MMBT5551 160V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data * * * * * * * * BVCEO > 160V Ideal for Low Power Amplification and Switching Complementary PNP Type Available (MMBT5401) Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: SOT-23 Case Material: Molded Plastic, "Green" molding compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish-Matte Tin Plated Leads. Solderable per MILSTD-202, Method 208 Weight: 0.008 grams (approximate) * * * SOT23 C E C B B E Top View Top View Pin-Out Device Symbol Ordering Information (Note 4) Part Number MMBT5551-7-F Notes: Compliance AEC-Q101 Marking K4N Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information K4N = Product Type Marking Code YM = Date Code Marking Y = Year (ex: B = 2014) M = Month (ex: 9 = September) Date Code Key Year Code Month Code 2010 X Jan 1 2011 Y Feb 2 MMBT5551 Document number: DS30061 Rev. 12 - 2 Mar 3 2012 Z Apr 4 2013 A May 5 Jun 6 1 of 6 www.diodes.com 2014 B Jul 7 2015 C Aug 8 Sep 9 2016 D Oct O 2017 E Nov N Dec D August 2014 (c) Diodes Incorporated MMBT5551 Absolute Maximum Ratings (@TA = +25C unless otherwise specified) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 1) Thermal Characteristics Symbol VCBO VCEO VEBO IC Value 180 160 6.0 600 Unit V V V mA Value 300 417 -55 to +150 Unit mW C/W C (@TA = +25C unless otherwise specified) Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Symbol PD RJA TJ, TSTG (Note 5) (Note 5) ESD Ratings (Note 6) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol ESD HBM ESD MM Value 4,000 400 Unit V V JEDEC Class 3A C 5. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 6. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 400 PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 50 0 0 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 1 Power Dissipation vs. Ambient Temperature 25 MMBT5551 Document number: DS30061 Rev. 12 - 2 2 of 6 www.diodes.com August 2014 (c) Diodes Incorporated MMBT5551 Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 7) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage @TA = 25C unless otherwise specified Symbol Min Max Unit V(BR)CBO V(BR)CEO V(BR)EBO 180 160 6.0 Collector Cutoff Current ICBO 50 Emitter Cutoff Current ON CHARACTERISTICS (Note 7) IEBO 50 V V V nA A nA DC Current Gain hFE 80 80 30 Collector-Emitter Saturation Voltage VCE(SAT) 250 0.15 0.20 Base-Emitter Saturation Voltage VBE(SAT) 1.0 V Cobo 6.0 pF Small Signal Current Gain hfe 50 250 Current Gain-Bandwidth Product fT 100 300 MHz Noise Figure nF 8.0 dB SMALL SIGNAL CHARACTERISTICS Output Capacitance Notes: V Test Condition IC = 100A, IE = 0 IC = 1.0mA, IB = 0 IE = 10A, IC = 0 VCB = 120V, IE = 0 VCB = 120V, IE = 0, TA = 100C VEB = 4.0V, IC = 0 IC = 1.0mA, VCE = 5.0V IC = 10mA, VCE = 5.0V IC = 50mA, VCE = 5.0V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA VCB = 10V, f = 1.0MHz, IE = 0 VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 10V, IC = 10mA, f = 100MHz VCE = 5.0V, IC = 200A, RS = 1.0k, f = 1.0kHz 7. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. MMBT5551 Document number: DS30061 Rev. 12 - 2 3 of 6 www.diodes.com August 2014 (c) Diodes Incorporated MMBT5551 Typical Electrical Characteristics (@TA = +25C, unless otherwise specified.) 0.15 1,000 0.14 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN VCE = 5V TA = 150C 100 TA = 25C TA = -50C 10 0.13 0.12 0.11 0.10 0.09 0.08 0.07 0.06 0.05 1 0.04 100 10 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs. Collector Current 1 1.0 0.9 TA = -50C 0.8 0.7 VCE = 5V 100 0.6 TA = 25C 0.5 0.4 TA = 150C 0.3 0.2 0.1 100 10 1,000 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1,000 VCE = 5V fT, GAIN-BANDWIDTH PRODUCT (MHz) VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1 10 1 100 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Base-Emitter Turn-On Voltage vs. Collector Current MMBT5551 Document number: DS30061 Rev. 12 - 2 4 of 6 www.diodes.com 10 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Gain-Bandwidth Product vs. Collector Current August 2014 (c) Diodes Incorporated MMBT5551 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. All 7 H K1 J K a M A L C L1 B D SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 8 All Dimensions in mm Suggested Pad Layout Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. Y Z C X MMBT5551 Document number: DS30061 Rev. 12 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 5 of 6 www.diodes.com August 2014 (c) Diodes Incorporated MMBT5551 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2014, Diodes Incorporated www.diodes.com MMBT5551 Document number: DS30061 Rev. 12 - 2 6 of 6 www.diodes.com August 2014 (c) Diodes Incorporated