~ ~2 3 SEMICONDUCTORS INC OE D B sisuuso Qoo0303 8 i T-24 High Voltage Transistors z MAXIMUM RATINGS VcE(SAT} Cob Tre | = | case Ic | VcEo HFE ft Cre+ NO. a Pg lcm: Ic VCE + max le min max (mW) (mA) (v) min max | (mA) (v) (v) (ma) (MHz) (pF) BC 236 N TO-106 300 50 120 25 - 10 5 2 50 40 8 BC 285 N TO-18 360 160 120 30 -_ 5 30 0.5 10 50 4 BC 312 N TO-39 800 150 100 50 200 30 10 2 50 - 6+ BC 393 P TO-18 400 100 180 50 _ 10 10 0.3 10 50 7 BC 394 . N TO-18 400 100 180 30 - 10 10 0.3 10 50 5 BC 530 P TO-92A 625 100 120 40 180 10 5 0.25 50 100 6 BC 531 P TO-92A 625 100 150 60 240 10 5 0.25 50 100 6 BC 532 N TO-92A 625 100 140 60 250 10 5 0.15 10 100 6 BC 533 N TO-92A 625 100 160 80 250 10 5 0.15 10 100 6 BCW 50 N TO-18 500 100 120 18 - 3 i0 - ~_ 50 5 BCX 27 N TO-92F 350 200 80 70 6400 10 5 0.25 100 100 6 BCX 28 P TO-92F 350 200 80 70 8400 10. 5 0.25 100 100 6 BCX 29 N TO-92F 350 200 100 70 140 10 5 0.25 100 100 6 BCX 30 P TO-92F 350 200 100 70 140 10 5 0.25 100 100 6 BD 115 N | TO-39 800 150 180 22 - 50 100 9 100 - - BF 117 N TO-39 680 100 140 25 - 30 10 1 30 40 4 BF 120 N TO-18 300 50 220 20 - 10 10 2 10 55 7 BF 137 N TO-39 680 100 160 25 - 30 10 1 30 50 4 BF 156 N TO-339 800 . 100 120 30 - 30 10 2 50 50 6 BF 157 N TO-39 800 100 150 30 - 30 10 2 50 50 6 BF 174 N TO-39 800 100 150 30 - 10 50 1 25 40 3.5 BF 177 N TO-39 800 50 60 20 - 15 10 - - 120+ 3.5 BF 178 N TO-39 800 50 115 20 - 30 20 - - 120+ 3.5 BF 179 N TO-39 800 50 115 20 - 20 15 _ - 120+ 3.5 BF 257 N | TO-39 800 100 160 25 ~ 30 10 1 30 50 5 BF 258 N | TO-39 800 100 250 25 - 30 10 1 30 50 5 BF 259 N | TO-39 800 100 300 25 - 30 10 1 30 50 5 BF 294 N TO-39 800 - 160 30 - 10 50 - - 40 3.5 BF 297 N TO-92F 625 100 160 30 150 30 10 1 30 50 5 BF 298 N TO-92F 625 100 250 30 150 30 10 1 30 50 5 BF 299 N TO-92F 625 100 300 30 6.160 30 10 1 30 50 5 BF 305 N | TO-39 600 50 150 20 - 30 20 _ - 50 3.5 BF 336 N TO-39 2800 100 180 20 - 30 10 - - 50 3.5 BF 337 N TO-39 800 100 200 20 - 30 10 - - 50 3.5 BF 338 N TO-39 800 100 225 20 - 30 10 - - 50 3.5 BF 391 N TO-924 625 500 200 40 - 10 10 2 20 50 2 BF 391P N } TO-92PA 750 500 - 200 25 - 1 10 2 20 50 2- BF 392 N TO-92A 625 500 - 250 40 - 10 10 2 20 50 2: BF 392P N TO-92PA 750 500 250 25 - 1 10 2 20 50 2 BF 393 N TO-92A 625 500 - 300 40 - 10 10 2 20 50 2 BF 393P N TO-92PA 750 500 300 40 - 10 10 2 20 50 2- BF 397 P TO-92F 625 100 30 40 250 10 10 0.5 10 - - BF 398 P TO-92F 625 100 150 30 200 10 10 0.5 410 - - BFR 57 N TO-39 800 100 160 25 - 30 10 1 30 90+ 4.2+ BFR 58 N TO-39 800 100 250 25 - 30 10 i 30 90+ 4.2+ BFR 59 N TO-39 800 100 300 25 ~ 30 10 1 30 90+ 4.2+ BFS 89 N JTO-39 580 100 300 25 ~- 50 10 1 30 90+ 3te BFS 90 P TO-39 800 100 140 30 - 10 10 1 30 - - BFS 91 Pp TO-39 800 100 80 40 - 10 10 0.5 10 - = + Typical value 54 SEMICONDUCTORS INC OTE D B os1suL50 0000304 0 i 7-29-23 High Voltage Transistors z MAXIMUM RATINGS VCE(SAT) Cob Tyre | & | case Ic | Vceo HFE fr | Cre: NO. < Pq lom: | Vcev: . tc VcE max le min max 9 (mw) (mA) (v} min max | (mA) (v) (v) (mA) (MHz) (pF) BFT 47 N | TO-39 50004 100 160 25 - 30 10 1 30 50 - BFT 48 N | TO-39 50004 100 250 25 - 30 10 1 30 50 - BFT 49 N | TO-39 50004 100 300 25 - 30 10 1 30 50 ~ BFT 57 N | TO-18 360 200 160 25 - 30 10 1 30 110+ .5+ BFT 58 N | TO-18 360 200 250 25 - 30 10 1 30 110+ 5.5+ BFT 59 N | TO-18 360 200 300 25 - 30 10 1 30 110+ 5,5+ BFW 43 P TO-18 400 100 150 40 - 10 10 0.5 10 60 7 BFW 44 P TO-39 700 100 150 40 - 10 10 0.5 10 60 7 BFW 45 N | TO-39 800 50 130 20 120 50 20 10 50 80 6 BFX 98 N | TO-39 800 100 150 30 - 25 10 1 25 40 8 BFY 57 N | TO-39 800 100 125 30 86150 30 10 71.6 50 40 12 BFY 80 N ] TO-18 500 100 90 30 - 2 10 0.9 2 50 8 BSS 38 N | TO-92F 3006 100 80 20 - 4 1 07 4 60 - BSV 68 P TO-18 250 100 100 30 - 25 5 0.25 25 50 5 BSY 79 N | TO-18 300 30 120 30 = 1 1 0.5 2 400+ 4+ CX 703 N | TO-92A* 800* 100 160 40 200 10 10 1.5 20 50 3 CX 703A N } TO-92A* g00* 100 200 40 200 10 10 1.5 20 50 3 CX 703B N | TO-92A* 8007 100 250 40 200 10 10 1.5 20 50 3s MH 7301 N | TO-220B 1250 100 160 40 - 30 10 1.5 - 30 50 5 MH 7302 N | TO-220B 1250 100 200 40 - 30 10 1.5 30 50 5 MH 7303 N | TO-220B 1250 100 250 40 - 30 10 1.5 30 50 5 MPSA 42 N | TO-92A 625 100 300 40 _ 30 10 0.5 20 50 3 MPSA 43 N | TO-92A 625 100 200 50 200 30 10 04 20 50 4 MPSD 01 N | TO-92A 625 100 200 20 _ 30 10 - - 40 3+ MPSD 02 N | TO-92A 350 50 140 25 - 10 10 - - 40 - MPSD 03 N | TO-92A 350 50 100 25 - 10 10 - - 40 - MPSD 52 P TO-92A 350 50 140 25 _ 10 10 - - 40 - MPSD 53 P TO-92A 350 50 100 25 - 10 10 - - 40 - MPSL 01 N | TO-924 500 100 120 50 300 16 5 0.3 50 60 8 MPSL 51 P TO-92A 625 600 100 40 250 50 5 0.3 50 60 8 2N 3114 N | TO-39 800 200 150 30 =6120 30 10 1 50 40 9 2N 3634 P TO-39 600 100 140 50 160 s0 10 0.5 50 150 10 2N 3742 N j} TO-39 1000 100 300 20 200 30 10 1 10 30 6 2N 3743 N | TO-39 1000 50 300 25 250 30 10 8 30 30 15 2N 3923 N j TO-39 800 100 150 30 = 120 25 10 1 25 40 3.5 2N 4926 N | TO-39 1000 50 200 20 =200 30 10 1 10 30 6 2N 4927 N | TO-39 1000 50 250 20 = =200 30 10 i 10 30 6 2N 4928 P TO-39 600 100 100 25 200 10 10 0.5 10 100 6 2N 5058 N j} TO-39 1000 150 300 35 150 30 25 1 30 30 10 2N S059 N TO-39 1000 150 250 30 8=6150 30 25 1 30 30 10 2N 5400 P TO0-92A 350 600 120 40 180 10 5 0.5 50 100 6 2N 5401 P TO-92A 350 600 150 60 240 10 5 0.5 50 100 6 2N 5550 N | TO-92A 350 600 140 60 250 10 5 0.25 50 100 6 2N 5551 N | TO-924 350 600 160 80 250 10 5 0.2 50 100 6 2N 6218 N | TO-92F* 800* 50 300 20 _ 20 10 1 10 50 5 2N 6219 N | TO-92F* 800* 50 250 20 - 20 10 1 10 50 5 2N 6220 N | TO-92F* 800* 50 200 20 - 20 10 2 20 50 5 2N 6221 N | TO-92F* 800* 50 150 20 - 20 10 2 20 50 5 ATC=28C @TA=75C *Withx-67 heatsink + Typical vatue 55 SEMICONDUCTORS INC OE D B arsieso Oo00305 1 i TT. 27-Aa3 High Voltage Transistors z MAXIMUM RATINGS VCEISAT) Cob TYPE & | CASE Ic VcEO HFE fT Cre* NO. Ss Pg lem: | VceR* tc VcE max lc min max (mW) (mA) (v) min max | (mA) (v) (v) (ma) (MHz) (pF) 2SA 637 P TO-18 300 50 150 30 - 15 3 1 15 40 10 2SA 675 P TO-92B 250 100 80 50 300# 20 3 1.5 20 400 10 2SA 685 P TO-92B 300 50 150 30 - 15 3 1 15 40 10 2SA 749 P TO-82B 250 50 100 50 - 20 1 0.3 50 40 3.5+ 2SC 505 N | TO-39 600 200 300 40 140# 50 5 1 50 30 20 2SC 506 N | TO-39 600 200 200 40 140# 50 5 1 50 30 20 2SC 507 N | TO-39 750 100 120 40 240# 10 5 0.8 10 100 4 2SC 526 N TO-39 2300 55 150 20 - 45 20 - - 80 3.5 2SC 1012 N TO-39 25004 60 165 20 - 40 20 1 10 80 3 28C 1012A| N TO-39 25004 60 250 20 - 40 20 10 60 80 3 28C 1033 N TO-18 300 25 150 30 - 5 10 i 5 75 7 2SC 1048 N TO-39 600 50 200 40 200# 25 10 13 25 40 4.2 @Tc= 25C 4TcS 125C} #HeE groupings available + Typical value 56 4349 af T~G/ -o2 O SEMICONDUCTORS INC OTE D i 8136650 0000323 Packaging Information SCR TRIAC 1. CATHODE 1. CATHODE 1. MT 1 2. GATE 2. GATE 2. GATE 3. ANODE 3. ANODE 3. MT 2 ~ go. ba 4 : we SEATIN 210 PACKAGING bare /ti ae ii sear .500 MIN INFORMATION UOEt-stcans Tt _O00 016 * 136 138 ob be sewn ee TO-18 (PLASTIC) TO-92 SCR TRIAC 1. CATHODE 1. CATHODE 1. MT 1 2. GATE 2. GATE 2. GATE 3. ANODE 3. ANODE 3. MT 2 e370 300 aaa ass CATHODE = | see di a 240) oe PLANE B78 Nw 210 500 MIN. | im O19 M40 ie SEATING PLANE ej 70 +0 Go gS 5 TT]. tos 930 | SOO MIN. , , 27 Sas ax om. cia t! WAX x00 MAX."] S5e 3 = 422 ANOOE f % ~ 22 UNF - 2A TO-48D 74 c-04 ee weeps eg eee