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DATA SH EET
Product data sheet
Supersedes data of 1999 May 11
2005 Feb 03
DISCRETE SEMICONDUCTORS
BZV49 series
Voltage regulator diodes
db
ook, halfpage
M3D109
2005 Feb 03 2
NXP Semiconductors Product data sheet
Volt age regulator diodes BZV49 series
FEATURES
•Total power dissipation: max. 1 W
•Tolerance series: approx . ±5%
•Working voltage range: nom. 2.4 to 75 V (E24 range)
•Non-repet itive peak reverse power dissipation:
max. 40 W.
APPLICATIONS
•General regulation functions.
DESCRIPTION
Medium-power voltage regulator diodes in a SOT89
plastic SMD package.
The diodes are available in the normalized E24 approx.
±5% tolerance range. The series consists of 37 types with
nominal working voltages from 2.4 to 75 V (BZV49-C2V4
to BZV49-C75).
PINNING
PIN DESCRIPTION
1anode
2cathode
3anode
321
sym096
2
31
Fig.1 Simplified outline (SOT89 ) and symbo l .
ORDERING INFORMATION
Note
1. The series consists of 37 types with n omina l workin g v oltages from 2.4 to 75 V (E24 range).
MARKING
TYPE NUMBER PACKAGE
NAME DESCRIPTION VERSION
BZV49-C2V4 to
BZV49-C75
note 1
SC-62 plastic surface mounted package; collector pad for good heat
transfer; 3 leads SOT89
TYPE
NUMBER MARKING
CODE TYPE
NUMBER MARKING
CODE TYPE
NUMBER MARKING
CODE TYPE
NUMBER MARKING
CODE
BZV49-C2V4 2Y4 BZV49-C6V2 6Y2 BZV49-C16 16Y BZV49-C43 43Y
BZV49-C2V7 2Y7 BZV49-C6V8 6Y8 BZV49-C18 18Y BZV49-C47 47Y
BZV49-C3V0 3Y0 BZV49-C7V5 7Y5 BZV49-C20 20Y BZV49-C51 51Y
BZV49-C3Y3 3Y3 BZV49-C8V2 8Y2 BZV49-C22 22Y BZV49-C56 56Y
BZV49-C3V6 3Y6 BZV49-C9V1 9Y1 BZV49-C24 24Y BZV49-C62 62Y
BZV49-C3V9 3Y9 BZV49-C10 10Y BZV49-C27 27Y BZV49-C68 68Y
BZV49-C4V3 4Y3 BZV49-C11 11Y BZV49-C30 30Y BZV49-C75 75Y
BZV49-C4V7 4Y7 BZV49-C12 12Y BZV49-C33 33Y − −
BZV49-C5V1 5Y1 BZV49-C13 13Y BZV49-C36 36Y − −
BZV49-C5V6 5Y6 BZV49-C15 15Y BZV49-C39 39Y − −
2005 Feb 03 3
NXP Semiconductors Pr oduct data shee t
Voltage regulator diodes BZV49 series
LIMITING VALUES
In accordance wi th the Absolute Max imum Rating System (IEC 60134).
Note
1. Device mounted on a ceramic substrate; area = 2.5 cm2; thickness = 0.7 mm.
ELECTRICAL CHARACTERISTIC S
Total series
Tamb = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
IFcontinuous forward current −250 mA
IZSM non-repetitive peak reverse current tp = 100 μs; square wave;
Tj = 25 °C prior to surge see Ta ble
“Per type”
Ptot total power dissipation Tamb = 25 °C; note 1 −1 W
PZSM non-repetitive peak re verse power
dissipation tp = 100 μs; square wave;
Tj = 25 °C prior to surge; see Fig.2 −40 W
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
SYMBOL PARAMETER CONDITIONS MAX. UNIT
VFforward voltage IF = 50 mA; see Fig.3 1 V
2005 Feb 03 4
NXP Semiconductors Product data sheet
Voltage regulator diodes BZV49 series
Per type
Tj = 25 °C unless otherwise specified.
BZV49-
CXXX
WORKING
VOLTAGE
VZ (V)
at IZtest
DIFFERENTIAL
RESISTANCE
rdif (Ω)
at IZtest
TEMP. COEFF.
SZ (mV/K)
at IZtest
see Figs 4 and 5
TEST
CURRENT
IZtest (mA)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
at VR = 0 V
REVERSE
CURRENT at
REVERSE
VOLTAGE
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A)
at tp = 100 μs;
Tamb = 25 °C
IR (μA) VR
(V)
MIN. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX. MAX.
2V4 2.2 2.6 70 100 −3.5 −1.6 0 5 450 50 1.0 6.0
2V7 2.5 2.9 75 100 −3.5 −2.0 0 5 450 20 1.0 6.0
3V0 2.8 3.2 80 95 −3.5 −2.1 0 5 450 10 1.0 6.0
3V3 3.1 3.5 85 95 −3.5 −2.4 0 5 450 51.0 6.0
3V6 3.4 3.8 85 90 −3.5 −2.4 0 5 450 51.0 6.0
3V9 3.7 4.1 85 90 −3.5 −2.5 0 5 450 31.0 6.0
4V3 4.0 4.6 80 90 −3.5 −2.5 0 5 450 31.0 6.0
4V7 4.4 5.0 50 80 −3.5 −1.4 +0.2 5300 32.0 6.0
5V1 4.8 5.4 40 60 −2.7 −0.8 +1.2 5300 22.0 6.0
5V6 5.2 6.0 15 40 −2.0 +1.2 +2.5 5300 12.0 6.0
6V2 5.8 6.6 610 0.4 2.3 3.7 5200 34.0 6.0
6V8 6.4 7.2 615 1.2 3.0 4.5 5200 24.0 6.0
7V5 7.0 7.9 615 2.5 4.0 5.3 5150 15.0 4.0
8V2 7.7 8.7 615 3.2 4.6 6.2 5150 0.7 5.0 4.0
9V1 8.5 9.6 615 3.8 5.5 7.0 5150 0.5 6.0 3.0
10 9.4 10.6 820 4.5 6.4 8.0 590 0.2 7.0 3.0
11 10.4 11.6 10 20 5.4 7.4 9.0 585 0.1 8.0 2.5
12 11.4 12.7 10 25 6.0 8.4 10.0 585 0.1 8.0 2.5
13 12.4 14.1 10 30 7.0 9.4 11.0 580 0.1 8.0 2.5
15 13.8 15.6 10 30 9.2 11.4 13.0 575 0.05 10.5 2.0
16 15.3 17.1 10 40 10.4 12.4 14.0 575 0.05 11.2 1.5
18 16.8 19.1 10 45 12.4 14.4 16.0 570 0.05 12.6 1.5
20 18.8 21.2 15 55 14.4 16.4 18.0 560 0.05 14.0 1.5
22 20.8 23.3 20 55 16.4 18.4 20.0 560 0.05 15.4 1.25
24 22.8 25.6 25 70 18.4 20.4 22.0 555 0.05 16.8 1.25
2005 Feb 03 5
NXP Semiconductors Product data sheet
Voltage regulator diodes BZV49 series
27 25.1 28.9 25 80 21.4 23.4 25.3 250 0.05 18.9 1.0
30 28.0 32.0 30 80 24.4 26.6 29.4 250 0.05 21.0 1.0
33 31.0 35.0 35 80 27.4 29.7 33.4 245 0.05 23.1 0.9
36 34.0 38.0 35 90 30.4 33.0 37.4 245 0.05 25.2 0.8
39 37.0 41.0 40 130 33.4 36.4 41.2 245 0.05 27.3 0.7
43 40.0 46.0 45 150 37.6 41.2 46.6 240 0.05 30.1 0.6
47 44.0 50.0 50 170 42.0 46.1 51.8 240 0.05 32.9 0.5
51 48.0 54.0 60 180 46.6 51.0 57.2 240 0.05 35.7 0.4
56 52.0 60.0 70 200 52.2 57.0 63.8 240 0.05 39.2 0.3
62 58.0 66.0 80 215 58.8 64.4 71.6 235 0.05 43.4 0.3
68 64.0 72.0 90 240 65.6 71.7 79.8 235 0.05 47.6 0.25
75 70.0 79.0 95 255 73.4 80.2 88.6 235 0.05 52.5 0.2
BZV49-
CXXX
WORKING
VOLTAGE
VZ (V)
at IZtest
DIFFERENTIAL
RESISTANCE
rdif (Ω)
at IZtest
TEMP. COEFF.
SZ (mV/K)
at IZtest
see Figs 4 and 5
TEST
CURRENT
IZtest (mA)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
at VR = 0 V
REVERSE
CURRENT at
REVERSE
VOLTAGE
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A)
at tp = 100 μs;
Tamb = 25 °C
IR (μA) VR
(V)
MIN. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX. MAX.
2005 Feb 03 6
NXP Semiconductors Pr oduct data shee t
Voltage regulator diodes BZV49 series
THERMAL CHARACTE RISTICS
Note
1. Device mounted on a ceramic substrate; area = 2.5 cm2; thickness = 0.7 mm.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-tp) thermal resistance from junction to tie-point 15 K/W
Rth(j-a) thermal resistance from junction to ambient note 1 125 K/W
GRAPHICAL DATA
Fig.2 Maximum permissible non-repetitive peak
reverse powe r dissipation versus duration.
handbook, halfpage
MBG801
103
1 duration (ms)
PZSM
(W)
10
102
10−1
10
1
(1)
(2)
(1) Tj = 25 °C (prior to surge).
(2) Tj = 150 °C (prior to surge).
Fig.3 Forward current as a function of forward
voltage; typical values.
handbook, halfpage
0.6 1
300
100
0
200
MBG781
0.8 VF (V)
IF
(mA)
Tj = 25 °C.
2005 Feb 03 7
NXP Semiconductors Pr oduct data shee t
Voltage regulator diodes BZV49 series
Fig.4 Temperature coefficient as a function of working current; typ ical values.
handbook, full pagewidth
−3
1
MBG927
10
-3
10
-2
10
-1
1
IZ (A)
−2
0
−1
SZ
(mV/K) 4V3 3V9
3V6
3V3
3V0
2V7
2V4
BZV49-C2V4 to C4V3.
Tj = 25 to 150 °C.
Fig.5 Temperature coefficient as a functi on of
working current; typical values.
handbook, halfpage
02016
10
0
−5
5
MBG924
4812 IZ (mA)
SZ
(mV/K)
4V7
10
9V1
8V2
7V5
6V8 6V2
5V6
5V1
BZV49-C4V7 to C10.
Tj = 25 to 150 °C.
2005 Feb 03 8
NXP Semiconductors Pr oduct data shee t
Voltage regulator diodes BZV49 series
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
DIMENSIONS (mm are the original dimensions)
SOT89 TO-243 SC-62 04-08-03
06-03-16
wM
e1
e
EHE
B
0 2 4 mm
scale
bp3
bp2
bp1
c
D
Lp
A
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT8
123
UNIT A
mm 1.6
1.4 0.48
0.35
c
0.44
0.23
D
4.6
4.4
E
2.6
2.4
HELp
4.25
3.75
e
3.0
w
0.13
e1
1.5 1.2
0.8
bp2
bp1
0.53
0.40
bp3
1.8
1.4
2005 Feb 03 9
NXP Semiconductors Pr oduct data shee t
Voltage regulator diodes BZV49 series
DATA SHEET STATUS
Notes
1. Please consult the most rec en tly issued document before initiating or completing a design.
2. The product s tatus of device(s) described in this document may ha ve changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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Printed in The Netherlands R76/04/pp10 Date of release: 2005 Feb 03 Document order number: 9397 750 13926