ON Semiconductor BC846AWT1 Series, BC847AWT1 Series, BC848AWT1 Series General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-70 which is designed for low power surface mount applications. MAXIMUM RATINGS Rating Symbol BC846 BC847 BC848 Unit Collector-Emitter Voltage VCEO 65 45 30 V Collector-Base Voltage VCBO 80 50 30 V Emitter-Base Voltage VEBO 6.0 6.0 5.0 V IC 100 100 100 mAdc Collector Current -- Continuous 3 1 2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board, (1) TA = 25C PD 150 mW Thermal Resistance, Junction to Ambient RJA 833 C/W PD 2.4 mW/C TJ, Tstg -55 to +150 C Total Device Dissipation Junction and Storage Temperature CASE 419-02, STYLE 3 SOT-323/SC-70 COLLECTOR 3 1 BASE DEVICE MARKING BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E; BC847BWT1 = 1F; BC847CWT1 = 1G; BC848AWT1 = 1J; BC848BWT1 = 1K; BC848CWT1 = 1L 2 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 10 mA) BC846 Series BC847 Series BC848 Series V(BR)CEO 65 45 30 -- -- -- -- -- -- V Collector-Emitter Breakdown Voltage (IC = 10 A, VEB = 0) BC846 Series BC847 Series BC848 Series V(BR)CES 80 50 30 -- -- -- -- -- -- V Collector-Base Breakdown Voltage (IC = 10 A) BC846 Series BC847 Series BC848 Series V(BR)CBO 80 50 30 -- -- -- -- -- -- V Emitter-Base Breakdown Voltage (IE = 1.0 A) BC846 Series BC847 Series BC848 Series V(BR)EBO 6.0 6.0 5.0 -- -- -- -- -- -- V ICBO -- -- -- -- 15 5.0 nA A Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150C) 1. FR-5 = 1.0 x 0.75 x 0.062 in Semiconductor Components Industries, LLC, 2001 September, 2001 - Rev. 2 279 Publication Order Number: BC846AWT1/D BC846AWT1 Series, BC847AWT1 Series, BC848AWT1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit hFE -- -- -- 90 150 270 -- -- -- -- 110 200 420 180 290 520 220 450 800 ON CHARACTERISTICS DC Current Gain (IC = 10 A, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector-Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VCE(sat) -- -- -- -- 0.25 0.6 V Base-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base-Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VBE(sat) -- -- 0.7 0.9 -- -- V Base-Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base-Emitter Voltage (IC = 10 mA, VCE = 5.0 V) VBE(on) 580 -- 660 -- 700 770 mV fT 100 -- -- MHz Cobo -- -- 4.5 pF NF -- -- 10 dB SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) Figure 13. http://onsemi.com 280 BC846AWT1 Series, BC847AWT1 Series, BC848AWT1 Series BC847 SERIES & BC848 SERIES 1.0 VCE = 10 V TA = 25C 1.5 TA = 25C 0.9 0.8 1.0 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 0.8 0.6 0.4 VBE(sat) @ IC/IB = 10 0.7 VBE(on) @ VCE = 10 V 0.6 0.5 0.4 0.3 0.2 0.3 VCE(sat) @ IC/IB = 10 0.1 0.2 0.2 0.5 50 1.0 20 2.0 5.0 10 IC, COLLECTOR CURRENT (mAdc) 100 0 0.1 200 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) Figure 2. "Saturation" and "On" Voltages 2.0 VB, TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOR-EMITTER VOLTAGE (V) Figure 1. Normalized DC Current Gain TA = 25C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA 0.8 IC = 50 mA IC = 100 mA 0.4 0 0.02 10 0.1 1.0 IB, BASE CURRENT (mA) 20 1.0 -55C to +125C 1.2 1.6 2.0 2.4 2.8 Cib Cob 2.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 40 f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) C, CAPACITANCE (pF) TA = 25C 3.0 1.0 100 Figure 4. Base-Emitter Temperature Coefficient 10 5.0 10 1.0 IC, COLLECTOR CURRENT (mA) 0.2 Figure 3. Collector Saturation Region 7.0 50 70 100 Figure 5. Capacitances 400 300 200 VCE = 10 V TA = 25C 100 80 60 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 Figure 6. Current-Gain - Bandwidth Product http://onsemi.com 281 50 BC846AWT1 Series, BC847AWT1 Series, BC848AWT1 Series BC846 SERIES TA = 25C VCE = 5 V TA = 25C 0.8 V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) 1.0 2.0 1.0 0.5 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4 0.2 0.2 VCE(sat) @ IC/IB = 10 0 10 100 1.0 IC, COLLECTOR CURRENT (mA) 0.1 0.2 0.2 0.5 1.0 2.0 TA = 25C 1.6 20 mA 50 mA 100 mA 200 mA 1.2 IC = 10 mA 0.8 0.4 0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 20 f, T CURRENT-GAIN - BANDWIDTH PRODUCT C, CAPACITANCE (pF) TA = 25C Cib 10 6.0 2.0 Cob 0.1 0.2 0.5 5.0 1.0 2.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 200 50 100 200 -1.4 -1.8 50 VB for VBE -55C to 125C -2.2 -2.6 -3.0 0.2 0.5 10 20 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) Figure 10. Base-Emitter Temperature Coefficient 40 4.0 100 -1.0 Figure 9. Collector Saturation Region 20 50 Figure 8. "On" Voltage VB, TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. DC Current Gain 10 20 2.0 5.0 IC, COLLECTOR CURRENT (mA) VCE = 5 V TA = 25C 500 200 100 50 20 1.0 5.0 10 50 100 IC, COLLECTOR CURRENT (mA) 100 Figure 11. Capacitance Figure 12. Current-Gain - Bandwidth Product http://onsemi.com 282