GBPC35005/W–GBPC3510/W
Vishay Lite–On Power Semiconductor
Rev . A2, 24-Jun-98 1 (4)
35A Glass Passivated Bridge Rectifier
Features
D
Glass passivated die construction
D
Diffused junction
D
Low reverse leakage current
D
Low power loss, high efficiency
D
Surge overload rating to 400A peak
D
Electrically isolated metal base for maximum
heat dissipation
D
Case to terminal isolation voltage 2500V
D
UL listed under recognized component index ,
file number E95060 14 452
GBPC – W
GBPC
Absolute Maximum Ratings
Tj = 25
_
CParameter Test
Conditions Type Symbol Value Unit
Repetitive peak reverse voltage GBPC35005/W VRRM 50 V
g
=Working peak reverse voltage
DC Bl ki lt
GBPC3501/W
RRM
=VRWM
V
100 V
=DC Blocking voltage GBPC3501/W =VR200 V
GBPC3501/W 400 V
GBPC3501/W 600 V
GBPC3501/W 800 V
GBPC3501/W 1000 V
Peak forward surge current IFSM 400 A
Average forward current TC=50
°
C IFAV 35 A
Junction and storage temperature range Tj=Tstg –65...+150
°
C
Electrical Characteristics
Tj = 25
_
CParameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=17.5A VF1.1 V
Reverse current TC=25
°
C IR5
m
A
TC=125
°
C IR500
m
A
I2t Rating for fusing I2t 660 A2s
Diode capacitance VR=4V, f=1MHz CD300 pF
Thermal resistance junction to case mounted on heatsink RthJC 3.0 K/W
GBPC35005/W–GBPC3510/W
Vishay Lite–On Power Semiconductor
Rev . A2, 24-Jun-982 (4)
Characteristics (Tj = 25
_
C unless otherwise specified)
0
10
20
0 25 50 75 100 125 150
30
40
15680 Tamb – Ambient Temperature ( °C )
I – Average Forward Current ( A )
FAV
Resistive or inductive load
Mounted on a
220 x 220 x 50 mm
AL plate heatsink
Figure 1. Max. Average Forward Current vs.
Ambient Temperature
0.01
0.1
1.0
10
100
0 0.4 0.8 1.0 1.6 1.80.60.2 1.2 1.4
IF Pulse Width = 300 µs
15681
I – Forward Current ( A )
F
VF – Forward Voltage ( V )
Tj = 25°C
Figure 2. Typ. Forward Current vs. Forward Voltage
0
100
200
300
400
1 10 100
Single Half Sine–Wave
(JEDEC Method)
I – Peak Forward Surge Current ( A )
FSM
Number of Cycles at 60 Hz
15682
Tj = 150°C
Figure 3. Max. Peak Forward Surge Current vs.
Number of Cycles
10
100
1000
0.1 1.0 10 100
Tj = 25°C
f = 1 MHz
C – Diode Capacitance ( pF )
D
VR – Reverse Voltage ( V )
15683
Figure 4. Typ. Diode Capacitance vs. Reverse Voltage
0.01
0.1
1.0
10
100
4020 60 80 100 120 140
Percent of Rated Peak Reverse Voltage (%)
15684
Tj = 25°C
Tj = 130°C
Tj = 125°C
0
50V – 400V
600V – 1000V
I – Reverse Current ( A )
R
m
Figure 5. Typ. Reverse Current vs. Percent of
Rated Peak Reverse Voltage
GBPC35005/W–GBPC3510/W
Vishay Lite–On Power Semiconductor
Rev . A2, 24-Jun-98 3 (4)
Dimensions in mm
14477
Case: molded plastic with heatsink internally mounted in the bridge encapsulation
Polarity: as marked on case
Approx. weight: GBPC 18 grams,
GBPC–W 14.5 grams
Mounting: through hole for #10 screw
Mounting torque: 8.0 Inch–pounds maximum
Mounting position: any
Marking: type number
GBPC35005/W–GBPC3510/W
Vishay Lite–On Power Semiconductor
Rev . A2, 24-Jun-984 (4)
Ozone Depleting Substances Policy Statement
It is the policy of V ishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known
as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized
application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out
of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
