Zowie Technology Corporation
General Purpose Transistor
NPN Silicon
MMBT3904 1
2
1
2
33
SOT-23
Rating Symbol Value Unit
Characteristic Symbol Min. Max. Unit
Collector-Emitter Voltage VCEO 40 Vdc
Collector-Base Voltage VCBO 60 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Current-Continuous IC200 mAdc
Characteristic Symbol Max. Unit
Total Device Dissipation FR-5 Board(1) TA=25oC
Derate above 25oCPD225
1.8 mW
mW / oC
Total Device Dissipation Alumina Substrate,(2) TA=25oC
Derate above 25oCPD
V(BR)CBO
300
2.4
60 -
mW
mW / oC
Thermal Resistance Junction to Ambient 556 oC / W
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKING
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
V(BR)CEO 40 - Vdc
Vdc
OFF CHARACTERISTICS
R
JA
Thermal Resistance Junction to Ambient 417 oC / WR
JA
Junction and Storage Temperature
Collector-Base Breakdowe Voltage
( IC=10 uAdc, IE=0 )
V(BR)EBO 6.0 - Vdc
Emitter-Base Breakdowe Voltage
( IE=10 uAdc, IC=0 )
Collector-Emitter Breakdowe Voltage(3)
( IC=1.0mAdc, IB=0 )
IBL - 50 nAdc
Base Cutoff Current
( VCE=30 Vdc, VEB=3.0 Vdc )
ICEX - 50 nAdc
Collector Cutoff Current
( VCE=30 Vdc, VEB=3.0 Vdc )
MMBT3904=1AM
-55 to +150 oCTJ,TSTG
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EMITTER
BASE
COLLECTOR
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Characteristic Symbol Min. Max. Unit
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) (Continued)
HFE
40
70
100
60
30
-
-
300
-
-
-
ON CHARACTERISTICS(3)
VCE(sat) Vdc
DC Current Gain
( IC=0.1 mAdc, VCE=1.0 Vdc )
( IC=1.0 mAdc, VCE=1.0 Vdc )
( IC=10 mAdc, VCE=1.0 Vdc )
( IC=50 mAdc, VCE=1.0 Vdc )
( IC=100 mAdc, VCE=1.0 Vdc )
Collector-Emitter Saturation Voltage(3)
( IC=10 mAdc, IB=1.0 mAdc )
( IC=50 mAdc, IB=5.0 mAdc ) -
-0.2
0.3
VBE(sat) Vdc
Base-Emitter Saturation Voltage(3)
( IC=10 mAdc, IB=1.0 mAdc )
( IC=50 mAdc, IB=5.0 mAdc ) 0.65
-0.85
0.95
fT
Cobo
300
-
-
4.0
MHZ
SMALL-SIGNAL CHARACTERISTIC
Cibo pF
pF
Current-Gain-Bandwidth Product
( IC=10 mAdc, VCE=20 Vdc, f=100 MHZ )
Output Capacitance
( VCB=5.0 Vdc, IE=0, f=1.0 MHZ )
Input Capacitance
( VEB=0.5 Vdc, IC=0, f=1.0 MHZ )
Input Impedance
( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ )
- 8.0
hie k ohms1.0 10
Voltage Feedback Ratio
( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ ) hre X 10-4
0.5 8.0
Small-Signal Current Gain
( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ ) hfe -100 400
Output Admittance
( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ ) hoe u mhos1.0 40
Noise Figure
( VCE=5.0 Vdc, IC=100 uAdc, RS=1.0 k ohm, f=1.0 kHZ ) NFdB- 5.0
tr
td - 35
SWITCHING CHARACTERISTICS
ts
nS
Rise Time
Delay Time
Storage Time
- 35
tf nS
Fall Time
( VCC=3.0 Vdc, VBE=-0.5 Vdc,
IC=10 mAdc, IB1=1.0 mAdc )
( VCC=3.0 Vdc,
IC=10 mAdc, IB1=IB2=1.0 mAdc ) -
-
200
50
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
(3) Pulse Test : Pulse Width 300uS, Duty Cycle 2.0%.
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Zowie Technology Corporation MMBT3904
Figure 1. Delay and Rise Time
Equivalent Test Circuit Figure 2. Storage and Fall Time
Equivalent Test Circuit
+ 3 V
275
10 k
1N916 CS < 4 pF*
+3 V
275
10 k
CS < 4 pF*
< 1 ns
±0.5 V
+10.9 V
300 ns
DUTY CYCLE = 2%
< 1 ns
- 9.1 V
+10.9 V
DUTY CYCLE = 2%
t1
0
10 < t1< 500us
* Total shunt capacitance of test jig and connectors
REVERSE BIAS VOLTAGE ( VOLTS )
2.0
3.0
5.0
7.0
10
1.0
0.1
IC, COLLECTOR CURRENT ( mA )
5000
1.0
Q, CHARGE (pC)
3000
2000
1000
500
300
200
700
100
50
70
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
CAPACITANCE ( pF )
1.0 2.0 3.0 5.0 7.0 10 20 30 40
0.2 0.3 0.5 0.7
Cibo
Cobo
TJ=25oC
TJ=125oC
TYPICAL TRANSIENT CHARACTERISTICS
VCC=40 V
IC/IB=10
Figure 3. Capacitance Figure 4. Charge Data
QT
QA
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Figure 5. Turn-On Time
IC, COLLECTOR CURRENT ( mA )
70
100
200
300
500
50
Figure 6. Rise Time
Figure 7. Storage Time Figure 8. Fall Time
IC, COLLECTOR CURRENT ( mA )
TIME (ns)
1.0 2.0 3.0 10 20 70
5100
tr, RISE TIME ( ns )
IC, COLLECTOR CURRENT ( mA )
5.0 7.0 30 50 200
10
30
7
20
70
100
200
300
500
50
1.0 2.0 3.0 10 20 70
5100
5.0 7.0 30 50 200
10
30
7
20
70
100
200
300
500
50
5
10
30
7
20
70
100
200
300
500
50
5
10
30
7
20
tf, FALL TIME ( ns )
t's, STORAGE TIME ( ns )
td @ VOB=0 V
tr @ VCC=3.0 V
IC/IB=10
40 V
15 V
2.0 V
1.0 2.0 3.0 10 20 70 100
5.0 7.0 30 50 200
IC/IB=20
IC/IB=20
IC/IB=10
IC/IB=10 IB1/IB2
t'S = tS - 1/8tf
IC, COLLECTOR CURRENT ( mA )
1.0 2.0 3.0 10 20 70 100
5.0 7.0 30 50 200
IC/IB=20
IC/IB=10
VCC=40 V
IB1=IB2
Figure 9.
f, FREQUENCY (kHz)
4
6
8
10
12
2
NF, NOISE FIGURE ( bB )
00.1 1.0 2.0 4.0 10 20 40
0.2 0.4 100
Figure 10.
RS, SOURCE RESISTANCE ( k OHMS )
0
4
6
8
10
12
14
2
NF, NOISE FIGURE ( bB )
0.1 1.0 2.0 4.0 10 20 40
0.2 0.4 100
SOURCE RESISTANCE=200
IC=1.0 mA
SOURCE RESISTANCE=200
IC=0.5 mA
SOURCE RESISTANCE=500
IC=100uA
SOURCE RESISTANCE=1.0 K
IC=50uA
f = 1.0 KHZIC =1.0 mA
IC =0.5 mA
IC =50 uA
IC =100 uA
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Figure 11. Current Gain
IC, COLLECTOR CURRENT ( mA ) Figure 12. Output Admittance
Figure 13. Input Impedance
Figure 15. DC Current Gain
Figure 14. Voltage Feedback Ratio
IC, COLLECTOR CURRENT ( mA )
hfe, CURRENT GAIN
hoe, OUTPUTADMITTANCE (umhos)
IC, COLLECTOR CURRENT ( mA ) IC, COLLECTOR CURRENT ( mA )
hre, VOLTAGE FEEDBACK RATIO(X 10-4)
hie, INPUT IMPEDANCE (k OHMS)
70
100
200
300
50
30
100
50
5
10
20
2
1
0.1 0.2 1.0 2.0 5.0 10
0.3 0.5 3.0 0.1 0.2 1.0 2.0 5.0 10
0.3 0.5 3.0
2.0
3.0
5.0
7.0
10
1.0
0.5
0.7
2.0
5.0
10
20
1.0
0.2
0.5
0.1 0.2 1.0 2.0 5.0 10
0.3 0.5 3.0 0.1 0.2 1.0 2.0 5.0 10
0.3 0.5 3.0
IC, COLLECTOR CURRENT ( mA )
0.3
0.5
0.7
1.0
2.0
0.2
0.1
hFE, DC CURRENT GAIN (NORMALIZED)
0.5 2.0 3.0 10 50 70
0.2 0.3
0.1 100
1.00.7 200
30205.0 7.0
TYPICAL STATIC CHARACTERISTICS
TJ = +25oC
TJ = -55oC
TJ = +125oCVCE=1.0V
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Figure 17. " ON " Voltage
Figure 16. Collector Saturation Region
Figure 18. Temperature Coefficients
IC, COLLECTOR CURRENT ( mA ) IC, COLLECTOR CURRENT ( mA )
COEFFICIENT ( mV / oC )
V, VOLTAGE ( VOLTS )
IB, BASE CURRENT ( mA )
0.4
0.6
0.8
1.0
0.2
0.1
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
0.5 2.0 3.0 100.2 0.3
01.00.7 5.0 7.00.070.050.030.020.01
IC = 1.0 mA 10 mA 30 mA 100 mA
TJ = 25oC
0.4
0.6
0.8
1.0
1.2
0.2
1.0 2.0 5.0 10 20 50
0100
-0.5
0
0.5
1.0
0 60 80 120 140 160 180
20 40 100 200
-1.0
-1.5
-2.0
200
VB FOR VBE(sat)
VC FOR VCE(sat)
+25oC to +125oC
-55oC to +25oC
-55oC to +25oC
+25oC to +125oC
VBE(sat) @ IC/IB=10
VCE(sat) @ IC/IB=10
VBE @ ICE=1.0 V
