© 2012 IXYS CORPORATION, All Rights Reserved DS100310A(01/12)
IXFT50N60P3
IXFQ50N60P3
IXFH50N60P3
Polar3TM HiperFETTM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 600 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ600 V
VGSS Continuous ± 30 V
VGSM Transient ± 40 V
ID25 TC= 25°C 50 A
IDM TC= 25°C, Pulse Width Limited by TJM 125 A
IATC= 25°C25 A
EAS TC= 25°C1 J
dv/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 35 V/ns
PDTC= 25°C 1040 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062in.) from Case for 10s 300 °C
Tsold Plastic Body for 10 seconds 260 °C
MdMounting Torque (TO-247 & TO-3P) 1.13 / 10 Nm/lb.in.
Weight TO-268 4.0 g
TO-3P 5.5 g
TO-247 6.0 g
VDSS = 600V
ID25 = 50A
RDS(on) ≤≤
≤≤
≤ 145mΩΩ
ΩΩ
Ω
Features
zFast Intrinsic Rectifier
zAvalanche Rated
zLow RDS(ON) and QG
zLow Package Inductance
Advantages
zHigh Power Density
zEasy to Mount
zSpace Savings
Applications
zSwitch-Mode and Resonant-Mode
Power Supplies
zDC-DC Converters
zLaser Drivers
zAC and DC Motor Drives
zRobotics and Servo Controls
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 600 V
VGS(th) VDS = VGS, ID = 4mA 3.0 5.0 V
IGSS VGS = ±30V, VDS = 0V ±100 nA
IDSS VDS = VDSS, VGS = 0V 25 μA
TJ = 125°C 2 mA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 145 mΩ
G = Gate D = Drain
S = Source Tab = Drain
TO-247 (IXFH)
G
SD (Tab)
D
TO-268 (IXFT)
S
G
D (Tab)
TO-3P (IXFQ)
D
G
S
D (Tab)
Preliminary Technical Information
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFT50N60P3 IXFQ50N60P3
IXFH50N60P3
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 20V, ID = 0.5 • ID25, Note 1 32 55 S
Ciss 6300 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 630 pF
Crss 2.5 pF
RGi Gate Input Resistance 1.0 Ω
td(on) 31 ns
tr 20 ns
td(off) 62 ns
tf 17 ns
Qg(on) 94 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 27 nC
Qgd 23 nC
RthJC 0.12 °C/W
RthCS (TO-247 & TO-3P) 0.25 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 50 A
ISM Repetitive, Pulse Width Limited by TJM 200 A
VSD IF = IS, VGS = 0V, Note 1 1.4 V
trr 250 ns
IRM 11 A
QRM 1.1 μC
IF = 25A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
e
∅ P
TO-247 Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-268 Outline
Terminals: 1 - Gate 2,4 - Drain
3 - Source
TO-3P Outline
© 2012 IXYS CORPORATION, All Rights Reserved
IXFT50N60P3 IXFQ50N60P3
IXFH50N60P3
Fi g. 1. O u tp u t C har acter i st i cs @ T
J
= 25ºC
0
5
10
15
20
25
30
35
40
45
50
01234567
V
DS
- Volts
I
D
- Ampere s
V
GS
= 10V
7V
5
V
6
V
Fi g. 2. Exten d ed Ou t p u t C hara cter i sti cs @ T
J
= 25ºC
0
10
20
30
40
50
60
70
80
90
100
0 5 10 15 20 25 30
V
DS
- Vo lts
I
D
- Ampere s
V
GS
= 10V
8V
6
V
5
V
7
V
Fi g . 3. Ou tp u t C har acter i st i cs @ T
J
= 125º C
0
5
10
15
20
25
30
35
40
45
50
024681012141618
V
DS
- Volts
I
D
- A mperes
5
V
6V
4V
V
GS
= 10V
7V
Fig. 4. R
DS(on)
No r mal i z ed to I
D
= 25A Valu e vs.
Junction T emperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
-50 -25 0 25 50 75 100 125 150
T
J
- Deg re es Centigrade
R
DS(on)
- Normali zed
V
GS
= 10V
I
D
= 50A
I
D
= 25A
Fig. 5. R
DS(on)
Normalized to I
D
= 25A Valu e vs.
Drain Current
0.6
1.0
1.4
1.8
2.2
2.6
3.0
0 102030405060708090100
I
D
- Amp e res
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fi g. 6. Maximu m Dr ain C ur r en t vs.
Case Temper atu r e
0
10
20
30
40
50
60
-50-250 255075100125150
T
C
- Deg re es Centigrade
I
D
- A mperes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFT50N60P3 IXFQ50N60P3
IXFH50N60P3
Fig. 7. Input Admittance
0
10
20
30
40
50
60
70
80
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
V
GS
- Vo lts
I
D
- Amperes
T
J
= 1 25ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
20
40
60
80
100
120
0 1020304050607080
I
D
- Amp eres
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
20
40
60
80
100
120
140
0.30.40.50.60.70.80.91.01.11.2
V
SD
- Vo lts
I
S
- Ampere s
T
J
= 1 25ºC T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 102030405060708090100
Q
G
- NanoCoulombs
V
GS
- Volt s
V
DS
= 300V
I
D
= 25A
I
G
= 10mA
Fig. 11. Capacitance
1
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Ca pacitance - PicoFara ds
f
= 1 MHz
Ciss
Crss
Coss
Fi g . 12. Fo r war d -B i as Safe Op er ati n g Area
1
10
100
1000
10 100 1,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
100µs
1ms
R
DS(on)
Limit
© 2012 IXYS CORPORATION, All Rights Reserved
IXFT50N60P3 IXFQ50N60P3
IXFH50N60P3
IXYS REF: F_50N60P3(W8)03-10-11
Fi g. 13. Maximu m T r an si en t Th er mal I mpedan ce
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fi g . 13. Maximu m T r an si en t Th er mal I mpedan ce
AAAAA
0.2