SIEMENS Silicon Schottky Diode @ Generai-purpose diodes for high-speed switching @ Circuit protection e@ Voltage clamping @ High-level detection and mixing BAS 70W VSO05561 Type Ordering Code Pin Configuration |Marking | Package") (tape and reel) 1 2 3 BAS 70-04W | Q62702-A1068 Al C2 Ci/A2 | 74s SOT-323 BAS 70-05W | Q62702-A1069 Al A2 C1/C2 | 75s BAS 70-06W | Q62702-A1070 Ci C2 A1/A2 | 76s Maximum Ratings Parameter Symbol Values Unit Reverse voltage Va 70 Vv Forward current Ie 70 mA Surge forward current, tf < 10 ms Tegn 100 mA Total power dissipation T, < 91 C Pro 250 mW Operating temperature range Top ~ 55... + 150 C Storage temperature range Tg ~55...+ 150 C Thermal Resistance Junction-ambient Riga < 455 KAW Junction-soldering point Russ < 235 KAW 4) Package mounted on an epoxy pcb 40 mm x 40 mm x 1.5 mm/1cm? Cu. Semiconductor Group 226 10.94 SIEMENS BAS 70W Electrical Characteristics at T, = 25 C, unless otherwise specified. Parameter Symbol Value Unit min. typ. | max. Dc Characteristics Breakdown voltage Iga) = 10 pA Vier) 70 Forward voltage I. = 1 mA Jp=10mA I: = 15 mA Ve 300 600 750 375 410 705 750 880 1000 mV Reverse current Va = 50 Vv Va = 70 Vv Diode capacitance Va =O0V, f= 1 MHz C; 1.5 2 pF Charge carrier life time i, =25mA - 100 ps Differential forward resistance I= 10mMA, f= 10 kHz rs 34 - Series inductance nH Semiconductor Group 227 SIEMENS BAS 70W Forward current /; =f (V-) Reverse current /, =f (V,) 102 BAS 170W EHRO0042 102 BAS 170W EHBOOO43 , I, UA Th=150C 10! 10! 10 10 1077 107 107? 2 -3 O00 0.5 10 Vv 15 100 20 40 60 V 80 - ve ie Vp Diode capacitance C, =f (V,) 17 EHBO0044 2.0 BAS ow c, PF [ss 0.5 0.0 0 20 40 60 V 8&0 Ve Semiconductor Group Differential forward resistance R, = f (/,) 10 3 BAS 170W EH800045 r, 9 107 10! 10 of 1 10 mA 100 - |; 228 SIEMENS BAS 70W Permissible Pulse load /, = f (T,; Ts") * Package mounted on epoxy 100 BAS 70W EHD07161 I, mA ts 60 N . \ 20 0 50 100 C 150 es Ty Permissible Pulse load Jemax / [roc =f (ty) 102 BAS 70W EHDO7163 fj Fmox Troe s HR i nh Wii , Ut LTA : ii ca LF cit HW CCT 107 4075 1074 1073 102 5 10 _ th 0 Semiconductor Group Permissible load Ryjs = f (f,) 5 BAS 70W H007162 Th CL RT CT Ue ae i ; i Hl sa 10 1075 4075 jo-4 40-3 107? os 10 ~ fp 229