MITSUBISHI HIGH VOLTAGE DIODE MODULE RM400DG-66S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM400DG-66S IF ................................................................... 400A VRRM ...................................................... 3300V High Insulated Type 2-element in a Pack AlSiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130 0.5 4-M8 NUTS 57 0.25 40.4 0.5 1 4 (K) 2 (K) 3 (A) 1 (A) 140 0.5 3 124 0.25 2 44 0.3 4 22 0.3 17 0.1 57 0.25 >PET+PBT< 6-7 MOUNTING HOLES CIRCUIT DIAGRAM 48 +1.0 0 Screwing depth min. 16.5 5 0.15 61.2 0.5 16.5 0.3 34.4 0.5 High Voltage Diode Module May 2009 1 MITSUBISHI HIGH VOLTAGE DIODE MODULE RM400DG-66S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module MAXIMUM RATINGS Symbol Item Conditions VRRM VRSM VR(DC) IF Repetitive peak reverse voltage Non-repetitive peak reverse voltage Reverse DC voltage DC forward current IFSM Surge forward current I2t Current-squared, time integration Viso Isolation voltage Ve Tj Top Tstg Partial discharge extinction voltage Junction temperature Operating temperature Storage temperature Tj = 25 C Tj = 25 C Tj = 25 C TC = 25 C Tj = 25 C start, tw = 8.3 ms Half sign wave Tj = 25 C start, tw = 8.3 ms Half sign wave Charged part to the baseplate RMS sinusoidal, 60Hz 1min. RMS sinusoidal, 60Hz, QPD 10PC -- -- -- Ratings Unit 3300 3300 2200 400 V V V A 3200 A 42.7 kA2s 10200 V 5100 -40 ~ +150 -40 ~ +125 -40 ~ +125 V C C C ELECTRICAL CHARACTERISTICS Symbol Item Conditions IRRM Repetitive reverse current VRM = VRRM VFM Forward voltage IF = 400 A trr Irr Qrr Erec Reverse recovery time VR = 1650 V, IF = 400 A Reverse recovery current di/dt = -1350 A/s Reverse recovery charge Reverse recovery energy (Note 2) Ls=100nH, Tj = 125 C (Note 1) Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C Min -- -- -- -- -- -- -- -- Limits Typ -- 1 2.80 2.70 1.0 530 270 0.3 Max 2 10 -- -- -- -- -- -- Unit mA V s A C J/P Note 1. It doesn't include the voltage drop by internal lead resistance. 2. Erec is the integral of 0.1VR x 0.1Irr x dt. High Voltage Diode Module May 2009 2 MITSUBISHI HIGH VOLTAGE DIODE MODULE RM400DG-66S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module THERMAL CHARACTERISTICS Symbol Item Conditions Rth(j-c) Thermal resistance Rth(c-f) Contact thermal resistance Junction to case (per 1/2 module) Case to Fin, grease = 1W/m*K D(c-f)=100m, (per 1/2 module) Min Limits Typ Max -- -- 54.0 K/kW -- 48.0 -- K/kW Min 7.0 3.0 -- 600 26 56 -- -- Limits Typ -- -- 1.0 -- -- -- 44 0.27 Max 15.0 6.0 -- -- -- -- -- -- Unit MECHANICAL CHARACTERISTICS Item Symbol Mt Ms m CTI Da Ds LP CE RCC'+EE' Conditions M8: Main terminals screw M6: Mounting screw Mounting torque -- -- -- -- -- Mass Comparative tracking index Clearance Creepage distance Internal inductance Internal lead resistance Tc = 25 C Unit N*m N*m kg -- mm mm nH m PERFORMANCE CURVES REVERSE RECOVERY ENERGY CHARACTERISTICS (TYPICAL) FORWARD CHARACTERISTICS (TYPICAL) 0.5 REVERSE RECOVERY ENERGY Erec (J/p) FORWARD CURRENT IF (A) 800 600 400 200 VR = 1650V, di/dt = 1350A/s Tj = 125C, LS = 100nH 0.4 0.3 0.2 0.1 Tj = 25C Tj = 125C 0 0 1 2 3 4 5 0 6 FORWARD VOLTAGE VF (V) 0 200 400 600 800 1000 FORWARD CURRENT IF (A) High Voltage Diode Module May 2009 3 MITSUBISHI HIGH VOLTAGE DIODE MODULE RM400DG-66S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 104 VR = 1650V, di/dt = 1350A/s Tj = 125C, LS = 100nH 3 2 2 101 103 7 5 Irr 3 3 2 2 100 102 trr 7 5 7 5 3 3 2 2 10-1 1 10 2 3 4 5 7 102 VR 2200V, di/dt 1800A/s Tj = 125C REVERSE RECOVERY CURRENT Irr (A) 3 7 5 1000 7 5 REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (s) 7 5 101 2 3 4 5 800 600 400 200 0 7 103 0 FORWARD CURRENT IF (A) 1000 2000 3000 4000 REVERSE VOLTAGE VR (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS Rth(j-c) = 18K/kW 1.0 n 0.8 Z th( j -c ) ( t ) = 0.6 0.4 Ri 1-exp i=1 NORMALIZED TRANSIENT THERMAL IMPEDANCE 1.2 - t ti 1 2 3 4 Ri [K/kW] 0.0059 0.0978 0.6571 0.2392 i [sec] 0.0002 0.0074 0.0732 0.4488 0.2 0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 TIME (s) High Voltage Diode Module May 2009 4