Spec.No.IGBT-SP-06020R1 P1 IGBT MODULE MBN1800E17E Silicon N-channel IGBT 1. FEATURES Low noise, low loss IGBT module due to soft-LiPT Trench Technology Low noise due to ultra soft fast recovery diode. (U-SFD) High reverse recovery capability (HiRC) High thermal fatigue durability. (Tc=70K, N>30,000cycles) o 2. ABSOLUTE MAXIMUM RATINGS (Tc=25 C ) Item Collector Emitter Voltage Gate Emitter Voltage DC 1ms DC 1ms Collector Current Forward Current Total Power dissipation Junction Temperature Storage Temperature Isolation Voltage Screw Torque Terminals Mounting Notes: (M4) (M8) (M6) +0.1 Symbol Unit MBN1800E17E VCES VGES IC ICp IF IFM Ptot Tj Tstg VISO - V V 1,700 20 1,800 3,600 1,800 3,600 8.3 -40 ~ +125 -40 ~ +125 4,000 (AC 1 minute) (1) 2 (1) 15 (2) 5 A A kW o C o C VRMS N*m +0 -3N*m (1) Recommended Value 2.0 -0.2 / 15 (2) Recommended Value 5.01N*m * Please contact our representatives at order. * For improvement, specifications are subject to change without notice. * For actual application, please confirm this spec sheet is the newest revision. http://store.iiic.cc/ Spec.No.IGBT-SP-06020R1 P2 IGBT MODULE MBN1800E17E 3. ELECTRIC CHARACTERISTICS Item Symbol Unit Collector Emitter Cut-Off Current I CES mA Gate Emitter Leakage Current IGES nA Collector Emitter Saturation Voltage VCE(sat) V Gate Emitter Threshold Voltage Input Capacitance Reverse transfer Capacitance Output Capacitance Total Gate Charge VGE(TO) Cies Cres Coes QG V nF nF nF C Turn-on Gate Charge QG(on) C Internal Gate Resistance (Tentative) Rge(int) Turn on delay Time td(on) Rise Time tr Turn On Time ton Switching Times Turn off delay Time td(off) Fall Time tf Turn Off Time toff Peak Forward Voltage Drop Reverse Recovery Time Turn On Loss Turn Off Loss Reverse Recovery Loss Reverse Recovery Peak Current RBSOA Recovery SOA 2 I t value Partial Discharge Extinction Voltage Notes : s VFM V trr Eon(10%) Eon(Full) Eoff(10%) Eoff(Full) Err(10%) Err(Full) IRRM Ic IF 2 It VPDoff s J/P J/P J/P J/P J/P J/P A A A 2 kA s VRMS Min. Typ. Max. -500 1.7 5.0 0.9 0.5 0.5 1.0 0.6 0.3 1.0 1.4 0.2 3600 3600 1.3 Test Conditions o 10 VCE=1,700V, VGE=0V, Tj=25 C o 15 50 VCE=1,700V, VGE=0V, Tj=125 C o +500 VGE=20V, VCE=0V, Tj=25 C o 2.0 IC=1,800A, VGE=15V, Tj=25 C o 2.2 2.8 IC=1,800A, VGE=15V, Tj=125 C o 6.5 8.0 VCE=10V, IC=180mA, Tj=25 C 150 VCE=10V, VGE=0V 9 o f=100kHz, Tj=25 C 17 11 VGE=15V, Vcc=900V, Ic=1,800A 5.0 VGE=-15V 0V, Vcc=900V, Ic=1,800A 6.5 VGE=-15V 8V, Vcc=900V, Ic=1,800A o 1.4 2.1 VCE=10V, VGE=0V, f=100kHz, Tj=25 C 1.1 2.2 1.1 2.2 VCC=900V, Ic=1,800A 2.2 4.4 L=100nH 1.3 2.6 RG(on/off)=6.8/2.7 (3) 0.9 1.8 o VGE=15V, Tj=125 C 2.2 4.4 o 1.8 IF=1,800A, VGE=0V, Tj=25 C o 1.9 2.5 IF=1,800A, VGE=0V, Tj=125 C 0.7 1.4 0.45 0.68 0.6 (0.9) VCC=900V, Ic=1,800A 1.0 1.5 L=100nH 1.1 (1.65) RG(on/off)=6.8/2.7 (3) 0.6 0.9 o VGE=15V, Tj=125 C 0.75 (1.15) 1500 (3) VCC=1100V,L=100nH,RG(on/off)=6.8/2.7 o VGE=15V, Tj=125 C o 1000 Tj,start=125 C, 10ms, VR=0V Q=10pC, 50Hz, (3) RG value is the test condition's value for evaluation of the switching times, not recommended value. Please, determine the suitable RG value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted. 4. THERMAL CHARACTERISTICS Item Thermal Resistance Symbol Unit IGBT FWD Contact Thermal Impedance Min. Rth(j-c) Rth(j-c) K/W - Rth(c-f) K/W - Typ. Max. - Test Conditions 0.012 Junction to case 0.015 Case to fin. Thermal grease applied. 0.006 Thickness 100m, Thermal conductivity of grease: 1W/mK http://store.iiic.cc/ Spec.No.IGBT-SP-06020R1 P3 IGBT MODULE MBN1800E17E 5. MODULE MECHNICAL CHARACTERISTICS Item Weight Creeping Distance Clearance Distance Stray inductance in module Terminal Resistance Comparative Tracking Index Module base plate Material Baseplate Thickness Insulation Material Terminal Surface treatment Case Material Fire and Smoke Category Between terminal Terminal-Base Between terminal Terminal-Base LS(CM-EM) LS(ES-EM) LS(CM-CS) RTerminal (CTI) Unit Characteristics g mm mm mm mm 1300 49 33 22 25 12 3.8 6.4 0.09 600 Al-SiC 5 Al N Ni plating nH m mm Conditions Collector-main to Emitter-main Emitter-sense to Emitter-main Collector-main to Collector sense Collector-main to Emitter-main Poly-Phenilene Sulfide I2 / F3 6. CIRCUIT DIAGRAM http://store.iiic.cc/ NFF 16-102 Spec.No.IGBT-SP-06020R1 P4 IGBT MODULE MBN1800E17E 7. CHARACTERISTICS CURVE 7.1 STATIC CHARACTERISTICS TYPICAL 2000 Tc=25 1800 2000 Tc=125 11V 1800 1600 1600 1400 1400 Collector Current IC (A) Collector Current IC (A) TYPICAL VGE=15V 13V 1200 1000 800 11V 1200 1000 600 800 600 400 9V 400 9V 200 200 7V 0 0 1 2 3 4 5 0 Tc=125 1800 1600 1400 1200 1000 800 600 400 200 0 0.0 0.5 1.0 1.5 2.0 2.5 2 3 4 5 Collector Current vs. Collector to Emitter Voltage TYPICAL Tc=25 1 Collector-Emitter Voltage VCE (V) Collector Current vs. Collector to Emitter Voltage 2000 7V 0 Collector-Emitter Voltage VCE (V) Forward Current IF (A) VGE=15V 13V 3.0 Forward Voltage VF (V) Forward Voltage of free-wheeling diode http://store.iiic.cc/ Spec.No.IGBT-SP-06020R1 P5 IGBT MODULE MBN1800E17E TYPICAL TYPICAL 20 1000 f=100kHz,Tc=25 15 Cies 10 Cies, Coes, Cres (nF) VGE (V) 100 5 0 Coes 10 -5 Cres -10 -15 1 -10 -5 0 QG (uC) 5 10 0.1 1 10 VCE (V) Cies, Coes, Cres vs. Vce QG-VGE curve http://store.iiic.cc/ 100 Spec.No.IGBT-SP-06020R1 P6 IGBT MODULE MBN1800E17E 7.2 DYNAMIC CHARACTERISTICS 7.2.1 CIRCUIT Ls=100nH LLOAD Ic Vce Ls= VL Vcc Rg(on/off)=6.8/2.7 t 0 VL dIc d t=tL ( ) tL Definition of Ls 7.2.2 WAVEFORM DEFINITION Ic Ic Vce 90% Vce Vce 0.1Vce 90% Irm 0 0 Vge 10% t1 10% 10% 10% tr ton t3 t4 t t t2 0 0 10% IcVce dt 90% t5 t7 t1 t8 trr IF -Ic t6 t9 t8 Eoff(10%)= IcVce dt Err(10%)= IcVce dt t5 Definition of switching loss http://store.iiic.cc/ t12 t10 IFVce dt t11 t6 Eoff(Full)= t11 t12 t7 t2 IcVce dt t tf toff t3 Eon(Full)= t t Vge t4 Eon(10%)= 0.5Irm 0.1IF 0 t10 Err(Full)= IFVce dt t9 Spec.No.IGBT-SP-06020R1 P7 IGBT MODULE MBN1800E17E 7.2.3 DEPENDENCE OF CURRENT TYPICAL TYPICAL 1 1.5 Conditions Conditions Conditions Conditions Tc=125 Tc=125 Vcc=900V Vcc=900V L=100nH L=100nH RG(on/off)=6.8/2.7 RG(on/off)=6.8/2.7 VG=15V VG=15V Inductive Load Inductive Load Turn-off Loss Eoff (J/pulse) Eon (J/pulse) Eoff(Full) Eon(Full) Turn-on Loss 0.5 Eon(10%) 1 Eoff(10%) 0.5 0 0 0 500 1000 Collector Current 1500 0 2000 Ic (A) 500 1000 1500 Collector Current Turn-on Loss vs. Collector Current Turn-off Loss vs. Collector Current TYPICAL TYPICAL 1 3 Conditions Conditions Conditions Conditions Tc=125 Tc=125 Vcc=900V Vcc=900V L=100nH L=100nH RG(on/off)=6.8/2.7 RG(on/off)=6.8/2.7 VG=15V 2.5 Inductive Load Err(Full) Err(10%) 0.5 Switching Time Ton,tr,Toff,tf,Trr (s) VG=15V Reverse Recovery Loss Err (J/pulse) 2000 Ic (A) Inductive Load Toff 2 Ton 1.5 tr 1 tf Trr 0.5 0 0 0 500 1000 Forward Current 1500 2000 0 500 1000 Collector Current IF (A) Reverse Recovery Loss vs. Forward Current http://store.iiic.cc/ 1500 Ic (A) Switching Time vs. Collector Current 2000 Spec.No.IGBT-SP-06020R1 P8 IGBT MODULE MBN1800E17E 7.2.4 DEPENDENCE OF RG TYPICAL TYPICAL 1.5 2 Conditions Conditions Conditions Conditions Tc=125 Tc=125 Vcc=900V Vcc=900V Ic=1800A Ic=1800A L=100nH L=100nH VG=15V VG=15V Inductive Load Inductive Loa d Eon(Full) Turn-off Loss Eoff (J/pulse) Turn-on Loss Eon (J/pulse) 1.5 1 0.5 Eon(10%) Eoff(Full) 1 Eoff(10%) 0.5 0 0 0 2 4 6 8 10 Gate Resistance Rg ( ) 12 14 TYPICAL Conditions Conditions Tc=125 Vcc=900V IF=1800A L=100nH VG=15V Reverse Recovery Loss Err (J/pulse) Inductive Load 1 Err(Full) Err(10%) 0.5 0 4 6 8 Gate Resistance 10 4 6 8 Rg () Turn-off Loss vs. Gate Resistance 1.5 2 2 Gate Resistance Turn-on Loss vs. Gate Resistance 0 0 12 14 Rg () Reverse Recovery Loss vs. Gate Resistance http://store.iiic.cc/ 10 Spec.No.IGBT-SP-06020R1 P9 IGBT MODULE MBN1800E17E 8. PACKAGE OUTLINE DRAWING http://store.iiic.cc/ Spec.No.IGBT-SP-06020R1 P10 IGBT MODULE MBN1800E17E 9. Thermal Impedance 9.1 TRANSIENT THERMAL IMPEDANCE Transient thermal impedance Zth(j-c)(K/W) 0.1 Diode IGBT 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Time t(s) Transient Thermal Impedance Curve (Maximum Value) 10. Negative environmental impact material Please note the following materials are contained in the product in order to keep characteristic and reliability level. Material Contained part Lead (Pb) and its compounds Solder Arsenic and its compounds Si chip http://store.iiic.cc/ HITACHI POWER SEMICONDUCTORS Notices 1. The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact Hitachi sales department for the latest version of this data sheets. 2. 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