BZX84CxxxET1G Series, SZBZX84CxxxET1G Series Zener Voltage Regulators 225 mW SOT-23 Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT-23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand held portables, and high density PC boards. http://onsemi.com Specification Features 225 mW Rating on FR-4 or FR-5 Board Zener Breakdown Voltage Range - 2.4 V to 75 V Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications ESD Rating of Class 3 (> 16 kV) per Human Body Model Peak Power - 225 W (8 X 20 ms) AEC-Q101 Qualified and PPAP Capable SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements Pb-Free Packages are Available* SOT-23 CASE 318 STYLE 8 3 Cathode MARKING DIAGRAM xxx M G G Mechanical Characteristics CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260C for 10 Seconds Symbol Max Unit Peak Power Dissipation @ 20 ms (Note 1) @ TL 25C Ppk 225 W Total Power Dissipation on FR-5 Board, (Note 2) @ TA = 25C Derated above 25C Thermal Resistance, Junction-to-Ambient PD Total Power Dissipation on Alumina Substrate, (Note 3) @ TA = 25C Derated above 25C Thermal Resistance, Junction-to-Ambient PD RqJA Junction and Storage Temperature Range TJ, Tstg = Device Code = Date Code* = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. MAXIMUM RATINGS RqJA 1 xxx M G POLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V-0 Rating 1 Anode ORDERING INFORMATION Package Shipping BZX84CxxxET1G SOT-23 (Pb-Free) 3,000 / Tape & Reel SZBZX84CxxxET1G SOT-23 (Pb-Free) 3,000 / Tape & Reel BZX84CxxxET3G SOT-23 (Pb-Free) 10,000 / Tape & Reel SZBZX84CxxxET3G SOT-23 (Pb-Free) 10,000 / Tape & Reel Device 225 1.8 556 mW mW/C C/W 300 2.4 417 mW mW/C C/W -65 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Nonrepetitive current pulse per Figure 9. 2. FR-5 = 1.0 X 0.75 X 0.62 in. 3. Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. See specific marking information in the device marking column of the Electrical Characteristics table on page 3 of this data sheet. Semiconductor Components Industries, LLC, 2012 January, 2012 - Rev. 8 1 DEVICE MARKING INFORMATION Publication Order Number: BZX84C2V4ET1/D BZX84CxxxET1G Series, SZBZX84CxxxET1G Series ELECTRICAL CHARACTERISTICS (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) Symbol Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF C IF Parameter VZ QVZ I VZ VR IR VF IZT Maximum Temperature Coefficient of VZ Max. Capacitance @ VR = 0 and f = 1 MHz Zener Voltage Regulator http://onsemi.com 2 V BZX84CxxxET1G Series, SZBZX84CxxxET1G Series ELECTRICAL CHARACTERISTICS (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) VZ1 (V) @ IZT1 = 5 mA (Note 4) Device Marking Min Nom Max ZZT1 (W) @ IZT1 = 5 mA BZX84C2V4ET1G BA1 2.2 2.4 2.6 BZX84C2V7ET1G BA2 2.5 2.7 2.9 BZX84C3V0ET1G BA3 2.8 3.0 BZX84C3V3ET1G BA4 3.1 BZX84C3V6ET1G BA5 BZX84C3V9ET1G VZ2 (V) @ IZT2 = 1 mA (Note 4) Min Max ZZT2 (W) @ IZT2 = 1 mA 100 1.7 2.1 100 1.9 2.4 3.2 95 2.1 3.3 3.5 95 3.4 3.6 3.8 BA6 3.7 3.9 BZX84C4V3ET1G BA7 4.0 BZX84C4V7ET1G BA9 4.4 BZX84C5V1ET1G BB1 BZX84C5V6ET1G VZ3 (V) @ IZT3=20 mA (Note 4) Max Reverse Leakage Current qVZ C (pF) (mV/k) @ @ IZT1=5 mA VR = 0 f= Min Max 1 MHz Min Max ZZT3 (W) @ IZT3= 20 mA 600 2.6 3.2 50 50 1.0 -3.5 0 450 600 3.0 3.6 50 20 1.0 -3.5 0 450 2.7 600 3.3 3.9 50 10 1.0 -3.5 0 450 2.3 2.9 600 3.6 4.2 40 5.0 1.0 -3.5 0 450 90 2.7 3.3 600 3.9 4.5 40 5.0 1.0 -3.5 0 450 4.1 90 2.9 3.5 600 4.1 4.7 30 3.0 1.0 -3.5 -2.5 450 4.3 4.6 90 3.3 4.0 600 4.4 5.1 30 3.0 1.0 -3.5 0 450 4.7 5.0 80 3.7 4.7 500 4.5 5.4 15 3.0 2.0 -3.5 0.2 260 4.8 5.1 5.4 60 4.2 5.3 480 5.0 5.9 15 2.0 2.0 -2.7 1.2 225 BB2 5.2 5.6 6.0 40 4.8 6.0 400 5.2 6.3 10 1.0 2.0 -2 2.5 200 BZX84C6V2ET1G BB3 5.8 6.2 6.6 10 5.6 6.6 150 5.8 6.8 6 3.0 4.0 0.4 3.7 185 BZX84C6V8ET1G BB4 6.4 6.8 7.2 15 6.3 7.2 80 6.4 7.4 6 2.0 4.0 1.2 4.5 155 BZX84C7V5ET1G BB5 7.0 7.5 7.9 15 6.9 7.9 80 7.0 8.0 6 1.0 5.0 2.5 5.3 140 BZX84C8V2ET1G BB6 7.7 8.2 8.7 15 7.6 8.7 80 7.7 8.8 6 0.7 5.0 3.2 6.2 135 BZX84C9V1ET1G BB7 8.5 9.1 9.6 15 8.4 9.6 100 8.5 9.7 8 0.5 6.0 3.8 7.0 130 BZX84C10ET1G BB8 9.4 10 10.6 20 9.3 10.6 150 9.4 10.7 10 0.2 7.0 4.5 8.0 130 BZX84C11ET1G BB9 10.4 11 11.6 20 10.2 11.6 150 10.4 11.8 10 0.1 8.0 5.4 9.0 130 BZX84C12ET1G BC1 11.4 12 12.7 25 11.2 12.7 150 11.4 12.9 10 0.1 8.0 6.0 10 130 BZX84C13ET1G BC2 12.4 13 14.1 30 12.3 14 170 12.5 14.2 15 0.1 8.0 7.0 11 120 BZX84C15ET1G BC3 13.8 15 15.6 30 13.7 15.5 200 13.9 15.7 20 0.05 10.5 9.2 13 110 BZX84C16ET1G BC4 15.3 16 17.1 40 15.2 17 200 15.4 17.2 20 0.05 11.2 10.4 14 105 BZX84C18ET1G BC5 16.8 18 19.1 45 16.7 19 225 16.9 19.2 20 0.05 12.6 12.4 16 100 BZX84C20ET1G BC6 18.8 20 21.2 55 18.7 21.1 225 18.9 21.4 20 0.05 14 14.4 18 85 BZX84C22ET1G BC7 20.8 22 23.3 55 20.7 23.2 250 20.9 23.4 25 0.05 15.4 16.4 20 85 BZX84C24ET1G BC8 22.8 24 25.6 70 22.7 25.5 250 22.9 25.7 25 0.05 16.8 18.4 22 80 Device* VZ2 Below @ IZT2 = 0.1 mA Device Marking Min Nom Max ZZT1 Below @ IZT1 = 2 mA Min Max ZZT3 Below @ IZT3 = 10 mA BZX84C27ET1G BC9 25.1 27 28.9 80 25 28.9 300 25.2 29.3 BZX84C30ET1G BD1 28 30 32 80 27.8 BZX84C33ET1G BD2 31 33 35 80 30.8 32 300 28.1 35 325 31.1 BZX84C36ET1G BD3 34 36 38 90 33.8 38 350 BZX84C39ET1G BD4 37 39 41 130 36.7 41 BZX84C43ET1G BK6 40 43 46 150 39.7 BZX84C47ET1G BD5 44 47 50 170 BZX84C51ET1G BD6 48 51 54 BZX84C56ET1G BZX84C62ET1G BD7 52 56 BD8 58 62 BZX84C68ET1G BD9 64 BZX84C75ET1G BE1 70 Device* Min Max Max Reverse Leakage Current qVZ (mV/k) Below @ IZT1 = 2 mA V IR @ R (V) mA Min Max C (pF) @ VR =0 f= 1 MHz 45 0.05 18.9 21.4 25.3 70 32.4 50 0.05 21 24.4 29.4 70 35.4 55 0.05 23.1 27.4 33.4 70 34.1 38.4 60 0.05 25.2 30.4 37.4 70 350 37.1 41.5 70 0.05 27.3 33.4 41.2 45 46 375 40.1 46.5 80 0.05 30.1 37.6 46.6 40 43.7 50 375 44.1 50.5 90 0.05 32.9 42 51.8 40 180 47.6 54 400 48.1 54.6 100 0.05 35.7 46.6 57.2 40 60 200 51.5 60 425 52.1 60.8 110 0.05 39.2 52.2 63.8 40 66 215 57.4 66 450 58.2 67 120 0.05 43.4 58.8 71.6 35 68 72 240 63.4 72 475 64.2 73.2 130 0.05 47.6 65.6 79.8 35 75 79 255 69.4 79 500 70.3 80.2 140 0.05 52.5 73.4 88.6 35 VZ1 Below @ IZT1 = 2 mA ZZT2 Below @ IZT4 = 0.5 mA V IR @ R (V) mA VZ3 Below @ IZT3 = 10 mA 4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25C * Include SZ-prefix devices where applicable. http://onsemi.com 3 BZX84CxxxET1G Series, SZBZX84CxxxET1G Series 8 100 7 VZ, TEMPERATURE COEFFICIENT (mV/C) VZ, TEMPERATURE COEFFICIENT (mV/C) TYPICAL CHARACTERISTICS TYPICAL TC VALUES 6 5 4 VZ @ IZT 3 VZ @ IZT 10 2 1 0 -1 -2 -3 TYPICAL TC VALUES 2 3 4 5 6 7 8 9 10 VZ, NOMINAL ZENER VOLTAGE (V) 11 12 1 10 100 VZ, NOMINAL ZENER VOLTAGE (V) Figure 1. Temperature Coefficients (Temperature Range - 55C to +150C) Figure 2. Temperature Coefficients (Temperature Range - 55C to +150C) 1000 IZ = 1 mA TJ = 255C IZ(AC) = 0.1 IZ(DC) f = 1 kHz IF, FORWARD CURRENT (mA) Z ZT, DYNAMIC IMPEDANCE ( ) 1000 100 75 V (MMBZ5267BLT1) 91 V (MMBZ5270BLT1) 100 5 mA 20 mA 10 10 150C 1 1 10 VZ, NOMINAL ZENER VOLTAGE 100 1 0.4 Figure 3. Effect of Zener Voltage on Zener Impedance 0.5 75C 25C 0C 0.6 0.7 0.8 0.9 1.0 VF, FORWARD VOLTAGE (V) Figure 4. Typical Forward Voltage http://onsemi.com 4 1.1 1.2 BZX84CxxxET1G Series, SZBZX84CxxxET1G Series TYPICAL CHARACTERISTICS 1000 1000 C, CAPACITANCE (pF) 0 V BIAS I R , LEAKAGE CURRENT (A) TA = 25C 1 V BIAS 100 BIAS AT 50% OF VZ NOM 1 10 1 +150C 0.1 0.01 10 1 100 10 VZ, NOMINAL ZENER VOLTAGE (V) 100 0.001 + 25C 0.0001 -55C 0.00001 0 10 Figure 5. Typical Capacitance 1 0.1 0 2 4 6 8 VZ, ZENER VOLTAGE (V) 100 I Z, ZENER CURRENT (mA) 10 0.01 10 1 0.1 0.01 12 10 TA = 25C 10 50 70 VZ, ZENER VOLTAGE (V) PEAK VALUE IRSM @ 8 ms tr 90 30 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 70 60 50 HALF VALUE IRSM/2 @ 20 ms 40 30 tP 20 10 0 0 90 Figure 8. Zener Voltage versus Zener Current (12 V to 91 V) Figure 7. Zener Voltage versus Zener Current (VZ Up to 12 V) 100 80 Figure 6. Typical Leakage Current TA = 25C % OF PEAK PULSE CURRENT I Z , ZENER CURRENT (mA) 100 20 30 40 50 60 70 VZ, NOMINAL ZENER VOLTAGE (V) 20 40 60 t, TIME (ms) Figure 9. 8 20 ms Pulse Waveform http://onsemi.com 5 80 90 BZX84CxxxET1G Series, SZBZX84CxxxET1G Series PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 --- MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10 STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 http://onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BZX84C2V4ET1/D