Super323 SOT323 NPN SILICON POWER(SWITCHING) TRANSISTOR ZUMT618 ISSUE 1 - SEPTEMBER 1998 FEATURES * 500mW POWER DISSIPATION * * * * IC CONT 1.25A 3A Peak Pulse Current Excellent HFE Characteristics Up to 3A (pulsed) Extremely Low Equivalent On Resistance; RCE(sat) APPLICATIONS * Corded telecoms. * Boost functions in DC-DC converters * Motor driver functions DEVICE TYPE COMPLEMENT PARTMARKING RCE(sat) ZUMT618 ZUMT718 T62 125m at1.25A ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 20 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current** ICM 4 A Continuous Collector Current IC 1.25 A Base Current IB 500 mA Power Dissipation at Tamb=25C Ptot 385 500 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 C Recommended Ptot calculated using FR4 measuring 10 x 8 x 0.6mm (still air). Maximum power dissipation is calculated assuming that the device is mounted on FR4 size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers. ZUMT618 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage UNIT CONDITIONS. 20 V IC= 100A V(BR)CEO 20 V IC= 10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE= 100A Collector Cut-Off Current ICBO 10 nA VCB= 16V Emitter Cut-Off Current IEBO 10 nA VEB= 4V Collector Emitter Cut-Off Current ICES 10 nA VCES= 16V Collector-Emitter Saturation Voltage VCE(sat) 16.5 40 80 140 155 25 60 115 200 250 mV mV mV mV mV IC= 100mA, IB=10mA* IC= 250mA, IB= 10mA* IC= 500mA, IB=10mA* IC= 1A, IB=20mA* IC= 1.25A, IB=50mA* Base-Emitter Saturation Voltage VBE(sat) 955 1100 mV IC= 1.25A, IB=50mA* Base-Emitter Turn-On Voltage VBE(on) 840 1100 mV IC= 1.25A, VCE= 2V* Static Forward Current Transfer Ratio hFE Transition Frequency fT 210 MHz IC= 50mA, VCE=10V f= 100MHz Output Capacitance Cobo 10 pF VCB= 10V, f=1MHz Turn-On Time t(on) 50 ns Turn-Off Time t(off) 275 ns VCC=10 V, IC=1A IB1=IB2=100mA 200 300 200 100 40 20 TYP. MAX. IC= 10mA, VCE= 2V* IC= 100mA, VCE= 2V* IC= 500mA, VCE=2V* IC= 1A, VCE=2 V* IC= 2A, VCE=2V* IC=4A, VCE= 2V* 420 450 380 300 180 60 *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% ZUMT618 TYPICAL CHARACTERISTICS 0.4 0.4 +25C IC/IB=50 0.3 IC/IB=10 IC/IB=50 IC/IB=100 VCE(sat) - (V) VCE(sat) - (V) 0.3 0.2 0.1 0 -55C +25C +100C +150C 0.2 0.1 1m 10m 100m 1 0 10 10m 1m IC - Collector Current (A) VCE(sat) v IC VCE=2V 10 +100C 0.8 400 VBE(sat) - (V) hFE - Typical Gain 1 IC/IB=50 1.0 600 +25C -55C 200 0.6 0.4 -55C +25C +100C +150C 0.2 0 0 1m 10m 100m 1 10 1m IC - Collector Current (A) hFE v IC 100m 1 10 10 IC - Collector Current (A) 0.8 0.6 0.4 -55C +25C +100C +150C 0.2 0 1m 10m IC - Collector Current (A) VBE(sat) v IC 1.0 VBE(on) - (V) 100m IC - Collector Current (A) VCE(sat) v IC 10m 100m 1 IC - Collector Current (A) VBE(on) v IC 10 1 100m 10m 100m DC 1s 100ms 10ms 1ms 100s 1 10 VCE - Collector Emitter Voltage (V) Safe Operating Area 100