BCV47
SURFACE MOUNT SILICON
NPN DARLINGTON TRANSISTOR DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCV47 is a silicon
NPN Darlington transistor manufactured by the epitaxial
planar process, epoxy molded in a surface mount package,
designed for applications requiring extremely high gain.
MARKING CODE: FG
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO 60 V
Emitter-Base Voltage VEBO 10 V
Continuous Collector Current IC 500 mA
Peak Collector Current ICM 800 mA
Continuous Base Current IB 100 mA
Power Dissipation PD 350 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 357 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
ICBO V
CB=30V 100 nA
IEBO V
BE=10V 100 nA
BVCEO I
C=10mA 60 V
BVCBO I
C=10μA 80 V
BVEBO I
E=100nA 10 V
VCE(SAT) I
C=100mA, IB=0.1mA 1.0 V
VBE(SAT) I
C=100mA, IB=0.1mA 1.5 V
hFE V
CE=5.0V, IC=1.0mA 2,000
hFE V
CE=5.0V, IC=10mA 4,000
hFE V
CE=5.0V, IC=100mA 10,000
fT V
CE=5.0V, IC=30mA, f=100MHz 220 MHz
SOT-23 CASE
R3 (23-April 2015)
www.centralsemi.com
BCV47
SURFACE MOUNT SILICON
NPN DARLINGTON TRANSISTOR
SOT-23 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Emitter
3) Collector
MARKING CODE: FG
1
3
2
www.centralsemi.com
R3 (23-April 2015)
BCV47
SURFACE MOUNT SILICON
NPN DARLINGTON TRANSISTOR
TYPICAL ELECTRICAL CHARACTERISTICS
R3 (23-April 2015)
www.centralsemi.com
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