© Semiconductor Components Industries, LLC, 2011
November, 2011 Rev. 8
1Publication Order Number:
BC846AWT1/D
BC846, SBC846, BC847,
SBC847, BC848 Series
General Purpose
Transistors
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SC70/SOT323 which is
designed for low power surface mount applications.
Features
AECQ101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage
BC846, SBC846
BC847, SBC847
BC848
VCEO
65
45
30
V
Collector-Base Voltage
BC846, SBC846
BC847, SBC847
BC848
VCBO
80
50
30
V
Emitter-Base Voltage
BC846, SBC846
BC847, SBC847
BC848
VEBO
6.0
6.0
5.0
V
Collector Current Continuous IC100 mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR5 Board,
(Note 1) TA = 25°C PD150 mW
Thermal Resistance,
JunctiontoAmbient RqJA 833 °C/W
Junction and Storage Temperature TJ, Tstg 55 to
+150
°C
1. FR5 = 1.0 x 0.75 x 0.062 in.
http://onsemi.com
SC70/SOT323
CASE 419
STYLE 3
MARKING DIAGRAM
XX = Specific Device Code
M = Month Code
G= PbFree Package
(Note: Microdot may be in either location)
XX MG
G
COLLECTOR
3
1
BASE
2
EMITTER
1
2
3
See detailed ordering and shipping information in the package
dimensions section on page 12 of this data sheet.
ORDERING INFORMATION
BC846, SBC846, BC847, SBC847, BC848 Series
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage BC846, SBC846 Series
(IC = 10 mA) BC847, SBC847 Series
BC848 Series
V(BR)CEO 65
45
30
V
CollectorEmitter Breakdown Voltage BC846, SBC846 Series
(IC = 10 mA, VEB = 0) BC847, SBC847 Series
BC848 Series
V(BR)CES 80
50
30
V
CollectorBase Breakdown Voltage BC846, SBC846 Series
(IC = 10 mA) BC847, SBC847 Series
BC848 Series
V(BR)CBO 80
50
30
V
EmitterBase Breakdown Voltage BC846, SBC846 Series
(IE = 1.0 mA) BC847, SBC847 Series
BC848 Series
V(BR)EBO 6.0
6.0
5.0
V
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ICBO
15
5.0
nA
mA
ON CHARACTERISTICS
DC Current Gain BC846A, BC847A, SBC847A, BC848A
(IC = 10 mA, VCE = 5.0 V) BC846B, SBC846B, BC847B, SBC847B, BC848B
BC847C, SBC847C, BC848C
(IC = 2.0 mA, VCE = 5.0 V) BC846A, BC847A, SBC847A, BC848A
BC846B, SBC846B, BC847B, SBC847B, BC848B
BC847C, SBC847C, BC848C
hFE
110
200
420
90
150
270
180
290
520
220
450
800
CollectorEmitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VCE(sat)
0.25
0.6
V
Base Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VBE(sat)
0.7
0.9
V
Base Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
VBE(on) 580
660
700
770
mV
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
fT100 MHz
Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo 4.5 pF
Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) NF 10 dB
BC846, SBC846, BC847, SBC847, BC848 Series
http://onsemi.com
3
BC846A, BC847A, SBC847A, BC848A
Figure 1. DC Current Gain vs. Collector
Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
300
0.10.010.0010.0001
0
0.02
0.18
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.0
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOREMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASEEMITTER
SATURATION VOLTAGE (V)
VBE(on), BASEEMITTER VOLTAGE (V)
1
VCE = 1 V
150°C
55°C
25°C
IC/IB = 20 150°C
55°C
25°C
0.4
0.9 IC/IB = 20
150°C
55°C
25°C
0.4
0.7
1.1 VCE = 5 V
150°C
55°C
25°C
0.04
0.06
0.08
0.10
0.12
0.14
0.16
BC846, SBC846, BC847, SBC847, BC848 Series
http://onsemi.com
4
BC846A, BC847A, SBC847A, BC848A
Figure 5. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 6. BaseEmitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
1.6
1.2
2.0
2.8
2.4
1.2
1.6
2.0
0.02 1.0 10
020
0.1
0.4
0.8
VCE, COLLECTOR-EMITTER VOLTAGE (V)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
0.2 1.0 10 100
-55°C to +125°CTA = 25°C
IC = 50 mA IC = 100 mA
IC = 200 mA
IC =
20 mA
IC =
10 mA
1.0
Figure 7. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
Figure 8. CurrentGain Bandwidth Product
IC, COLLECTOR CURRENT (mAdc)
0.4 0.6 1.0 10 20
1.0 2.0 6.0 40
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
0.7 1.0 10 202.0 50
307.05.03.00.5
VCE = 10 V
TA = 25°C
C, CAPACITANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
T
0.8 4.0 8.0
TA = 25°C
Cob
Cib
BC846, SBC846, BC847, SBC847, BC848 Series
http://onsemi.com
5
BC846B, SBC846B
Figure 9. DC Current Gain vs. Collector
Current
Figure 10. Collector Emitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
300
400
600
0.10.010.0010.0001
0
0.15
0.30
Figure 11. Base Emitter Saturation Voltage vs.
Collector Current
Figure 12. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.0
1.1
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOREMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASEEMITTER
SATURATION VOLTAGE (V)
VBE(on), BASEEMITTER VOLTAGE (V)
1
VCE = 1 V
150°C
55°C
25°C
IC/IB = 20 150°C
55°C
25°C
0.4
0.9
IC/IB = 20
150°C
55°C
25°C
0.4
0.7
1.1 VCE = 5 V
150°C
55°C
25°C
500 0.25
0.20
0.05
0.10
BC846, SBC846, BC847, SBC847, BC848 Series
http://onsemi.com
6
BC846B, SBC846B
Figure 13. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 14. BaseEmitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
1.0
1.2
1.6
2.0
0.02 1.0 10
020
0.1
0.4
0.8
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
0.2 2.0 10 200
1.0
TA = 25°C
200 mA
50 mA
IC =
10 mA
0.05 0.2 0.5 2.0 5.0
100 mA
20 mA
1.4
1.8
2.2
2.6
3.0
0.5 5.0 20 50 100
-55°C to 125°C
qVB for VBE
Figure 15. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
40
Figure 16. CurrentGain Bandwidth Product
IC, COLLECTOR CURRENT (mA)
0.1 0.2 1.0 50
2.0 2.0 10 100
100
200
500
50
20
20
10
6.0
4.0
1.0 10 50 100
5.0
VCE = 5 V
TA = 25°C
C, CAPACITANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT
T
0.5 5.0 20
TA = 25°C
Cob
Cib
BC846, SBC846, BC847, SBC847, BC848 Series
http://onsemi.com
7
BC847B, SBC847B, BC848B
Figure 17. DC Current Gain vs. Collector
Current
Figure 18. Collector Emitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
600
0.10.010.0010.0001
0
0.05
0.30
Figure 19. Base Emitter Saturation Voltage vs.
Collector Current
Figure 20. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.1
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOREMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASEEMITTER
SATURATION VOLTAGE (V)
VBE(on), BASEEMITTER VOLTAGE (V)
1
VCE = 1 V
150°C
55°C
25°C
IC/IB = 20
150°C
55°C
25°C
0.4
0.9
IC/IB = 20
150°C
55°C
25°C
0.4
0.7
1.1 VCE = 5 V
150°C
55°C
25°C
0.10
0.15
0.20
0.25
300
400
500
1.0
BC846, SBC846, BC847, SBC847, BC848 Series
http://onsemi.com
8
BC847B, SBC847B, BC848B
Figure 21. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 22. BaseEmitter Temperature
Coefficient
IC, COLLECTOR CURRENT (mA)
1.6
1.2
2.0
2.8
2.4
1.2
1.6
2.0
0.02 1.0 10
020
0.1
0.4
0.8
VCE, COLLECTOR-EMITTER VOLTAGE (V)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
0.2 1.0 10 100
-55°C to +125°CTA = 25°C
IC = 50 mA IC = 100 mA
IC = 200 mA
IC =
20 mA
IC =
10 mA
1.0
Figure 23. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
Figure 24. CurrentGain Bandwidth Product
IC, COLLECTOR CURRENT (mAdc)
0.4 0.6 1.0 10 20
1.0 2.0 6.0 40
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
0.7 1.0 10 202.0 50
307.05.03.00.5
VCE = 10 V
TA = 25°C
C, CAPACITANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
T
0.8 4.0 8.0
TA = 25°C
Cob
Cib
BC846, SBC846, BC847, SBC847, BC848 Series
http://onsemi.com
9
BC847C, SBC847C, BC848C
Figure 25. DC Current Gain vs. Collector
Current
Figure 26. Collector Emitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
1000
0.10.010.0010.0001
0
0.05
0.30
Figure 27. Base Emitter Saturation Voltage vs.
Collector Current
Figure 28. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.1
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOREMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASEEMITTER
SATURATION VOLTAGE (V)
VBE(on), BASEEMITTER VOLTAGE (V)
1
VCE = 1 V
150°C
55°C
25°C
IC/IB = 20
150°C
55°C
25°C
0.4
0.9
IC/IB = 20
150°C
55°C
25°C
0.4
0.7
1.1 VCE = 5 V
150°C
55°C
25°C
0.10
0.15
0.20
0.25
300
400
500
1.0
600
700
800
900
BC846, SBC846, BC847, SBC847, BC848 Series
http://onsemi.com
10
BC847C, SBC847C, BC848C
Figure 29. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 30. BaseEmitter Temperature
Coefficient
IC, COLLECTOR CURRENT (mA)
1.6
1.2
2.0
2.8
2.4
1.2
1.6
2.0
0.02 1.0 10
020
0.1
0.4
0.8
VCE, COLLECTOR-EMITTER VOLTAGE (V)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
0.2 1.0 10 100
-55°C to +125°CTA = 25°C
IC = 50 mA IC = 100 mA
IC = 200 mA
IC =
20 mA
IC =
10 mA
1.0
Figure 31. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
Figure 32. CurrentGain Bandwidth Product
IC, COLLECTOR CURRENT (mAdc)
0.4 0.6 1.0 10 20
1.0 2.0 6.0 40
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
0.7 1.0 10 202.0 50
307.05.03.00.5
VCE = 10 V
TA = 25°C
C, CAPACITANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
T
0.8 4.0 8.0
TA = 25°C
Cob
Cib
BC846, SBC846, BC847, SBC847, BC848 Series
http://onsemi.com
11
1 mS
Thermal Limit
1 S
Figure 33. Safe Operating Area for
BC846A, BC846B
Figure 34. Safe Operating Area for
BC847A, BC847B, BC847C
VCE, COLLECTOR EMITTER VOLTAGE (V) VCE, COLLECTOR EMITTER VOLTAGE (V)
100101
0.001
0.01
0.1
1
1001010.1
0.001
0.01
0.1
1
Figure 35. Safe Operating Area for
BC848A, BC848B, BC848C
VCE, COLLECTOR EMITTER VOLTAGE (V)
1001010.1
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
100 mS 10 mS
1 mS
Thermal Limit
1 S
100 mS 10 mS
1 mS
Thermal Limit
1 S
100 mS 10 mS
BC846, SBC846, BC847, SBC847, BC848 Series
http://onsemi.com
12
DEVICE ORDERING AND SPECIFIC MARKING INFORMATION
Device Specific Marking Code Package Shipping
BC846AWT1G 1A SC70 (SOT323)
(PbFree) 3,000 / Tape & Reel
BC846BWT1G
1B SC70 (SOT323)
(PbFree) 3,000 / Tape & Reel
SBC846BWT1G
BC847AWT1G
1E SC70 (SOT323)
(PbFree) 3,000 / Tape & Reel
SBC847AWT1G
BC847BWT1G
1F SC70 (SOT323)
(PbFree) 3,000 / Tape & Reel
SBC847BWT1G
BC847CWT1G
1G SC70 (SOT323)
(PbFree) 3,000 / Tape & Reel
SBC847CWT1G
BC847CWT3G 1G SC70 (SOT323)
(PbFree) 10,000 / Tape & Reel
BC848AWT1G 1J SC70 (SOT323)
(PbFree) 3,000 / Tape & Reel
BC848BWT1G 1K SC70 (SOT323)
(PbFree) 3,000 / Tape & Reel
BC848CWT1G 1L SC70 (SOT323)
(PbFree) 3,000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Spe-
cifications Brochure, BRD8011/D.
BC846, SBC846, BC847, SBC847, BC848 Series
http://onsemi.com
13
PACKAGE DIMENSIONS
SC70 (SOT323)
CASE 41904
ISSUE N
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
AA2
D
e1
b
e
E
A1
c
L
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
0.05 (0.002)
1.9
0.075
0.65
0.025
0.65
0.025
0.9
0.035
0.7
0.028 ǒmm
inchesǓ
SCALE 10:1
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.80 0.90 1.00 0.032
INCHES
A1 0.00 0.05 0.10 0.000
A2 0.70 REF
b0.30 0.35 0.40 0.012
c0.10 0.18 0.25 0.004
D1.80 2.10 2.20 0.071
E1.15 1.24 1.35 0.045
e1.20 1.30 1.40 0.047
0.035 0.040
0.002 0.004
0.014 0.016
0.007 0.010
0.083 0.087
0.049 0.053
0.051 0.055
NOM MAX
L
2.00 2.10 2.40 0.079 0.083 0.095
HE
e1 0.65 BSC
0.38
0.028 REF
0.026 BSC
0.015
0.20 0.56 0.008 0.022
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 8002829855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81358171050
BC846AWT1/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
Fax: 3036752176 or 8003443867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative