STW45NM60 N-channel 650V@Tjmax - 0.09 - 45A - TO-247 MDmeshTM Power MOSFET Features Type VDSS (@Tjmax) RDS(on) ID STW45NM60 650V < 0.11 45A High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-247 Description The MDmeshTM is a new revolutionary Power MOSFET technology that associates the multiple drain process with the Company's PowerMESHTM horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competitor's products. Internal schematic diagram Application Switching application Order code Part number Marking Package Packaging STW45NM60 W45NM60 TO-247 Tube April 2007 Rev 8 1/12 www.st.com 12 Contents STW45NM60 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 ................................................ 8 STW45NM60 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Gate- source voltage 30 V ID Drain current (continuous) at TC = 25C 45 A ID Drain current (continuous) at TC = 100C 28 A IDM (1) Drain current (pulsed) 180 A PTOT Total dissipation at TC = 25C 417 W Derating factor 3.33 W/C 15 V/ns -65 to 150 C 150 C Value Unit VGS dv/dt (2) Tstg Tj Parameter Peak diode recovery voltage slope Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area 2. ISD < 45A, di/dt < 400A/s, VDD < 80% V(BR)DSS Table 2. Symbol Thermal data Parameter Rthj-case Thermal resistance junction-case 0.3 C/W Rthj-amb Thermal resistance junction-amb 30 C/W Maximum lead temperature for soldering purpose 300 C Max value Unit Tl Table 3. Symbol Avalanche characteristics Parameter IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 15 A EAS Single pulse avalanche energy (starting Tj = 25 C, ID = IAR, VDD = 35 V) 850 mJ 3/12 Electrical characteristics 2 STW45NM60 Electrical characteristics (TCASE=25C unless otherwise specified) Table 4. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Test conditions ID = 250 A, VGS = 0 Min. Typ. Max. Unit 600 V VDS = Max rating 10 A VDS = Max rating, TC = 125 C 100 A Gate-body leakage current (VDS = 0) VGS = 30V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250A 4 5 V RDS(on) Static drain-source on resistance VGS = 10V, ID = 22.5A 0.09 0.11 Min. Typ. Max. Unit 30 S IDSS Zero gate voltage Drain current (VGS = 0) IGSS Table 5. Symbol 3 Dynamic Parameter Test conditions VDS > ID(on) x RDS(on)max, ID= 22.5A gfs (1) Forward transconductance Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25V, f = 1 MHz, VGS = 0 3800 1250 80 Equivalent output capacitance VGS = 0V, VDS = 0V to 480V 340 pF RG Gate input resistance f=1 MHz Gate DC Bias = 0 test signal level = 20mV open drain 1.4 Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 400V, ID = 45A, VGS = 10V Figure 14 96 31 43 Coss eq.(2) pF pF pF 134 nC nC nC 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5%. 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/12 STW45NM60 Electrical characteristics Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD = 250V, ID = 22.5A RG = 4.7 VGS = 10V Figure 13 30 20 ns ns tr(Voff) tf tc Off-voltage rise time Fall time Cross-over time VDD = 400V, ID = 45A, RG = 4.7, VGS = 10V Figure 13 16 23 40 ns ns ns Table 7. Symbol ISD ISDM VSD (1) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Test conditions Min. Typ. Max. Unit Source-drain current 45 A Source-drain current (pulsed) 180 A 1.5 V Forward on voltage ISD = 45A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 45A, di/dt = 100A/s, VDD = 100 V, Tj = 25C Figure 15 508 10 40 ns C A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 45A, di/dt = 100A/s, VDD = 100 V, Tj = 150C Figure 15 650 14 43 ns C A 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5%. 5/12 Electrical characteristics STW45NM60 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static-drain source on resistance 6/12 STW45NM60 Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 12. Normalized BVDSS vs temperature 7/12 Test circuit 3 STW45NM60 Test circuit Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform 8/12 Figure 18. Switching time waveform STW45NM60 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/12 Package mechanical data STW45NM60 TO-247 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 0.134 b2 3.0 3.40 0.118 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 e 5.45 0.620 0.214 L 14.20 14.80 0.560 L1 3.70 4.30 0.14 L2 18.50 0.582 0.17 0.728 oP 3.55 3.65 0.140 0.143 oR 4.50 5.50 0.177 0.216 S 10/12 TYP 5.50 0.216 STW45NM60 5 Revision history Revision history Table 8. Revision history Date Revision Changes 05-Mar-2005 5 Complete document with curves 16-May-2006 6 The document has been reformatted 18-Dec-2006 7 Updates curves:Figure 1., Figure 4. and Figure 6. 02-Apr-2007 8 Figure 1. has been updated. 11/12 STW45NM60 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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