LESHAN RADIO COMPANY, LTD. Power MOSFET 200 mAmps, 50 Volts LBSS138LT1 N-Channel SOT-23 3 Typical applications are dc-dc converters, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. * 1 Low Threshold Voltage (V GS(th): 0.5V...1.5V) makes it ideal for low voltage applications 2 * Miniature SOT-23 Surface Mount Package saves board space * Pb-Free Package May be Available. The G-Suffix Denotes a SOT- 23 (TO-236AB) Pb-Free Lead Finish 200 mAMPS 50 VOLTS R DS(on) = 3.5 N - Channel 3 MAXIMUM RATINGS (TA = 25 o C unless otherwise noted) Rating Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Drain Current - Continuous @ TA = 25C - Pulsed Drain Current (tp 10 s) Symbol Value Unit VDSS 50 Vdc VGS 20 Vdc 1 mA ID IDM 200 800 2 Total Power Dissipation @ TA = 25C PD 225 mW Operating and Storage Temperature Range TJ, Tstg - 55 to 150 C MARKING DIAGRAM & PIN ASSIGNMENT RJA 556 C/W Drain TL 260 C Thermal Resistance - Junction-to-Ambient Maximum Lead Temperature for Soldering Purposes, for 10 seconds 3 J1 W 1 Gate 2 Source J1 = Device Code W = Work Week ORDERING INFORMATION Device Package Shipping LBSS138LT1 SOT-23 3000 Tape & Reel LBSS138LT1G SOT-23 3000 Tape & Reel LBSS138LT1-1/5 LESHAN RADIO COMPANY, LTD. LBSS138LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 50 - - Vdc - - - - 0.1 0.5 OFF CHARACTERISTICS V(BR)DSS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 Adc) Adc Zero Gate Voltage Drain Current (VDS = 25 Vdc, VGS = 0 Vdc) (VDS = 50 Vdc, VGS = 0 Vdc) IDSS Gate-Source Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) IGSS - - 0.1 Adc Gate-Source Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) VGS(th) 0.5 - 1.5 Vdc Static Drain-to-Source On-Resistance (VGS = 2.75 Vdc, ID < 200 mAdc, TA = -40C to +85C) (VGS = 5.0 Vdc, ID = 200 mAdc) rDS(on) - - 5.6 - 10 3.5 gfs 100 - - mmhos pF ON CHARACTERISTICS (Note 1.) Forward Transconductance (VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz) Ohms DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1 MHz) Ciss - 40 50 Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1 MHz) Coss - 12 25 Transfer Capacitance (VDG = 25 Vdc, VGS = 0, f = 1 MHz) Crss - 3.5 5.0 td(on) - - 20 td(off) - - 20 SWITCHING CHARACTERISTICS (Note 2.) Turn-On Delay Time Turn-Off Delay Time (VDD = 30 Vdc, ID = 0.2 Adc,) ns 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 2. Switching characteristics are independent of operating junction temperature. LBSS138LT1-2/5 LESHAN RADIO COMPANY, LTD. LBSS138LT1 TYPICAL ELECTRICAL CHARACTERISTICS 0.7 0.9 VGS = 3.5 V TJ = 25C VGS = 3.25 V 0.6 VGS = 3.0 V 0.5 VGS = 2.75 V 0.4 VGS = 2.5 V 0.3 0.2 0.1 0 VDS = 10 V 0.8 I D , DRAIN CURRENT (AMPS) I D , DRAIN CURRENT (AMPS) 0.8 -55C 0.7 150C 0.6 0.5 0.4 0.3 0.2 0.1 0 1 2 3 4 5 6 7 8 9 0 10 0 0.5 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 2. Transfer Characteristics Figure 1. On-Region Characteristics 2.2 1.25 ID = 1.0 mA 2 1.8 Vgs(th) , VARIANCE (VOLTS) VGS = 10 V ID = 0.8 A 1.6 VGS = 4.5 V ID = 0.5 A 1.4 1.2 1 1.125 1 0.875 0.8 0.6 -55 -5 45 95 0.75 -55 145 -30 -5 20 45 70 95 120 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 3. On-Resistance Variation with Temperature Figure 4. Threshold Voltage Variation with Temperature VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 25C 10 145 VDS = 40 V TJ = 25C 8 6 4 ID = 200 mA 2 0 0 500 1000 1500 2000 2500 3000 QT, TOTAL GATE CHARGE (pC) Figure 5. Gate Charge LBSS138LT1-3/5 LESHAN RADIO COMPANY, LTD. LBSS138LT1 10 VGS = 2.5 V 9 8 150C 7 6 5 25C 4 -55C 3 2 1 0.05 0 0.15 0.1 0.25 0.2 ID, DRAIN CURRENT (AMPS) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) TYPICAL ELECTRICAL CHARACTERISTICS 8 5 4 4.5 4 3.5 3 25C 2.5 2 -55C 1.5 1 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) 150C 5 25C 3 2 1 -55C 0.05 0 0.25 0.2 4.5 VGS = 10 V 4 150C 3.5 3 2.5 25C 2 -55C 1.5 1 0 0.05 0.1 ID, DRAIN CURRENT (AMPS) 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 ID, DRAIN CURRENT (AMPS) Figure 9. On-Resistance versus Drain Current Figure 8. On-Resistance versus Drain Current 1 I D , DIODE CURRENT (AMPS) 0.15 0.1 ID, DRAIN CURRENT (AMPS) Figure 7. On-Resistance versus Drain Current VGS = 4.5 V 5.5 150C 6 Figure 6. On-Resistance versus Drain Current 6 VGS = 2.75 V 7 120 100 TJ = 150C 0.1 25C -55C 80 60 0.01 Ciss 40 Coss 20 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 0 Crss 0 5 10 15 20 25 VSD, DIODE FORWARD VOLTAGE (VOLTS) Figure 10. Body Diode Forward Voltage Figure 11. Capacitance LBSS138LT1-4/5 LESHAN RADIO COMPANY, LTD. LBSS138LT1 SOT-23 NOTES: A 1. DIMENSIONING AND TOLERANCING PER ANSI L Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3 1 V 2 B S DIM G A B C D G H J K L S V C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm LBSS138LT1-5/5