TIP145T/146T/147T ky SGS-THOMSON ~ TIP1401/141T/142T MICROELECTRONICS LOW VOLTAGE HIGH CURRENT POWER DARLINGTON = MONOLITHIC DARLINGTON CONFIGURA- TION a LOW VOLTAGE a HIGH CURRENT # HIGH GAIN DESCRIPTION The TIP140T, TIP141T and TIP142T are silicon multiepitaxial base NPN transistor in monolithic Dar- lington configuration mounted in TO-220 package. They are intended for use in power linear and swit- ching applications. The complementary PNP types are the TIP145T, TIP146T and TIP1477T respective- ly. INTERNAL SCHEMATIC DIAGRAM ADVANCE DATA TO-220 ABSOLUTE MAXIMUM RATINGS Value Symbol Parameter TIP140T | TIP1417T | TIP142T | Unit TIP145T | TIP146T | TIP147T Vcso | Collector-base Voltage (iz = 0) 60 80 100 Vv Vceo | Collector-emitter Voltage (Ig = 0) 60 80 100 Vv Veso Emitter-base Voltage (Ico = 0) 5 v lo Collector Current 15 A lem Collector Peak Current (tp < 5ms) 20 A la Base Current 0.5 A Prot Total Dissipation at T, < 25C 125 Ww Tstg Storage Temperature 65 to 150 C Tj Max. Operating Junction Temperature 150 C For PNP types voltage and current values are negative. February 1989 1/2 This is advanced information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1035 TIP140T/1417/142T/145T/146T/147T THERMAL DATA Rithj-case Thermal Resistance Junction-case max ELECTRICAL CHARACTERISTICS (T,252 = 25C unless otherwise specified) C/W Symbol Parameter Test Conditions Min. Typ. Max. Unit lego Collector Cutoff Current Vers = 60V for TIP140T/145T 1 mA (le =0) Vcp = 80V for TIP141T/146T 1 mA Vcop = 100V for TIP142T/147T 1 mA IcEo Collector Cutoff Current Voce = 30V for TIP140T/145T 2 mA (Ig =0) Voce =40V for TIP141T/146T 2 mA Voce = 50V for TIP 142T/147T 2 mA lEBO Emitter Cutoff Current Vep = 5V 2 mA (Ic = 9) Vegoysus}| Collector-emitter Ic =30mMA for TIP140T/145T 60 v Sustaining Valtage for TIP141T/146T 80 Vv for TIP142T/147T 100 Vv Vce(sat)"| Collector-emitter lo = 5A Ip = 10mA 2 Vv Saturation Voltage Io =10A Ig =40mA 3 Vv VaeE(on)* | Base-emitter Voltage Ic = 10A Vee =4V 3 Vv hre* DC Current Gain lc =5A Vee =4V 1000 Io = 10A Voe =4V 500 RESISTIVE LOAD ton Turn-on Time Io =10A Ig, =10mA 0.9 us tort Turn-off Time Ip2 =40mA R, =3Q 4 us * Pulsed : pulse duration = 300us, duty cycle = 1.5%. For PNP types voltage and current value are negative. 2/2 &r SGS-THOMSON I4 icrosecTRomes 1036