BCW68GLT1G - ON Semiconductor - Datasheet.Support

August, 2009 − Rev. 5

1Publication Order Number:

BCW68GLT1/D

BCW68GLT1G

General Purpose Transistor

PNP Silicon

Features

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage VCEO −45 Vdc

Collector−Base Voltage VCBO −60 Vdc

Emitter−Base Voltage VEBO −5.0 Vdc

Collector Current − Continuous IC−800 mAdc

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to

stresses above the Recommended Operating Conditions may affect device

reliability.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board

(Note 1) TA = 25°C

Derate above 25°C

PD225

1.8

mW/°C

Thermal Resistance,

Junction−to−Ambient

RqJA 556 °C/W

Total Device Dissipation

Alumina Substrate (Note 2)

TA = 25°C

Derate above 25°C

PD300

2.4

mW/°C

Thermal Resistance,

Junction−to−Ambient

RqJA 417 °C/W

Junction and Storage Temperature TJ, Tstg −55 to +150 °C

1. FR−5 = 1.0 0.75 0.062 in.

2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.

SOT−23

CASE 318

STYLE 6

http://onsemi.com

DG = Specific Device Code

M = Date Code*

G= Pb−Free Package

MARKING DIAGRAM

Device Package Shipping†

ORDERING INFORMATION

BCW68GLT1G SOT−23

(Pb−Free)

3000 / Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

DG MG

COLLECTOR

BASE

EMITTER

(Note: Microdot may be in either location)

BCW68GLT3G SOT−23

(Pb−Free)

10000 / Tape & Reel

*Date Code orientation and/or overbar may vary

depending upon manufacturing location.

BCW68GLT1G

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) V(BR)CEO −45 − − Vdc

Collector−Emitter Breakdown Voltage (IC = −10 mAdc, VEB = 0) V(BR)CES −60 − − Vdc

Emitter−Base Breakdown Voltage (IE = −10 mAdc, IC = 0) V(BR)EBO −5.0 − − Vdc

Collector Cutoff Current

(VCE= −45 Vdc, IE = 0)

(VCE= −45 Vdc, IB = 0, TA = 150°C)

ICES

−

−20

−10

nAdc

mAdc

Emitter Cutoff Current (VEB = −4.0 Vdc, IC = 0) IEBO − − −20 nAdc

ON CHARACTERISTICS

DC Current Gain

(IC = −10 mAdc, VCE = −1.0 Vdc)

(IC = −100 mAdc, VCE = −1.0 Vdc)

(IC = −300 mAdc, VCE = −1.0 Vdc)

hFE

120

160

−

400

−

Collector−Emitter Saturation Voltage (IC = −300 mAdc, IB = −30 mAdc) VCE(sat) − − −1.5 Vdc

Base−Emitter Saturation Voltage (IC = −500 mAdc, IB = −50 mAdc) VBE(sat) − − −2.0 Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = −20 mAdc, VCE = −10 Vdc, f = 100 MHz)

fT100 − − MHz

Output Capacitance

(VCB= −10 Vdc, IE = 0, f = 1.0 MHz)

Cobo − − 18 pF

Input Capacitance

(VEB= −0.5 Vdc, IC = 0, f = 1.0 MHz)

Cibo − − 105 pF

Noise Figure

(IC= −0.2 mAdc, VCE = −5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz, BW = 200 Hz)

NF− − 10 dB

BCW68GLT1G

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PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AN

ǒmm

inchesǓ

SCALE 10:1

0.8

0.031

0.9

0.035

0.95

0.037

0.95

0.037

2.0

0.079

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD

THICKNESS IS THE MINIMUM THICKNESS OF

BASE MATERIAL.

4. 318−01 THRU −07 AND −09 OBSOLETE, NEW

STANDARD 318−08.

VIEW C

0.25

SEE VIEW C

DIM

MIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.001

b0.37 0.44 0.50 0.015

c0.09 0.13 0.18 0.003

D2.80 2.90 3.04 0.110

E1.20 1.30 1.40 0.047

e1.78 1.90 2.04 0.070

L0.10 0.20 0.30 0.004

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

NOM MAX

2.10 2.40 2.64 0.083 0.094 0.104HE

0.35 0.54 0.69 0.014 0.021 0.029

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any

liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental

damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over

time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under

its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body,

or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death

may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees,

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personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.

SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

BCW68GLT1/D

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