BC817-16 / -25 / -40
Document number: DS11107 Rev. 18 - 2 1 of 4
www.diodes.com April 2009
© Diodes Incorporated
BC817-16 / -25 / -40
NPN SURFACE MOUNT SMALL SIG NAL TRANSISTOR
Features
• Ideally Suited for Automated Insertion
• Epitaxial Planar Die Construction
• For Switching, AF Driver and Amplifier Applications
• Complementary PNP Types Available (BC807)
• Lead, Halogen and Antimony Free, RoHS Compliant
• "Green" Device (Notes 3 and 4)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic, “Green” Molding Compound,
Note 4. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
• Pin Connections: See Diagram
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.008 grams (approximate)
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO 45 V
Emitter-Base Voltage VEBO 5.0 V
Collector Current IC 800 mA
Peak Collector Current ICM 1000 mA
Peak Emitter Current IEM 1000 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation at TSB = 50°C (Note 1) PD 310 mW
Thermal Resistance, Junction to Substrate Backside (Note 1) R
θ
SB 320 °C/W
Thermal Resistance, Junction to Ambient Air (Note 1) R
θ
JA 403 °C/W
Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic (Note 2) Symbol Min Max Unit Test Condition
DC Current Gain
Current Gain Group -16
-25
-40 hFE
100
160
250
250
400
600 — VCE = 1.0V, IC = 100mA
Current Gain Group -16
-25
-40
60
100
170
—
—
— — VCE = 1.0V, IC = 300mA
Collector-Emitter Saturation Voltage VCE
(
SAT
)
— 0.7 V IC = 500mA, IB = 50mA
Base-Emitter Voltage VBE — 1.2 V VCE = 1.0V, IC = 300mA
Collector-Emitter Cutoff Current ICES — 100
5.0 nA
µA VCE = 45V
VCE = 25V, T
j
= 150°C
Emitter-Base Cutoff Current IEBO — 100 nA VEB = 4.0V
Gain Bandwidth Product fT 100 — MHz VCE = 5.0V, IC = 10mA,
f = 50MHz
Collector-Base Capacitance CCBO — 12 pF VCB = 10V, f = 1.0MHz
Notes: 1. Device mounted on Ceramic Substrate 0.7mm; 2.5cm2 area.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead. Halogen and Antimony Free.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
Top View Device Schematic
E
B
C
BC817-16 / -25 / -40
Document number: DS11107 Rev. 18 - 2 2 of 4
www.diodes.com April 2009
© Diodes Incorporated
BC817-16 / -25 / -40
0
100
200
300
400
0100200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , SUBSTRATE TEMPERATURE ( C)
Fig. 1 Power Dissipation vs. Substrate Temperature (Note 1)
SB
°
R = 320°C/W
θ
SB
0
100
200
300
400
500
012
I,
C
O
LLE
C
T
O
R
C
U
R
R
EN
T
(mA)
C
V , CO LL ECTO R- EM ITTER VO LTAG E (V)
CE
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
0
20
40
60
80
100
01020
I,
C
O
LLE
C
T
O
R
C
U
R
R
E
N
T
(mA)
C
V , COLLECTOR-EMIT TER VOLTAGE (V)
Fig. 3 Typical Collector Current
vs. Collector-Emitter Vo lt age
CE
10
100
1,000
110
h, D
C
C
U
R
R
EN
T
G
AIN
FE
I , COLLECTOR CURRENT (mA)
Fig. 4 Typical DC Current Gain vs. Collector Current
C
V = 1V
CE
150 C
°
T = 25C
A
°
-50 C
°
100 1,000
0.1
0
0.1
0.2
0.3
0.4
0.5
110
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SATURATION VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 5 Ty pical Collector-Emitter Saturation V o ltage
vs. Collector Current
C
typical
limits
at T = 25 C
A
°
I / I = 10
CB
150 C
°
25 C
°
-50 C
°
100 1,000
0.1
10
100
1,000
1 10 100 1,000
f,
G
AIN-BANDWID
T
H
P
R
O
D
U
C
T
(M
H
z)
T
I , COLLECTOR CURRENT (mA)
Fig . 6 Gain - Bandwidt h Prod uct vs . Collect or Cu r re nt
C
BC817-16 / -25 / -40
Document number: DS11107 Rev. 18 - 2 3 of 4
www.diodes.com April 2009
© Diodes Incorporated
BC817-16 / -25 / -40
Ordering Information (Note 5)
Part Number Case Packaging
BC817-xx-7-F SOT-23 3000/Tape & Reel
*xx = gain group, e.g. BC817-16-7-F.
Notes: 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015
Code J K L M N P R S T U V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Package Outline Dimensions
Suggested Pad Layout
SOT-23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
α 0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
K6x = Product Type Marking Code:
K6A = BC817-16
K6B = BC817-25
K6C = BC817-40
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)
K6x
YM
A
M
JL
D
F
BC
H
K
G
K1
XE
Y
C
Z
BC817-16 / -25 / -40
Document number: DS11107 Rev. 18 - 2 4 of 4
www.diodes.com April 2009
© Diodes Incorporated
BC817-16 / -25 / -40
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