SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 2 SEPTEMBER 95 COMPLIMENTARY TYPE BSS64 PARTMARKING DETAIL BSS63 - T3 BSS63R - T6 BSS63 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -110 V Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO -6 V Continuous Collector Current IC -100 mA Power Dissipation at Tamb=25C PTOT 330 mW Operating and Storage Temperature Range t j:tstg -55 to +150 C ELECTRICAL CHARACTERISTICS (at Tamb = 25C). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR) -110 V IC=-10 A Collector-Emitter Breakdown Voltage V(BR)CEO -100 V IC=-100 A* Emitter-Base Breakdown Voltage V(BR)EBO -6 V IE=-10 A Collector Cut-Off Current IEBO -100 -50 A nA VCB=-90V, VCB=-90V,Tamb=150oC Emitter Cut-Off Current IEBO -200 nA VEB=-6V Collector-Emitter Saturation Voltage VCE(sat) -250 mV IC=-25mA, IB=-2.5mA Base-Emitter Saturation Voltage VBE(sat) -900 mV IC=-25mA, IB=-2.5mA Static Forward Current Transition Frequency Output Capacitance hFE 30 30 fT 50 Cobo MAX. UNIT CONDITIONS. IC=-10mA, VCE=-1V IC=25mA, VCE=1V Typ 85 MHz VCE=-5V, IC=25mA f=35 MHz Typ. 3 pF VCB=-10V, f=1MHz * Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% PAGE NUMBER