2e5C D MM 4235605 0004906 S MMSIEG ~ 7-29-23 NPN Silicon Planar Transistor 2N 3019 SIEMENS AKTIENGESELLSCHAF 2 N 3019 is an epitaxial NPN silicon planar transistor in TO 39 case (5 C 3 DIN 41873). The collector is electrically connected to the case. The transistor is particularly suitable for use in Af amplifiers and for AF switching applications. : Type | | Ordering code ws t 2N 3019 | Q68000-A627 Te yt 135 6 -o4 1 Approx. weight 1.5 g Dimensions in mm Maximum ratings Collector-base voltage Vcso 140 Vv Collector-emitter voltage Veeco 80 Vv Emitter-base voltage Veso 7 Vv Collector current Ie 1 A Junction temperature Tj 200 C Storage temperature range Tstg 65 to +200 C Total power dissipation (Tamb $ 25 C) Prot 0.8 WwW Total power dissipation (Tyase S 25 C) Prot 5 w Thermal resistance Junction to ambient air Ring $218 K/W Junction to case Ribue $35 K/W 952 2268 A-09 25C D MM 4235605 OO04507 7 MBSIEG . 25 04901 OT RI-2Q3 anaoie SIEMENS AKTIENGESELLSCHAF Static characteristics (Tam, = 25C) Collector-base breakdown voltage (Uc = 100 pA) Vierjcao > 140 Vv Collector-emitter breakdown voltage Uc = 30 mA) Viericeo > 80 Vv Emitter-base breakdown voltage (ig = 100 pA) Vierjeso >7 v Collector-emitter saturation voltage (Uc = 150 mA, Ig = 15 mA) VeEsat <0.2 Vv (ic = 500 mA, Jg = 50 mA) Veecat <0.5 V Base-emitter saturation voltage . Uc = 150 mA, Ig = 15 mA) Veesat <1.1 Vv Collector cutoff current (Vcao = 90 V) Tero <10 nA (Vcpo = 90 V, Tamb = 150C) Tego <10 bA Emitter cutoff current (Vego = 5 V) Tego <10 nA DC current gain (Voge = 10V, Ig = 0.1 mA) hee >50 - (Vee = 10V, Ic = 10 mA) hee >90 - (Veg = 10 V, Ig = 150 mA) hee 100 to 300 - (Voge = 10 V, Ie = 500 mA) hee >50 - (Vee = 10V, Io = 1A) hee >15 - (Vee = 10 V; Ie = 160 mA; Tamb = 55 C) hee >40 - Dynamic charactoaristics (Tamp = 25 C) Transition frequency (Vee = 10 V, Ig = 50 mA, f = 20 MHz) fr > 100 MHz Collector base capacitance (Vepo = 10 V, f = 1 MHz) CcBo <12 pF Emitter base capacitance (Vego = 0.5 V, f= 1 MHz) Cego <60 . pF Small signal current gain Ue = 1 mA, Voce = 5 V, f = 1 kHz) hte 80 to 400 - Feedback time constant (Vee = 10 V, Ic = 10 mA, f = 4 MHz) Tob Che < 400 ps Noise figure (Ig = 100 pA, Voge = 10 V, f = 1 kHz, Rg = 1kQ) NE <4 dB Switching times (Ic = 500 mA; Jg1 = Jg2 = 50 mA) Turn-on time ton < 100 ns Turn-off time tort < 500 ns 953 2269 A-10 25 D M@@ 6235605 0004904 9 MMSIEG 25C 04908 D=-F~QG-2FZ 2N 3019 SIEMENS AKTIENGESELLSCHAF Total perm. power dissipation Permissibie pulse load versus temperature fihuc = f (0; v= parameter Prot = f (1): Vee = parameter & . y W 5 Ces 2 5 4 Prt 1! finne 6 109 2 5 tot ] 5 0 102 0 100 ; 200C oi of wt ww? we 01 ws Permissible operating range A Io= (Weeds (Tease = 60C) et Permissible oparating range A Fo = 4 Wee): (Tease = 126C) 10! 10! 5 5 he Ie te 5 it 22 to 15 15 6 5 3 2 10? 9! 6 10! 102v > Vee 954 2270 A-11 25C D MM@ 8235605 0004909 0 MMSIEG STEMENS AKTIENGESELLSCHAF OC current gain hee = f (Ie) Vee = 10 V; Tarp = parameter 10 hee 0 10! 10 40! 10 107 mA , Ic Collector-emitter saturation voltage Veesst = f lic) ma fre =10 10! 10 2271 A-12 2N 3019 Callector cutoff current versus temperature Jogo = f (Tama) nA Vero = SOV 1 tom 0 ba 100 150C fan Base-emitter saturation voltage Vacsat = f Uc) mA Pre = 10; Vee =1V a 6 rf te 5 wi 0 0 05 iT BV > Veesat 955 25C D M@@ 8235605 0004910 7 MESIEG Z5C 04910 ~ STEMENS AKTIENGESELLSCHAF Collector current Jc = f (Vee) MA Vee = 1V 10 le 5 0 5 10 1 0 0 05 0 1,5V > Veg Test circuit for switching times TOus +E. pein fe Tins RyeQ 956 2272s Aw13 D T A q- 23. i 2N 3019 Transition frequency fy = f (ic) Kuz Vee = 10V 0 wt 0 - 6 10) 5 10 4 5 ima