RECTRON
SEMICONDUCTOR
FEATURES
*Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input resistors.(see equi-
valent circuit).
*Only the on/off conditions need to be set for operation, mark-
ing device design easy.
*The bias resistors consist of thin-film resistors with co-
mplete isolation to allow negative biasing of the input.
They also have the advantage of almost completely elimin-
ating parasitic effects.
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
SOT-23
DTA124ECA
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25OC ambient temperature unless otherwise specified.
TECHNICAL SPECIFICATION
SOT-23 DIGITAL TRANSISTOR
TRANSISTORS(PNP)
2006-3
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
Resistance ratio
DC current gain (VO= -5V,IO= -5mA)
Input current (VI= -5V)
Input resistance
Transition frequency (VO= -10V,IO= -5mA, f= 100MHz)
CHARACTERISTICS SYMBOL UNITS
-0.5
-
-0.3
-0.5
-
mA
mA
-
-
V
V
MHz
Input voltage (VCC= -5V, IO= -100mA)
Input voltage (VO= -0.2V, IO= -5mA)
Output current (VCC= -50V,VI= 0)
Output voltage (IO / II= -10mA / -0.5mA)
MAXIMUM RATINGES ( @ TA = 25oC unless otherwise noted )
RATINGS
Supply voltage
Input voltage
Output current
Power dissipation
SYMBOL
Tj
Tstg
Pd
VCC
VIN
IO
VI(off)
VI(on)
Vo(on)
Io(off)
GI
R1
R2 / R1
II
fT
LIMITS
MAX
-
-
-
-
-
1
TYP
-
-3
-
-
56
MIN
UNITS
150
-50
-40~10
mA
V
V
-30
Storage temperature
Junction temperature
IC(MAX)
mW
-100
200
-55 ~150
oC
oC
(2) (1)
(3)
- - -0.36
15.4
0.8 1.2
22 28.6
- 250 -
KW
(1) IN
(2) GND
(3) OUT
0.118(3.00)
0.012(0.30)
0.020(0.50)
0.003(0.08)
0.006(0.15)
0.110(2.80)
0.079(2.00)
0.071(1.80)
0.100(2.55)
0.089(2.25)
f 0.022(0.55)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.055(1.40)
0.047(1.20)
(1)
(2) (3)
Note: "Fully ROHS compliant", "100% Sn plating (Pb-free)".