MJD44H11
MJD45H11
COMPLEMENTARY SILICON PNP TRANSISTORS
■STMicr o electronics PREF E RRED
SALESTYPES
■LOW COLLE CT O R-E MI TTE R SA TU RAT ION
VOLTAGE
■FAST SWITCHING SPEED
■SURFACE -MO UNT ING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
APPLICATIONS
■GENERAL PURPOSE SWITCHING
■GENERAL PURPOSE AMPLIFIER
DESCRIPTION
The MJD44H11 is a Silicon Multiepitaxial Planar
NPN transistor mounted in DPAK plastic
package.
It is inteded for various switching and general
purpose applications.
Th e complementary PNP type is MJD 4 5H1 1
®
INT E R NAL SCH E M ATI C DIAG RA M
May 2003
13
DPAK
TO-252
(Suffix "T4")
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN MJD44H11
PNP MJD45H11
VCEO Collector-Emitter Voltage (IB = 0) 80 V
VEBO Emitter-Base Voltage (IC = 0) 5 V
ICCollector Current 8 A
ICM Collector Peak Current 16 A
Ptot Total Dissipation at Tc ≤ 25 oC20 W
Tstg Storage Temperature -55 to 150 oC
TjMax. Operating Junction Temperature 150 oC
For PNP types the v alues a re intented negative.
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