April 2007 Rev 8 1/12
12
STW45NM60
N-channel 650V@Tjmax - 0.09Ω - 45A - TO-247
MDmesh™ Power MOSFET
Features
■High dv/dt and avalanche capabilities
■100% avalanche tested
■Low input capacitance and gate charge
■Low gate input resistance
Description
The MDmesh™ is a new revolutionary Power
MOSFET technology that associates the multiple
drain process with the Company’s PowerMESH™
horizontal layout. The resulting product has an
outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the Company’s proprietary strip
technique yields overall dynamic performance
that is significantly better than that of similar
competitor’s products.
Application
■Switching application
Internal schematic diagram
Type VDSS
(@Tjmax) RDS(on) ID
STW45NM60 650V < 0.11Ω45A
TO-247
www.st.com
Order code
Part number Marking Package Packaging
STW45NM60 W45NM60 TO-247 Tube
Contents STW45NM60
2/12
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STW45NM60 Electrical ratings
3/12
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
VGS Gate- source voltage ±30 V
IDDrain current (continuous) at TC = 25°C 45 A
IDDrain current (continuous) at TC = 100°C 28 A
IDM (1)
1. Pulse width limited by safe operating area
Drain current (pulsed) 180 A
PTOT Total dissipation at TC = 25°C 417 W
Derating factor 3.33 W/°C
dv/dt (2)
2. ISD < 45A, di/dt < 400A/µs, VDD < 80% V(BR)DSS
Peak diode recovery voltage slope 15 V/ns
Tstg Storage temperature –65 to 150 °C
TjMax. operating junction temperature 150 °C
Table 2. Thermal data
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case 0.3 °C/W
Rthj-amb Thermal resistance junction-amb 30 °C/W
TlMaximum lead temperature for soldering purpose 300 °C
Table 3. Avalanche characteristics
Symbol Parameter Max value Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max) 15 A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 35 V) 850 mJ
Electrical characteristics STW45NM60
4/12
2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage ID = 250 µA, VGS = 0 600 V
IDSS
Zero gate voltage
Drain current (VGS = 0)
VDS = Max rating 10 µA
VDS = Max rating, TC = 125 °C 100 µA
IGSS
Gate-body leakage
current (VDS = 0) VGS = ±30V ±100 nA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA 3 4 5 V
RDS(on)
Static drain-source on
resistance VGS = 10V, ID = 22.5A 0.09 0.11 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
gfs (1)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Forward transconductance VDS > ID(on) x RDS(on)max,
ID= 22.5A 30 S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1 MHz, VGS = 0
3800
1250
80
pF
pF
pF
Coss eq.(2)
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance VGS = 0V, VDS = 0V to 480V 340 pF
RGGate input resistance
f=1 MHz Gate DC Bias = 0
test signal level = 20mV
open drain
1.4 Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 400V, ID = 45A,
VGS = 10V
Figure 14
96
31
43
134 nC
nC
nC
STW45NM60 Electrical characteristics
5/12
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on)
tr
Turn-on delay time
Rise time
VDD = 250V, ID = 22.5A
RG=4.7Ω VGS = 10V
Figure 13
30
20
ns
ns
tr(Voff)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
VDD = 400V, ID = 45A,
RG=4.7Ω, VGS = 10V
Figure 13
16
23
40
ns
ns
ns
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD Source-drain current 45 A
ISDM Source-drain current (pulsed) 180 A
VSD (1)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Forward on voltage ISD = 45A, VGS = 0 1.5 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 45A,
di/dt = 100A/µs,
VDD = 100 V, Tj = 25°C
Figure 15
508
10
40
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 45A,
di/dt = 100A/µs,
VDD = 100 V, Tj = 150°C
Figure 15
650
14
43
ns
µC
A
Electrical characteristics STW45NM60
6/12
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance
Figure 3. Output characteristics Figure 4. Transfer characteristics
Figure 5. Transconductance Figure 6. Static-drain source on resistance
STW45NM60 Electrical characteristics
7/12
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage
vs temperature
Figure 10. Normalized on resistance vs
temperature
Figure 11. Source-drain diode forward
characteristics
Figure 12. Normalized BVDSS vs temperature
Test circuit STW45NM60
8/12
3 Test circuit
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load
switching and diode recovery times
Figure 16. Unclamped inductive load test
circuit
Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
STW45NM60 Package mechanical data
9/12
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
Package mechanical data STW45NM60
10/12
DIM. mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.85 5.15 0.19 0.20
A1 2.20 2.60 0.086 0.102
b 1.0 1.40 0.039 0.055
b1 2.0 2.40 0.079 0.094
b2 3.0 3.40 0.118 0.134
c 0.40 0.80 0.015 0.03
D 19.85 20.15 0.781 0.793
E 15.45 15.75 0.608 0.620
e5.45 0.214
L 14.20 14.80 0.560 0.582
L1 3.70 4.30 0.14 0.17
L2 18.50 0.728
øP 3.55 3.65 0.140 0.143
øR 4.50 5.50 0.177 0.216
S5.50 0.216
TO-247 MECHANICAL DATA
STW45NM60
12/12
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