© Semiconductor Components Industries, LLC, 2007
March, 2019 Rev. 17
1Publication Order Number:
2N7002K/D
2N7002K, 2V7002K
Small Signal MOSFET
60 V, 380 mA, Single, NChannel, SOT23
Features
ESD Protected
Low RDS(on)
Surface Mount Package
2V Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
Low Side Load Switch
Level Shift Circuits
DCDC Converter
Portable Applications i.e. DSC, PDA, Cell Phone, etc.
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Rating Symbol Value Unit
DraintoSource Voltage VDSS 60 V
GatetoSource Voltage VGS ±20 V
Drain Current (Note 1)
Steady State 1 sq in Pad TA = 25°C
TA = 85°C
ID380
270
mA
Drain Current (Note 2)
Steady State Minimum Pad TA = 25°C
TA = 85°C
ID320
230
mA
Power Dissipation
Steady State 1 sq in Pad
Steady State Minimum Pad
PD420
300
mW
Pulsed Drain Current (tp = 10 ms) IDM 5.0 A
Operating Junction and Storage
Temperature Range
TJ, TSTG 55 to
+150
°C
Source Current (Body Diode) IS300 mA
Lead Temperature for Soldering Purposes
(1/8 from case for 10 s)
TL260 °C
GateSource ESD Rating
(HBM, Method 3015)
ESD 2000 V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surfacemounted on FR4 board using 1 sq in pad size with 1 oz Cu.
2. Surfacemounted on FR4 board using 0.08 sq in pad size with 1 oz Cu.
Device Package Shipping
ORDERING INFORMATION
2N7002KT1G,
2V7002KT1G
3000 / Tape & Reel
SIMPLIFIED SCHEMATIC
SOT23
CASE 318
STYLE 21
704 MG
G
MARKING DIAGRAM
& PIN ASSIGNMENT
3
21
Drain
Gate
2
1
3
Source
SOT23
(PbFree)
60 V 1.6 W @ 10 V
RDS(on) MAX
380 mA
ID MAXV(BR)DSS
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
2.5 W @ 4.5 V
Gate
Source
Drain
3
2
1
(Top View)
704 = Specific Device Code*
M = Date Code*
G= PbFree Package
2N7002KT7G 3500 / Tape & ReelSOT23
(PbFree)
*Specific Device Code, Date Code or overbar
orientation and/or location may vary depend-
ing upon manufacturing location. This is a
representation only and actual devices may
not match this drawing exactly.
(Note: Microdot may be in either location)
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2N7002K, 2V7002K
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2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
JunctiontoAmbient Steady State (Note 3) RqJA 300 °C/W
JunctiontoAmbient t 5 s (Note 3) 92
JunctiontoAmbient Steady State (Note 4) 417
JunctiontoAmbient t 5 s (Note 4) 154
3. Surfacemounted on FR4 board using 1 sq in pad size with 1 oz Cu.
4. Surfacemounted on FR4 board using 0.08 sq in pad size with 1 oz Cu.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA60 V
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ71 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = 60 V
TJ = 25°C 1 mA
TJ = 125°C 10
VGS = 0 V,
VDS = 50 V
TJ = 25°C 100 nA
GatetoSource Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±10 mA
VDS = 0 V, VGS = ±10 V 450 nA
VDS = 0 V, VGS = ±5.0 V 150 nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA1.0 2.3 V
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ4.0 mV/°C
DraintoSource On Resistance RDS(on) VGS = 10 V, ID = 500 mA 1.19 1.6 W
VGS = 4.5 V, ID = 200 mA 1.33 2.5
Forward Transconductance gFS VDS = 5 V, ID = 200 mA 530 mS
CHARGES AND CAPACITANCES
Input Capacitance CISS
VGS = 0 V, f = 1 MHz,
VDS = 20 V
24.5 45 pF
Output Capacitance COSS 4.2 8.0
Reverse Transfer Capacitance CRSS 2.2 5.0
Total Gate Charge QG(TOT)
VGS = 4.5 V, VDS = 10 V;
ID = 200 mA
0.7 nC
Threshold Gate Charge QG(TH) 0.1
GatetoSource Charge QGS 0.3
GatetoDrain Charge QGD 0.1
SWITCHING CHARACTERISTICS, VGS = V (Note 6)
TurnOn Delay Time td(ON)
VGS = 10 V, VDD = 25 V,
ID = 500 mA, RG = 25 W
12.2 ns
Rise Time tr9.0
TurnOff Delay Time td(OFF) 55.8
Fall Time tf29
DRAINSOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V,
IS = 200 mA
TJ = 25°C 0.8 1.2 V
TJ = 85°C 0.7
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width 300 ms, duty cycle 2%
6. Switching characteristics are independent of operating junction temperatures
2N7002K, 2V7002K
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3
TYPICAL CHARACTERISTICS
5.0 V
Figure 1. OnRegion Characteristics Figure 2. Transfer Characteristics
VDS, DRAINTOSOURCE VOLTAGE (V) VGS, GATETOSOURCE VOLTAGE (V)
6420
0
0.4
0.8
1.2
1.6
6420
0
0.4
0.8
1.2
Figure 3. OnResistance vs. Drain Current and
Temperature
Figure 4. OnResistance vs. Drain Current and
Temperature
ID, DRAIN CURRENT (A)
1.21.00.80.60.40.20
0
0.4
0.8
1.2
1.6
2.0
3.2
Figure 5. OnResistance vs. GatetoSource
Voltage
Figure 6. OnResistance Variation with
Temperature
VGS, GATETOSOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C)
108642
0.4
0.8
1.6
2.4
12510075502502550
0.6
1.0
1.4
1.8
2.2
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
RDS(on), DRAINTOSOURCE RESISTANCE (W)RDS(on), DRAINTOSOURCE RESISTANCE (W)
RDS(on), DRAINTOSOURCE
RESISTANCE (NORMALIZED)
VGS = 10 V
7.0 V
8.0 V
9.0 V 4.5 V
4.0 V
6.0 V
3.5 V
3.0 V
2.5 V
TJ = 55°C
TJ = 125°C
TJ = 25°C
TJ = 55°C
TJ = 125°C
TJ = 25°C
TJ = 85°C
VGS = 4.5 V
ID, DRAIN CURRENT (A)
1.21.00.80.60.40.20
0
0.8
1.6
2.4
3.2
RDS(on), DRAINTOSOURCE RESISTANCE (W)
TJ = 55°C
TJ = 125°C
TJ = 25°C
TJ = 85°C
VGS = 10 V
ID = 500 mA
ID = 200 mA
150
ID = 0.2 A
VGS = 4.5 V
VGS = 10 V
1.2
2.0
2.4
2.8
0.4
1.2
2.0
2.8
2N7002K, 2V7002K
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4
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation Figure 8. GatetoSource and
DraintoSource Voltage vs. Total Charge
Qg, TOTAL GATE CHARGE (nC)
0.80.60.40.20
0
1
2
3
4
5
Figure 9. Diode Forward Voltage vs. Current
VSD, SOURCETODRAIN VOLTAGE (V)
1.21.00.80.60.4
0.01
1
10
VGS, GATETOSOURCE VOLTAGE (V)
IS, SOURCE CURRENT (A)
TJ = 25°C
ID = 0.2 A
201612840
0
10
20
30
C, CAPACITANCE (pF)
Ciss
Coss
Crss
TJ = 25°C
VGS = 0 V
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (V)
TJ = 25°CTJ = 85°C
VGS = 0 V
0.1
Figure 10. Threshold Voltage with
Temperature
TJ, JUNCTION TEMPERATURE (°C)
12510075502502550
1.0
1.4
1.8
2.2
VGS(TH), THRESHOLD VOLTAGE (V)
15
0
ID = 250 mA
1.2
1.6
2.0
2.4
1.3
1.7
2.1
2.5
1.1
1.5
1.9
2.3
2N7002K, 2V7002K
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5
TYPICAL CHARACTERISTICS
0.1
1
10
100
0.000001 0.00001 0.0001 0.001 0.01 0.1 100
0
Figure 11. Thermal Response 1 sq in pad
t, PULSE TIME (s)
RqJA(t) (°C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
0.02
0.2
0.01
0.05
Duty Cycle = 0.5
SINGLE PULSE
0.1
1 10 100
1000
0.1
1
10
100
0.000001 0.00001 0.0001 0.001 0.01 0.1 100
0
Figure 12. Thermal Response minimum pad
t, PULSE TIME (s)
RqJA(t) (°C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
0.02
0.2
0.01
0.05
Duty Cycle = 0.5
SINGLE PULSE
0.1
1 10 100
1000
2N7002K, 2V7002K
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6
PACKAGE DIMENSIONS
SOT23 (TO236)
CASE 31808
ISSUE AS
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c
0−−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW
END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
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