2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V(BR)DSS RDS(ON) max ID max TA = 25C 60V 7.5 @ VGS = 5V 210mA * * * * * * * * Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Notes 3 & 4) Qualified to AEC-Q101 standards for High Reliability Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. * * * * * * Motor control Power Management Functions * * Case: SOT23 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.008 grams (approximate) Drain SOT23 D Gate Source Top View S G Equivalent Circuit Top View Ordering Information (Note 5) Part Number 2N7002-7-F 2N7002-13-F 2N7002Q-7-F Notes: Qualification Commercial Commercial Automotive Case SOT23 SOT23 SOT23 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Product manufactured with Date Code V12 (week 50, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V12 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. 5. For packaging details, go to our website at http://www.diodes.com. K7x Shanghai A/T Site Chengdu A/T Site Date Code Key Year 2002 Code N Month Code Jan 1 2003 P 2004 R Feb 2 2N7002 Document number: DS11303 Rev. 29 - 2 2005 S Mar 3 YM C7x YM Marking Information 2006 T Apr 4 2007 U 2008 V May 5 2009 W K = SAT (Shanghai Assembly/ Test site) C = CAT (Chengdu Assembly/ Test site) 7x= Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) 2010 X Jun 6 1 of 5 www.diodes.com Jul 7 2011 Y 2012 Z Aug 8 2013 A Sep 9 2014 B Oct O 2015 C 2016 D Nov N 2017 E Dec D May 2012 (c) Diodes Incorporated 2N7002 Maximum Ratings @TA = 25C unless otherwise specified Characteristic Drain-Source Voltage Drain-Gate Voltage RGS 1.0M Gate-Source Voltage Symbol VDSS VDGR Continuous Pulsed TA = 25C Steady TA = 85C State TA = 100C TA = 25C Steady TA = 85C State TA = 100C Pulsed Continuous Continuous Drain Current (Note 6) VGS = 10V Continuous Drain Current (Note 7) VGS = 10V Maximum Body Diode Forward Current (Note 7) Value 60 60 20 40 170 120 105 VGSS ID 210 150 135 0.5 2 800 ID IS Pulsed Drain Current (10s pulse, duty cycle = 1%) IDM Units V V V mA mA A mA Thermal Characteristics @TA = 25C unless otherwise specified Characteristic Symbol (Note 6) (Note 7) (Note 6) (Note 7) (Note 7) Total Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Operating and Storage Temperature Range Value 370 540 348 241 91 -55 to 150 PD RJA RJC TJ, TSTG Units mW C/W C Electrical Characteristics @TA = 25C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Static Drain-Source On-Resistance @ TC = 25C @ TC = 125C @ TJ = 25C @ TJ = 125C Symbol Min Typ Max Unit Test Condition BVDSS 60 70 V VGS = 0V, ID = 10A IDSS A VDS = 60V, VGS = 0V IGSS 1.0 500 10 nA VGS = 20V, VDS = 0V VGS(th) 1.0 3.2 4.4 2.5 V 7.5 13.5 VDS = VGS, ID = 250A VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA RDS (ON) ID(ON) gFS VSD 0.5 80 1.0 0.78 1.5 A mS V Ciss Coss Crss 22 11 2.0 50 25 5.0 pF pF pF VDS = 25V, VGS = 0V f = 1.0MHz Gate resistance Rg 120 VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge (VGS = 4.5V) Gate-Source Charge Gate-Drain Charge SWITCHING CHARACTERISTICS (Note 9) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Qg Qgs Qgd 223 82 178 pC VDS = 10V, ID = 250mA tD(on) tr tD(off) tf 2.8 3.0 7.6 5.6 ns VDD = 30V, ID = 0.2A, RL = 150, VGEN = 10V, RGEN = 25 On-State Drain Current Forward Transconductance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: 6. Device mounted on FR-4 PCB, with minimum recommended pad layout 7. Device mounted on 1" x 1" FR-4 PCB with high coverage 2oz. Copper, single sided. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2N7002 Document number: DS11303 Rev. 29 - 2 2 of 5 www.diodes.com May 2012 (c) Diodes Incorporated 2N7002 7 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE () ID, DRAIN-SOURCE CURRENT (A) 1.0 0.8 0.6 0.4 0.2 0 0 4 2 3 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics 1 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE () RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE () 4 3 2 1 0.2 0.4 0.6 0.8 ID, DRAIN CURRENT (A) Fig. 2 On-Resistance vs. Drain Current 1.0 6 2.5 2.0 1.5 VGS = 10V, ID = 200mA 5 4 ID = 500mA 3 ID = 50mA 2 1 0 0 -30 -5 20 45 70 95 120 145 Tj, JUNCTION TEMPERATURE (C) Fig. 3 On-Resistance vs. Junction Temperature 10 2 4 6 8 10 12 14 16 18 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage 400 9 350 Pd, POWER DISSIPATION (mW) VGS, GATE SOURCE CURRENT (V) 5 0 0 5 3.0 1.0 -55 6 8 7 6 5 4 3 2 300 250 200 150 100 50 1 0 0 0.2 0.6 0.8 0.4 ID, DRAIN CURRENT (A) Fig. 5 Typical Transfer Characteristics 2N7002 Document number: DS11303 Rev. 29 - 2 1 3 of 5 www.diodes.com 0 50 75 25 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 6 Max Power Dissipation vs. Ambient Temperature 0 May 2012 (c) Diodes Incorporated 2N7002 Package Outline Dimensions A SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0 8 All Dimensions in mm B C H K M K1 D J F L G Suggested Pad Layout Y Z C X 2N7002 Document number: DS11303 Rev. 29 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 4 of 5 www.diodes.com May 2012 (c) Diodes Incorporated 2N7002 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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