MMBT2222A Taiwan Semiconductor 300mW, NPN Small Signal Transistor FEATURES KEY PARAMETERS Low power loss, high efficiency Ideal for automated placement High surge current capability Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 APPLICATIONS Switching mode power supply (SMPS) Adapters Lighting application On-board DC/DC converter PARAMETER VALUE UNIT VCBO 75 V VCEO 40 V VEBO 6 V IC 600 mA hFE 300 Package SOT-23 Configuration Single Dice MECHANICAL DATA Case: SOT-23 Molding compound: UL flammability classification rating 94V-0 Moisture sensitivity level: level 1, per J-STD-020 Packing code with suffix "G" means green compound (halogen-free) Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Polarity: Indicated by cathode band Weight: 8 mg (approximately) ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted) PARAMETER Marking code on the device SYMBOL MMBT2222A 1P UNIT Collector-base voltage, emitter open VCBO 75 V Collector-emitter voltage, base open VCEO 40 V Emitter-base voltage, collector open VEBO 6 V Collector current, dc IC 600 mA Total dc power input to all terminals PT 300 mW Junction temperature TJ -55 to +150 C Storage temperature TSTG -55 to +150 C 1 Version:F1703 MMBT2222A Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25C unless otherwise noted) PARAMETER Collector-base breakdown voltage, emitter open Collector-emitter breakdown voltage, base open Emitter-base breakdown voltage, collector open Collector cutoff current, emitter open Emitter cutoff current, collector open DC Current Gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency CONDITIONS SYMBOL MIN TYP MAX UNIT IC = 10 A, IE = 0 V(BR)CBO 75 - - V IC = 10 mA, IB = 0 V(BR)CEO 40 - - V IE = 10 A, IC = 0 V(BR)EBO 6 - - V VCB = 60 V, IE = 0 ICBO - - 0.01 A VEB = 3 V, IC = 0 IEBO - - 0.1 A VCE = 10 V, IC = 500 mA 40 - - VCE = 10 V, IC = 150 mA 100 - 300 75 - - VCE = 10 V, IC = 1 mA 50 - - VCE = 10 V, IC = 0.1 mA 35 - - VCE = 10 V, IC = 10 mA hFE IC = 500 mA, IB = 50 mA VCE(sat) - - 1 V IC = 500 mA, IB = 50 mA VBE(sat) - - 2 V fT 300 - - MHz VCE = 20 V , IC = 20 mA, f= 100MHz Output Capacitance 1 MHz, VCB = 10 V, IE = 0 COBO 8 pF Input Capacitance 1 MHz, VEB = 0.5 V, IC = 0 CIBO 25 pF Delay Time Rise Time Storage Time Fall Time VCC=30V, VBE(off)= -0.5V, IC=150mA IB1=15mA VCC=30V, IB1= -IB2=15mA, IC=150mA VCC=30V, IB1= -IB2=15mA, IC=150mA 2 td - - 10 ns tr - - 25 ns ts - - 225 ns tf - - 60 ns Version:F1703 MMBT2222A Taiwan Semiconductor ORDERING INFORMATION PART NO. PACKING PACKING CODE CODE SUFFIX RF G MMBT2222A (Note 1) PACKAGE PACKING SOT-23 3K / 7" Reel Notes: 1. Whole series with green compound EXAMPLE EXAMPLE P/N PART NO. PACKING CODE MMBT2222A RFG MMBT2222A RF PACKING CODE SUFFIX G 3 DESCRIPTION Green compound Version:F1703 MMBT2222A Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25C unless otherwise noted) Fig. 1Max Power Dissipation VS. Ambient Temperature Fig.2 Typical Capacitance 100 350 300 Capacitance (pF) PD, Power Dissipation (mW) 400 250 200 150 Cibo 10 Cobo 100 50 0 0 25 50 75 100 125 150 175 1 200 0.1 TA , Ambient Temperature (C) 1.0 10.0 100.0 Reverse Volts (V) Fig.3 Typical DC Current Gain Fig.4 Gain Bandwidth Product VS. Collector Current VS. Collector Current 1000 1000 VCE= 5V fT, Gain Bandwidth Product (MHz) hFE , DC Current Gain TA = 125C 100 TA = -25C TA = +25C 10 VCE =1.0V 1 100 10 1 0.1 1 10 100 1000 1 10 100 IC, Collector Current (mA) IC , Collector Current (mA) 4 Version:F1703 MMBT2222A Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25C unless otherwise noted) Fig.5 Collector Emitter Saturation Voltage VS. Collector Current Fig.6 Base Emitter Voltage vs. Collector Current IC IB 0.4 VBE(ON) , Base Emitter Voltage (V) VCE(SAT) , Collector to Emitter Saturation Voltage (V) 0.5 =10 TA= 25C 0.3 TA= 150C 0.2 TA= 50C 0.1 1.0 0.9 VCE= 5V TA= -50C 0.8 0.7 0.6 TA= 25C 0.5 0.4 TA= 150C 0.3 0 1 10 100 0.2 1000 0.1 IC , Collector Current (mA) 1 10 100 IC , Collector Current (mA) 5 Version:F1703 MMBT2222A Taiwan Semiconductor PACKAGE OUTLINE DIMENSION SOT-23 DIM. Unit(mm) Unit(inch) Min Max Min Max A 2.70 3.10 0.106 0.122 B 1.10 1.50 0.043 0.059 C 0.30 0.51 0.012 0.020 D 1.78 2.04 0.070 0.080 E 2.10 2.64 0.083 0.104 F 0.89 1.30 0.035 0.051 G 0.55 REF 0.022 REF H 0.10 REF 0.004 REF SUGGEST PAD LAYOUT Unit(mm) Unit(inch) TYP TYP Z 2.8 0.11 X 0.7 0.03 Y 0.9 0.04 C 1.9 0.07 E 1.0 0.04 DIM. 6 Version:F1703 MMBT2222A Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7 Version:F1703