Super323 SOT323 NPN SILICON
POWER(SWITCHING) TRANSISTOR
ISSUE 1 - SEPTEMBER 1998
FEATURES
* 500mW POWER DISSIPATION
*I
C CONT 1.25A
* 3A Peak Pulse Current
* Excellent HFE Characteristics Up to 3A (pulsed)
* Extremely Low Equivalent On Resistance; RCE(sat)
APPLICATIONS
* Corded telecoms.
* Boost functions in DC-DC converters
* Motor driver functions
DEVICE TYPE COMPLEMENT PARTMARKING RCE(sat)
ZUMT618 ZUMT718 T62 125mΩ at1.25A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 20 V
Collector-Emitter Voltage VCEO 20 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current** ICM 4A
Continuous Collector Current IC1.25 A
Base Current IB500 mA
Power Dissipation at Tamb
=25°C Ptot 385 †
500 ‡ mW
Operating and Storage Temperature
Range Tj:Tstg -55 to +150 °C
† Recommended Ptot calculated using FR4 measuring 10 x 8 x 0.6mm (still air).
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.
ZUMT618
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage V(BR)CBO 20 V IC= 100µA
Collector-Emitter
Breakdown Voltage V(BR)CEO 20 V IC= 10mA*
Emitter-Base
Breakdown Voltage V(BR)EBO 5V
IE= 100µA
Collector Cut-Off
Current ICBO 10 nA VCB= 16V
Emitter Cut-Off
Current IEBO 10 nA VEB= 4V
Collector Emitter
Cut-Off Current ICES 10 nA VCES= 16V
Collector-Emitter
Saturation Voltage VCE(sat) 16.5
40
80
140
155
25
60
115
200
250
mV
mV
mV
mV
mV
IC= 100mA, IB=10mA*
IC= 250mA, IB= 10mA*
IC= 500mA, IB=10mA*
IC= 1A, IB=20mA*
IC= 1.25A, IB=50mA*
Base-Emitter
Saturation Voltage VBE(sat) 955 1100 mV IC= 1.25A, IB=50mA*
Base-Emitter
Turn-On Voltage VBE(on) 840 1100 mV IC= 1.25A, VCE= 2V*
Static Forward
Current Transfer
Ratio
hFE 200
300
200
100
40
20
420
450
380
300
180
60
IC= 10mA, VCE
= 2V*
IC= 100mA, VCE= 2V*
IC= 500mA, VCE=2V*
IC= 1A, VCE=2 V*
IC= 2A, VCE=2V*
IC=4A, VCE= 2V*
Transition
Frequency fT210 MHz IC= 50mA, VCE
=10V
f= 100MHz
Output Capacitance Cobo 10 pF VCB= 10V, f=1MHz
Turn-On Time t(on) 50 ns VCC=10 V, IC=1A
IB1=IB2=100mA
Turn-Off Time t(off) 275 ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
ZUMT618
ZUMT618
1m
1m
1m 100m 100
1m
1m
IC- Collector Current (A)
VCE(sat) v IC
0
VCE(sat) - (V)
IC/IB=10
IC/IB=50
IC/IB=100
+25°C
-55°C
hFE - Typical Gain
+100°C
0
IC- Collector Current (A)
hFE v IC
VBE(on) - (V)
0
IC- Collector Current (A)
VBE(on) v IC
+100°C
+150°C
VCE(sat) - (V)
+25°C
0
IC- Collector Current (A)
VCE(sat) v IC
+100°C
+150°C
VBE(sat) - (V)
+25°C
0
IC- Collector Current (A)
VBE(sat) v IC
1s
100ms
IC- Collector Current (A)
10
DC
10m
VCE - Collector Emitter Voltage (V)
Safe Operating Area
10ms
1ms
100µs
+25°C
-55°C
IC/IB=50
VCE=2V
-55°C
IC/IB=50
+25°C
+150°C
+100°C
-55°C
10m 100m 1 10
0.1
0.2
0.3
0.4
0.1
0.2
0.3
0.4
10m 100m 1 10
10m 100m 1 10 10m 100m 1 10
10m 100m 1 10
0.4
0.6
0.8
1.0
0.2
200
400
600
0.2
0.4
0.6
0.8
1.0
110
100m
1
TYPICAL CHARACTERISTICS
