T4-LDS-0282, Rev. 1 (121569) ©2012 Microsemi Corporation Page 1 of 5
2N6315 and 2N6316
Available
NPN SILICO N POWER TR ANSISTOR
DESCRIPTION
These 2N6315 and 2N6316 devices are an excellent choice for un-tuned amplifier
applications. It is also ideal for general purpose power switch and amplifier applications.
Microsemi also offers numerous other products to meet higher and lower power voltage
regulation applicatio ns .
TO-213A A ( TO-66)
Package
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• Hermet ically sealed.
• Complimentary pairing with the PNP 2N6317 and 2N6318.
• RoHS compliant versions available.
APPLICATIONS / BENEFITS
• Convenient package.
• Mechanically rugged.
• Commercial, industrial, and military uses.
MAXIMUM RATINGS @ 25 ºC unless otherwise stated
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-65 to +200
oC
Thermal Resi stan ce Jun cti on-to-Lead (1)
RӨJL
235
oC
Collector-Base Voltage
V
CBO
60
80
V
Emitter-Base Voltage
VEBO
5
V
Collector-Emitter Voltage
2N6316
V
CEO
60
80
V
Continuous Operating Collector Current
IC
7
A
Continuous Base Current
2
A
Total Power Dissipation (2)
PT
90
W
NOTES: 1. At 1/8 inch from case for 10 seconds.
2. Derate linearl y at 0.515 W/ ºC.
T4-LDS-0282, Rev. 1 (121569) ©2012 Microsemi Corporation Page 2 of 5
2N6315 and 2N6316
MECHANICAL and PACKAGING
• CASE: Hermetic, TO-66 package. Nickel plat e with nickel cap.
• TERMINALS: Solder dipped ( Sn63/Pb37) over nickel plated alloy 52. RoHS compli ant matte-tin plating is also available.
• MARKING: MSC, part number, date code, polarity symbol.
• WEIGHT: Approximately 5.7 gram s.
• See Package Dimensions on last page.
PART NOMENCLATURE
2N6315 (e3)
JEDEC T ype Number
See Electrical Characteristics
table
RoHS Compli ance
e3 = RoHS compliant
Blank = non-RoHS compliant
SYMBOLS & DEFINITIONS
Symbol
Definition
IB
Base current
TC
Case temperature
VCB
Collector-base volta ge
VCC
Collector-supply voltage
VEB
Emitter-base voltage
T4-LDS-0282, Rev. 1 (121569) ©2012 Microsemi Corporation Page 3 of 5
2N6315 and 2N6316
ELECTRICA L CHARACTERISTICS @ 25 ºC unless otherwise stated
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
STATIC CHARACTERISTICS
Collector Cutoff Current
VCE = 60 VBE = 1.5 V, TC = 150 ºC
V
CE
= 80 V
BE
= 1.5 V, TC = 150 ºC
2N6315
2N6316
ICEX
2.0
mA
Collector Cutoff Current
VCE = 60 VBE = 1.5 V
VCE = 80 VBE = 1.5 V
2N6315
2N6316
ICEX
0.25
mA
Emitter Cutoff Current
VEB = 5 V IEBO 1.0 mA
Collector-Emitter Open Base Sustain Voltage (1)
IB = 0, IC = 100 mA 2N6315
2N6316
VCEO(sus)
60
80
Collector Cutoff Current, Base Open
IB = 0, VCE = 30 V
I
B
= 0, V
CE
= 40 V
2N6315
2N6316
ICEO
0.5
mA
DC Forward Current Transfer Ratio
(1)
IC = 7 A, VCE = 4 V
IC = 2.5 A, VCE = 4 V
IC = 0.5 A, VCE = 4 V
hFE 4
20
35
100
Collector-Emitter Saturation Voltage (1)
IC = 7.0 A, IB = 1.75 A
IC = 4.0 A, IB = 0.4 A
VCE(sat)
2.0
1.0 V
Base-Emitter Saturation Voltage
(1)
IC = 7.0 A, IB = 1.75 A
VBE(sat) 2.5 V
Base-Emitter Voltage
(1)
IC = 2.5 A, VCE = 4.0 V
VBE 1.5 V
NOTE: 1. Pulse Width < 300 µs; duty cycle < 2 %.
DYN AMIC CH AR ACTE RISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Magnitude of Common Emitter Small-Signal
Short-Circuit Forward Current Transfer Ratio
VCE = 10 V, IC = 0.25 A, f = 1 MHz
|hfe| 4
Common Base Output
VCB = 10 V, IE = 0 A, f = 1 MH z
Cob 200 pF
Common Emitter Small-Sig nal Sh ort-Circuit
Forward Current Trans-Ratio
VCE = 4 V, IC = 0.5 A, f = 1 k Hz
hfe 20
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Rise time
VCC = 30 V, IC = 2.5 A, IB1 = IB2 = 0.25 A (see figure 2 )
tr 0.7 µs
Storage time
VCC = 30 V, IC = 2.5 A, IB1 = IB2 = 0.25 A (see figure 2 )
ts 1.0 µs
Fall time
VCC = 30 V, IC = 2.5 A, IB1 = IB2 = 0.25 A (see figure 2 )
tf 0.8 µs
T4-LDS-0282, Rev. 1 (121569) ©2012 Microsemi Corporation Page 4 of 5
2N6315 and 2N6316
GRAPHS
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1
Safe Operating Area (TC = 25 ºC)
Figure 2
Switching Times Test Circuit
I
C
, COLLECTOR CURRENT (AMPS)
T4-LDS-0282, Rev. 1 (121569) ©2012 Microsemi Corporation Page 5 of 5
2N6315 and 2N6316
PACKAGE DIMENSIONS
DIM
INCH
MILLIMETERS
MIN
MAX
MIN
MAX
A1
.470
.500
11.94
12.70
A2
-
.620
-
15.75
B
.050
.075
1.27
1.91
C
-
.050
-
1.27
D
.360
-
9.14
-
E
.028
.034
0.71
0.86
F
.145 radius
3.68 radius
G
.958
.962
24.33
24.43
H
.570
.590
14.48
14.99
J
.093
.107
2.36
2.72
K
.190
.210
4.83
5.33
L
.350 radius
8.89 radius
M
.142
.152
3.61
3.86
N
.250
.340
6.35
8.64
T1
Base
T2
Emitter
Case
Collector