PN2222A MMBT2222A PZT2222A C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1P MMPQ2222 E B E B E B SOIC-16 E NMT2222 B C2 E1 C1 C C C C C C C C B2 E2 SOT-6 B1 Mark: 100 NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 75 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuous 1.0 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A N Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 0 40 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 A, IE = 0 75 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 A, IC = 0 6.0 ICEX Collector Cutoff Current VCE = 60 V, VEB(OFF) = 3.0 V ICBO Collector Cutoff Current IEBO Emitter Cutoff Current VCB = 60 V, IE = 0 VCB = 60 V, IE = 0, TA = 150C VEB = 3.0 V, IC = 0 IBL Base Cutoff Current VCE = 60 V, VEB(OFF) = 3.0 V V 10 nA 0.01 10 10 A A nA 20 nA ON CHARACTERISTICS hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage* VBE(sat) Base-Emitter Saturation Voltage* SMALL SIGNAL CHARACTERISTICS IC = 0.1 mA, VCE = 10 V IC = 1.0 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 10 mA, VCE = 10 V, TA = -55C IC = 150 mA, VCE = 10 V* IC = 150 mA, VCE = 1.0 V* IC = 500 mA, VCE = 10 V* IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 1.0 mA IC = 500 mA, IB = 5.0 mA 35 50 75 35 100 50 40 0.6 300 0.3 1.0 1.2 2.0 V V V V (except MMPQ2222 and NMT2222) fT Current Gain - Bandwidth Product IC = 20 mA, VCE = 20 V, f = 100 MHz Cobo Output Capacitance VCB = 10 V, IE = 0, f = 100 kHz 8.0 pF Cibo Input Capacitance VEB = 0.5 V, IC = 0, f = 100 kHz 25 pF rb'CC Collector Base Time Constant IC = 20 mA, VCB = 20 V, f = 31.8 MHz 150 pS NF Noise Figure 4.0 dB Re(hie) Real Part of Common-Emitter High Frequency Input Impedance IC = 100 A, VCE = 10 V, RS = 1.0 k, f = 1.0 kHz IC = 20 mA, VCE = 20 V, f = 300 MHz 60 10 ns SWITCHING CHARACTERISTICS 300 MHz (except MMPQ2222 and NMT2222) td Delay Time VCC = 30 V, VBE(OFF) = 0.5 V, tr Rise Time IC = 150 mA, IB1 = 15 mA 25 ns ts Storage Time VCC = 30 V, IC = 150 mA, 225 ns tf Fall Time IB1 = IB2 = 15 mA 60 ns *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% Spice Model NPN (Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6 Vtf=1.7 Xtf=3 Rb=10) PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A NPN General Purpose Amplifier (continued) Thermal Characteristics Symbol PD TA = 25C unless otherwise noted Characteristic Max RJC Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case RJA Thermal Resistance, Junction to Ambient Symbol PD PN2222A 625 5.0 83.3 *PZT2222A 1,000 8.0 200 125 Characteristic mW mW/C C/W C/W Max **MMBT2222A 350 2.8 357 Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die RJA Units Units MMPQ2222 1,000 8.0 mW mW/C C/W C/W C/W 125 240 2 *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm . **Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." Typical Pulsed Current Gain vs Collector Current Collector-Emitter Saturation Voltage vs Collector Current 500 0.4 VCE = 5V = 10 400 0.3 125 C 300 125 C 0.2 200 25 C 25 C 0.1 100 - 40 C 0 0.1 0.3 - 40 C 1 3 10 30 100 I C - COLLECTOR CURRENT (mA) 300 CESAT h FE - TYPICAL PULSED CURRENT GAIN Typical Characteristics 1 Base-Emitter Saturation Voltage vs Collector Current = 10 1 - 40 C 0.8 25 C 0.6 125 C 0.4 1 10 100 I C - COLLECTOR CURRENT (mA) Pr19 10 100 I C - COLLECTOR CURRENT (mA) 500 Pr19 500 VBE(ON)- BASE-EMITTER ON VOLTAGE (V) VBESAT- BASE-EMITTER VOLTAGE (V) Pr19 Base-Emitter ON Voltage vs Collector Current 1 VCE = 5V 0.8 - 40 C 0.6 25 C 125 C 0.4 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) Pr19 25 PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A NPN General Purpose Amplifier (continued) Typical Characteristics (continued) Emitter Transition and Output Capacitance vs Reverse Bias Voltage 500 100 V CB 20 = 40V CAPACITANCE (pF) I CBO- COLLECTOR CURRENT (nA) Collector-Cutoff Current vs Ambient Temperature 10 1 0.1 f = 1 MHz 16 12 C te 8 C ob 4 25 50 75 100 125 T A - AMBIENT TEMPERATURE ( C) 150 0.1 1 10 REVERSE BIAS VOLTAGE (V) 100 Pr19 Switching Times vs Collector Current Turn On and Turn Off Times vs Collector Current 400 400 I B1= I B2= I B1 = I B2= 320 TIME (nS) 160 t off 80 240 ts 160 tr tf 80 t on 0 10 Ic 10 V cc = 25 V V cc = 25 V 240 td 100 I C - COLLECTOR CURRENT (mA) 0 10 1000 100 I C - COLLECTOR CURRENT (mA) Pr19 Pr19 Power Dissipation vs Ambient Temperature 1 PD - POWER DISSIPATION (W) TIME (nS) 320 Ic 10 SOT-223 0.75 TO-92 0.5 SOT-23 0.25 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 1000 PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A NPN General Purpose Amplifier (continued) Test Circuits 30 V 200 16 V 1.0 K 0 200ns 500 FIGURE 1: Saturated Turn-On Switching Time 6.0 V - 15 V 1k 30 V 1.0 K 0 200ns 50 FIGURE 2: Saturated Turn-Off Switching Time 37 PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A NPN General Purpose Amplifier