MMBT2222A
Taiwan Semiconductor
1 Version:F1703
300mW, NPN Small Signal Transistor
FEATURES
● Low power loss, high efficiency
● Ideal for automated placement
● High surge current capability
● Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Switching mode power supply (SMPS)
● Adapters
● Lighting application
● On-board DC/DC converter
MECHANICAL DATA
● Case: SOT-23
● Molding compound: UL flammability classification
rating 94V-0
● Moisture sensitivity level: level 1, per J-STD-020
● Packing code with suffix "G" means green compound
(halogen-free)
● Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 1A whisker test
● Polarity: Indicated by cathode band
● Weight: 8 mg (approximately)
KEY PARAMETERS
PARAMETER
VALUE
UNIT
VCBO
75
V
VCEO
40
V
VEBO
6
V
IC
600
mA
hFE
300
Package
SOT-23
Configuration
Single Dice
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
MMBT2222A
UNIT
Marking code on the device
1P
Collector-base voltage, emitter open
VCBO
75
V
Collector-emitter voltage, base open
VCEO
40
V
Emitter-base voltage, collector open
VEBO
6
V
Collector current, dc
IC
600
mA
Total dc power input to all terminals
PT
300
mW
Junction temperature
TJ
-55 to +150
°C
Storage temperature
TSTG
-55 to +150
°C
MMBT2222A
Taiwan Semiconductor
2 Version:F1703
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
MIN
TYP
MAX
UNIT
Collector-base breakdown
voltage, emitter open
IC = 10 μA, IE = 0
V(BR)CBO
75
-
-
V
Collector-emitter breakdown
voltage, base open
IC = 10 mA, IB = 0
V(BR)CEO
40
-
-
V
Emitter-base breakdown
voltage, collector open
IE = 10 μA, IC = 0
V(BR)EBO
6
-
-
V
Collector cutoff current, emitter
open
VCB = 60 V, IE = 0
ICBO
-
-
0.01
µA
Emitter cutoff current, collector
open
VEB = 3 V, IC = 0
IEBO
-
-
0.1
µA
DC Current Gain
VCE = 10 V, IC = 500 mA
hFE
40
-
-
VCE = 10 V, IC = 150 mA
100
-
300
VCE = 10 V, IC = 10 mA
75
-
-
VCE = 10 V, IC = 1 mA
50
-
-
VCE = 10 V, IC = 0.1 mA
35
-
-
Collector-emitter saturation
voltage
IC = 500 mA, IB = 50 mA
VCE(sat)
-
-
1
V
Base-emitter saturation
voltage
IC = 500 mA, IB = 50 mA
VBE(sat)
-
-
2
V
Transition frequency
VCE = 20 V , IC = 20 mA,
f= 100MHz
fT
300
-
-
MHz
Output Capacitance
1 MHz, VCB = 10 V, IE = 0
COBO
8
pF
Input Capacitance
1 MHz, VEB = 0.5 V, IC = 0
CIBO
25
pF
Delay Time
VCC=30V, VBE(off)= -0.5V,
IC=150mA
td
-
-
10
ns
Rise Time
IB1=15mA
tr
-
-
25
ns
Storage Time
VCC=30V, IB1= -IB2=15mA,
IC=150mA
ts
-
-
225
ns
Fall Time
VCC=30V, IB1= -IB2=15mA,
IC=150mA
tf
-
-
60
ns
MMBT2222A
Taiwan Semiconductor
3 Version:F1703
ORDERING INFORMATION
PART NO.
PACKING
CODE
PACKING CODE
SUFFIX
PACKAGE
PACKING
MMBT2222A
(Note 1)
RF
G
SOT-23
3K / 7" Reel
Notes:
1. Whole series with green compound
EXAMPLE
EXAMPLE P/N
PART NO.
PACKING CODE
PACKING CODE
SUFFIX
DESCRIPTION
MMBT2222A RFG
MMBT2222A
RF
G
Green compound
MMBT2222A
Taiwan Semiconductor
4 Version:F1703
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig. 1Max Power Dissipation VS. Ambient
Temperature
Fig.2 Typical Capacitance
Fig.3 Typical DC Current Gain
VS. Collector Current
Fig.4 Gain Bandwidth Product
VS. Collector Current
0
50
100
150
200
250
300
350
400
025 50 75 100 125 150 175 200
1
10
100
0.1 1.0 10.0 100.0
Cobo
Cibo
1
10
100
1000
0.1 1 10 100 1000
TA = -25
°
C TA = +25
°
C
V
CE
=1.0V
TA = 125
°
C
1
10
100
1000
110 100
VCE= 5V
Capacitance (pF)
TA , Ambient Temperature (°C)
hFE , DC Current Gain
IC , Collector Current (mA)
fT, Gain Bandwidth Product (MHz)
IC, Collector Current (mA)
Reverse Volts (V)
PD, Power Dissipation (mW)
MMBT2222A
Taiwan Semiconductor
5 Version:F1703
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.5 Collector Emitter Saturation Voltage
VS. Collector Current
Fig.6 Base Emitter Voltage vs.
Collector Current
0
0.1
0.2
0.3
0.4
0.5
110 100 1000
IC
IB =10
TA= 25°C
TA= 150°C
T
A
= -
50°C
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1 1 10 100
VCE= 5V
TA= -50°C
TA= 25°C
TA= 150°C
VBE(ON) , Base Emitter Voltage (V)
IC , Collector Current (mA)
VCE(SAT) , Collector to Emitter
Saturation Voltage (V)
IC , Collector Current (mA)
MMBT2222A
Taiwan Semiconductor
6 Version:F1703
PACKAGE OUTLINE DIMENSION
SUGGEST PAD LAYOUT
SOT-23
DIM.
Unit(mm)
Unit(inch)
Min
Max
Min
Max
A
2.70
3.10
0.106
0.122
B
1.10
1.50
0.043
0.059
C
0.30
0.51
0.012
0.020
D
1.78
2.04
0.070
0.080
E
2.10
2.64
0.083
0.104
F
0.89
1.30
0.035
0.051
G
0.55 REF
0.022 REF
H
0.10 REF
0.004 REF
DIM.
Unit(mm)
Unit(inch)
TYP
TYP
Z
2.8
0.11
X
0.7
0.03
Y
0.9
0.04
C
1.9
0.07
E
1.0
0.04
MMBT2222A
Taiwan Semiconductor
7 Version:F1703
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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