs 1-4
WB trs 5-7
Base station power transistors
Broadcast power transistors
Band switch diode
CATV optical receiver
CATV power doubler
CATV push-pull amplifier
CATV push-pull amplifier high gain
CATV reverse amplifier
Field-effect transistor
Microwave power transistors
Monolithic microwave integrated circuit
Varicap diode
Wideband transistor 1-4 generation
Wideband transistor 5-7 generation
Manufacturer type Manufacturer NXP type Product family
10500 Microsemi BLA6H0912-500 Microwave
10502 Microsemi BLA6H0912-500 Microwave
PTF 081301F - 130 W Infineon BLF881 Broadcast
AH125 Triquint BGA7127 MMIC
SXB-4089 RFMD BGA7127 MMIC
0910-150M Microsemi BLF871 Broadcast
0910-300M Microsemi BLF878 Broadcast
0910-60M Microsemi BLF878 Broadcast
0912-45 Microsemi BLL6H0514-25 Microwave
1011LD200 Microsemi BLA6G1011-200R Microwave
1011LD300 Microsemi BLA6G1011-200R Microwave
1015MP Microsemi BLL6H0514-25 Microwave
1035MP Microsemi BLL6H0514-25 Microwave
1214-30 Microsemi BLL6H0514-25 Microwave
1214-32L Microsemi BLL6H0514-26 Microwave
1SS314 Toshiba BA591 BS diode
1SS356 Rohm BA591 BS diode
1SS381 Toshiba BA277 BS diode
1SS390 Rohm BA891 BS diode
1SV172 Toshiba BAP50-04 PIN diode
1SV214 Toshiba BB149 Varicap
1SV214 Toshiba BB149A Varicap
1SV215 Toshiba BB153 Varicap
1SV228 Toshiba BB201 Varicap
1SV231 Toshiba BB152 Varicap
1SV232 Toshiba BB148 Varicap
1SV233 Sanyo BAP70-03 PIN diode
1SV234 Sanyo BAP64-04 PIN diode
1SV239 Toshiba BB145B Varicap
Manufacturer type Manufacturer NXP type Product family
1SV241 Sanyo BAP64-02 PIN diode
1SV246 Sanyo BAP64-04W PIN diode
1SV247 Sanyo BAP70-02 PIN diode
1SV248 Sanyo BAP50-02 PIN diode
1SV249 Sanyo BAP50-04W PIN diode
1SV250 Sanyo BAP50-03 PIN diode
1SV251 Sanyo BAP50-04 PIN diode
1SV252 Toshiba BAP50-04W PIN diode
1SV254 Toshiba BB179 Varicap
1SV263 Sanyo BAP50-02 PIN diode
1SV264 Sanyo BAP50-04W PIN diode
1SV266 Sanyo BAP50-03 PIN diode
1SV267 Sanyo BAP50-04 PIN diode
1SV269 Toshiba BB148 Varicap
1SV270 Toshiba BB156 Varicap
1SV271 Toshiba BAP50-03 PIN diode
1SV278 Toshiba BB179 Varicap
1SV279 Toshiba BB179 Varicap
1SV282 Toshiba BB178 Varicap
1SV282 Toshiba BB187 Varicap
1SV283 Toshiba BB178 Varicap
1SV283 Toshiba BB187 Varicap
1SV284 Toshiba BB156 Varicap
1SV288 Toshiba BB152 Varicap
1SV290 Toshiba BB182 Varicap
1SV294 Sanyo BAP70-03 PIN diode
1SV305 Toshiba BB202 Varicap
1SV307 Toshiba BAP51-03 PIN diode
1SV308 Toshiba BAP51-02 PIN diode
100 NXP Semiconductors RF Manual 15th edition
Manufacturer type Manufacturer NXP type Product family
1SV322 Toshiba BB202LX Varicap
1T362 PEC BB149 Varicap
1T362A PEC BB149A Varicap
1T363A PEC BB153 Varicap
1T368A PEC BB148 Varicap
1T369 PEC BB152 Varicap
1T379 PEC BB131 Varicap
1T397 PEC BB152 Varicap
1T399 PEC BB148 Varicap
1T402 PEC BB179B Varicap
1T403 PEC BB178 Varicap
1T404A PEC BB187 Varicap
1T405A PEC BB187 Varicap
1T406 PEC BB182 Varicap
1T408 PEC BB187 Varicap
2729-125 Microsemi BLS6G2731-120 Microwave
2729-170 Microsemi BLS6G2731-120 Microwave
2731-100M Microsemi BLS6G2731-120 Microwave
2931-150 Microsemi BLS6G2731-120 Microwave
2F1G20DS RFHIC CGD1042H CATV PD
2F1G20DS RFHIC CGD1040Hi CATV PD
2F1G20P RFHIC CGY1041 CATV PP
2F1G22DS RFHIC CGD1042H CATV PD
2F1G22DS RFHIC CGD1042Hi CATV PD
2F1G22DS RFHIC CGD982HCi CATV PD
2F1G23P RFHIC CGY1043 CATV PP
2F1G23P RFHIC CGY1041 CATV PP
2F1G24D RFHIC CGD1044Hi CATV PD
2F1G24D RFHIC CGD985HCi CATV PD
2F1G24DS RFHIC CGD1044H CATV PD
2F722DS RFHIC BGD816L CATV PD
2F8718P RFHIC BGY885A CATV PP
2F8719DS RFHIC BGD812 CATV PD
2F8720DS RFHIC BGD814 CATV PD
2F8723P RFHIC BGY887 CATV PP
2F8734P RFHIC CGY888C CATV PP
2N3330 Standard J176 FET
2N3331 Standard J176 FET
2N4220 Standard BF245A FET
2N4856 Standard BSR56 FET
2N4857 Standard BSR57 FET
2N4858 Standard BSR58 FET
2N5114 Standard J174 FET
2N5115 Standard J175 FET
2N5116 Standard J175 FET
2N5432 Standard J108 FET
2N5433 Standard J108 FET
2N5434 Standard J109 FET
2N5457 Standard BF245A FET
2N5458 Standard BF245A FET
2N5459 Standard BF245B FET
2N5653 Standard J112 FET
2N5654 Standard J111 FET
2SC4094 NEC BFG520/XR WB trs 1-4
2SC4095 NEC BFG520/XR WB trs 1-4
2SC4182 NEC BFS17W WB trs 1-4
2SC4184 NEC BFS17W WB trs 1-4
2SC4185 NEC BFS17W WB trs 1-4
2SC4186 NEC BFR92AW WB trs 1-4
2SC4226 NEC PRF957 WB trs 1-4
2SC4227 NEC BFQ67W WB trs 1-4
2SC4228 NEC BFS505 WB trs 1-4
2SC4247 Toshiba BFR92AW WB trs 1-4
2SC4248 Toshiba BFR92AW WB trs 1-4
2SC4315 Toshiba BFG520/XR WB trs 1-4
2SC4320 Toshiba BFG520/XR WB trs 1-4
2SC4321 Toshiba BFQ67W WB trs 1-4
2SC4325 Toshiba BFS505 WB trs 1-4
2SC4394 Toshiba PRF957 WB trs 1-4
2SC4536 NEC BFQ19 WB trs 1-4
2SC4537 Renesas BFR93AW WB trs 1-4
2SC4592 Renesas BFG520/XR WB trs 1-4
2SC4593 Renesas BFS520 WB trs 1-4
2SC4703 NEC BFQ19 WB trs 1-4
2SC4784 Renesas BFS505 WB trs 1-4
2SC4807 Renesas BFQ18A WB trs 1-4
Manufacturer type Manufacturer NXP type Product family
2SC4842 Toshiba BFG540W/XR WB trs 1-4
2SC4899 Renesas BFS505 WB trs 1-4
2SC4900 Renesas BFG520/XR WB trs 1-4
2SC4901 Renesas BFS520 WB trs 1-4
2SC4988 Renesas BFQ540 WB trs 1-4
2SC5011 NEC BFG540W/XR WB trs 1-4
2SC5012 NEC BFG540W/XR WB trs 1-4
2SC5065 Toshiba PRF957 WB trs 1-4
2SC5085 Toshiba PRF957 WB trs 1-4
2SC5087 Toshiba BFG520/XR WB trs 1-4
2SC5088 Toshiba BFG540W/XR WB trs 1-4
2SC5090 Toshiba BFS520 WB trs 1-4
2SC5092 Toshiba BFG520/XR WB trs 1-4
2SC5095 Toshiba BFS505 WB trs 1-4
2SC5107 Toshiba BFS505 WB trs 1-4
2SC5463 Toshiba BFQ67W WB trs 1-4
2SC5593 Renesas BFG410W WB trs 5-7
2SC5594 Renesas BFG425W WB trs 5-7
2SC5623 Renesas BFG410W WB trs 5-7
2SC5624 Renesas BFG425W WB trs 5-7
2SC5631 Renesas BFQ540 WB trs 1-4
2SC6023 Sanyo BFG424W WB trs 5-7
2SJ105GR Standard J177 FET
2SK163-K Renesas J113 FET
2SK163-L Renesas J113 FET
2SK163-M Renesas J113 FET
2SK163-N Renesas J113 FET
2SK210BL Renesas PMBFJ309 FET
2SK370BL Renesas J109 FET
2SK370GR Renesas J109 FET
2SK370V Renesas J109 FET
2SK381 Renesas J113 FET
2SK43 Renesas J113 FET
2SK435 Renesas J113 FET
2SK508 Renesas PMBFJ308 FET
3SK290 Renesas BF998WR FET
AH118 Triquint BGA7124 MMIC
AH118 Triquint BGA7024 MMIC
AH215 Triquint BGA7130 MMIC
BA592 Infineon BA591 BS diode
BA595 Infineon BAP51-03 PIN diode
BA595 Infineon BAP70-03 PIN diode
BA597 Infineon BAP70-03 PIN diode
BA885 Infineon BAP70-03 PIN diode
BA892 Infineon BA891 BS diode
BA892-02V Infineon BA277 PIN diode
BA892-02V Infineon BA891 PIN diode
BA892V-02V-GS08 Vishay BA891 PIN diode
BA895 Infineon BAP70-02 PIN diode
BAR14-1 Infineon BAP70-03 PIN diode
BAR15-1 Infineon BAP70-03 PIN diode
BAR16-1 Infineon BAP70-03 PIN diode
BAR17 Infineon BAP50-03 PIN diode
BAR50-02L Infineon BAP50LX PIN diode
BAR50-02V Infineon BAP50-02 PIN diode
BAR50-02V Infineon BAP50-03 PIN diode
BAR50-02V Infineon BAP50-05 PIN diode
BAR50-03W Infineon BAP70-02 PIN diode
BAR60 Infineon BAP50-03 PIN diode
BAR61 Infineon BAP50-03 PIN diode
BAR63 Infineon BAP63-03 PIN diode
BAR63-02L Infineon BAP63-02 PIN diode
BAR63-02L Infineon BAP63LX PIN diode
BAR63-02V Infineon BAP63-02 PIN diode
BAR63-02W Infineon BAP63-02 PIN diode
BAR63-03W Infineon BAP63-03 PIN diode
BAR63-05 Infineon BAP63-05W PIN diode
BAR63-05W Infineon BAP63-05W PIN diode
BAR63V-02V-GS08 Vishay BAP63-02 PIN diode
BAR63V-05W-GS08 Vishay BAP63-05W PIN diode
BAR64-02LRH Infineon BAP64LX PIN diode
BAR64-02V Infineon BAP64-02 PIN diode
BAR64-02W Infineon BAP64-02 PIN diode
BAR64-03W Infineon BAP64-03 PIN diode
BAR64-04 Infineon BAP64-04 PIN diode
BAR64-04W Infineon BAP64-04W PIN diode
101NXP Semiconductors RF Manual 15th edition
Cross-references
& replacements
Manufacturer type Manufacturer NXP type Product family
BAR64-05 Infineon BAP64-05 PIN diode
BAR64-05W Infineon BAP64-05W PIN diode
BAR64-06 Infineon BAP64-06 PIN diode
BAR64-06W Infineon BAP64-06W PIN diode
BAR64V-02V-GS08 Vishay BAP64-02 PIN diode
BAR64V-04-GS08 Vishay BAP64-04 PIN diode
BAR64V-05-GS08 Vishay BAP64-05 PIN diode
BAR64V-06-GS08 Vishay BAP64-06 PIN diode
BAR64V-06W-GS08 Vishay BAP64-06W PIN diode
BAR65-02L Infineon BAP65LX PIN diode
BAR65-02V Infineon BAP65-02 PIN diode
BAR65-02W Infineon BAP65-02 PIN diode
BAR65-03W Infineon BAP65-03 PIN diode
BAR65V-02V-GS08 Vishay BAP65-02 PIN diode
BAR66 Infineon BAP1321-04 PIN diode
BAR67-02W Infineon BAP1321-02 PIN diode
BAR67-03W Infineon BAP1321-03 PIN diode
BAT18-04 Infineon BAT18 PIN diode
BB304C Renesas BF1201WR FET
BB304M Renesas BF1201R FET
BB305C Renesas BF1201WR FET
BB305M Renesas BF1201R FET
BB403M Renesas BF909R FET
BB501C Renesas BF1202WR FET
BB501M Renesas BF1202R FET
BB502C Renesas BF1202WR FET
BB502M Renesas BF1202R FET
BB503C Renesas BF1202WR FET
BB503M Renesas BF1202R FET
BB535 Infineon BB149 Varicap
BB545 Infineon BB149A Varicap
BB555 Infineon BB179B Varicap
BB565 Infineon BB179 Varicap
BB601M Renesas BF1202 FET
BB639 Infineon BB148 Varicap
BB639 Infineon BB153 Varicap
BB640 Infineon BB152 Varicap
BB641 Infineon BB152 Varicap
BB659 Infineon BB178 Varicap
BB664 Infineon BB178 Varicap
BB664 Infineon BB187 Varicap
BB669 Infineon BB152 Varicap
BB814 Infineon BB201 Varicap
BB831 Infineon BB131 Varicap
BB833 Infineon BB131 Varicap
BB835 Infineon BB131 Varicap
BBY58-02V Infineon BB202 Varicap
BBY65 Infineon BB202 Varicap
BF1005R Infineon BF1105R FET
BF1005S Infineon BF1105 FET
BF1005SR Infineon BF1105R FET
BF1009S Infineon BF1109 FET
BF1009SR Infineon BF1109R FET
BF1009SW Infineon BF1109WR FET
BF2030 Infineon BF1101 FET
BF2030 Infineon BF1211 FET
BF2030 Infineon BF1212 FET
BF2030R Infineon BF1101R FET
BF2030R Infineon BF1211R FET
BF2030R Infineon BF1212R FET
BF2030W Infineon BF1101WR FET
BF2030W Infineon BF1211WR FET
BF2030W Infineon BF1212WR FET
BF2040 Infineon BF909 FET
BF2040R Infineon BF909R FET
BF2040W Infineon BF909WR FET
BF244A Standard BF245A FET
BF244B Standard BF245B FET
BF244C Standard BF245C FET
BF247A Standard J108 FET
BF247B Standard J108 FET
BF247C Standard J108 FET
BF256A Standard BF245A FET
BF256B Standard BF245B FET
BF256C Standard BF245C FET
BF5020 Infineon BF1212 FET
Manufacturer type Manufacturer NXP type Product family
BF5020R Infineon BF1212R FET
BF5020W Infineon BF1212WR FET
BF5030W Infineon BF909WR FET
BF770A Infineon BFR93A WB trs 1-4
BF771 Infineon PBR951 WB trs 1-4
BF771W Infineon BFS540 WB trs 1-4
BF772 Infineon BFG540 WB trs 1-4
BF775 Infineon BFR92A WB trs 1-4
BF775A Infineon BFR92A WB trs 1-4
BF775W Infineon BFR92AW WB trs 1-4
BF851A Standard BF861A FET
BF851B Standard BF861B FET
BF851C Standard BF861C FET
BF994S Vishay BF994S FET
BF996S Vishay BF996S FET
BF998 Infineon BF998 FET
BF998 Vishay BF998 FET
BF998-GS08 Vishay BF998 FET
BF998R Vishay BF998R FET
BF998R Infineon BF998R FET
BF998R-GS08 Vishay BF998R FET
BF998RW Vishay BF998WR FET
BF998W Infineon BF998WR FET
BFG135A Infineon BFG135 WB trs 1-4
BFG193 Infineon BFG198 WB trs 1-4
BFG194 Infineon BFG31 WB trs 1-4
BFG196 Infineon BFG541 WB trs 1-4
BFG19S Infineon BFG97 WB trs 1-4
BFG235 Infineon BFG135 WB trs 1-4
BFP180 Infineon BFG505/X WB trs 1-4
BFP181 Infineon BFG67/X WB trs 1-4
BFP181T-GS08 Vishay BFG67/X WB trs 1-4
BFP182 Infineon BFG67/X WB trs 1-4
BFP183 Infineon BFG520/X WB trs 1-4
BFP183R Infineon BFG520/XR WB trs 1-4
BFP183T-GS08 Vishay BFG520/X WB trs 1-4
BFP183TW-GS08 Vishay BFG520W/X WB trs 1-4
BFP193 Infineon BFG540/X WB trs 1-4
BFP193W Infineon BFG540W/XR WB trs 1-4
BFP196T-GS08 Vishay BFG540/X WB trs 1-4
BFP196TR-GS08 Vishay BFG540/XR WB trs 1-4
BFP196TRW-GS08 Vishay BFG540W/XR WB trs 1-4
BFP196TW-GS08 Vishay BFG540W/X WB trs 1-4
BFP196W Infineon BFG540W/XR WB trs 1-4
BFP280 Infineon BFG505/X WB trs 1-4
BFP405 Infineon BFG410W WB trs 5-7
BFP420 Infineon BFG425W WB trs 5-7
BFP450 Infineon BFG480W WB trs 5-7
BFP67-GS08 Vishay BFG67/X WB trs 1-4
BFP67R-GS08 Vishay BFG67/X WB trs 1-4
BFP740 Infineon BFU725F WB trs 5-7
BFP740F Infineon BFU725F WB trs 5-7
BFP81 Infineon BFG92A/X WB trs 1-4
BFP92A-GS08 Vishay BFG92A/X WB trs 1-4
BFP93A Infineon BFG93A/X WB trs 1-4
BFP93A-GS08 Vishay BFG93A/X WB trs 1-4
BFQ193 Infineon BFQ540 WB trs 1-4
BFQ19S Infineon BFQ19 WB trs 1-4
BFQ67-GS08 Vishay BFQ67W WB trs 1-4
BFR106 Infineon BFR106 WB trs 1-4
BFR180 Infineon BFR505 WB trs 1-4
BFR180W Infineon BFS505 WB trs 1-4
BFR181 Infineon BFR520 WB trs 1-4
BFR181T-GS08 Vishay BFR520 WB trs 1-4
BFR181TW-GS08 Vishay BFS520 WB trs 1-4
BFR181W Infineon BFS520 WB trs 1-4
BFR182 Infineon PBR941 WB trs 1-4
BFR182W Infineon PRF947 WB trs 1-4
BFR183 Infineon PBR951 WB trs 1-4
BFR183T-GS08 Vishay PBR951 WB trs 1-4
BFR183TW-GS08 Vishay PRF957 WB trs 1-4
BFR183W Infineon PRF957 WB trs 1-4
BFR193 Infineon PBR951 WB trs 1-4
BFR193TW-GS08 Vishay PRF957 WB trs 1-4
BFR193W Infineon PRF957 WB trs 1-4
BFR196T-GS08 Vishay BFR540 WB trs 1-4
102 NXP Semiconductors RF Manual 15th edition
Manufacturer type Manufacturer NXP type Product family
BFR196TW-GS08 Vishay BFS540 WB trs 1-4
BFR35AP Infineon BFR92A WB trs 1-4
BFR92AL Freescale BFR92A WB trs 1-4
BFR92AW-GS08 Vishay BFR92AW WB trs 1-4
BFR92P Infineon BFR92A WB trs 1-4
BFR92W Infineon BFR92AW WB trs 1-4
BFR93A Infineon BFR93A WB trs 1-4
BFR93AL Freescale BFR93A WB trs 1-4
BFR93AW Infineon BFR93AW WB trs 1-4
BFR93AW-GS08 Vishay BFR93AW WB trs 1-4
BFR93-GS08 Vishay BFR93A WB trs 1-4
BFS17-GS08 Vishay BFS17 WB trs 1-4
BFS17-GS08 Vishay BFS17A WB trs 1-4
BFS17L Freescale BFS17 WB trs 1-4
BFS17P Infineon BFS17A WB trs 1-4
BFS17W Infineon BFS17W WB trs 1-4
BFS17W-GS08 Vishay BFS17W WB trs 1-4
BFS481 Infineon BFM505 WB trs 1-4
BFS483 Infineon BFM520 WB trs 1-4
BFT92 Infineon BFT92 WB trs 1-4
BFT93 Infineon BFT93 WB trs 1-4
BG3123 Infineon BF1203 FET
BG3123R Infineon BF1203 FET
BG3130 Infineon BF1214 FET
BG3130R Infineon BF1214 FET
BG3430R Infineon BF1207 FET
BG5120K Infineon BF1210 FET
BG5130R Infineon BF1206 FET
BG5412K Infineon BF1205C FET
BG5412K Infineon BF1208D FET
BGA615 Infineon BGU7007 MMIC
BGA715 Infineon BGU8007 MMIC
BGA915 Infineon BGU8007 MMIC
BIC701C Renesas BF1105WR FET
BIC701M Renesas BF1105R FET
BIC702C Renesas BF1105WR FET
BIC702M Renesas BF1105R FET
BIC801M Renesas BF1105 FET
BSR111 Standard PMBFJ111 FET
BSR112 Standard PMBFJ112 FET
BSR113 Standard PMBFJ113 FET
BSR174 Standard PMBFJ174 FET
BSR175 Standard PMBFJ175 FET
BSR176 Standard PMBFJ176 FET
BSR177 Standard PMBFJ177 FET
CA901 Standard BGX885N CATV PPA
CA901A Standard BGX885N CATV PPA
CA922 Standard BGD885 CATV PD
CA922A Standard BGD885 CATV PD
CMM6004-SC Mimix BGA7124 MMIC
CMM6004-SC Mimix BGA7024 MMIC
CMY91 Infineon BGA2022 MMIC
CMY91 Infineon BGA2022 WB trs 1-4
CXE1089Z RFMD BGA6489 MMIC
CXE1089Z RFMD BGA6589 MMIC
D10040180GT RFMD CGD1042H CATV PD
D10040180GTH RFMD CGD1042H CATV PD
D10040200GT RFMD CGD1042H CATV PD
D10040200GTH RFMD CGD1042H CATV PD
D10040200P1 RFMD CGD1042H CATV PD
D10040200PH1 RFMD CGD1042H CATV PD
D10040220GT RFMD CGD1042H CATV PD
D10040220GTH RFMD CGD1042H CATV PD
D10040230P1 RFMD CGD1042H CATV PD
D10040230PH1 RFMD CGD1042H CATV PD
D10040240GT RFMD CGD1044H CATV PD
D10040240GTH RFMD CGD1044H CATV PD
D10040250GT RFMD CGD1044H CATV PD
D10040250GTH RFMD CGD1044H CATV PD
D10040270GT RFMD CGD1044H CATV PD
D10040270GTH RFMD CGD1044H CATV PD
D10040270GTL RFMD CGD1044H CATV PD
D5540185 Standard BGD502 CATV PD
D7540185 Standard BGD702 CATV PD
D7540200 Standard BGD704 CATV PD
D8640185 Standard BGD802 CATV PD
Manufacturer type Manufacturer NXP type Product family
D8740180GT RFMD CGD942C CATV PD
D8740180GTH RFMD CGD942C CATV PD
D8740220GT RFMD CGD942C CATV PD
D8740220GTH RFMD CGD942C CATV PD
D8740240GT RFMD CGD944C CATV PD
D8740240GTH RFMD CGD944C CATV PD
D8740250GT RFMD CGD944C CATV PD
D8740250GTH RFMD CGD944C CATV PD
D8740270GT RFMD CGD944C CATV PD
D8740270GTH RFMD CGD944C CATV PD
D8740320GT RFMD CGD888C CATV PD
D8740320GTH RFMD CGD888C CATV PD
DME500 Microsemi BLAH0912-500 Microwave
EC2C03C Sanyo BB145B Varicap
F2046 POLYFET BLF542 Broadcast
F2048 POLYFET BLF543 Broadcast
F2247 POLYFET BLF522 Broadcast
FSD273TA Skyworks BB148 Varicap
FSD273TA Skyworks BB178 Varicap
HBFP0405 Agilent BFG410W WB trs 5-7
HBFP0420 Agilent BFG425W WB trs 5-7
HBFP0450 Agilent BFG480W WB trs 5-7
HMC454ST89E Hittite BGA7127 MMIC
HSC277 Renesas BA277 BS diode
HSMP3800 Agilent BAP70-03 PIN diode
HSMP3802 Agilent BAP50-04 PIN diode
HSMP3804 Agilent BAP50-05 PIN diode
HSMP3810 Agilent BAP50-03 PIN diode
HSMP3814 Agilent BAP50-05 PIN diode
HSMP381B Agilent BAP50-03 PIN diode
HSMP381C Agilent BAP50-05 PIN diode
HSMP381F Agilent BAP64-05W PIN diode
HSMP3820 Agilent BAP1321-03 PIN diode
HSMP3822 Agilent BAP1321-04 PIN diode
HSMP3830 Agilent BAP64-03 PIN diode
HSMP3832 Agilent BAP64-04 PIN diode
HSMP3833 Agilent BAP64-06 PIN diode
HSMP3834 Agilent BAP64-05 PIN diode
HSMP3860 Agilent BAP50-03 PIN diode
HSMP3862 Agilent BAP50-04 PIN diode
HSMP3864 Agilent BAP50-05 PIN diode
HSMP386B Agilent BAP50-02 PIN diode
HSMP386E Agilent BAP50-04W PIN diode
HSMP386L Agilent BAP50-05W PIN diode
HSMP3880 Agilent BAP51-03 PIN diode
HSMP3890 Agilent BAP51-03 PIN diode
HSMP3892 Agilent BAP64-04 PIN diode
HSMP3894 Agilent BAP64-05 PIN diode
HSMP3895 Agilent BAP51-02 PIN diode
HSMP389B Agilent BAP51-02 PIN diode
HSMP389C Agilent BAP64-04 PIN diode
HSMP389F Agilent BAP51-05W PIN diode
HVB14S Renesas BAP50-04W PIN diode
HVC131 Renesas BAP65-02 PIN diode
HVC132 Renesas BAP51-02 PIN diode
HVC200A Renesas BB178 Varicap
HVC200A Renesas BB187 Varicap
HVC202A Renesas BB179 Varicap
HVC202B Renesas BB179B Varicap
HVC300A Renesas BB182 Varicap
HVC300B Renesas BB182 Varicap
HVC306A Renesas BB187 Varicap
HVC306B Renesas BB187 Varicap
HVC355B Renesas BB145B Varicap
HVC359 Renesas BB202 Varicap
HVC363A Renesas BB178 Varicap
HVC376B Renesas BB198 Varicap
HVC376B Renesas BB202 Varicap
HVD132 Renesas BAP51-02 PIN diode
HVU131 Renesas BAP65-03 PIN diode
HVU132 Renesas BAP51-03 PIN diode
HVU202(A) Renesas BB149 Varicap
HVU202(A) Renesas BB149A Varicap
HVU300A Renesas BB152 Varicap
HVU307 Renesas BB148 Varicap
HVU315 Renesas BB148 Varicap
103NXP Semiconductors RF Manual 15th edition
Cross-references
& replacements
Manufacturer type Manufacturer NXP type Product family
HVU316 Renesas BB131 Varicap
HVU363A Renesas BB148 Varicap
HVU363A Renesas BB153 Varicap
HVU363B Renesas BB148 Varicap
IB0810M100 Integra BLF871 Broadcast
IB0912L30 Integra BLA6H0514-25 Microwave
IB0912L70 Integra BLA6H0514-25 Microwave
IB0912M210 Integra BLA6H0514-25 Microwave
IB0912M500 Integra BLA6H0912-500 Microwave
IB0912M600 Integra BLA6H0912-500 Microwave
IB1011L15 Integra BLA6H0514-25 Microwave
IB1011L220 Integra BLA6G1011-200R Microwave
IB1011L40 Integra BLA6H0514-25 Microwave
IB1011L470 Integra BLA6H0912-500 Microwave
IB1011M140 Integra BLA6G1011-200R Microwave
IB1011M190 Integra BLA6G1011-200R Microwave
IB1011M250 Integra BLA6G1011-200R Microwave
IB1011S190 Integra BLA6G1011-200R Microwave
IB1011S250 Integra BLA6G1011-200R Microwave
IB1012S10 Integra BLA6H0514-25 Microwave
IB1012S20 Integra BLA6H0514-25 Microwave
IB2729M5 Integra BLS6G2731-6G Microwave
IB2729M90 Integra BLS6G2731-120 Microwave
IB2731M110 Integra BLS6G2731-120 Microwave
IB2731MH110 Integra BLS6G2731-120 Microwave
IB2931MH155 Integra BLS6G2731-120 Microwave
IB3134M100 Integra BLS6G3135S-120 Microwave
IB3135MH100 Integra BLS6G3135S-120 Microwave
IBP1214M700 Integra BLL6H1214-500 Microwave
IBP1214M700 Integra BLL6H1214-500 Microwave
IBP3135M150 Integra BLS6G3135S-120 Microwave
IDM175CW300 Integra BLF278 Broadcast
IDM500CW150 Integra BLF881 Broadcast
IDM500CW200 Integra BLF888 Broadcast
IDM500CW300 Integra BLF878 Broadcast
IDM500CW80 Integra BLF871 Broadcast
ILD1011M15 Integra BLL6H0514-25 Microwave
ILD1011M150 Integra BLA6G1011-200R Microwave
ILD1011M15HV Integra BLA6H0514-25 Microwave
ILD1011M160HV Integra BLA6G1011-200R Microwave
ILD1011M250 Integra BLA6G1011-200R Microwave
ILD1011M30 Integra BLA6H0514-25 Microwave
ILD1011M400 Integra BLA6H0912-500 Microwave
ILD1011M450HV Integra BLA6H0912-500 Microwave
ILD1011M550HV Integra BLA6H1011-600 Microwave
ILD1214M10 Integra BLL6H0514-25 Microwave
ILD2731M140 Integra BLS6G2731-120 Microwave
ILD3135M120 Integra BLS6G3135S-120 Microwave
ILP1214EL200 Integra BLS7G2933P-200 Microwave
INA-51063 Agilent BGA2001 MMIC
J270 Standard J177 FET
J308 Standard J108 FET
J309 Standard J109 FET
J310 Standard J110 FET
JDP2S01E Toshiba BAP65-02 PIN diode
JDP2S01U Toshiba BAP65-03 PIN diode
JDP2S02AFS Toshiba BAP51-02 PIN diode
JDP2S02AS Toshiba BAP51-03 PIN diode
JDP2S02T Toshiba BAP63-02 PIN diode
JDP2S04E Toshiba BAP50-02 PIN diode
JDS2S03S Toshiba BA891 BS diode
JTDA150A Microsemi BLF177 Broadcast
KP2310R Toko BAP64-04W PIN diode
KTK920BT KEC BF1108 FET
KTK920T KEC BF1108R FET
KV1835E Toko BB199 Varicap
LC421 POLYFET BLF544 Broadcast
MA2S077 Standard BA277 BS diode
MA2S357 Matsushita BB178 Varicap
MA2S357 Matsushita BB187 Varicap
MA2S372 Matsushita BB179 Varicap
MA2S374 Matsushita BB182 Varicap
MA2SV01 Renesas BB202 Varicap
MA357 Matsushita BB153 Varicap
MA366 Matsushita BB148 Varicap
MA368 Matsushita BB131 Varicap
Manufacturer type Manufacturer NXP type Product family
MA372 Matsushita BB149 Varicap
MA372 Matsushita BB149A Varicap
MA4CP101A Matsushita BAP65-03 PIN diode
MA4P274-1141 Matsushita BAP51-03 PIN diode
MA4P275-1141 Matsushita BAP65-03 PIN diode
MA4P275CK-287 Matsushita BAP65-05 PIN diode
MA4P277-1141 Matsushita BAP70-03 PIN diode
MA4P278-287 Matsushita BAP70-03 PIN diode
MA4P789-1141 Matsushita BAP1321-03 PIN diode
MA4P789ST-287 Matsushita BAP1321-04 PIN diode
MAX2659 Maxim BGU7003 MMIC
MAX2659 Maxim BGU7005 MMIC
MAX2659 Maxim BGU7007 MMIC
MC7712 NEC BGY785A CATV PPA
MC7716 NEC BGY787 CATV PPA
MC7722 NEC BGY785A CATV PPA
MC7726 NEC BGY787 CATV PPA
MC-7831 NEC BGY885A CATV PP
MC7831-HA NEC BGY1085A CATV PP
MC-7831-HA NEC BGY1085A CATV PP
MC-7832 NEC BGY887 CATV PP
MC7832-HA NEC CGY1041 CATV PP
MC-7832-HA NEC CGY1041 CATV PP
MC-7833 NEC BGY887B CATV PP
MC-7836 NEC BGY887B CATV PP
MC-7836 NEC CGY1047 CATV PP
MC-7845 NEC BGD802 CATV PD
MC-7846 NEC CGD942C CATV PD
MC-7847 NEC CGD944C CATV PD
MC7852 NEC BGY885A CATV PPA
MC7866 NEC BGD816L CATV PD
MC-7881 NEC BGD802 CATV PD
MC-7882 NEC BGD814 CATV PD
MC-7883 NEC CGD942C CATV PD
MC-7884 NEC CGD944C CATV PD
MC-7891 NEC CGD1042H CATV PD
MC7893 NEC CGD1042Hi CATV PD
MC7893 NEC CGD982HCi CATV PD
MC-7893 NEC CGD1042H CATV PD
MC7894 NEC CGD1044Hi CATV PD
MC7894 NEC CGD985HCi CATV PD
MC-7894 NEC CDG1044H CATV PD
MC7896 NEC CGD1046Hi CATV PD
MC7896 NEC CGD987HCi CATV PD
MC-7896 NEC CGD1044H CATV PD
MCH4009 Sanyo BFG424F WB trs 5-7
MD7P19130 Freescale BLF6G20LS-110 Base station
MD7P19130H Freescale BLF6G20LS-75 Base station
MD7P19130H (2) Freescale BLF6G20(LS)-180RN Base station
MDS400 Microsemi BLA6H0912-500 Microwave
MDS800 Microsemi BLA6H1011-600 Microwave
MHW10186N Freescale BGY1085A CATV PP
MHW10236N Freescale CGY1043 CATV PP
MHW10247AN Freescale CGD1044H CATV PD
MHW10276N Freescale CGY1047 CATV PP
MHW1224 Freescale BGY67 CATV RA
MHW1244 Freescale BGY67A CATV RA
MHW1253LA Freescale BGY67A CATV RA
MHW1254L Freescale BGY68 CATV RA
MHW1254LA Freescale BGY68 CATV RA
MHW1304L Freescale BGY68 CATV RA
MHW1304LA Freescale BGY68 CATV RA
MHW1304LAN Freescale BGY68 CATV RA
MHW1346 Freescale BGY67A CATV RA
MHW1353LA Freescale BGY67A CATV RA
MHW1354LA Freescale BGY68 CATV RA
MHW5182A Freescale BGY585A CATV PPA
MHW5185B Freescale BGD502 CATV PD
MHW5222A Freescale BGY587 CATV PPA
MHW5272A Freescale BGY587B CATV PPA/HG
MHW5342A Freescale BGY588N CATV PPA/HG
MHW5342T Freescale BGY588N CATV PPA/HG
MHW6182 Freescale BGY585A CATV PPA
MHW6182-6 Freescale BGY685A CATV PPA
MHW6182T Freescale BGY585A CATV PPA
MHW6185B Freescale BGD502 CATV PD
104 NXP Semiconductors RF Manual 15th edition
Manufacturer type Manufacturer NXP type Product family
MHW6185T Freescale BGD502 CATV PD
MHW6205 Freescale BGD704 CATV PD
MHW6222 Freescale BGY587 CATV PPA
MHW6222B Freescale BGY687 CATV PPA
MHW6222T Freescale BGY587 CATV PPA
MHW6272 Freescale BGY587B CATV PPA
MHW6272T Freescale BGY587B CATV PPA
MHW6342 Freescale BGY588N CATV PPA
MHW6342T Freescale BGY588N CATV PPA
MHW7182B Freescale BGY785A CATV PPA
MHW7182C Freescale BGY785A CATV PPA
MHW7185C2 Freescale BGD712 CATV PD
MHW7185CL Freescale BGD712 CATV PD
MHW7205C Freescale BGD714 CATV PD
MHW7205CL Freescale BGD714 CATV PD
MHW7205CLN Freescale BGD714 CATV PD
MHW7222 Freescale BGY787 CATV PPA
MHW7222A Freescale BGY787 CATV PPA
MHW7222B Freescale BGY787 CATV PPA
MHW7242A Freescale BGE787B CATV PPA/HG
MHW7272A Freescale BGE787B CATV PPA/HG
MHW7292 Freescale BGE787B CATV PPA/HG
MHW7292A Freescale BGE787B CATV PPA/HG
MHW7292AN Freescale BGE787B CATV PPA/HG
MHW7342 Freescale BGE788 CATV PPA/HG
MHW8142 Freescale BGY883 CATV PPA
MHW8182B Freescale BGY885A CATV PPA
MHW8182C Freescale BGY885A CATV PPA
MHW8182CN Freescale BGY885A CATV PP
MHW8185 Freescale BGD814 CATV PD
MHW8185L Freescale BGD812 CATV PD
MHW8188AN Freescale CGD942C CATV PD
MHW8205 Freescale BGD814 CATV PD
MHW820L Freescale BGD814 CATV PD
MHW8222BN Freescale BGY887 CATV PP
MHW8227A Freescale CGD942C CATV PD
MHW8227AN Freescale CGD942C CATV PD
MHW8247A Freescale CGD944C CATV PPA
MHW8247AN Freescale CGD944C CATV PD
MHW8292 Freescale BGY887B CATV PPA
MHW8342 Freescale BGY888 CATV PPA
MHW8342N Freescale CGY888C CATV PP
MHW9146 Freescale BGY883 CATV PPA
MHW9182B Freescale BGY1085A CATV PPA
MHW9182C Freescale BGY1085A CATV PPA
MHW9182CN Freescale BGY1085A CATV PP
MHW9186 Freescale BGY885A CATV PPA
MHW9186A Freescale BGY885A CATV PPA
MHW9187N Freescale CGD942C CATV PD
MHW9188AN Freescale CGD942C CATV PD
MHW9188N Freescale CGD942C CATV PD
MHW9227AN Freescale CGD942C CATV PD
MHW9242A Freescale CGD1042 CATV PD
MHW9247 Freescale CGD944C CATV PD
MHW9247A Freescale CGD944C CATV PD
MHW9247AN Freescale CGD944C CATV PD
MHW9247N Freescale CGD944C CATV PD
MHWJ5272A Freescale BGY587B CATV PPA
MHWJ7185A Freescale BGD712 CATV PD
MHWJ7205A Freescale BGD714 CATV PD
MHWJ7292 Freescale BGE787B CATV PPA/HG
MHWJ9182 Freescale BGY1085A CATV PPA
MMBF4391 Freescale PMBF4391 FET
MMBF4392 Freescale PMBF4392 FET
MMBF4393 Freescale PMBF4393 FET
MMBF4860 Freescale PMBFJ112 FET
MMBF5484 Freescale BFR31 FET
MMBFJ113 Freescale PMBFJ113 FET
MMBFJ174 Freescale PMBFJ174 FET
MMBFJ175 Freescale PMBFJ175 FET
MMBFJ176 Freescale PMBFJ176 FET
MMBFJ177 Freescale PMBFJ177 FET
MMBFJ308 Freescale PMBFJ308 FET
MMBFJ309 Freescale PMBFJ309 FET
MMBFJ310 Freescale PMBFJ310 FET
MMBFU310 Freescale PMBFJ310 FET
Manufacturer type Manufacturer NXP type Product family
MMBR5031L Freescale BFS17 WB trs 1-4
MMBR5179L Freescale BFS17A WB trs 1-4
MMBR571L Freescale PBR951 WB trs 1-4
MMBR901L Freescale BFR92A WB trs 1-4
MMBR911L Freescale BFR93A WB trs 1-4
MMBR920L Freescale BFR93A WB trs 1-4
MMBR931L Freescale BFT25A WB trs 1-4
MMBR941BL Freescale PBR941 WB trs 1-4
MMBR941L Freescale PBR941 WB trs 1-4
MMBR951AL Freescale PBR951 WB trs 1-4
MMBR951L Freescale PBR951 WB trs 1-4
MMBV105GLT1 ONSemicond. BB156 Varicap
MMBV109LT1 ONSemicond. BB148 Varicap
MMG2001NT1 Freescale BGD816L CATV PD
MMG2001T1 Freescale BGD816L CATV PD
MMG3004NT1 Freescale BGA7127 MMIC
MMG3014 Freescale BGA7124 MMIC
MMG3014 Freescale BGA7024 MMIC
MPAL2731M15 Integra BLS6G2731-6G Microwave
MPAL2731M30 Integra BLS6G2731-6G Microwave
MPAL3035M15 Integra BLS6G2731-6G Microwave
MPAL3035M30 Integra BLS6G2731-6G Microwave
MPF102 Standard BF245A FET
MPF970 Standard J174 FET
MPF971 Standard J176 FET
MRF10005 M/A- COM BLA6H0912-500 Microwave
MRF1000MB M/A- COM BLA6H0912-500 Microwave
MRF10031 M/A- COM BLA6H0912-500 Microwave
MRF1004MB M/A- COM BLA6H0912-500 Microwave
MRF10120 M/A- COM BLA6H0912-500 Microwave
MRF10150 M/A- COM BLL6H0514-25 Microwave
MRF10350 M/A- COM BLL6H0514-25 Microwave
MRF10502 M/A- COM BLL6H0514-25 Microwave
MRF1090MB M/A- COM BLA6H0912-500 Microwave
MRF1150MA M/A- COM BLA6H0912-500 Microwave
MRF1150MB M/A- COM BLA6H0912-500 Microwave
MRF134 M/A- COM BLF871 Broadcast
MRF136 M/A- COM BLF871 Broadcast
MRF136Y M/A- COM BLF881 Broadcast
MRF137 M/A- COM BLF881 Broadcast
MRF140 M/A- COM BLF177 Broadcast
MRF141 M/A- COM BLF177 Broadcast
MRF141G M/A- COM BLF278 Broadcast
MRF148A M/A- COM BLF175 Broadcast
MRF150 M/A- COM BLF177 Broadcast
MRF151 M/A- COM BLF177 Broadcast
MRF151A M/A- COM BLF177 Broadcast
MRF151G M/A- COM BLF278 Broadcast
MRF154 M/A- COM BLF574 Broadcast
MRF157 M/A- COM BLF574 Broadcast
MRF158 M/A- COM BLF871 Broadcast
MRF160 M/A- COM BLF871 Broadcast
MRF166C M/A- COM BLF871 Broadcast
MRF166W M/A- COM BLF881 Broadcast
MRF171A M/A- COM BLF881 Broadcast
MRF173 M/A- COM BLF871 Broadcast
MRF173CQ M/A- COM BLF871 Broadcast
MRF174 M/A- COM BLF881 Broadcast
MRF175GU M/A- COM BLF881 Broadcast
MRF175GV M/A- COM BLF278 Broadcast
MRF175LU M/A- COM BLF871 Broadcast
MRF176GU M/A- COM BLF881 Broadcast
MRF176GV M/A- COM BLF573S Broadcast
MRF177 M/A- COM BLF871 Broadcast
MRF18030ALR3(1) Freescale BLF6G21-30 Base station
MRF18030ALR3(1) Freescale BLF6G20-45 Base station
MRF18030ALSR3(1) Freescale BLF6G21-30 Base station
MRF18030ALSR3(1) Freescale BLF6G20-45 Base station
MRF18030BLR3(1) Freescale BLF6G21-30 Base station
MRF18030BLR3(1) Freescale BLF6G20-45 Base station
MRF18030BLSR3(1) Freescale BLF6G21-30 Base station
MRF18030BLSR3(1) Freescale BLF6G20-45 Base station
MRF18060AL(2) Freescale BLC6G20-75 Base station
MRF18060BL(2) Freescale BLC6G20-75 Base station
MRF18085AL(2) Freescale BLC6G20-75 Base station
MRF18085BL (2) Freescale BLF7G20L(S)-300P Base station
105NXP Semiconductors RF Manual 15th edition
Cross-references
& replacements
Manufacturer type Manufacturer NXP type Product family
MRF18085BL(2) Freescale BLC6G20-75 Base station
MRF18090AR3(1) Freescale BLF6G20-110 Base station
MRF18090B (2) Freescale BLF7G20L(S)-300P Base station
MRF18090B(2) Freescale BLF6G20-110 Base station
MRF19030L(2) Freescale BLF6G21-30 Base station
MRF19030L(2) Freescale BLF6G20-45 Base station
MRF19045L(2) Freescale BLF6G20-45 Base station
MRF19060L(2) Freescale BLF6G20-45 Base station
MRF19085LR3(1) Freescale BLF6G20-110 Base station
MRF19085LSR3(1) Freescale BLF6G20-110 Base station
MRF19090R3 (1) Freescale BLF7G20L(S)-300P Base station
MRF19090R3(1) Freescale BLF6G20-110 Base station
MRF19090SR3 (1) Freescale BLF7G20L(S)-300P Base station
MRF19090SR3(1) Freescale BLF6G20-110 Base station
MRF19125 (2) Freescale BLF6G20(LS)-110 Base station
MRF19125(2) Freescale BLF6G20-140 Base station
MRF21010LR1(1) Freescale BLF3G21-6 Base station
MRF21010LSR1(1) Freescale BLF3G21-6 Base station
MRF21030LR3(1) Freescale BLF6G22-30 Base station
MRF21030LSR3(1) Freescale BLF6G22-45 Base station
MRF21045LR3(1) Freescale BLF6G22-45 Base station
MRF21045LSR3(1) Freescale BLF6G22-45 Base station
MRF21060L(2) Freescale BLF6G22-75 Base station
MRF21085L(2) Freescale BLF6G22-100 Base station
MRF21090(2) Freescale BLF6G22-100 Base station
MRF21120R6(1) Freescale BLF6G22-130 Base station
MRF21125(2) Freescale BLF6G22-130 Base station
MRF21125SR3(1) Freescale BLF6G22-130 Base station
MRF21180R6(1) Freescale BLF6G22-180 Base station
MRF275G M/A- COM BLF881 Broadcast
MRF275L M/A- COM BLF871 Broadcast
MRF281SR1(1) Freescale BLF6G21-6 Base station
MRF281ZR1(1) Freescale BLF6G21-6 Base station
MRF282SR1(1) Freescale BLF1822-10 Base station
MRF282ZR1(1) Freescale BLF1822-10 Base station
MRF284LR1(1) Freescale BLF3G21-30 Base station
MRF284LSR1(1) Freescale BLF3G21-30 Base station
MRF313 M/A- COM BLF871 Broadcast
MRF314 M/A- COM BLF881 Broadcast
MRF316 M/A- COM BLF871 Broadcast
MRF317 M/A- COM BLF871 Broadcast
MRF321 M/A- COM BLF871 Broadcast
MRF323 M/A- COM BLF871 Broadcast
MRF327 M/A- COM BLF871 Broadcast
MRF372 (3) Freescale BLF881 Base station
MRF373ALR1 (1) Freescale BLF871 Broadcast
MRF373ALR1 (2) Freescale BLF878 Base station
MRF373ALSR1 (1) Freescale BLF871 Broadcast
MRF374A (1) Freescale BLF881 Base station
MRF377H (1) Freescale BLF888 Broadcast
MRF377H (2) Freescale BLF878 Base station
MRF377H(2) Freescale BLF872 Broadcast
MRF392 M/A- COM BLF881 Broadcast
MRF393 M/A- COM BLF871 Broadcast
MRF421 M/A- COM BLF871 Broadcast
MRF422 M/A- COM BLF177 Broadcast
MRF426 M/A- COM BLF871 Broadcast
MRF428 M/A- COM BLF177 Broadcast
MRF429 M/A- COM BLF177 Broadcast
MRF448 M/A- COM BLF573S Broadcast
MRF454 M/A- COM BLF871 Broadcast
MRF455 M/A- COM BLF871 Broadcast
MRF577 Freescale PRF957 WB trs 1-4
MRF5811L Freescale BFG93A/X WB trs 1-4
MRF5P20180HR6(1) Freescale BLF6G20-180P Base station
MRF5P21045NR1 (1) Freescale BLD6G22L(S)-50 Base station
MRF5P21180HR6 (1) Freescale BLF6G22(LS)-180RN Base station
MRF5P21180HR6(1) Freescale BLF6G20-180P Base station
MRF5S19060N(2) Freescale BLF6G20-75 Base station
MRF5S19090HR3(1) Freescale BLF6G20-110 Base station
MRF5S19090HSR3(1) Freescale BLF6G20-110 Base station
MRF5S19100H (2) Freescale BLF7G20L(S)-140P Base station
MRF5S19100H(2) Freescale BLF6G20-110 Base station
MRF5S19130H (2) Freescale BLF6G20(LS)-110 Base station
MRF5S19130H(2) Freescale BLF6G20-140 Base station
MRF5S19150H (2) Freescale BLF6G20LS-140 Base station
Manufacturer type Manufacturer NXP type Product family
MRF5S19150H(2) Freescale BLF6G22-150P Base station
MRF5S21045N (2) Freescale BLD6G22L(S)-50 Base station
MRF5S21045N(2) Freescale BLF1822-10 Base station
MRF5S21090HR3(1) Freescale BLF6G22-100 Base station
MRF5S21090HSR3(1) Freescale BLF6G22-100 Base station
MRF5S21100HR3(1) Freescale BLF6G22-100 Base station
MRF5S21100HSR3(1) Freescale BLF6G22-100 Base station
MRF5S21130HR3(1) Freescale BLF6G22-130 Base station
MRF5S21130HSR3(1) Freescale BLF6G22-130 Base station
MRF5S21150H(2) Freescale BLF6G22-150P Base station
MRF5S9150H (2) Freescale BLF6G10(LS)-160RN Base station
MRF6P18190HR6(1) Freescale BLF6G20-180P Base station
MRF6P21190HR6 (1) Freescale BLF7G22LS-130 Base station
MRF6P21190HR6(1) Freescale BLF6G20-180P Base station
MRF6P3300H (2) Freescale BLF888 Base station
MRF6P3300H(2) Freescale BLF878 Broadcast
MRF6S18060N(2) Freescale BLF6G20-75 Base station
MRF6S18100N(2) Freescale BLF6G20-110 Base station
MRF6S18140H(2) Freescale BLF6G20-140 Base station
MRF6S19060N(2) Freescale BLF6G20-75 Base station
MRF6S19100H (2) Freescale BLF7G20L(S)-140P Base station
MRF6S19100H(2) Freescale BLF6G20-110 Base station
MRF6S19100N(2) Freescale BLF6G20-110 Base station
MRF6S19120H (2) Freescale BLF7G20L(S)-140P Base station
MRF6S19120H(2) Freescale BLF6G20-110 Base station
MRF6S19140H (2) Freescale BLF6G20LS-75 Base station
MRF6S19140H(2) Freescale BLF6G20-140 Base station
MRF6S19200H (2) Freescale BLF6G20-180PN,
BLF7G20L(S)-200 Base station
MRF6S20010 Freescale BLM6G22-30 Base station
MRF6S20010 Freescale BLM6G22-30G Base station
MRF6S20010N (2) Freescale BLM6G22-30 Base station
MRF6S20010N(2) Freescale BLF6G21-6 Base station
MRF6S20010N(2) Freescale BLF1822-10 Base station
MRF6S21050L(2) Freescale BLF6G22-45 Base station
MRF6S21060N (2) Freescale BLF6G22LS-75 Base station
MRF6S21060N(2) Freescale BLF6G22-75 Base station
MRF6S21100H (2) Freescale BLF6G22LS-100 Base station
MRF6S21100H(2) Freescale BLF6G22-100 Base station
MRF6S21100N (2) Freescale BLF6G22LS-100 Base station
MRF6S21100N(2) Freescale BLF6G22-100 Base station
MRF6S21140H (2) Freescale BLF6G22L(S)-130 Base station
MRF6S21140H(2) Freescale BLF6G22-130 Base station
MRF6S21190H Freescale BLF6G22-180P Base station
MRF6S21190H Freescale BLF6G22-180PN Base station
MRF6S21190H (2) Freescale BLF7G22L(S)-200 Base station
MRF6S23100H (2) Freescale BLF7G27L(S)-75P Base station
MRF6S23100H (2) Freescale BLF7G27L(S)-75P Base station
MRF6S27015N Freescale BLF6G27-10 Base station
MRF6S27015N (2) Freescale BLF6G27-10(G) Base station
MRF6S27015N (2) Freescale BLF6G27-10(G) Base station
MRF6S27050HR3 Freescale BLF6G27-45 Base station
MRF6S27050HSR3 Freescale BLF6G27S-45 Base station
MRF6S27085H Freescale BLF6G27LS-135 Base station
MRF6S27085H (2) Freescale BLF7G27L(S)-140 Base station
MRF6S27085HR3 Freescale BLF6G27-135 Base station
MRF6S27085HS Freescale BLF6G27LS-75 Base station
MRF6S27085HSR3 Freescale BLF6G27LS-135 Base station
MRF6V10010N (1) Freescale BLL6H0514-25 Microwave
MRF6V10250HS (1) Freescale BLA0912-250R Microwave
MRF6V12250H (2) Freescale BLA6H0912-500 Microwave
MRF6V12500H (2) Freescale BLA6H0912-500 Microwave
MRF6V14300H (2) Freescale BLL6H1214-500 Microwave
MRF6V2010N (2) Freescale BLF571 Base station
MRF6V2010N(2) Freescale BLF244 Broadcast
MRF6V2010NBR1(18a) Freescale BLF872 Broadcast
MRF6V2010NR1(18a) Freescale BLF871 Broadcast
MRF6V2150N (2) Freescale BLF871 Base station
MRF6V2150N(2) Freescale BLF177 Broadcast
MRF6V2150NBR1(18a) Freescale BLF882 Broadcast
MRF6V2150NR1(18a) Freescale BLF881 Broadcast
MRF6V2300N (2) Freescale BLF573S Base station
MRF6V2300N(2) Freescale BLF369 Broadcast
MRF6V2300N(2) Freescale BLF378 Broadcast
MRF6V3090N (4) Freescale BLF871 Broadcast
MRF6V4300N (2) Freescale BLF573S Base station
106 NXP Semiconductors RF Manual 15th edition
Manufacturer type Manufacturer NXP type Product family
MRF6VP11KH (1) Freescale BLF578 Base station
MRF6VP21KH (1) Freescale BLF578 Base station
MRF6VP2600H (1) Freescale BLF871 Base station
MRF6VP2600HR6(18o) Freescale BLF881 Broadcast
MRF6VP3450 Freescale BLF878 Broadcast
MRF6VP3450H (4) Freescale BLF878 Base station
MRF6VP41KH (2) Freescale BLF578 Base station
MRF7S15100H (2) Freescale BLF6G15L(S)-40BRN/
BLF6G15L(S)-250PBRN Base station
MRF7S18125AHS Freescale BLF6G20LS-140 Base station
MRF7S18170H (2) Freescale BLF7G20L(S)-200 Base station
MRF7S18170H(2) Freescale BLF6G22-180 Base station
MRF7S19080H (2) Freescale BLF6G20(LS)-110 Base station
MRF7S19080H(2) Freescale BLF6G20-110 Base station
MRF7S19080HS Freescale BLF6G20LS-75 Base station
MRF7S19100 Freescale BLF6G20LS-110 Base station
MRF7S19100N (2) Freescale BLF6G20LS-75 Base station
MRF7S19100N(2) Freescale BLF6G20-110 Base station
MRF7S19120N(1) Freescale BLF6G20-110 Base station
MRF7S19120NR1 (1) Freescale BLF6G20LS-140 Base station
MRF7S19170H (2) Freescale BLF6G20-180PN,
BLF7G20L(S)-200 Base station
MRF7S19170H(2) Freescale BLF6G20-180 Base station
MRF7S19210H Freescale BLF6G20-230PRN Base station
MRF7S21080H (2) Freescale BLF6G22LS-100 Base station
MRF7S21110H (2) Freescale BLF6G22L(S)-130 Base station
MRF7S21110HS Freescale BLF6G22LS-100 Base station
MRF7S21150H (2) Freescale BLF7G22LS-130 Base station
MRF7S21170 Freescale BLF6G22LS-100 Base station
MRF7S21170H (2) Freescale BLF6G22-180PN Base station
MRF7S21210H (2) Freescale BLF7G22L(S)-250P Base station
MRF7S27130H (2) Freescale BLF7G27L(S)-140 Base station
MRF7S35015HSR3 (1) Freescale BLS6G3135-20 Microwave
MRF7S35120HSR3 (1) Freescale BLS6G3135-120 Microwave
MRF7S38010H Freescale BLF6G38-10G Base station
MRF7S38010H (2) Freescale BLF6G38(S)-25 Base station
MRF7S38040H Freescale BLF6G38LS-50 Base station
MRF7S38040H (2) Freescale BLF6G38(LS)-50 Base station
MRF7S38040HR3 Freescale BLF6G28-50 Base station
MRF7S38040HSR3 Freescale BLF6G28LS-51 Base station
MRF8S18120H (2) Freescale BLF7G20L(S)-250P Base station
MRF9030L (2) Freescale BLF6G10(LS)-160RN Base station
MRF9030N (2) Freescale BLF6G10(LS)-160RN Base station
MRF9135L (2) Freescale BLF6G10(LS)-135RN Base station
MRF917 Freescale BFQ67W WB trs 1-4
MRF9200L (2) Freescale BLF6G10L(S)-260PRN Base station
MRF9210R3 (1) Freescale BLF6G10L(S)-260PRN Base station
MRF927 Freescale BFS25A WB trs 1-4
MRF9411L Freescale BFG520/X WB trs 1-4
MRF947 Freescale BFS520 WB trs 1-4
MRF947A Freescale PRF947 WB trs 1-4
MRF9511L Freescale BFG540/X WB trs 1-4
MRF957 Freescale PRF957 WB trs 1-4
MRFE6P3300H Freescale BLF878 Broadcast
MRFE6P3300H (2) Freescale BLF573 Broadcast
MRFE6S9125N Freescale BLF6G10LS-135R Base station
MRFE6S9125N (2) Freescale BLF6G10(LS)-135RN Base station
MRFE6S9130H (2) Freescale BLF6G10(LS)-135RN Base station
MRFE6S9135H (2) Freescale BLF6G10(LS)-200RN Base station
MRFE6S9135HS Freescale BLF6G10LS-135R Base station
MRFE6S9160H (2) Freescale BLF6G10(LS)-160RN Base station
MRFE6S9201H (2) Freescale BLF6G10(LS)-200RN Base station
MRFE6S9205HS Freescale BLF6G10LS-200RN Base station
MS1003 Microsemi BLF645 Broadcast
MS1004 Microsemi BLF888 Broadcast
MS1007 Microsemi BLF871 Broadcast
MS1008 Microsemi BLF871 Broadcast
MS1011 Microsemi BLF888 Broadcast
MS1051 Microsemi BLF871 Broadcast
MS1076 Microsemi BLF888 Broadcast
MS1078 Microsemi BLF871 Broadcast
MS1079 Microsemi BLF888 Broadcast
MS1204 Microsemi BLF645 Broadcast
MS1277 Microsemi BLF888 Broadcast
MS1278 Microsemi BLF888 Broadcast
MS1279 Microsemi BLF888 Broadcast
Manufacturer type Manufacturer NXP type Product family
MS1280 Microsemi BLF888 Broadcast
MS1329 Microsemi BLF878 Broadcast
MS1453 Microsemi BLF881 Broadcast
MS1503 Microsemi BLF871 Broadcast
MS1506 Microsemi BLF881 Broadcast
MS1507 Microsemi BLF881 Broadcast
MS1509 Microsemi BLF871 Broadcast
MS1511 Microsemi BLF878 Broadcast
MS1533 Microsemi BLF645 Broadcast
MS2001 Microsemi BLF6G22-45 Broadcast
MS2003 Microsemi BLF6G22-45 Broadcast
MS2003 Microsemi BLF6G22-45 Broadcast
MS2005 Microsemi BLF6G22-45 Broadcast
MS2010 Microsemi BLF6G22-45 Broadcast
MS2176 Microsemi BLF878 Broadcast
MS2200 Microsemi BLA6H0912-500 Microwave
MS2207 Microsemi BLA6H0912-500 Microwave
MS2210 Microsemi BLA6G1011-200R Microwave
MS2215 Microsemi BLF177 Broadcast
MS2267 Microsemi BLA6G1011-200R Microwave
MS2321 Microsemi BLL6H0514-25 Microwave
MS24221 Microsemi BLA6G1011-200R Microwave
MS2441 Microsemi BLAH0912-500 Microwave
MS2472 Microsemi BLAH0912-500 Microwave
MS2473 Microsemi BLA6H1011-600 Microwave
MS2553 Microsemi BLL6H0514-25 Microwave
MS2575 Microsemi BLL6H0514-25 Microwave
MS3024 Microsemi BLF6G22-45 Broadcast
MSC1015MP Microsemi BLL6H0514-25 Microwave
MSC1175M Microsemi BLA6G1011-200R Microwave
MSC1400M Microsemi BLAH0912-500 Microwave
MSC1450M Microsemi BLA6H0912-500 Microwave
MT4S200T Toshiba BFG424W WB trs 5-7
MT4S200U Toshiba BFG425W WB trs 5-7
MT4S34U Toshiba BFG410W WB trs 5-7
MV2109G ONSemicond. BB182LX Varicap
MW6IC2240N (2) Freescale BLF6G22LS-75 Base station
MW6S004NT1 (1) Freescale BLF6G21-10G Base station
MW6S010N (2) Freescale BLL6H0514-25 Microwave
MW7IC2725GNR1 Freescale BLF6G27-10G Base station
MW7IC2725N Freescale BLF6G27-10G Base station
MW7IC2725N Infineon BLF6G27-10G Base station
MW7IC2725NB Freescale BLF6G27-10 Base station
MW7IC2725NR1 Freescale BLF6G27-10 Base station
MW7IC2750GNR1 Freescale BLF6G27LS-75 Base station
MW7IC2750N (3) Freescale BLF6G27(LS)-75 Base station
MW7IC2750NR1 Freescale BLF6G27-75 Base station
MW7IC3825GN Freescale BLF6G38S-25 Base station
MW7IC3825N Freescale BLF6G38-25 Base station
MW7IC3825N (3) Freescale BLF6G38(S)-25 Base station
MW7IC3825NB Freescale BLF6G38-25 Base station
MW7IC915N (1) Freescale BLF6G10L(S)-260PRN Base station
NESG3032M14 NEC BFU725F WB trs 5-7
OS8740230W RFMD BGO807C CATV OR
PD55012-E ST BLF571 Broadcast
PD55025-E ST BLF571 Broadcast
PD55035-E ST BLF571 Broadcast
PD57018-E ST BLL6H0514-25 Microwave
PD57030-E ST BLL6H0514-25 Microwave
PD57045-E ST BLL6H0514-25 Microwave
PD57060-E ST BLL6H0514-25 Microwave
PD57070-E ST BLL6H0514-25 Microwave
PD85015-E ST BLF571 Broadcast
PD85025C ST BLF571 Broadcast
PD85025-E ST BLF571 Broadcast
PD85035C ST BLF571 Broadcast
PD85035-E ST BLF571 Broadcast
PRF134 POLYFET BLF242 Broadcast
PRF134 Infineon BLF242 Broadcast
PRF136 POLYFET BLF244 Broadcast
PRF136 Infineon BLF244 Broadcast
PRF947B Motorola PRF947 WB trs 1-4
PRF947B Infineon PRF947 WB trs 1-4
PTF 041501E - 150 W Infineon BLF881S Broadcast
PTF 041501F - 150 W Infineon BLF881S Broadcast
PTF 080101M - 10 W Infineon BLF571 Broadcast
107NXP Semiconductors RF Manual 15th edition
Cross-references
& replacements
Manufacturer type Manufacturer NXP type Product family
PTF 080101S - 10 W Infineon BLF571 Broadcast
PTF 081301E - 130 W Infineon BLF881 Broadcast
PTF 180101S - 10 W Infineon BLF6G20-40 Base station
PTF 191601E - 160 W Infineon BLF7G20L(S)-300P Base station
PTF 210101M - 10 W Infineon BLD6G22L(S)-50 Base station
PTF 210451E - 45 W Infineon BLF7G22L(S)-200 Base station
PTF 210451F - 45 W Infineon BLF7G22L(S)-200 Base station
PTF 240101S - 10 W Infineon BLF7G27L(S)-100 Base station
PTF041501E-150 W Infineon BLF647 Broadcast
PTF041501E-150 W Infineon BLF647 Broadcast
PTF041501F-150 W Infineon BLF647 Broadcast
PTF041501F-150 W Infineon BLF647 Broadcast
PTF080101M-10 W Infineon BLF1043 Base station
PTF080101M-10 W Infineon BLF1043 Base station
PTF080101S-10 W Infineon BLF1043 Base station
PTF080101S-10 W Infineon BLF1043 Base station
PTF081301E-130 W Infineon BLF4G10-120 Base station
PTF081301E-130 W Infineon BLF4G10-120 Base station
PTF081301F-130 W Infineon BLF4G10-120 Base station
PTF081301F-130 W Infineon BLF4G10-120 Base station
PTF082001E-200 W Infineon BLF6G10-200 Base station
PTF082001E-200 W Infineon BLF6G10-200 Base station
PTF180101 Freescale BLF6G21-10G Base station
PTF180101 Infineon BLF6G21-10G Base station
PTFA 041501E – 175 W Infineon BLF888 Broadcast
PTFA 041501F – 175 W Infineon BLF888 Broadcast
PTFA 041501GL - 175 W Infineon BLF888 Broadcast
PTFA 041501HL - 175 W Infineon BLF888 Broadcast
PTFA 043002E - 300 W Infineon blf573 Broadcast
PTFA 070601E - 60 W Infineon BLF878 Broadcast
PTFA 070601F - 60 W Infineon BLF878 Broadcast
PTFA 072401EL - 240 W Infineon BLF573 Broadcast
PTFA 072401FL - 240 W Infineon BLF573 Broadcast
PTFA 080551E - 55 W Infineon BLF878 Broadcast
PTFA 080551F - 55 W Infineon BLF878 Broadcast
PTFA 081501E - 150 W Infineon BLF881 Broadcast
PTFA 081501F - 150 W Infineon BLF881 Broadcast
PTFA 082201E - 220 W Infineon BLF573 Broadcast
PTFA 082201F - 220 W Infineon BLF573 Broadcast
PTFA 091201E - 120 W Infineon BLF881 Broadcast
PTFA 091201F - 120 W Infineon BLF881 Broadcast
PTFA 091201GL - 120 W Infineon BLF881 Broadcast
PTFA 091201HL - 120 W Infineon BLF881 Broadcast
PTFA 092201E - 220 W Infineon BLF573 Broadcast
PTFA 092201F - 220 W Infineon BLF573 Broadcast
PTFA 092211EL - 250 W Infineon BLF573 Broadcast
PTFA 092211FL - 250 W Infineon BLF573 Broadcast
PTFA 092213 EL - 250 W Infineon BLF573 Broadcast
PTFA 092213 FL - 250 W Infineon BLF573 Broadcast
PTFA 142401EL - 240 W Infineon BLF6G15L(S)-250PBRN Base station
PTFA 142401FL - 240 W Infineon BLF6G15L(S)-250PBRN Base station
PTFA 180701E - 70 W Infineon BLF6G20(LS)-110 Base station
PTFA 180701F - 70 W Infineon BLF6G20(LS)-110 Base station
PTFA 181001E - 100 W Infineon BLF6G20(LS)-180RN Base station
PTFA 181001F - 100 W Infineon BLF6G20(LS)-180RN Base station
PTFA 181001GL - 100 W Infineon BLF6G20(LS)-180RN Base station
PTFA 191001E - 100 W Infineon BLF6G20(LS)-110 Base station
PTFA 191001F - 100 W Infineon BLF6G20(LS)-110 Base station
PTFA 192001E - 200 W Infineon BLF6G20-180PN Base station
PTFA 192001F - 200 W Infineon BLF6G20-180PN Base station
PTFA 192401E - 240 W Infineon BLF6G20-180PN Base station
PTFA 192401F - 240 W Infineon BLF6G20-180PN Base station
PTFA 210301E - 30 W Infineon BLD6G22L(S)-50 Base station
PTFA 210701E - 70 W Infineon BLF6G22LS-75 Base station
PTFA 210701F - 70 W Infineon BLF6G22LS-75 Base station
PTFA 211001E - 100 W Infineon BLF6G22LS-100 Base station
PTFA 211801E - 180 W Infineon BLF7G22L(S)-250P Base station
PTFA 211801F - 180 W Infineon BLF7G22L(S)-250P Base station
PTFA 212001E - 200 W Infineon BLF6G22-180PN Base station
PTFA 212001F - 200 W Infineon BLF6G22-180PN Base station
PTFA 212002E - 200 W Infineon BLF7G22LS-130 Base station
PTFA 212401E - 240 W Infineon BLF6G22-180PN Base station
PTFA 212401F - 240 W Infineon BLF6G22-180PN Base station
PTFA 240451E - 45 W Infineon BLF7G27L(S)-100 Base station
PTFA 260451E - 45 W Infineon BLF6G27(LS)-75 Base station
PTFA 260851E - 85 W Infineon BLF6G27L(S)-45BN Base station
Manufacturer type Manufacturer NXP type Product family
PTFA 260851F - 85 W Infineon BLF6G27(LS)-135 Base station
PTFA 261301E - 130 W Infineon BLF7G27L(S)-200P Base station
PTFA 261301F - 130 W Infineon BLF7G27L(S)-100 Base station
PTFA 261702E - 170 W Infineon BLF7G27L(S)-140 Base station
PTFA043002E-300 W Infineon BLF878 Broadcast
PTFA043002E-300 W Infineon BLF878 Broadcast
PTFA080551E-55 W Infineon BLF6G10-45 Base station
PTFA080551F-55 W Infineon BLF6G10-45 Base station
PTFA081501E-150 W Infineon BLF6G10-160 Base station
PTFA081501F-150 W Infineon BLF6G10-160 Base station
PTFA091201E-120 W Infineon BLF4G10-120 Base station
PTFA091201F-120 W Infineon BLF4G10-120 Base station
PTMA 080152M - 20 W Infineon BLF871 Broadcast
PTMA 080302M - 40 W Infineon BLF881 Broadcast
PTMA 210452EL - 45 W Infineon BLF6G22(S)-45 Base station
PTMA 210452FL - 45 W Infineon BLF6G22(S)-45 Base station
PZFJ108 Standard J108 FET
PZFJ109 Standard J109 FET
PZFJ110 Standard J110 FET
R0605250L Standard BGY66B CATV RA
R0605250L RFMD BGS67A CATV RA
R0605300L Standard BGY68 CATV RA
R0605300L RFMD BGY68 CATV RA
R1005250L RFMD BGY66B CATV RA
R2005200P12 RFMD BGY67 CATV RA
R2005240 Standard BGY67A CATV RA
R2005240 RFMD BGY67A CATV RA
R2005240P12 RFMD BGY67A CATV RA
R2005350L RFMD BGR269 CATV RA
RN142G Rohm BAP1321-03 PIN diode
RN142S Rohm BAP1321-02 PIN diode
RN242CS Rohm BAP51LX PIN diode
RN731V Rohm BAP50-03 PIN diode
RN739D Rohm BAP50-04 PIN diode
RN739F Rohm BAP50-04W PIN diode
S10040200P RFMD CGY1041 CATV PP
S10040220GT RFMD CGY1041 CATV PP
S10040220P RFMD CGY1041 CATV PP
S10040230GT RFMD CGY1043 CATV PP
S10040240P RFMD CGY1043 CATV PP
S10040280GT RFMD CGY1047 CATV PP
S10040340 RFMD CGY1034 CATV PP
S505T Vishay BF1101 FET
S505TR Vishay BF1101R FET
S505TRW Vishay BF1101WR FET
S5540220 Standard BGY587 CATV PPA
S595T Vishay BF1105 FET
S595TR Vishay BF1105R FET
S595TRW Vishay BF1105WR FET
S7540185 Standard BGY785A CATV PPA
S7540215 Standard BGY787 CATV PPA
S8740180GT RFMD BGY885A CATV PP
S8740190 Standard BGD812 CATV PD
S8740190 RFMD BGY885A CATV PP
S8740200P RFMD BGY887 CATV PP
S8740220 Standard BGD814 CATV PD
S8740220GT RFMD BGY887 CATV PP
S8740220P RFMD BGY887 CATV PP
S8740230 Standard BGD816L CATV PD
S8740240GT RFMD BGY887 CATV PP
S8740240P RFMD BGY887 CATV PP
S8740240P12 RFMD BGY887 CATV PP
S8740260GT RFMD CGY887A CATV PP
S8740280GT RFMD CGY887B CATV PP
S8740340 RFMD CGY888C CATV PP
S8740340PT RFMD CGY888C CATV PP
S949T Vishay BF1109 FET
S949TR Vishay BF1109R FET
S949TRW Vishay BF1109WR FET
S974T Vishay BF1109 FET
S974T-GS08 Vishay BF1109 FET
S974TR Vishay BF1109R FET
S974TR-GS08 Vishay BF1109R FET
S974TRW Vishay BF1109WR FET
S974TRW-GS08 Vishay BF1109WR FET
SA701 POLYFET BLF145 Broadcast
108 NXP Semiconductors RF Manual 15th edition
Manufacturer type Manufacturer NXP type Product family
SA701 POLYFET BLF245 Broadcast
SA741 POLYFET BLF175 Broadcast
SD1018 Microsemi BLF881 Broadcast
SD1018-06 Microsemi BLF881 Broadcast
SD1019-05 Microsemi BLF645 Broadcast
SD1422 Microsemi BLF871 Broadcast
SD1485 Microsemi BLF888 Broadcast
SD56120 ST BLF871 Broadcast
SD56120M ST BLF881 Broadcast
SD57030 ST BLL6H0514-25 Microwave
SD57030-01 ST BLL6H0514-25 Microwave
SD57120 ST BLF578 Broadcast
SD702 POLYFET BLF246B Broadcast
SDV701Q AUK BB179 Varicap
SDV704Q AUK BB178 Varicap
SDV705Q AUK BB182 Varicap
SE701 POLYFET BLF245B Broadcast
SGA8343Z Sirenza BFG425W WB trs 5-7
SK701 POLYFET BLF544B Broadcast
SK701 POLYFET BLF545 Broadcast
SK702 POLYFET BLF546 Broadcast
SM341 POLYFET BLF177 Broadcast
SM704 POLYFET BLF147 Broadcast
SM704 POLYFET BLF246 Broadcast
SMP1302-004 Skyworks BAP50-05 PIN diode
SMP1302-005 Skyworks BAP50-04 PIN diode
SMP1302-011 Skyworks BAP50-03 PIN diode
SMP1302-074 Skyworks BAP50-05W PIN diode
SMP1302-075 Skyworks BAP50-04W PIN diode
SMP1302-079 Skyworks BAP50-02 PIN diode
SMP1304-001 Skyworks BAP70-03 PIN diode
SMP1304-011 Skyworks BAP70-03 PIN diode
SMP1307-001 Skyworks BAP70-03 PIN diode
SMP1307-011 Skyworks BAP70-03 PIN diode
SMP1320-004 Skyworks BAP65-05 PIN diode
SMP1320-011 Skyworks BAP65-03 PIN diode
SMP1320-074 Skyworks BAP65-05W PIN diode
SMP1321-001 Skyworks BAP1321-03 PIN diode
SMP1321-005 Skyworks BAP1321-04 PIN diode
SMP1321-011 Skyworks BAP1321-03 PIN diode
SMP1321-075 Skyworks BAP1321-04 PIN diode
SMP1321-079 Skyworks BAP1321-02 PIN diode
SMP1322-004 Skyworks BAP65-05 PIN diode
SMP1322-011 Skyworks BAP65-03 PIN diode
SMP1322-074 Skyworks BAP65-05W PIN diode
SMP1322-079 Skyworks BAP65-02 PIN diode
SMP1340-011 Skyworks BAP63-03 PIN diode
SMP1340-079 Skyworks BAP63-02 PIN diode
SMP1352-011 Skyworks BAP64-03 PIN diode
SMP1352-079 Skyworks BAP64-02 PIN diode
SMV1235-004 Skyworks BB181 Varicap
SMV1236-004 Skyworks BB156 Varicap
SR341 POLYFET BLF378 Broadcast
SR341 POLYFET BLF278 Broadcast
SR401 POLYFET BLF248 Broadcast
SR401 POLYFET BLF348 Broadcast
SR401 POLYFET BLF368 Broadcast
SR703 POLYFET BLF547 Broadcast
SR704U POLYFET BLF548 Broadcast
SST111 Standard PMBFJ111 FET
SST112 Standard PMBFJ112 FET
SST113 Standard PMBFJ113 FET
SST174 Standard PMBFJ174 FET
SST175 Standard PMBFJ175 FET
SST176 Standard PMBFJ176 FET
SST177 Standard PMBFJ177 FET
SST201 Standard BFT46 FET
SST202 Standard BFR31 FET
SST203 Standard BFR30 FET
SST308 Standard PMBFJ308 FET
SST309 Standard PMBFJ309 FET
SST310 Standard PMBFJ310 FET
SST4391 Standard PMBF4391 FET
SST4392 Standard PMBF4392 FET
SST4393 Standard PMBF4393 FET
SST4856 Standard BSR56 FET
Manufacturer type Manufacturer NXP type Product family
SST4857 Standard BSR57 FET
SST4859 Standard BSR56 FET
SST4860 Standard BSR57 FET
SST4861 Standard BSR58 FET
ST704 POLYFET BLF346 Broadcast
ST744 POLYFET BLF276 Broadcast
ST744 POLYFET BLF277 Broadcast
SVC201SPA Sanyo BB187 Varicap
SXA-389B RFMD BGA7124 MMIC
SXA-389B RFMD BGA7024 MMIC
TAN150 Microsemi BLF177 Broadcast
TAN250A Microsemi BLA6G1011-200R Microwave
TAN300 Microsemi BLA6G1011-200R Microwave
TBB1016 Renesas BF1204 FET
TCS450 Microsemi BLA6H0912-500 Microwave
TCS800 Microsemi BLA6H1011-600 Microwave
TMF3201J AUK BF1204 FET
TMF3202Z AUK BF1202WR FET
TMPF4091 Standard PMBF4391 FET
TMPF4092 Standard PMBF4392 FET
TMPF4093 Standard PMBF4393 FET
TMPF4391 Standard PMBF4391 FET
TMPF4392 Standard PMBF4392 FET
TMPF4393 Standard PMBF4393 FET
TMPFB246A Standard BSR56 FET
TMPFB246B Standard BSR57 FET
TMPFB246C Standard BSR58 FET
TMPFJ111 Standard PMBFJ111 FET
TMPFJ112 Standard PMBFJ112 FET
TMPFJ113 Standard PMBFJ113 FET
TMPFJ174 Standard PMBFJ174 FET
TMPFJ175 Standard PMBFJ175 FET
TMPFJ176 Standard PMBFJ176 FET
TMPFJ177 Standard PMBFJ177 FET
TPR400 Microsemi BLAH0912-500 Microwave
TPR500 Microsemi BLA6H0912-501 Microwave
TPR500A Microsemi BLA6H0912-502 Microwave
TSDF54040 Vishay BF1102 FET
TSDF54040-GS08 Vishay BF1102 FET
TSDF54040X-GS08 Vishay BF1102 FET
TSDF54040XR-GS08 Vishay BF1102R FET
UF2805B M/A- COM BLF871 Broadcast
UF28100H M/A- COM BLF871 Broadcast
UF28100M M/A- COM BLF871 Broadcast
UF28100V M/A- COM BLF871 Broadcast
UF2810P M/A- COM BLF871 Broadcast
UF28150J M/A- COM BLF881 Broadcast
UF2815B M/A- COM BLF871 Broadcast
UF2820P M/A- COM BLF871 Broadcast
UF2820R M/A- COM BLF871 Broadcast
UF2840G M/A- COM BLF881 Broadcast
UF2840P M/A- COM BLF881 Broadcast
UMIL100 Microsemi BLF871 Broadcast
UMIL100A Microsemi BLF871 Broadcast
UMIL60 Microsemi BLF878 Broadcast
UMIL80 Microsemi BLF878 Broadcast
uPC2709 NEC BGA2709 MMIC
uPC2711 NEC BGA2711 MMIC
uPC2712 NEC BGA2712 MMIC
uPC2745 NEC BGA2001 MMIC
uPC2746 NEC BGA2001 MMIC
uPC2748 NEC BGA2748 MMIC
uPC2771 NEC BGA2771 MMIC
uPC8112 NEC BGA2022 MMIC
UTV200 Microsemi BLF571 Broadcast
UTV8100B Microsemi BLF645 Broadcast
VAM80 Microsemi BLF878 Broadcast
VMIL100 Microsemi BLF645 Broadcast
VRF148A Microsemi BLF881 Broadcast
VRF150 Microsemi BLF177 Broadcast
VRF151 Microsemi BLF177 Broadcast
VRF151G Microsemi BLF878 Broadcast
109NXP Semiconductors RF Manual 15th edition
Cross-references
& replacements
NXP discontinued type Product family NXP Replacement type NXP
BA277-01 BS diode BA277
BA792 BS diode BA591
BAP142L PIN diode BAP142LX
BAP51-01 PIN diode BAP51LX
BAP51L PIN diode BAP51LX
BAP55L PIN diode BAP55LX
BB132 Varicap BB152
BB145 Varicap BB145B
BB145B-01 Varicap BB145B
BB151 Varicap BB135
BB157 Varicap BB187
BB178L Varicap BB178LX
BB179BL Varicap BB179BLX
BB179L Varicap BB179LX
BB181L Varicap BB181LX
BB182B Varicap BB182
BB182L Varicap BB182LX
BB187L Varicap BB187LX
BB190 Varicap BB149
BB202L Varicap BB202LX
BB804 Varicap BB207
BBY42 Varicap BBY40
BF1203 FET BF1203
BF689K WB trs BFS17
BF763 WB trs BFS17
BF851A FET BF861A
BF851C FET BF861C
BF992/01 FET BF992
BFC505 WB trs BFM505
BFC520 WB trs BFM520
BFET505 WB trs BFM505
BFET520 WB trs BFM520
BFG17A WB trs BFS17A
BFG197 WB trs BFG198
BFG197/X WB trs BFG198
BFG25AW/XR WB trs BFG25AW/X
BFG410W/CA WB trs BFG410W
BFG425W/CA WB trs BFG425W
BFG505/XR WB trs BFG505/X
BFG505W/XR WB trs BFG505
BFG520W/XR WB trs BFG520W/X
BFG590/XR WB trs BFG590/X
BFG590W WB trs BFG590
BFG590W/XR WB trs BFG590
BFG67/XR WB trs BFG67
BFG92A WB trs BFG92A/X
BFG92A/XR WB trs BFG92A/X
BFG93A/XR WB trs BFG93A/X
BFQ34/01 WB trs BFG35
BFR92 WB trs BFR92A
BFR92AR WB trs BFR92A
BFR92AT WB trs BFR92AW
BFR93 WB trs BFR92A
BFR93AT WB trs BFR93AW
BFR93R WB trs BFR93A
BFU510 WB trs BFU725F/N1
BFU540 WB trs BFU725F/N1
NXP discontinued type Product family NXP Replacement type NXP
BFU725F WB trs BFU725F/N1
BGA2031 WB trs BGA2031/1
BGD102/02 CATV BGD502
BGD102/04 CATV BGD502
BGD104 CATV BGD704
BGD104/04 CATV BGD704
BGD502/01 CATV BGD502
BGD502/03 CATV BGD502
BGD502/05 CATV BGD502
BGD502/07 CATV BGD502
BGD502/6M CATV BGD702
BGD502/C7 CATV BGD502
BGD502/R CATV BGD502
BGD504 CATV BGD704
BGD504/01 CATV BGD704
BGD504/02 CATV BGD704
BGD504/09 CATV BGD704
BGD602 CATV BGD702
BGD602/02 CATV BGD702
BGD602/07 CATV BGD702
BGD602/09 CATV BGD702
BGD602/14 CATV BGD702
BGD602D CATV BGD712
BGD702D CATV BGD712
BGD702D/08 CATV BGD712
BGD704/01 CATV BGD704
BGD704/07S CATV BGD704
BGD704/S9 CATV BGD704
BGD704N CATV BGD714
BGD802/09 CATV BGD802
BGD802N CATV BGD812
BGD802N/07 CATV BGD812
BGD804N CATV BGD814
BGD804N/02 CATV BGD814
BGD902 CATV BGD812
BGD902/07 CATV BGD902
BGD902L CATV BGD812
BGD904 CATV BGD814
BGD904/02 CATV BGD904
BGD904/07 CATV BGD904
BGD904L CATV BGD814
BGD906 CATV CGD942C
BGE788 CATV BGE788C
BGE847BO CATV BGO827
BGE847BO/FC CATV BGO827/SC0
BGE847BO/FC0 CATV BGO827/SC0
BGE847BO/FC0 CATV BGO827/SC0
BGE847BO/FC1 CATV BGO827/SC0
BGE847BO/SC CATV BGO827/SC0
BGE847BO/SC0 CATV BGO827/SC0
BGE887BO CATV BGO827
BGE887BO/FC CATV BGO827/SC0
BGE887BO/FC1 CATV BGO827/SC0
BGE887BO/SC CATV BGO827/SC0
BGO807 CATV BGO807C
BGO847/01 CATV BGO847
BGO847/01 CATV BGO847
5.2 Cross-references: NXP discontinued types versus NXP replacement types
In alphabetical order of manufacturer discontinued type
Abbreviations:
BS diode Band switch diode
CATV Community antenna television system
FET Field effect transistor
Varicap Varicap diode
WB trs Wideband transistor
RFP trs RF Power transistor
110 NXP Semiconductors RF Manual 15th edition
NXP discontinued type Product family NXP Replacement type NXP
BGO847/FC0 CATV BGO827/SC0
BGO847/FC01 CATV BGO827/SC0
BGO847/SC0 CATV BGO827/SC0
BGQ34/01 WB trs BFG35
BGU2003 WB trs BGA2003
BGX885/02 CATV BGX885N
BGY1085A/07 CATV BGY1085A
BGY584A CATV BGY585A
BGY585A/01 CATV BGY585A
BGY586 CATV BGY587
BGY586/05 CATV BGY587
BGY587/01 CATV BGY587
BGY587/02 CATV BGY587
BGY587/07 CATV BGY587
BGY587/09 CATV BGY587
BGY587B/01 CATV BGY587B
BGY587B/02 CATV BGY587B
BGY587B/09 CATV BGY587B
BGY588 CATV BGY588N
BGY588/04 CATV BGY588N
BGY66B/04 CATV BGY66B
BGY67/04 CATV BGY67
BGY67/09 CATV BGY67
BGY67/14 CATV BGY67
BGY67/19 CATV BGY67
BGY67A/04 CATV BGY67A
BGY67A/14 CATV BGY67A
BGY68/01 CATV BGY68
BGY685A/07 CATV BGY685A
BGY685AD CATV BGY785A
BGY685AL CATV BGY785A
BGY687/07 CATV BGY687
BGY687/14 CATV BGY687
BGY687B CATV BGE787B
BGY687B/02 CATV BGE787B
BGY785A/07 CATV BGY785A
BGY785A/09 CATV BGY785A
BGY785AD CATV BGY785A
BGY785AD/06 CATV BGY785A
BGY785AD/8M CATV BGY885A
BGY785AD/8M CATV BGY885A
BGY787/02 CATV BGY787
BGY787/07 CATV BGY787
BGY787/09 CATV BGY787
BGY847BO CATV BGO827
BGY847BO/SC CATV BGO827/SC0
BGY84A CATV BGY585A
BGY84A/04 CATV BGY585A
BGY84A/05 CATV BGY585A
BGY85 CATV BGY585A
BGY85A CATV BGY585A
BGY85A/04 CATV BGY585A
BGY85A/05 CATV BGY585A
BGY85H/01 CATV BGY585A
BGY86 CATV BGY587
BGY86/05 CATV BGY587
BGY87 CATV BGY587
BGY87/J1 CATV BGY587
BGY87B CATV BGY587B
BGY88 CATV BGY588N
BGY88/04 CATV BGY588N
BGY88/04 CATV BGY588N
BGY88/07 CATV BGY588N
BGY887/02 CATV BGY887
BGY887BO CATV BGO827
BGY887BO/FC CATV BGO827/FC0
BGY887BO/SC CATV BGO827/SC0
BLC6G22-100 RFP trs BLF6G22-100
BLF1822-10 RFP trs BLF6G21-10G
BLF2043 RFP trs BLF6G21-10G
BLF2045 RFP trs BLF6G20-45BLF6G22-45
BLF4G08LS-160A RFP trs BLF6G10LS-160RN
BLF4G08LS-160A RFP trs BLF6G10LS-160RN
BLS2731-110T RFP trs BLS6G2731-120
BLS2731-110 RFP trs BLS6G2731-120
BLS2731-20 RFP trs BLS6G2731-6G
NXP discontinued type Product family NXP Replacement type NXP
BLS2731-50 RFP trs BLS6G2731-6G
BLF3G22-30 RFP trs BLF6G22-45
CGD914 CATV CGD1042H
CGY887A CATV CGY1043
CGY887B CATV CGY1047
GD923 CATV CGD942C
OM7650 CATV BGY588C
OM7670 CATV BGE788C
ON4520/09 CATV BGY687
ON4520/2 CATV BGY687
ON4594/M5 CATV BGY585A
ON4749 CATV BGY588N
ON4831-2 CATV BGY885A
ON4869 CATV BGY587
ON4876 CATV BGY1085A
ON4890 CATV BGD712
ON4990 CATV BGD885
PMBT3640/AT WB trs BFS17
PN4392 FET PMBF4392
PN4393 FET PMBF4393
TFF1004HN Satellite IC TFF1014HN
111NXP Semiconductors RF Manual 15th edition
Packing and
packaging information
6.1 Packing quantities per package with relevant ordering code
6. Packing and packaging information
Package Package dimensions
L x W x H (mm)
Packing
quantity
Product
12NC ending
Packing
method
SOD323/SC-76 1.7 x 1.25 x 0.9 3,000 115 8 mm tape and reel
10,000 135 8 mm tape and reel
SOD523/SC-79 1.2 x 0.8 x 0.6
3,000 115 8 mm tape and reel
10,000 135 8 mm tape and reel
8,000 315 2 mm pitch tape and reel
20,000 335 2 mm pitch tape and reel
SOD882D 1.0x0.6x0.4 15000 315 reel
SOT23 2.9 x 1.3 x 0.9 3,000 215 8 mm tape and reel
10,000 235 8 mm tape and reel
SOT54 4.6 x 3.9 x 5.1
5,000 112 bulk, delta pinning
5,000 412 bulk, straight leads
10,000 116 tape and reel, wide pitch
10,000 126 tape ammopack, wide pitch
SOT89/SC-62 4.5 x 2.5 x 1.5 1,000 115 12 mm tape and reel
4,000 135 12 mm tape and reel
SOT115 44.5 x 13.65 x 20.4 100 112 4 tray/box
SOT121B 28.45 x 28.45 x 7.27 20 112 blister, tray
SOT143(N/R) 2.9 x 1.3 x 0.9 3,000 215 8 mm tape and reel
10,000 235 8 mm tape and reel
SOT223/SC-73 6.7 x 3.5 x 1.6 1,000 115 12 mm tape and reel
4,000 135 12 mm tape and reel
SOT307 10 x 10 x 1.75
1,500 518 13" tape and reel dry pack
96 551 1 tray dry pack
480 557 5 tray dry pack
SOT323/SC-70 2.0 x 1.25 x 0.9 3,000 115 8 mm tape and reel
10,000 135 8 mm tape and reel
SOT341 5.3 x 10.2 1,000 118 13'' tape and reel
658 112 tube
SOT343(N/R) 2.0 x 1.25 x 0.9 3,000 115 8 mm tape and reel
10,000 135 8 mm tape and reel
SOT343F 2.1 x 1.25 x 0.7 3,000 115 8 mm tape and reel
SOT360 6.5 x 4.4 x 0.9 2,500 118 16 mm tape and reel
SOT363/SC-88 2.0 x 1.25 x 0.9 3,000 115 8 mm tape and reel
10,000 135 8 mm tape and reel
SOT363 2.1 x 2.0 x 0.9 3,000 115 reel
10,000 135
SOT401 5 x 5 x 1.4 2,000 118 13" tape and reel
360 151 1 tray
SOT403 5.0 x 4.4 x 0.9 2,500 118 12 mm tape and reel
SOT416/SC-75 1.6 x 0.8 x 0.75 3,000 115 8 mm tape and reel
SOT467B 9.78 x 18.29 x 4.67 60 112 blister, tray
20 112 blister, tray
SOT467C 20.45 x 18.54 x 4.67 60 112 blister, tray
20 112 blister, tray
SOT502A 19.8 x 9.4 x 4.1 60 112 blister, tray
300 135 reel
112 NXP Semiconductors RF Manual 15th edition
Package Package dimensions
L x W x H (mm)
Packing
quantity
Product
12NC ending
Packing
method
SOT502B 19.8 x 9.4 x 4.1 60 112 blister, tray
100 118 reel
SOT538A 5.1 x 4.1 x 2.6 160 112 blister, tray
SOT539A 31.25 x 9.4 x 4.65 60 112 blister, tray
300 135 reel
SOT540A 21.85 x 10.2 x 5.4 60 112 blister, tray
SOT608A 10.1 x 10.1 x 4.2
60 112 blister, tray
60 112 blister, tray
300 135 reel
SOT608B 10.1 x 10.1 x 4.2
60 112 blister, tray
100 118 reel
300 135 reel
SOT616 4.0 x 4.0 x 0.85
6,000 118 12 mm tape and reel
1,500 115 8 mm tape and reel
100 551 tray
SOT617 5 x 5 x 0.85 6,000 118 Tape and reel
SOT618 6 x 6 x 0.85
4,000 118 13" tape and reel
1,000 515 7" tape and reel dry pack
490 551 1 tray dry pack
2,450 157 5 tray
SOT638 14 x 14 x 1
1,000 518 13" tape and reel dry pack
90 551 1 tray dry pack
450 557 5 tray dry pack
SOT650-1 3.0 x 3.0 x 0.85 6000 118 reel
SOT666 1.6 x 1.2 x 0.7 4,000 115 8 mm tape and reel
SOT684 8 x 8 x 0.85
1,000 518 13" tape and reel dry pack
260 151 1 tray
260 551 1 tray dry pack
1,300 157 5 tray dry pack
SOT724 8.7 x 3.9 x 1.47 2,500 118 16 mm tape and reel
SOT753 2.9 x 1.5 x 1.0 3,000 125 8 mm tape and reel
SOT763-1 2.5x3.5x0.85 3,000 115 reel
6,000 135
SOT778 6.0 x 6.0 x 0.85 490 551 tray
4,000 518 multiple trays
SOT822-1 15.9 x 11 x 3.6 180 127 tube
SOT834-1 15.9 x 11 x 3.15 180 127 tube
SOT886 1.45 x 1.0 x 0.5 5000 115 8 mm tape and reel
SOT891 1.0 x 1.0 x 0.5 5000 132 8 mm tape and reel
SOT908 3.0 x 3.0 x 0.85 6000 118 12 mm tape and reel
SOT922-1 17.4 x 9.4 x 3.88 60 112 blister, tray
SOT975B 6.5 x 6.5 x 3.3 180 112 blister, tray
100 118 Tape and reel
SOT975C 6.5 x 6.5 x 3.3 180 112 blister, tray
100 118 Tape and reel
SOT979A 31.25 x 10.2 x 5.3 60 112 blister, tray
SOT1110A 41.28 x 17.12 x 5.36 60 112 blister, tray
100 118 reel
SOT1110B 41.15 x 36.32 x 4.68 60 112 blister, tray
113NXP Semiconductors RF Manual 15th edition
Packing and
packaging information
SOT1112A 16.65 x 20.32 x 4.205 60 112 blister, tray
100 118 reel
SOT1112B 16.65 x 15.22 x 4.205 60 112 blister, tray
100 118 reel
SOT1120A 9.4 x 19.815 x 4.1 60 112 blister, tray
100 118 reel
SOT1120B 9.4 x 19.815 x 4.1 60 112 blister, tray
100 118 reel
SOT1121A 34.16 x 19.94 x 4.75 60 112 blister, tray
100 118 reel
SOT1121B 20.70 x 19.94 x 4.75 60 112 blister,tray
100 118 reel
SOT1121C 13.4 x 20.575 x 3.785 DEV DEV DEV
SOT1130A 20.45 x 17.12 x 4.65 60 112 blister, tray
SOT1130B 9.91 x 17.12 x 4.65 60 112 blister, tray
SOT1135A 20.45 x 19.94 x 4.65 60 112 blister, tray
100 118 reel
SOT1135B 16.65 x 9.78 x 4.205 60 112 blister, tray
100 118 reel
SOT1135C 16.65 x 9.78 x 4.205 60 112 blister, tray
100 118 reel
SOT1138 19.48 x 20.57 x 3.9 DEV DEV DEV
SOT1179 4.0 x 6.0 x 0.85 DEV DEV DEV
SOT1198-1 10.0 x 5.5 x 0.8 1000 115 reel
SOT1204 13.2 x 20.57 x 3.9 DEV DEV DEV
SOT1240B 21.60 x 20.575 x 3.875 DEV DEV DEV
SOT1240C 18.00 x 20.575 x 3.875 DEV DEV DEV
SOT1242B 22.60 x 32.45 x 4.455 DEV DEV DEV
SOT1242C 18.00 x 32.45 x 4.455 DEV DEV DEV
SOT1244B 19.43 x 20.575 x 3.875 DEV DEV DEV
SOT1244C 18.00 x 20.575 x 3.875 DEV DEV DEV
Package Package dimensions
L x W x H (mm)
Packing
quantity
Product
12NC ending
Packing
method
114 NXP Semiconductors RF Manual 15th edition
Marking code Type Package
10% BAT18 SOT23
13% BB207 SOT23
20% BF545A SOT23
21% BF545B SOT23
22% BF545C SOT23
24% BF556A SOT23
25% BF556B SOT23
26% BF556C SOT23
28% BF861A SOT23
29% BF861B SOT23
30% BF861C SOT23
31% BFR505 SOT23
32% BFR520 SOT23
33% BFR540 SOT23
34% BFT25A SOT23
38% PMBFJ108 SOT23
39% PMBFJ109 SOT23
40% PMBFJ110 SOT23
41% PMBFJ111 SOT23
42% PMBFJ112 SOT23
47% PMBFJ113 SOT23
48% PMBFJ308 SOT23
49% PMBFJ309 SOT23
50% PMBFJ310 SOT23
1 BA277 SOD523
2 BB182 SOD523
7 BA891 SOD523
8 BB178 SOD523
9 BB179 SOD523
%1W BAP51-05W SOT323
%3A BGA6289 SOT89
%4A BGA6489 SOT89
%5A BGA6589 SOT89
%6G PMBF4393 SOT23
%6J PMBF4391 SOT23
%6K BGA7024 SOT89
%6K PMBF4392 SOT23
%6L BGA7027 SOT89
%6S PMBFJ176 SOT23
%6W PMBFJ175 SOT23
%6X PMBFJ174 SOT23
%6Y PMBFJ177 SOT23
%AB BF1210 SOT363
%E7 BGA2800 SOT363
%E8 BGA2801 SOT363
%E9 BGA2815 SOT363
%EA BGA2816 SOT363
%EB BGA2850 SOT363
%EC BGA2865 SOT363
%ED BGA2866 SOT363
%M1 BF908 SOT143
%M2 BF908R SOT143
%M3 BF909 SOT143
%M4 BF909R SOT143
%M5 BF909A SOT143
%M6 BF909AR SOT143
%M7 BF904A SOT143
%M8 BF904AR SOT143
%M9 BSS83 SOT143
Marking code Type Package
%MA BF991 SOT143
%MB BF992 SOT143
%MC BF904 SOT143
%MD BF904R SOT143
%ME BFG505 SOT143
%MF BFG520 SOT143
%MG BFG540 SOT143
%MH BFG590 SOT143
%MK BFG505/X SOT143
%ML BFG520/X SOT143
%MM BFG540/X SOT143
%MN BFG590/X SOT143
%MP BFG520/XR SOT143
%MR BFG540/XR SOT143
%MS BFG10 SOT143
%MT BFG10/X SOT143
%MU BFG25A/X SOT143
%MV BFG67/X SOT143
%MW BFG92A/X SOT143
%MX BFG93A/X SOT143
%MY BF1100 SOT143
%MZ BF1100R SOT143
%VA BGU7041 SOT363
%VB BGU7042 SOT363
1B% BGA2717 SOT363
1C% BAP50-05 SOT23
1N% BAP70-04W SOT323
2A% BF862 SOT23
2L BF1208 SOT666
2N BF1206F SOT666
2R BF1207F SOT666
4A BF1208D SOT666
4K% BAP64-04 SOT23
4L% BAP50-04 SOT23
4W% BAP64-04W SOT323
5K% BAP64-05 SOT23
5W% BAP64-05W SOT323
6F% BAP1321-04 SOT23
6K% BAP64-06 SOT23
6W% BAP50-04W SOT323
7K% BAP65-05 SOT23
8K% BAP70-05 SOT23
A1 BA591 SOD323
A1 BB208-02 SOD523
A1 BGA2001 SOT343
A1 BAP64Q SOT753
A2 BAP70Q SOT753
A2 BAT18 SOT23
A2 BB184 SOD523
A2 BB208-03 SOD323
A2% BGA2022 SOT363
A3 BAP64-03 SOD323
A3 BB198 SOD523
A3 BGA2003 SOT343
A3% BGA2031/1 SOT363
A5 BAP51-03 SOD323
A5% BGA2011 SOT363
A6% BGA2012 SOT363
A7% BFG310W/XR SOT343
Marking code Type Package
A8 BAP50-03 SOD323
A8% BFG325W/XR SOT343
A8% PMBFJ620 SOT363
A9 BAP70-03 SOD323
AC BGU7005 SOT886
B3 BGU7003 SOT891
B6- BGA2715 SOT363
B6 BGU7007 SOT886
B6% BFU725F SOT343F
B7% BGA2716 SOT363
BC% BFQ591 SOT89
BFG135 BFG135 SOT223
BFG198 BFG198 SOT223
BFG31 BFG31 SOT223
BFG35 BFG35 SOT223
BFG541 BFG541 SOT223
BFG591 BFG591 SOT223
BFG94 BFG94 SOT223
BFG97 BFG97 SOT223
BLT50 BLT50 SOT223
BLT70 BLT70 SOT223
BLT80 BLT80 SOT223
BLT81 BLT81 SOT223
C1% BGM1011 SOT363
C2% BGM1012 SOT363
C4% BGM1013 SOT363
C5% BGM1014 SOT363
D1 BFU610F SOT343F
D2 BFU630F SOT343F
D2 BAP63-03 SOD323
D3 BFU660F SOT343F
D3 BAP65-03 SOD323
D4 BFU690F SOT343F
D4% BFR30/B SOT23
D5 BFU710F SOT343F
D6 BFU730F SOT343F
D7 BFU760F SOT343F
D8 BFU790F SOT343F
E1% BFS17 SOT23
E1% BFS17/FD SOT23
E1% BFS17W SOT323
E2% BFS17A SOT23
E2% BGA2712 SOT363
E3% BGA2709 SOT363
E6% BFG17A SOT23
FB BFQ19 SOT89
FF BFQ18A SOT89
FG BFQ149 SOT89
G2 BA278 SOD523
G2% BGA2711 SOT363
G3% BGA2748 SOT363
G4% BGA2771 SOT363
G5% BGA2776 SOT363
K1 BAP51-02 SOD523
K2 BAP51-05W SOD523
K4 BAP50-02 SOD523
K5 BAP63-02 SOD523
K6 BAP65-02 SOD523
K7 BAP1321-02 SOD523
6.2 Marking codes list
Search online on marking code: http://www.nxp.com/package/
In alphabetical order of marking code
In case a ‘%’ is given in the marking code, it means this type can be assembled at different assembly sites.
p = made in Hong-Kong
t = made in Malaysia
W = made in China
115NXP Semiconductors RF Manual 15th edition
Packing and
packaging information
Marking code Type Package
K8 BAP70-02 SOD523
K9 BB199 SOD523
L1 BB202LX SOD882D
L2 BAP51LX SOD882D
L2 BB202 SOD523
L2% BF1203 SOT363
L3 BB178LX SOD882D
L3% BF1204 SOT363
L4 BB179LX SOD882D
L4% BF1205 SOT363
L5 BB179BLX SOD882D
L6 BB181LX SOD882D
L6% BF1206 SOT363
L7 BB182LX SOD882D
L8 BB187LX SOD882D
L9% BF1208 SOT363
LA BF1201WR SOT343
LA% BF1201 SOT143
LB% BF1201R SOT143
LD% BF1202 SOT143
LE BF1202WR SOT343
LE% BF1202R SOT143
LF% BF1211 SOT143
LG% BF1212 SOT143
LH% BF1211R SOT143
LK% BF1212R SOT143
M08 PMBFJ308 SOT23
M09 PMBFJ309 SOT23
M1% BFR30 SOT23
M10 PMBFJ310 SOT23
M2% BF1207 SOT363
M2% BFR31 SOT23
M3% BFT46 SOT23
M33 BF861A SOT23
M34 BF861B SOT23
M35 BF861C SOT23
M4% BF1215 SOT363
M5% BF1216 SOT363
M6% BF1205C SOT363
M65 BF545A SOT23
M66 BF545B SOT23
M67 BF545C SOT23
M7% BF1218 SOT363
M84 BF556A SOT23
M85 BF556B SOT23
M86 BF556C SOT23
MA% BGA2802 SOT363
MB BF998WR SOT343
MB% BGA2803 SOT363
MC BF904WR SOT343
MC% BGA2851 SOT363
MD BF908WR SOT343
MD% BGA2869 SOT363
ME BF909WR SOT343
MF BF1100WR SOT343
MG BF909AWR SOT343
MG% BF994S SOT143
MH BF904AWR SOT343
MH% BF996S SOT143
MK BF1211WR SOT343
ML BF1212WR SOT343
MO% BF998 SOT143
MO% BF998R SOT143
N BB181 SOD523
N0 BFR505T SOT416
N0% BFM505 SOT363
N0% BFS505 SOT323
N1 BFG505W/X SOT343
N2 BFR520T SOT416
N2% BFM520 SOT363
N2% BFS520 SOT323
N3 BFG520W SOT343
N4 BFG520W/X SOT343
N4 BFQ540 SOT89
N4% BFS540 SOT323
N6% BFS25A SOT323
N7 BFG540W/X SOT343
Marking code Type Package
N8 BFG540W/XR SOT343
N9 BFG540W SOT343
N9% BAP70AM SOT363
NA BF1105WR SOT343
NA% BF1105R SOT143
NB BF1109WR SOT343
NB% BF1109R SOT143
NC BF1101WR SOT343
NC% BF1101R SOT143
ND BFG424W SOT343
ND% BF1101 SOT143
NE BFG424F SOT343
NE% BF1105 SOT143
NF% BF1109 SOT143
NG% BF1108 SOT143
NH% BF1108R SOT143
P08 PMBFJ108 SOT23
P09 PMBFJ109 SOT23
P1 BFG21W SOT343
P1 BB131 SOD323
P10 PMBFJ110 SOT23
P11 PMBFJ111 SOT23
P12 PMBFJ112 SOT23
P13 PMBFJ113 SOT23
P2% BFR92A SOT23
P2% BFR92AW SOT323
P3 BFG403W SOT343
P4 BFG410W SOT343
P5 BB135 SOD323
P5 BFG425W SOT343
P6 BFG480W SOT343
P7 BB147 SOD523
P8 BB148 SOD323
P9 BB149 SOD323
PB BB152 SOD323
PC BB153 SOD323
PE BB155 SOD323
PF BB156 SOD323
PL BB149A SOD323
R2% BFR93A SOT23
R2% BFR93AW SOT323
R5 BFR93AR SOT23
R7% BFR106 SOT23
R8% BFG93A SOT143
S BAP64-02 SOD523
S1% BFG310/XR SOT143
S2% BBY40 SOT23
S2% BFG325/XR SOT143
S3% BF1107 SOT23
S6% BF510 SOT23
S7% BF511 SOT23
S8% BF512 SOT23
S9% BF513 SOT23
SB% BF1214 SOT363
SC% BGU7031 SOT363
SC% BB201 SOT23
SD% BGU7032 SOT363
SE% BGU7033 SOT363
T5 BFG10W/X SOT343
UY BGU7004 SOT886
V1 BFG25AW/X SOT343
V1% BFT25 SOT23
V10 BFT25A SOT23
V2% BFQ67 SOT23
V2% BFQ67W SOT323
V3% BFG67 SOT143
V4% BAP64-06W SOT323
V6% BAP65-05W SOT323
V8 BAP1321-03 SOD323
VA BF1217WR SOT343
VA BF1217WR SOT343R
VB BF1118W SOT343
VC BF1118WR SOT343
VC BF1118WR SOT343R
VC% BF1118 SOT143
VD% BF1118R SOT143
VD% BF1118R SOT143R
Marking code Type Package
W1 BF1102 SOT363
W1% BFT92 SOT23
W1% BFT92W SOT323
W2% BF1102R SOT363
W4% BAP50-05W SOT323
W6% BAP51-04W SOT323
W7% BAP51-06W SOT323
W9% BAP63-05W SOT323
X BB187 SOD523
X1% BFT93 SOT23
X1% BFT93W SOT323
116 NXP Semiconductors RF Manual 15th edition
Abbreviations
7. Abbreviations
3-way Doherty design using 3 discrete transistors
AM Amplitude Modulation
ASIC Application Specific Integrated Circuit
ASYM Asymmetrical design of Doherty (main and
peak device are different)
BPF Band Pass Filter
BUC Block Upconverter
CATV Community Antenna Television
CDMA Code Division Multiple Access
CMMB Chinese Multimedia Mobile Broadcasting
CMOS Complementary Metal Oxide Semiconductor
CQS Customer Qualification Samples
DAB Digital Audio Broadcasting
DECT Digital Enhanced Cordless
Telecommunications
DiSEqC Digital Satellite Equipment Control
DSB Digital Signal Processor
DVB Digital Video Broadcasting
EDGE Enhanced Data Rates for GSM Evolution
ESD Electro Static Device
FET Field Effect Transistor
FM Frequency Modulation
GaAs Gallium Arsenide
GaN Gallium Nitride
Gen Generation
GPS Global Positioning System
GSM Global System for Mobile communications
HBT Heterojunction Bipolar Transistor
HDTV High Definition Television
HF High Frequency (3-30 MHz)
HFC Hybrid Fiber Coax
HFET Heterostructure Field Effect Transistor
HPA High Power Amplifier
HVQFN Plastic thermally enHanced Very thin Quad
Flat pack No leads
IF Intermediate Frequency
ISM Industrial, Scientific, Medical - reserved
frequency bands
LDMOS Laterally Diffused Metal-Oxide-Semiconductor
LNA Low Noise Amplifier
LNB Low Noise Block
LO Local Oscillator
LPF Low Pass Filter
MESFET Metal Semiconductor Field Effect Transistor
MMIC Monolithic Microwave Integrated Circuit
MMPP Main and peak devices realized separately in
halves of push-pull transistor
MPPM Main and peak device realized in same push-
pull transistor (2 times)
MoCA Multimedia over Coax Alliance
MOSFET Metal–Oxide–Semiconductor Field Effect
Transistor
MPA Medium Power Amplifier
MRI Magnetic Resonance Imaging
NF Noise Figure
NIM Network Interface Module
NMR Nuclear Magnetic Resonance
PA Power Amplifier
PAR Peak to Average Ratio
PEP Peak Envelope Power
pHEMT pseudomorphic High Electron Mobility
Transistor
PLL Phase Locked Loop
QUBiC Quality BiCMOS
RF Radio Frequency
RFS Release for Supply
RoHS Restriction of Hazardous Substances
Rx Receive
SARFT State Administration for Radio, Film and
Television
SER Serializer
SiGe:C Sillicon Germanium Carbon
SMATV Satellite Master Antenna Television
SMD Surface Mounted Device
SPDT Single Pole, Double Throw
SYM Symmetrical design of Doherty (main and peak
device are the same type of transistor)
TD-SCDMA Time Division-Synchronous Code Division
Multiple Access
TCAS Traffic Collision Avoidance Systems
TMA Tower Mounted Amplifier
TTFF Time to First Fix
Tx Transmit
UHF Ultra High Frequency (470-860 MHz)
UMTS Universal Mobile Telecommunications System
VCO Voltage Controlled Oscillator
VGA Variable Gain Amplifier
VHF Very High Frequency (30-300 MHz)
VoIP Voice over Internet Protocol
VSAT Very Small Aperture Terminal
WCDMA Wideband Code Division Multiple Access
WiMAX Worldwide Interoperability for Microwave
Access
WLAN Wireless Local Area Network
117NXP Semiconductors RF Manual 15th edition
Contacts
and web links
8. Contacts and web links
Authorized distributors
Asia Pacific:
http://www.nxp.com/profile/sales/asia_pacific_dist
Europe / Africa / Middle East:
http://www.nxp.com/profile/sales/europe_dist
North America:
http://www.nxp.com/profile/sales/northamerica_dist
Local NXP Offices
Asia Pacific:
http://www.nxp.com/profile/sales/asia_pacific
Europe / Africa / Middle East:
http://www.nxp.com/profile/sales/europe
North America:
http://www.nxp.com/profile/sales/northamerica
Web links
NXP Semiconductors:
http://www.nxp.com
NXP RF Manual web page:
http://www.nxp.com/rfmanual
NXP varicaps:
http://www.nxp.com/varicaps
NXP RF PIN diodes:
http://www.nxp.com/pindiodes
NXP RF schottky diodes:
http://www.nxp.com/rfschottkydiodes
NXP RF MMICs:
http://www.nxp.com/mmics
NXP RF wideband transistors:
http://www.nxp.com/rftransistors
NXP RF power & base stations:
http://www.nxp.com/rfpower
NXP RF FETs:
http://www.nxp.com/rffets
NXP RF CATV electrical & optical:
http://www.nxp.com/catv
NXP RF applications:
http://www.nxp.com/rf
NXP application notes:
http://www.nxp.com/all_appnotes
NXP cross-references:
http://www.nxp.com/products/xref
NXP packaging:
http://www.nxp.com/package
NXP end-of-life:
http://www.nxp.com/products/eol
NXP quality handbook:
http://www.standardics.nxp.com/quality/handbook
NXP literature:
http://www.nxp.com/products/discretes/documentation
NXP packaging:
http://www.nxp.com/package
NXP sales offices and distributors:
http://www.nxp.com/profile/sales
NXP high-speed converters
http://www.nxp.com/dataconverters
How to contact your authorized distributor or local NXP representative.
118 NXP Semiconductors RF Manual 15th edition
Abbreviations
Type Portfolio
chapter
1PS10SB82 3.2.4
1PS66SB17 3.2.4
1PS66SB82 3.2.4
1PS70SB82 3.2.4
1PS70SB84 3.2.4
1PS70SB85 3.2.4
1PS70SB86 3.2.4
1PS76SB17 3.2.4
1PS79SB17 3.2.4
1PS88SB82 3.2.4
ADC0801S040 3.8.1
ADC0804S series 3.8.1
ADC0808S series 3.8.1
ADC1002S020 3.8.1
ADC1003S series 3.8.1
ADC1004S series 3.8.1
ADC1005S060 3.8.1
ADC1006S series 3.8.1
ADC1010S series 3.8.1
ADC1015S series 3.8.1
ADC1112D125 3.8.1
ADC1113D125 3.8.1
ADC1113S125 3.8.1
ADC1115S125 3.8.1
ADC1206S series 3.8.1
ADC1207S080 3.8.1
ADC1210S series 3.8.1
ADC1212D series 3.8.1
ADC1213D series 3.8.1
ADC1213S series 3.8.1
ADC1215S series 3.8.1
ADC1410S series 3.8.1
ADC1412D series 3.8.1
ADC1413D series 3.8.1
ADC1413S series 3.8.1
ADC1415S series 3.8.1
ADC1610S series 3.8.1
ADC1613D series 3.8.1
ADC1613S series 3.8.1
BA277 3.2.3
BA591 3.2.3
BA891 3.2.3
BAP1321-02 3.2.2
BAP1321-03 3.2.2
BAP1321-04 3.2.2
BAP1321LX 3.2.2
BAP142LX 3.2.2
BAP50-02 3.2.2
BAP50-03 3.2.2
BAP50-04 3.2.2
BAP50-04W 3.2.2
BAP50-05 3.2.2
BAP50-05W 3.2.2
BAP50LX 3.2.2
BAP51-02 3.2.2
BAP51-03 3.2.2
BAP51-04W 3.2.2
BAP51-05W 3.2.2
BAP51-06W 3.2.2
BAP51LX 3.2.2
BAP55LX 3.2.2
BAP63-02 3.2.2
BAP63-03 3.2.2
BAP63-05W 3.2.2
BAP63LX 3.2.2
BAP64-02 3.2.2
BAP64-03 3.2.2
BAP64-04 3.2.2
BAP64-04W 3.2.2
BAP64-05 3.2.2
BAP64-05W 3.2.2
Type Portfolio
chapter
BAP64-06 3.2.2
BAP64-06W 3.2.2
BAP64LX 3.2.2
BAP64Q 3.2.2
BAP65-02 3.2.2
BAP65-03 3.2.2
BAP65-05 3.2.2
BAP65-05W 3.2.2
BAP65LX 3.2.2
BAP70-02 3.2.2
BAP70-03 3.2.2
BAP70-04W 3.2.2
BAP70-05 3.2.2
BAP70AM 3.2.2
BAP70Q 3.2.2
BAT17 3.2.4
BAT18 3.2.3
BB131 3.2.1
BB135 3.2.1
BB145B 3.2.1
BB148 3.2.1
BB149 3.2.1
BB149A 3.2.1
BB152 3.2.1
BB153 3.2.1
BB156 3.2.1
BB178 3.2.1
BB178LX 3.2.1
BB179 3.2.1
BB179B 3.2.1
BB179BLX 3.2.1
BB179LX 3.2.1
BB181 3.2.1
BB181LX 3.2.1
BB182 3.2.1
BB182LX 3.2.1
BB184 3.2.1
BB187 3.2.1
BB187LX 3.2.1
BB189 3.2.1
BB198 3.2.1
BB199 3.2.1
BB201 3.2.1
BB202 3.2.1
BB202LX 3.2.1
BB207 3.2.1
BB208-02 3.2.1
BB208-03 3.2.1
BBY40 3.2.1
BF1100 3.5.2
BF1100R 3.5.2
BF1100WR 3.5.2
BF1101 3.5.2
BF1101R 3.5.2
BF1101WR 3.5.2
BF1102(R) 3.5.2
BF1105 3.5.2
BF1105R 3.5.2
BF1105WR 3.5.2
BF1107 3.5.2
BF1108 3.5.2
BF1108R 3.5.2
BF1108W 3.5.2
BF1108WR 3.5.2
BF1109 3.5.2
BF1109R 3.5.2
BF1109WR 3.5.2
BF1118 3.5.2
BF1118R 3.5.2
BF1118W 3.5.2
BF1118WR 3.5.2
Type Portfolio
chapter
BF1201 3.5.2
BF1201R 3.5.2
BF1201WR 3.5.2
BF1202 3.5.2
BF1202R 3.5.2
BF1202WR 3.5.2
BF1203 3.5.2
BF1204 3.5.2
BF1205 3.5.2
BF1205C 3.5.2
BF1206 3.5.2
BF1206F 3.5.2
BF1207 3.5.2
BF1208 3.5.2
BF1208D 3.5.2
BF1210 3.5.2
BF1211 3.5.2
BF1211R 3.5.2
BF1211WR 3.5.2
BF1212 3.5.2
BF1212R 3.5.2
BF1212WR 3.5.2
BF1214 3.5.2
BF1215 3.5.2
BF1216 3.5.2
BF1217 3.5.2
BF1218 3.5.2
BF245A 3.5.1
BF245B 3.5.1
BF245C 3.5.1
BF510 3.5.1
BF511 3.5.1
BF512 3.5.1
BF513 3.5.1
BF545A 3.5.1
BF545B 3.5.1
BF545C 3.5.1
BF556A 3.5.1
BF556B 3.5.1
BF556C 3.5.1
BF861A 3.5.1
BF861B 3.5.1
BF861C 3.5.1
BF862 3.5.1
BF904A 3.5.2
BF904AR 3.5.2
BF904AWR 3.5.2
BF908 3.5.2
BF908R 3.5.2
BF908WR 3.5.2
BF909A 3.5.2
BF909AR 3.5.2
BF909AWR 3.5.2
BF991 3.5.2
BF992 3.5.2
BF994S 3.5.2
BF996S 3.5.2
BF998 3.5.2
BF998R 3.5.2
BF998WR 3.5.2
BFG10 3.3.1
BFG10/X 3.3.1
BFG10W/X 3.3.1
BFG135 3.3.1
BFG198 3.3.1
BFG21W 3.3.1
BFG25A/X 3.3.1
BFG25AW 3.3.1
BFG25AW/X 3.3.1
BFG31 3.3.1
BFG310/XR 3.3.1
Type Portfolio
chapter
BFG310W/XR 3.3.1
BFG325/XR 3.3.1
BFG325W/XR 3.3.1
BFG35 3.3.1
BFG403W 3.3.1
BFG410W 3.3.1
BFG424F 3.3.1
BFG424W 3.3.1
BFG425W 3.3.1
BFG480W 3.3.1
BFG505 3.3.1
BFG505/X 3.3.1
BFG505W 3.3.1
BFG505W/X 3.3.1
BFG505W/XR 3.3.1
BFG520 3.3.1
BFG520/X 3.3.1
BFG520/XR 3.3.1
BFG520W 3.3.1
BFG520W/X 3.3.1
BFG540 3.3.1
BFG540/X 3.3.1
BFG540/XR 3.3.1
BFG540W 3.3.1
BFG540W/X 3.3.1
BFG540W/XR 3.3.1
BFG541 3.3.1
BFG590 3.3.1
BFG590/X 3.3.1
BFG591 3.3.1
BFG67 3.3.1
BFG67/X 3.3.1
BFG92A/X 3.3.1
BFG93A 3.3.1
BFG93A/X 3.3.1
BFG94 3.3.1
BFG97 3.3.1
BFM505 3.3.1
BFM520 3.3.1
BFQ149 3.3.1
BFQ18A 3.3.1
BFQ19 3.3.1
BFQ540 3.3.1
BFQ591 3.3.1
BFQ67 3.3.1
BFQ67W 3.3.1
BFR106 3.3.1
BFR30 3.5.1
BFR31 3.5.1
BFR505 3.3.1
BFR505T 3.3.1
BFR520 3.3.1
BFR520T 3.3.1
BFR540 3.3.1
BFR92A 3.3.1
BFR92AW 3.3.1
BFR93A 3.3.1
BFR93AR 3.3.1
BFR93AW 3.3.1
BFR94A 3.3.1
BFR94AW 3.3.1
BFS17 3.3.1
BFS17A 3.3.1
BFS17W 3.3.1
BFS25A 3.3.1
BFS505 3.3.1
BFS520 3.3.1
BFS540 3.3.1
BFT25 3.3.1
BFT25A 3.3.1
BFT46 3.5.1
9. Product index
119NXP Semiconductors RF Manual 15th edition
Product index
Type Portfolio
chapter
BFT92 3.3.1
BFT92W 3.3.1
BFT93 3.3.1
BFT93W 3.3.1
BFU610F 3.3.1
BFU630F 3.3.1
BFU660F 3.3.1
BFU690F 3.3.1
BFU710F 3.3.1
BFU725F/N1 3.3.1
BFU730F 3.3.1
BFU760F 3.3.1
BFU790F 3.3.1
BGA2001 3.4.1
BGA2002 3.4.1
BGA2003 3.4.1
BGA2011 3.4.1
BGA2012 3.4.1
BGA2022 3.4.1
BGA2031/1 3.4.1
BGA2709 3.4.1
BGA2711 3.4.1
BGA2712 3.4.1
BGA2714 3.4.1
BGA2715 3.4.1
BGA2716 3.4.1
BGA2717 3.4.1
BGA2748 3.4.1
BGA2771 3.4.1
BGA2776 3.4.1
BGA2800 3.4.1
BGA2801 3.4.1
BGA2802 3.4.1
BGA2803 3.4.1
BGA2815 3.4.1
BGA2816 3.4.1
BGA2850 3.4.1
BGA2865 3.4.1
BGA2866 3.4.1
BGA2870 3.4.1
BGA6289 3.4.1
BGA6489 3.4.1
BGA6589 3.4.1
BGA7024 3.4.1
BGA7027 3.4.1
BGA7124 3.4.1
BGA7127 3.4.1
BGA7130 3.4.1
BGA7202 3.4.1
BGA7204 3.4.1
BGA7350 3.4.1
BGA7351 3.4.1
BGD502 3.6.3
BGD702 3.6.3
BGD702N 3.6.3
BGD704 3.6.3
BGD712 3.6.3
BGD712C 3.6.3
BGD714 3.6.3
BGD802 3.6.3
BGD804 3.6.3
BGD812 3.6.3
BGD814 3.6.3
BGD816L 3.6.3
BGD885 3.6.3
BGE787B 3.6.1
BGE788C 3.6.1
BGE885 3.6.1
BGM1011 3.4.1
BGM1012 3.4.1
BGM1013 3.4.1
Type Portfolio
chapter
BGM1014 3.4.1
BGO807 3.6.4
BGO807C 3.6.4
BGO807CE 3.6.4
BGO827 3.6.4
BGR269 3.6.5
BGU7003 3.4.1
BGU7003W 3.4.1
BGU7004 3.4.1
BGU7005 3.4.1
BGU7007 3.4.1
BGU7008 3.4.1
BGU7031 3.4.1
BGU7032 3.4.1
BGU7033 3.4.1
BGU7041 3.4.1
BGU7042 3.4.1
BGU7051 3.4.1
BGU7052 3.4.1
BGU7053 3.4.1
BGX7100 3.4.2
BGX7220 3.4.2
BGX7221 3.4.2
BGX7300 3.4.2
BGX885N 3.6.1
BGY1085A 3.6.2
BGY585A 3.6.1
BGY587 3.6.1
BGY587B 3.6.1
BGY588C 3.6.1
BGY588N 3.6.1
BGY66B 3.6.5
BGY67 3.6.5
BGY67A 3.6.5
BGY68 3.6.5
BGY685A 3.6.1
BGY687 3.6.1
BGY785A 3.6.1
BGY787 3.6.1
BGY835C 3.6.1
BGY883 3.6.1
BGY885A 3.6.1
BGY887 3.6.1
BGY887B 3.6.1
BGY888 3.6.1
BLA6G1011-200R(G) 3.7.3.1
BLA6G1011LS-200RG 3.7.3.1
BLA6H0912-1000 3.7.3.1
BLA6H0912-500 3.7.3.1
BLA6H1011-600 3.7.3.1
BLD6G21L-50 3.7.1.3
BLD6G21LS-50 3.7.1.3
BLD6G22L(S)-50 3.7.1.4
BLF178P 3.7.2.1
BLF2425M6L(S)180P 3.7.2.3
BLF2425M6LS180P 3.7.2.3
BLF2425M7L(S)140 3.7.2.3
BLF2425M7L(S)200 3.7.2.3
BLF2425M7L(S)250P 3.7.2.3
BLF2425M7LS200 3.7.2.3
BLF2425M7LS250P 3.7.2.3
BLF25M612 3.7.2.3
BLF278XR 3.7.2.1
BLF571 3.7.2.1
BLF572P 3.7.2.1
BLF573(S) 3.7.2.1
BLF573P 3.7.2.1
BLF574 3.7.2.1
BLF578 3.7.2.1
BLF578XR 3.7.2.1
BLF642 3.7.2.1
Type Portfolio
chapter
BLF645 3.7.2.1
BLF647P 3.7.2.1
BLF6G10-200RN 3.7.1.1
BLF6G10(LS)-160RN 3.7.1.1
BLF6G10(S)-45 3.7.1.1
BLF6G10L-40BRN 3.7.1.1
BLF6G10L(S)-260PRN 3.7.1.1
BLF6G10LS-200RN 3.7.1.1
BLF6G13LS-250P 3.7.2.1
BLF6G15L-250PBRN 3.7.1.2
BLF6G15L-40BRN 3.7.1.2
BLF6G15LS-500H 3.7.2.1
BLF6G20-110 3.7.1.3
BLF6G20-180PN 3.7.1.3
BLF6G20-180RN 3.7.1.3
BLF6G20-230PRN 3.7.1.3
BLF6G20-40 3.7.1.3
BLF6G20-45 3.7.1.3
BLF6G20-75 3.7.1.3
BLF6G20LS-110 3.7.1.3
BLF6G20LS-140 3.7.1.3
BLF6G20LS-180RN 3.7.1.3
BLF6G20LS-75 3.7.1.3
BLF6G20S-230PRN 3.7.1.3
BLF6G20S-45 3.7.1.3
BLF6G21-10G 3.7.1.1
BLF6G22(LS)-180PN 3.7.1.4
BLF6G22(LS)-180RN 3.7.1.4
BLF6G22(S)-45 3.7.1.4
BLF6G22L-40BN 3.7.1.4
BLF6G22L(S)-40P 3.7.1.4
BLF6G22LS-100 3.7.1.4
BLF6G22LS-40P 3.7.1.4
BLF6G22LS-75 3.7.1.4
BLF6G27LS-40P 3.7.1.5
BLF6G38-10(G) 3.7.1.6
BLF6G38(LS)-100 3.7.1.6
BLF6G38(LS)-25 3.7.1.6
BLF6G38(LS)-50 3.7.1.6
BLF7G10LS-250 3.7.1.1
BLF7G15LS-200 3.7.1.2
BLF7G15LS-300P 3.7.1.2
BLF7G20L-200 3.7.1.3
BLF7G20L-250P 3.7.1.3
BLF7G20L-90P 3.7.1.3
BLF7G20LS-140P 3.7.1.3
BLF7G20LS-200 3.7.1.3
BLF7G20LS-250P 3.7.1.3
BLF7G20LS-90P 3.7.1.3
BLF7G21L(S)-160P 3.7.1.3
BLF7G21LS-160P 3.7.1.4
BLF7G22L(S)-130 3.7.1.4
BLF7G22L(S)-160 3.7.1.4
BLF7G22L(S)-200 3.7.1.4
BLF7G22L(S)-250P 3.7.1.4
BLF7G22LS-100P 3.7.1.4
BLF7G22LS-160 3.7.1.4
BLF7G24L(S)-100 3.7.1.5
BLF7G24L(S)-140 3.7.1.5
BLF7G24LS-160P 3.7.1.5
BLF7G27L(S)-100 3.7.1.5
BLF7G27L(S)-140 3.7.1.5
BLF7G27L(S)-150P 3.7.1.5
BLF7G27L(S)-75P 3.7.1.5
BLF7G27L(S)-90P 3.7.1.5
BLF7G27LS-200P 3.7.1.5
BLF7G38LS-90P 3.7.1.6
BLF871(S) 3.7.2.1
BLF878 3.7.2.2
BLF879P 3.7.2.2
BLF881(S) 3.7.2.1
Type Portfolio
chapter
BLF884P 3.7.2.2
BLF888 3.7.2.2
BLF888A 3.7.2.2
BLF888A(S) 3.7.2.1
BLF8G10LS-160 3.7.1.1
BLF8G10LS-300P 3.7.1.1
BLL6G1214L-250 3.7.3.2
BLL6H0514-25 3.7.3.1
BLL6H0514L(S)-130 3.7.3.2
BLL6H1214-500 3.7.3.2
BLL6H1214L(S)-250 3.7.3.2
BLM2425M720 3.7.2.3
BLM6G10-30(G) 3.7.1.1
BLM6G22-30 3.7.1.4
BLM7G22S-60PG 3.7.1.4
BLP05H6100P 3.7.2.1
BLP05H6500P 3.7.2.1
BLP05H650P 3.7.2.1
BLP09H620 3.7.2.1
BLP10H605 3.7.2.1
BLP10H610 3.7.2.1
BLP10H6120 3.7.2.1
BLP10H6300P 3.7.2.1
BLP10H6xx 3.7.2.1
BLP15M6100P 3.7.2.1
BLP15M630 3.7.2.1
BLP15M660P 3.7.2.1
BLP15M705 3.7.2.1
BLP15M710 3.7.2.1
BLP15M7150P 3.7.2.1
BLP15M7xx 3.7.2.1
BLP2425M8140 3.7.2.3
BLP2425M8250P 3.7.2.3
BLP25M710 3.7.2.3
BLP25M74 3.7.2.3
BLP7G10S-140P(G) 3.7.1.1
BLP7G10S-140PG 3.7.1.1
BLP7G22-10 3.7.1.4
BLS6G2731-6G 3.7.3.3
BLS6G2731(S)-120 3.7.3.3
BLS6G2731P-200 3.7.3.3
BLS6G2731S-130 3.7.3.3
BLS6G2735L(S)-30 3.7.3.3
BLS6G2735LS-30 3.7.3.3
BLS6G2933P-200 3.7.3.3
BLS6G2933S-130 3.7.3.3
BLS6G3135(S)-120 3.7.3.3
BLS6G3135(S)-20 3.7.3.3
BLS7G2729L(S)-350P 3.7.3.3
BLS7G2729LS-350P 3.7.3.3
BLS7G2933S-150 3.7.3.3
BLS7G3135L(S)-350P 3.7.3.3
BLS7G3135LS-350P 3.7.3.3
BLT50 3.3.1
BLT70 3.3.1
BLT80 3.3.1
BLT81 3.3.1
BSR56 3.5.1
BSR57 3.5.1
BSR58 3.5.1
BSS83 3.5.2
CGD1040HI 3.6.3
CGD1042H 3.6.3
CGD1042HI 3.6.3
CGD1044H 3.6.3
CGD1044HI 3.6.3
CGD1046Hi 3.6.3
CGD942C 3.6.3
CGD944C 3.6.3
CGD982HCi 3.6.3
CGD985HCi 3.6.3
120 NXP Semiconductors RF Manual 15th edition
Type Portfolio
chapter
CGD987HCi 3.6.3
CGY1032 3.6.2
CGY1041 3.6.2
CGY1043 3.6.2
CGY1047 3.6.2
CGY1049 3.6.2
CGY888C 3.6.1
DAC1001D125 3.8.2
DAC1003D160 3.8.2
DAC1005D series 3.8.2
DAC1008D series 3.8.2
DAC1201D125 3.8.2
DAC1203D160 3.8.2
DAC1205D series 3.8.2
DAC1208D series 3.8.2
DAC1401D125 3.8.2
DAC1403D160 3.8.2
DAC1405D series 3.8.2
DAC1408D series 3.8.2
J108 3.5.1
J109 3.5.1
J110 3.5.1
J111 3.5.1
J112 3.5.1
J113 3.5.1
J174 3.5.1
J175 3.5.1
Type Portfolio
chapter
J176 3.5.1
J177 3.5.1
PBR941 3.3.1
PBR951 3.3.1
PMBD353 3.2.4
PMBD354 3.2.4
PMBF4391 3.5.1
PMBF4392 3.5.1
PMBF4393 3.5.1
PMBFJ108 3.5.1
PMBFJ109 3.5.1
PMBFJ110 3.5.1
PMBFJ111 3.5.1
PMBFJ112 3.5.1
PMBFJ113 3.5.1
PMBFJ174 3.5.1
PMBFJ175 3.5.1
PMBFJ176 3.5.1
PMBFJ177 3.5.1
PMBFJ308 3.5.1
PMBFJ309 3.5.1
PMBFJ310 3.5.1
PMBFJ620 3.5.1
PRF947 3.3.1
PRF949 3.3.1
PRF957 3.3.1
TFF1003HN 3.4.4
Type Portfolio
chapter
TFF1007HN 3.4.4
TFF1008HN 3.4.4
TFF1014HN 3.4.3
TFF1015HN 3.4.3
TFF1017HN 3.4.3
TFF1018HN 3.4.3
TFF11070HN 3.4.4
TFF11073HN 3.4.4
TFF11077HN 3.4.4
TFF11080HN 3.4.4
TFF11084HN 3.4.4
TFF11088HN 3.4.4
TFF11092HN 3.4.4
TFF11094HN 3.4.4
TFF11096HN 3.4.4
TFF11101HN 3.4.4
TFF11105HN 3.4.4
TFF11110HN 3.4.4
TFF11115HN 3.4.4
TFF11121HN 3.4.4
TFF11126HN 3.4.4
TFF11132HN 3.4.4
TFF11139HN 3.4.4
TFF11145HN 3.4.4
TFF11152HN 3.4.4
121NXP Semiconductors RF Manual 15th edition
Notes
122 NXP Semiconductors RF Manual 15th edition
Notes
www.nxp.com
Application and design manual
for High Performance RF products
May 2011
Date of release: May 2011
Document order number: 9397 750 17087
Printed in the Netherlands
© 2011 NXP B.V.
All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner. The information presented in this document does not form part of any quotation or contract,
is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by
the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
RF Manual 15th edition
RF Manual 15th edition
192-53520-0411-1235
www.climatepartner.com
NXP_04_0024_RF_Manual_15_Cover_v8.indd 1 27/04/11 14:44
