© 2010 IXYS All rights reserved 1 - 2
IXYS reserves the right to change limits, test conditions and dimensions. 20100709b
VUC 36
IdAVM =39A
ITAVM =31A
VRRM = 1200/1600 V
VRSM VRRM Type
VV
1300 1200 VUC 36-12go2
1700 1600 VUC 36-16go2
Symbol Conditions Maximum Ratings
Diode Thyristor
IdAV TK = 85°C, module 34 - A
IdAVM module 39 - A
ITAVM TK = 85°C, DC - 31 A
IFSM, ITSM TVJ = 45°C t = 10 ms (50 Hz), sine 300 400 A
VR = 0 t = 8.3 ms (60 Hz), sine 330 440 A
TVJ = TVJM t = 10 ms (50 Hz), sine 270 360 A
VR = 0 t = 8.3 ms (60 Hz), sine 300 400 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 450 800 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 460 810 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 365 650 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 380 670 A2s
(di/dt)cr TVJ = TVJM repetitive, IT = 50 A 150 A/µs
f = 400 Hz, tP = 200 µs
VD = 2/3 VDRM
IG = 0.3 A non repetitive, IT = ITAVM 500 A/µs
diG /dt = 0.3 A/µs
(dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM 200 V/µs
RGK = ∞; method 1 (linear voltage rise)
VRGM 10 V
PGM TVJ = TVJM tp = 30 µs <10W
IT = ITAVM tp = 10 ms <1W
PGAVM 0.5 W
TVJ -40...+125 °C
TVJM 125 °C
Tstg -40...+125 °C
VISOL 50/60 Hz, RMS t = 1 min 3000 V~
IISOL < 1 mA t = 1 s 3600 V~
MdMounting torque (M5) 2-2.5 Nm
(10-32 UNF) 18-22 lb.in.
Weight typ. 28 g
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated
Three Phase
Rectifier Bridge
with Fast Diodes and "Softstart" Thyristor
2
1
34
5678
Features
•Package with DCB ceramic base plate
•Isolation voltage 3600 V~
•Planar passivated chips
•Fast recovery diodes to reduce EMI
•Separate thyristor for softstart
•Solderable terminals
•UL registered E 72873
Applications
•Input rectifier for switching power
supplies (SMPS)
•Softstart capacitor charging
•Electric drives and auxiliaries
Advantages
•Easy to mount with two screws
•Space and weight savings
•Improved temperature & power cycling
•Up to 10 dB lower EMI/RFI
compared to standard rectifier
Dimensions in mm (1 mm = 0.0394")
3
4
8
2
5
1
6
7
© 2010 IXYS All rights reserved 2 - 2
IXYS reserves the right to change limits, test conditions and dimensions. 20100709b
VUC 36
Symbol Conditions Characteristic Values
Diode Thyristor
IR, IDVR = VRRM; VD = VDRM TVJ = TVJM <5<5mA
TVJ = 25°C < 0.3 < 0.3 mA
VF, VTIF = 55 A; IT = 45 A TVJ = 25°C <1.85 < 1.4 V
VT0 For power-loss calculations only 1.2 0.85 V
rTTVJ = 125°C 16 10 mΩ
VGT VD = 6 V TVJ = 25°C < 1.5 V
IGT VD = 6 V TVJ = 25°C <80mA
VGD VD = 2/3 VDRM TVJ = TVJM < 0.2 V
IGD VD = 2/3 VDRM TVJ = TVJM <5mA
ILtG = 30 μs; IG = 0.3 A TVJ = 25°C < 300 mA
diG/dt = 0.3 A/μs
IHVD = 6 V; RGK = ∞TVJ = 25°C < 100 mA
tgd VD = ½VDRM; IG = 0.3 A TVJ = 25°C < 2.5 μs
diG/dt = 0.3 A/μs
tqIT = 15 A; tp = 300 μs; -di/dt = 10 A/μs; TVJ = 125°C typ. 130 μs
VR = 100 V; dv/dt = 20 V/μs; VD = 2/3 VDRM
trr IF = 10 A; VR = ½VRRM TVJ = 25°C < 1.5 - μs
-di/dt = 10 A/μs
RthJC per thyristor (diode); DC current 1.4 0.9 K/W
per module 0.233 - K/W
RthJH per thyristor (diode); DC current 2.0 1.1 K/W
per module 0.333 - K/W
dSCreeping distance on surface 7 mm
dACreepage distance in air 7 mm
aMax. allowable acceleration 50 m/s2
VUC 36
