2001-2012 Microchip Technology Inc. DS21662F-page 1
TC2014/2015/2185
Features
• Low Supply Current: 80 µA (Max)
• Low Dropout Voltage: 140 mV (Typ.) @ 150 mA
• High-Output Voltage Accuracy: ±0.4% (Typ.)
• Standard or Custom Output Voltages
• Power-Saving Shutdown Mode
• Reference Bypass Input for Ultra Low-Noise
Operation
• Fast Shutdown Response Time: 60 µsec (Typ.)
• Overcurrent and Overtemperature Protection
• Space-Saving 5-Pin SOT-23A Package
• Pin-Compatible Upgrades for Bipolar Regulato rs
• Wide Operating Temperature Range:
-40°C to +125°C
• Standard Output Voltage Options:
- 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V,
3.3V, 5.0 V
Applications
• Battery-Operated Systems
• Portable Computers
• Medical Instruments
• Instrumentation
• Cellular/GSM/PHS Phones
• Linear Post-Regulator for SMPS
• Pagers
Related Literature
• Application Notes: AN765, AN766, AN776 and
AN792
Package Type
General Description
The TC2014, TC2015 and TC2185 are high-accuracy
(typically ±0.4%) CMOS upgrades for bipolar Low
Drop-out Regulators (LDOs), such as the LP2980.
Total supply current is typically 55 µA; 20 to 60 times
lower than in bipolar regulators.
The key features of the device include low noise oper-
ation (plus bypass reference), low dropout voltage
– typically 45 mV for the TC2014, 90 mV for the
TC2015 , and 140 mV for the TC 2185 , at f ull l oad – and
fast response to step changes in load. Supply current
is redu ced t o 0. 5 µA (max) an d VOUT falls to z ero whe n
the shutdown input is low. These devices also
incorporate overcurrent and overtemperature
protection.
The TC2014, TC2015 and TC2185 are stable with an
output capacitor of 1 µF and have maximum output
currents of 50 mA, 100 mA and 150 mA, respectively.
For higher-output current versions, see the TC1107
(DS21356), TC1108 (DS21357) and TC1173
(DS21362) (IOUT = 300 mA) data sheets.
Typical Application
TC2014
TC2015
TC2185
13
4
5
2
Bypass
GND
VOUT
VIN SHDN
5-Pin SOT-23A
0.01 µF
Reference
Bypass Cap
(Optional)
Shutdown Control
(from Power Control Logic)
TC2014
TC2015
TC2185
VIN
1
2
34
5
VIN VOUT
Bypass
SHDN
GND
VOUT
1µF 1µF
++
50 mA, 100 mA, 150 mA CMOS LDOs with
Shutdown and Reference Bypass
TC2014/2015/2185
DS21662F-page 2 2001-2012 Mic rochip Technology Inc.
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Input Voltage............ .. .. .. .. ....... .. .. .. .... .. .. .. ....... .. .. .. .. .... .. ... 7.0V
Output Voltage ............. ........... .............. . (– 0.3) to (V IN + 0.3)
Operating Temperature......................... – 40°C < TJ < 125°C
Storage Temperature .................................. – 65°C to +150°C
Maximum Voltage on Any Pin ................ VIN +0.3V to – 0.3V
Maximum Junction Temperature.................................. 150°C
† Notice: Stresses above those listed under "Absolute
Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only and functional
operatio n of the devic e at these or an y other con ditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
ELECTR ICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, VIN = VR + 1V, IL = 100 µA, COUT = 3.3 µF, SHDN > VIH, TA = +25°C.
BOLDFACE type specifications apply for junction temperature of -40°C to +125°C.
Parameters Sym Min Typ Max Units Conditions
Input Operating Voltage VIN 2.7 —6.0 VNote 1
Maximum Output
Current IOUTMAX 50 ——mATC2014
100 —— TC2015
150 —— TC2185
Output Voltage VOUT VR – 2.0% VR ± 0.4% VR + 2.0% VNote 2
VOUT Temperature
Coefficient TCVOUT —20—ppm/°CNote 3
—40 —
Line Regulation VOUT/VIN —0.050.5 %(V
R + 1V) < VIN < 6V
Load Regulation
(Note 4) VOUT/VOUT -1.0 0.33 +1.0 %TC2014;TC2015:I
L = 0.1 mA to I OUTMAX
-2.0 0.43 +2.0 TC2185:I
L = 0.1 mA to IOUTMAX (Note 4)
Dropout Voltage VIN – VOUT —2—mVNote 5 IL = 100 µA
—4570 IL = 50 mA
—90140 TC2015; TC2185 IL = 100 mA
— 140 210 TC2185 IL = 150 mA
Supply Current IIN —5580 µA SHDN = VIH, IL = 0
Shutdown Supply
Current IINSD —0.050.5µASHDN = 0V
Power Supply
Rejection Ratio PSRR — 55 — dB F 1 kHz, Cbypass = 0.01 µF
Output Short Circuit
Current IOUTSC — 160 300 mA VOUT = 0V
Note 1: The minimum VIN has to meet two conditions: VIN = 2.7V and VIN = VR + VDROPOUT.
2: VR is the regulator output voltage setting. For example: VR = 1.8V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V.
3:
4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the Thermal Regulation specification.
5: Dropout Voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal
value.
6: Thermal Regulation is defined as the change in output voltage at a t ime T after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to IMAX at VIN = 6V for T = 10 ms.
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction-to-air (i.e. TA, TJ, JA).
8: Time required for VOUT to reach 95% of VR (output voltage setting), after VSHDN is switched from 0 to VIN.
TCVOUT VOUTMAX VOUTMIN
–10 6–
VOUT T
----------------------------------------------------------------------------
=
2001-2012 Microchip Technology Inc. DS21662F-page 3
TC2014/2015/2185
TEMPERATURE CHAR ACTERISTICS
Thermal Regulation VOUT/PD—0.04— V/WNote 6, Note 7
Thermal Shutdown Die
Temperature TSD — 160 — °C
Output Noise eN — 200 — nV/Hz IL = IOUTMAX, F = 10 kHz
470 pF from Bypass to GND
Response Time
(from Shutdown Mode)
(Note 8)
TR—60—µsV
IN = 4V, IL = 30 mA,
CIN = 1 µF, COUT = 10 µF
SHDN Input
SHDN Input High
Threshold VIH 60 ——%V
IN VIN = 2.5V to 6.0V
SHDN Input Low
Threshold VIL ——15 %VIN VIN = 2.5V to 6.0V
ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise specified, VIN = VR + 1V, IL = 100 µA, COUT = 3.3 µF, SHDN > VIH, TA = +25°C.
BOLDFACE type specifications apply for junction temperature of -40°C to +125°C.
Parameters Sym Min Typ Max Units Conditions
Note 1: The minimum VIN has to meet two conditions: VIN = 2.7V and VIN = VR + VDROPOUT.
2: VR is the regulator output voltage setting. For example: VR = 1.8V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V.
3:
4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the Thermal Regulation specification.
5: Dropout Voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal
value.
6: Thermal Regulation is defined as the change in out put voltage at a time T after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to IMAX at VIN = 6V for T = 10 ms.
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction-to-air (i.e. TA, TJ, JA).
8: Time required for VOUT to reach 95% of VR (output voltage setting), after VSHDN is switched from 0 to VIN.
TCVOUT VOUTMAX VOUTMIN
–10 6–
VOUT T
----------------------------------------------------------------------------
=
Electrical Specifications: Unless otherwise noted, VDD = +2.7V to +6.0V and VSS = GND.
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges:
Extended Temperature Range TA-40 — +125 °C
Operating Tem perat ure Range TA-40 — +125 °C
Storage Temperature Range TA-65 — +150 °C
Thermal Package Resistances:
Thermal Resistance, 5L-SOT-23 JA —255—°C/W
TC2014/2015/2185
DS21662F-page 4 2001-2012 Mic rochip Technology Inc.
2.0 TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, VIN = VR + 1V, IL = 100 µA, COUT = 3.3 µF, SHDN > VIH, TA = +25°C.
FIGURE 2-1: Supply Current vs. Junction
Temperature.
FIGURE 2-2: Load Regulation vs. Supply
Voltage.
FIGURE 2-3: Output Voltage vs. Junction
Temperature.
FIGURE 2-4: Output Voltage vs. Junction
Temperature.
FIGURE 2-5: Output Voltage vs. Supply
Voltage.
FIGURE 2-6: Dropout Voltage vs.
Junction Temperature.
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
45.0
48.0
51.0
54.0
57.0
60.0
63.0
-40
-25
-10
5
20
35
50
65
80
95
110
125
Junction Temperature (°C)
IDD (µA)
VR = 1.8V
COUT = 3.3 µF
VIN = 2.8V
VIN = 6.0V
-0.8
-0.6
-0.4
-0.2
0
0.2
0.4
0.6
0.8
2.8 3.2 3.6 4 4.4 4.8 5.2 5.6 6
Supply Voltage (V)
Load Regulation (%)
VR = 1.8V
COUT = 3.3 µF
IL = 150 mA
TA = +25°C
TA = +125°C
TA = -45°C
1.790
1.795
1.800
1.805
1.810
-40
-25
-10
5
20
35
50
65
80
95
110
125
Junction Temperature (°C)
Output Voltage (V)
VIN = 6.0V
VIN = 2.8V
VR = 1.8V
COUT = 3.3 µF
IL = 0.1 mA
1.785
1.790
1.795
1.800
1.805
1.810
1.815
1.820
-40
-25
-10
5
20
35
50
65
80
95
110
125
Junction Temperature (°C)
Output Voltage (V)
VR = 1.8V
COUT = 3.3 µF
IL = 150 mA
VIN = 2.8V
VIN = 6.0V
1.785
1.79
1.795
1.8
1.805
1.81
1.815
1.82
2.8 3.2 3.6 4 4.4 4.8 5.2 5.6 6
Supply Voltage (V)
Output Voltage (V)
VR = 1.8V
COUT = 3.3 µF
IL = 150 mA
TA = +25°C
TA = +125°C
TA = -45°C
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
-40
-25
-10
5
20
35
50
65
80
95
110
125
Junction Temperature (°C)
Dropout Voltage (V)
VR = 1.8V
COUT = 3.3 μF
IL = 20 mA
IL = 50 mA
IL = 100 mA
IL = 150 mA
Note: Dropout Voltage is not
a tested parameter for 1.8V.
VIN(min) ! 2.7V
2001-2012 Microchip Technology Inc. DS21662F-page 5
TC2014/2015/2185
Note: Unless otherwise indicated, VIN = VR + 1V, IL = 100 µA, COUT = 3.3 µF, SHDN > VIH, TA = +25°C.
FIGURE 2-7: Supply Current vs. Junction
Temperature.
FIGURE 2-8: Load Regulation vs. Supply
Voltage.
FIGURE 2-9: Output Voltage vs. Junction
Temperature.
FIGURE 2-10: Output Voltage vs. Junction
Temperature.
FIGURE 2-11: Output Voltage vs. Supply
Voltage.
FIGURE 2-12: Dropout Voltage vs.
Junction Temperature.
44.0
46.0
48.0
50.0
52.0
54.0
56.0
58.0
60.0
-40
-25
-10
5
20
35
50
65
80
95
110
125
Temperature (°C)
IDD(µA)
VR = 2.7V
COUT = 3.3 µF
VIN = 2.8V
VIN = 6.0V
-0.5
-0.3
-0.1
0.1
0.3
0.5
3.7 4 4.3 4.6 4.9 5.2 5.5 5.8
Supply Voltage (V)
Load Regulation (%)
VR = 2.7V
COUT = 3.3 µF
IL = 150 mA
TA = +25°C
TA = +125°C
TA = -45°C
2.670
2.672
2.674
2.676
2.678
2.680
2.682
2.684
2.686
2.688
2.690
-40
-25
-10
5
20
35
50
65
80
95
110
125
Junction Temperature (°C)
Output Voltage (V)
VIN = 6.0V
VIN = 3.7V
VR = 2.7V
COUT = 3.3 µF
IL = 0.1 mA
2.665
2.670
2.675
2.680
2.685
2.690
2.695
2.700
2.705
-40
-25
-10
5
20
35
50
65
80
95
110
125
Juncti on Temper at ur e (°C)
Output Voltage (V)
VR = 2.7V
COUT = 3.3 µF
IL = 150 mA
VIN = 3.7V
VIN = 6.0V
2.665
2.67
2.675
2.68
2.685
2.69
2.695
2.7
2.705
3.7 4 4.3 4.6 4.9 5.2 5.5 5.8
Suppl y Voltage (V)
Output Voltage (V)
VR = 2.7V
COUT = 3.3 µF
IL = 150 mA
TA = +25°C
TA = +125°C
TA = -45°C
0.000
0.040
0.080
0.120
0.160
-40
-25
-10
5
20
35
50
65
80
95
110
125
Junction Temperature (°C)
Dropout Voltage (V)
VR = 2.7V
COUT = 3.3 µF
IL = 20 mA
IL = 50 mA
IL = 100 mA
IL = 150 mA
TC2014/2015/2185
DS21662F-page 6 2001-2012 Mic rochip Technology Inc.
Note: Unless otherwise indicated, VIN = VR + 1V, IL = 100 µA, COUT = 3.3 µF, SHDN > VIH, TA = +25°C.
FIGURE 2-13: Supply Current vs. Junction
Temperature.
FIGURE 2-14: Output Voltage vs. Junction
Temperature.
FIGURE 2-15: Load Regulation vs.
Junction Temperatur e.
FIGURE 2-16: Dropout Voltage vs.
Junction Temperature.
FIGURE 2-17: Load Transient Response.
(COUT = 1 µF ).
FIGURE 2-18: Load Transient Response.
(COUT = 10 µ F ).
45
48
51
54
57
60
-40
-25
-10
5
20
35
50
65
80
95
110
125
Junction Temperature (°C)
IDD (µA)
VR = 5.0V
COUT = 3.3 µF
VIN = 6.0V
4.93
4.94
4.95
4.96
4.97
4.98
4.99
5.00
5.01
-40
-25
-10
5
20
35
50
65
80
95
110
125
Junction Temperature (°C)
Output Voltage (V)
IL = 100 mA
VR = 5.0V
COUT = 3.3 µF
VIN = 6.0V
IL = 150 mA
IL = 0.1 mA
-0.40
-0.30
-0.20
-0.10
0.00
0.10
0.20
0.30
0.40
-40
-25
-10
5
20
35
50
65
80
95
110
125
Junction Temperature (°C)
Load Regulation (%)
VR = 5.0V
COUT = 3.3 µF
VIN = 6.0 V
IL
= 50 mA
IL
= 100 mA
IL
= 150 mA
0.00
0.02
0.04
0.06
0.08
0.10
0.12
-40
-25
-10
5
20
35
50
65
80
95
110
125
Junction Temperature (°C)
Dropout Voltage (V)
VR = 5.0V
COUT = 3.3 µF
IL = 50 mA
IL = 100 mA
IL = 150 mA
150mA
Load
100mA
Load Current
100mV/DIV
VIN = 3.8V
VOUT = 2.8V
CIN = 1 µF Ceramic
COUT = 1 µF Ceramic
Frequency = 1 kHz
VOUT
150mA
Load
100mA
Load Current
100mV / DIV
V
IN
= 3.0V
V
OUT
= 2.8V
C
IN
= 1 μF Ceramic
C
OUT
= 10 μF Ceramic
Frequency = 10 kHz
V
OUT
2001-2012 Microchip Technology Inc. DS21662F-page 7
TC2014/2015/2185
Note: Unless otherwise indicated, VIN = VR + 1V, IL = 100 µA, COUT = 3.3 µF, SHDN > VIH, TA = +25°C.
FIGURE 2-19: Line Transient Response.
(COUT = 1 µF).
FIGURE 2-20: Load Transient Response in
Dropout. (COUT = 10 µF).
FIGURE 2-21: Shutdown Delay Time.
FIGURE 2-22: Wake-Up Respon se .
FIGURE 2-23: PSRR vs. Frequency
(COUT = 1 µF Ceramic).
FIGURE 2-24: PSRR vs. Frequency
(COUT = 10 µF Ceramic).
100mA
150mA
V
OUT
100mV/DIV
V
IN
= 3.105V
V
OUT
= 3.006V
C
IN
= 1 μF Ceramic
C
OUT
= 10 μF Ceramic
R
LOAD
= 20 Ω
-70
-60
-50
-40
-30
-20
-10
0
10 100 1000 10000 100000 100000
0
Frequency (Hz)
Power Supply Ripple Rejection
(dB)
VIN = 4.0V
VINAC = 100 mV
VOUTDC = 3.0V
COUT = 1µF Ceramic
CBYPASS = 0.01 µF Ceramic
IOUT = 50 mA
IOUT = 150 mA
IOUT = 100 mA
10 100 1k 10k 100k 1M
-70
-60
-50
-40
-30
-20
-10
0
10 100 1000 10000 100000 100000
0
Frequency (Hz)
Power Supply Ripple Rejection
(dB)
VIN = 4.0V
VINAC = 100 mV
VOUTDC = 3.0V
COUT = 10 µF Ceramic
CBYPASS = 0.01 µF Ceramic
IOUT = 150 mA
IOUT = 100 mA
10 100 1k 10k 100k 1M
TC2014/2015/2185
DS21662F-page 8 2001-2012 Mic rochip Technology Inc.
Note: Unless otherwise indicated, VIN = VR + 1V, IL = 100 µA, COUT = 3.3 µF, SHDN > VIH, TA = +25°C.
FIGURE 2-25: PSRR vs. Frequency
(COUT = 10 µF Tantalum). FIGURE 2-26: Output Noise vs. Frequency.
-70
-60
-50
-40
-30
-20
-10
0
10 100 1000 10000 100000 100000
0
Frequency (Hz)
Power Supply Ripple Rejection
(dB)
VIN = 4.0V
VINAC = 100 mV
VOUTDC = 3.0V
COUT = 10 µF Tantalum
IOUT = 150 mA
CBYPASS = 0.01 µF
CBYPASS = 0 µF
10 100 1k 10k 100k 1M
0.001
0.010
0.100
1.000
10.000
10 100 1000 10000 100000 100000
0
Frequency (Hz)
Noise (µV/Hz)
VIN = 4.0V
VOUTDC = 3.0V
IOUT = 100 µA
CBYPASS = 470 pF
COUT = 10 µF
COUT = 1 µF
10
100 1k 10k 100k 1M
1
0.1
0.10
2001-2012 Microchip Technology Inc. DS21662F-page 9
TC2014/2015/2185
3.0 PIN DESCRIPTIONS
The desc riptions of the pins are desc ribed in Table 3-1.
TABLE 3-1: PIN FUNCTION TABLE
3.1 Unregulated Supply Input (VIN)
Connect the unregulated input supply to the VIN pin. If
there is a large distance between the input supply and
the LDO regulator, some input capacitance is neces-
sary for proper operation. A 1 µ F capacitor, connected
from VIN to ground, is recommended for most
applications.
3.2 Ground Terminal (GND)
Connect the unregulated input supply ground return to
GND. Also connect one side of the 1 µF typical input
decoupling capacitor close to this pin and one side of
the output capacitor COUT to this pin.
3.3 Shutdown Control Input (SHDN)
The regulator is fully enabled when a logic-high is
applied to SHDN. The regulator enters shutdown when
a logic- low is applied to this input. During shutdown, the
output voltage falls to zero and the supply current is
reduced to 0.5 µA (max).
3.4 Reference Bypass Input (Bypass)
Connecting a low-value ceramic capacitor to Bypass
will further reduce output voltage noise and improve the
Power Supply Ripple Rejection (PSRR) performance
of the LDO. Typical values from 470 pF to 0.01 µF are
suggested. While smaller and larger values can be
used, these affect the speed at which the LDO output
voltage rises when input power is applied. The larger
the byp as s c ap a ci tor, the sl ower the output volt age wil l
rise.
3.5 Regulated Voltage Output (VOUT)
Connect the ou tpu t l oad to VOUT of th e L D O. Als o con-
nect on e side o f the L DO o u tpu t de -co u pl ing c apac i tor
as close as possible to the VOUT pin.
Pin No. Symbol Description
1V
IN Unregulated supply input
2 GND Ground term in al
3 SHDN Shutdown control i nput
4 Bypass Reference bypass input
5V
OUT Regulated voltage output
TC2014/2015/2185
DS21662F-page 10 2001-2012 Microchip Technology Inc.
4.0 DETAILED DESCRIPTION
The TC 20 14, TC201 5 and TC218 5 are p r ec isi on f i xe d-
output voltage regulators (if an adjustable version is
needed, see the TC1070, TC1071 and TC1187
(DS21353) data sheet). Unlike bipolar regulators, the
TC2014 , TC2015 an d TC 2 185 su pply curre nt doe s not
increase with load current. In addition, the LDO’s out-
put voltage is stable using 1 µF of ceramic or tantalum
capacitance over the entire specified input voltage
range and output current range.
Figure 4-1 shows a typical application circuit. The reg-
ulator is enabled anytime the shutdown input (SHDN)
is at or above VIH, and disabled (shutdown) when
SHDN is at o r below VIL. SHDN may be c ontroll ed by a
CMOS logic gate or I/O port of a microcontroller. If the
SHDN input is not required, it should be connected
directly to the input supply. While in shutdown, the
supply current decrea ses to 0.05 µA (typical ) and VOUT
falls to zero volts.
FIGURE 4-1: Typical Applica tio n Circui t.
4.1 Bypass Input
A 0.01 µF ceramic capacitor, connected from the
Bypass input to ground, reduces noise present on the
internal reference, which, in turn, significantly reduces
output noise. If o utp ut noise is no t a concern, this i np ut
may be le ft unco n ne cte d. La rg er c apaci t or va lu es may
be used, but the result is a longer time period to rated
output voltage when power is initially applied.
4.2 Output Capacitor
A 1 µF (min) capacitor from VOUT to ground is required.
The output capacitor should have an Effective Series
Resist an ce (ESR) of 0.01 to 5 for VOUT 2.5V, and
0.05. to 5 for VOUT < 2.5V. Ceramic, tanta lum or alu-
minum e lectrolytic capacito rs can be used. Whe n using
ceramic capacitors, X5R and X7R dielectric material
are recommended due to their stable tolerance over
temperat ure. However , other dielectrics can be used a s
long as the minim um output capac it ance is mai ntaine d.
4.3 Input Capacit or
A 1 µF capacitor should be connected from VIN to GND
if there is m ore than 10 inches of wire betwee n the reg-
ulator and thi s AC fi lte r c ap a ci tor, or if a battery is u se d
as the pow er so urce. Aluminum elec troly tic o r ta nta lum
capacitors can be used (since many aluminum electro-
lytic capacitors freeze at approximately -30°C, solid
tantalum are recommended for applications operating
below -25°C ). When opera ting fr om sourc es ot her tha n
batteries, supply-noise rejection and transient
response can be improved by increasing the value of
the input and output capacitors and employing passive
filtering techniques.
0.01 µF
Reference
Bypass Cap
(Optional)
Shutdown Control
(from Power Control Logic)
TC2014
TC2015
TC2185
VIN
1
2
34
5
VOUT
Bypass
SHDN
GND
VOUT
1µF 1µF
Battery
++ +
2001-2012 Microchip Technology Inc. DS21662F-page 11
TC2014/2015/2185
5.0 THERMAL CONSIDER ATION S
5.1 Thermal Shutdown
Integr ated t hermal p rote ction circu itry shu ts the regul a-
tor off when the die temperature exceeds approxi-
mately 160°C. The regulator remains off until the die
temperature cools to approximatley 150°C.
5.2 Power Dissipation
The am ount of power the regulato r dissip ates is prim ar-
ily a function of inpu t volt age, outp ut volt age and outp ut
current.
The f o ll ow in g equ at i on i s us ed t o ca l cu lat e wo rs t - case
power dissipation.
EQUATION 5-1:
The maximum allowable power dissipation (PDMAX) is
a function of the maximum ambient temperature
(TAMAX), the maximum allowable die temperature
(TJMAX) (+125°C) and the thermal resistance from junc-
tion-to-ai r (JA). The 5-Pin SOT -23A package has a JA
of approximately 220°C/Watt when mounted on a
typical two-layer FR4 dielectric copper-clad PC board.
EQUATION 5-2:
The PD equation can be used in conjunction with the
PDMAX equation to ensure that regulator thermal
operation is within limits. For example:
Actual power dissipation:
Maximum allowable power dissipation:
In this example, the TC2014 dissipates a maximum of
only 26. 7 mW; f ar below th e allow able limit o f 318 mW.
In a similar manner, the PD and PDMAX equations can
be used to calculate maximum current and/or input
voltage limits.
5.3 Layout Considerations
The prima ry path of he at conductio n out of the p ackage
is via the package leads. Therefore, layouts having a
ground plane, wide traces at the pads and wide power
supply bus lines combine to lower JA and, therefore,
increase the maximum allowable power dissipation
limit.
PDVINMAX VOUTMIN
–ILMAX
Where:
PD= Worst-case actual power dissipation
VINMAX = Maximum vo ltage on VIN
VOUTMIN = Minimum regulator output voltage
ILMAX = M aximum output (load) current
Where all terms are previously defined.
PDMAX TJMAX TAMAX
–
JA
---------------------------------------
=
Given:
VINMAX = 3 .0V +10%
VOUTMIN = 2.7V – 2. 5%
ILOADMAX =40mA
TJMAX = +125°C
TAMAX = +55°C
Find:
1. Actual power dissipation
2. Maximum allowable dissipation
PDVINMAX VOUTMIN
–ILMAX
=
3.0 1.1
2.7 0.975
–40 10 3–
=
26.7mW=
PDMAX TJMAX TAMAX
–
JA
---------------------------------------
=
125 55–
220
---------------------=
318mW=
TC2014/2015/2185
DS21662F-page 12 2001-2012 Microchip Technology Inc.
6.0 PACKAGING INFORMATION
6.1 Package Marking Information
6.2 Taping Form
&represen ts part num ber code + temperature
range and voltage
represents year and 2-month period code
represents lot ID number

TABLE 6-1: PART NUMBER CODE AND
TEMPERATURE RANGE
(V) TC2014 TC2015 TC2185
1.8 PA RA UA
2.5 PB RB UB
2.6 PH RH UH
2.7 PC RC UC
2.8 PD RD UD
2.85 PE RE UE
3.0 PF RF UF
3.3 PG RG UG
5.0 PJ RJ UJ
Carrier Tape, Number of Components Per Reel and Reel Size:
Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size
5-Pin SOT-23A 8 mm 4 mm 3000 7 in.
Component Taping Orientation for 5-Pin SOT-23A (EIAJ SC-74A) Devices
Device
Marking
PIN 1
User Direction of Feed
Standard Reel Component Orientation
for 713 Suffix Device
(Mark Right Side Up)
W
P
2001-2012 Microchip Technology Inc. DS21662F-page 13
TC2014/2015/2185
5-Lead Plastic Small Outline Transistor (OT) (SOT23)
1
p
D
B
n
E
E1
L
c
A2
A
A1
p1
10501050
b
Mold Draft Angle Bo tto m 10501050
a
Mold Draft Angle Top 0.500.430.35.020.017.014BLead Width 0.200.150.09.008.006.004
c
Lead Thickness 10501050
f
Foot Angle 0.550.450.35.022.018.014LFoot Length 3.102.952.80.122.116.110DOverall Length 1.751.631.50.069.064.059E1Molded Package Width 3.002.802.60.118.110.102EO v er a ll Widt h 0.150.080.00.006.003.000A1Standoff 1.301.100.90.051.043.035A2Molded Package Thickness 1.451.180.90.057.046.035AOverall Height 1.90.075
p1
Outside lead pitch (basic) 0.95.038
p
Pitch 55
n
Number of Pins MAXNOMMINMAXNOMMINDimension Limits MILLIMETERSINCHES
*
Units
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .005" (0.127mm) per side.
Notes:
EIAJ Equivalent: SC-74A
Drawing No. C04-091
*
Controlling Parameter
Revised 09-12-05
Note: For the most current package drawings, please see the Microchip Packaging Specification located
at http://www.microchip.c om /p a ck agi ng
TC2014/2015/2185
DS21662F-page 14 2001-2012 Microchip Technology Inc.
NOTES:
2001-2012 Microchip Technology Inc. DS21662F-page 15
TC2014/2015/2185
APPENDIX A: REVISION HISTORY
Revision F (December 2012)
• Added a note to each package outline drawing.
Revision E (May 2006)
• Page 1: Added overtemperature to bullet for over-
current p rote cti on in fea ture s and ge nera l d es cri p-
tion verbiage.
• Page 3: Added Thermal Shutdown die Tempera-
ture to electrical characteristics table.
• Page 3: Added Thermal Characteristics Table.
• Page 5: Added new section 5.1 and new ver-
biage.
• Page 13: Upda ted pack age outlin e dr awin g.
Revision D (November 2004)
• Page 2: Changed Absolute Maximum Ratings
from 6.5V to 7.0V.
• Packagi ng Informatio n: Ad ded pa ck ag e c ode s f or
2.6V and 5.0V options.
• Product Identification System: Added 2.6V and
5.0V to Output voltage options.
Revision C (December 2002)
• Numerous changes
Revision B (May 2002)
• Numerous changes
Revision A (May 2001)
• Original Release of this Document.
TC2014/2015/2185
DS21662F-page 16 2001-2012 Microchip Technology Inc.
NOTES:
2001-2012 Microchip Technology Inc. DS21662F-page 17
TC2014/2015/2185
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
TC2014/2015/2185
DS21662F-page 18 2001-2012 Microchip Technology Inc.
NOTES:
2001-2012 Microchip Technology Inc. DS21662F-page 19
Information contained in this publication regarding device
applications and t he lik e is provid ed only for your c on ve nience
and may be supersed ed by u pdates . I t is y our resp o ns i bil it y to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash
and UNI/O are registered trademarks of Microchip T echnology
Incorporated in the U.S.A. and other countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MTP, SEEVAL and The Embedded Control Solutions
Company are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
Analog-for-the-Digital Age, Application Maestro, BodyCom,
chipKIT, chipKIT logo, CodeGuard, dsPICDEM,
dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONIT OR, FanSense, HI- TIDE, In-Circ u it Serial
Programm ing, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O,
Total Endurance, TSHARC, UniWinDriver , WiperLock, ZENA
and Z-Scale are trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip T echnology Incorporated
in the U.S.A.
GestIC and ULPP are registered trademarks of Microchip
Technology Germany II GmbH & C o. & KG, a subsidiary of
Microchip Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2001-2012, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 9781620768884
Note the following details of the code protection feature on Microchip devices:
• Microchip products meet the specification contained in their particular Microchip Data Sheet.
• Microchip believes that its family of products is one of t he most secure famili es of its kind on the market today, when used in the
intended manner and under normal conditions.
• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
• Microchip is willing to work with the customer who is concerned about the integrity of their code.
• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is c onstantly evolving. We a t Microc hip are co m mitted to continuously improving the code prot ect ion featur es of our
products. Attempts to break Microchip’ s code protection feature may be a violation of the Digital Mill ennium Copyright Act. If such act s
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopp ing
devices, Serial EEPROMs, microperiph erals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
QUALITY MANAGEMENT S
YSTEM
CERTIFIED BY DNV
== ISO/TS 16949 ==
DS21662F-page 20 2001-2012 Microchip Technology Inc.
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