SGS-THOMSON BUZ80A MICROELECTRONICS BUZ80AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ky TYPE Voss Rps(on) Ip BUZ80A 800 V <3Q 3.8 A BUZ80AFI 800 V <3Q 2.4A TYPICAL Rogion) = 2.5 Q AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100C LOW INPUT CAPACITANCE LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION TO-220 ISOWATT220 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) CONSUMER AND INDUSTRIAL LIGHTING DC-AC INVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLY (UPS) INTERNAL SCHEMATIC DIAGRAM D (2) 6 1) 5 (3) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BUZ80A BUZ80AF I Vos Drain-source Voltage (Vas = 0) 800 Vv VoarR) Drain- gate Voltage (Res = 20 kQ) 800 Vv Vas Gate-source Voltage + 20 Vv Ip Drain Current (continuous) at T, = 25 C 3.8 2.4 A Ip Drain Current (continuous) at Te = 100 C 2.3 1.4 A Ipm(e) |Drain Current (pulsed) 15 15 A Prot Total Dissipation at To = 25 C 100 40 W Derating Factor 0.8 0.32 wc Viso Insulation Withstand Voltage (DC) 2000 Vv Tstg Storage Temperature -65 to 150 C Tj Max. Operating Junction Temperature 150 C () Pulse width limited by safe operating area April 1993 1/10BUZ80A/BUZ80AFI THERMAL DATA TO-220 ISOWATT220 Rthj-case |Thermal Resistance Junction-case Max 1.25 3.12 C/W Rthj-amb |Thermal Resistance Junction-ambient Max 62.5 C/W Rthesink |Thermal Resistance Case-sink Typ 0.5 C/W TI Maximum Lead Temperature For Soldering Purpose 300 C AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit lAR Avalanche Current, Repetitive or Not-Repetitive 3.8 A (pulse width limited by T; max, 6 < 1%) Eas Single Pulse Avalanche Energy 200 mJ (starting Tj = 25 C, Ip = lar, Vop = 50 V) Ear Repetitive Avalanche Energy 8 mJ (pulse width limited by Tj max, 6 < 1%) lAR Avalanche Current, Repetitive or Not-Repetitive 2.2 A (Te = 100 C, pulse width limited by T; max, 6 < 1%) ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. | Max. Unit ViBR)Dss Drain-source Ip = 250 HA Ves =0 800 Vv Breakdown Voltage loss Zero Gate Voltage Vos = Max Rating 250 LA Drain Current (Vas = 0) |Vps = Max Rating x 0.8 To =125C 1000 HA lass Gate-body Leakage Ves =+20V + 100 nA Current (Vos = 0) ON (*) Symbol Parameter Test Conditions Min. Typ. | Max. Unit Vestn) |Gate Threshold Voltage |Vps= Ves Ib=1mA 2 3 4 Vv Rps(on) |Static Drain-source On |Vas=10V Ip=1.7A 2.5 3 Q Resistance Ves=10V Ip=1.7A Te = 100C 6 Q ID(on) On State Drain Current |Vps > Ip(on) X Ros(on)max 3.8 A Ves=10V DYNAMIC Symbol Parameter Test Conditions Min. Typ. | Max. Unit Qts (*) |Forward Vos > Ip(on)X Ros(onymax Ip=1.7A 1 iS) Transconductance Ciss Input Capacitance Vos=25V f=1MHz Ves=0 1100 pF Coss Output Capacitance 150 pF Crss Reverse Transfer 55 pF Capacitance 2/10 ka 3GS-THOMSON yf PONIESBUZ80A/BUZ80AFI ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. | Max. Unit td(on) Turn-on Time Vop=30V Ip=2.3A 65 90 ns r Rise Time Re = 500 Vas =10V 150 200 ns (see test circuit, figure 3) (di/dt)on |Turn-on Current Slope |Vpp=600 V Ip=3.8A 80 110 A/us Re = 5092 Ves =10V (see test circuit, figure 5) Qg Total Gate Charge Vpp = 400 V Ip=5A Veg=10V 55 70 nc Qgs Gate-Source Charge 8 nc Qga Gate-Drain Charge 26 nc SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. | Max. Unit trvorty |Off-voltage Rise Time |Vpp=600 V Ip=3.8A 110 145 ns tt Fall Time Ra=50Q Vas =10V 140 190 ns to Cross-over Time (see test circuit, figure 5) 150 200 ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. | Max. Unit Isp Source-drain Current 3.8 A Ispm(e) |Source-drain Current 15 A (pulsed) Vsp (*) |Forward On Voltage Isp =7.6A Ves =0 2 Vv ter Reverse Recovery Isp = 3.8 A di/dt = 100 A/us 500 ns Time Va=100V Tj) = 150C Qrr Reverse Recovery (see test circuit, figure 5) 4.3 uC Charge IRRM Reverse Recovery 17 A Current (*) Pulsed: Pulse duration = 300 us, duty cycle 1.5% () Pulse width limited by safe operating area Safe Operating Areas For TO-220 Package IptA) 16 A + + af ye 10! 107 @C20730 107 103 Vp. () 10 10! 10? Safe Operating Areas For ISOWATT220 Package eCz20740 10 Vos () 3/10 & SGS-THOMSONBUZ80A/BUZ80AFI Thermal Impedeance For TO-220 Package 6cz0510 1071 mu JUL SINGLE PULSE tpee -2 1o8) i074 1973107? 1077 (8) Derating Curve For TO-220 Package GCi63iD Pict (W} 120 80 40 0 50 100 150 Tease C) Output Characteristics Ip CA) Sv 40 Vos () ky G 10 20 30 4/10 Thermal Impedance For ISOWATT220 Package 107" 0.05 0.02 0.01 SINGLE PULSE tol 1074 10 107-107 107" =10 + s) Derating Curve For ISOWATT220 Package GC1I7120 Pict (W} 40 30 20 10 Qo 40 80 120 Tease (C) Transfer Characteristics GC16340 Ip (A} 25 hy Vps=35V 55C ll] 6 4 Ty=1256 + aA Qo 2 4 6 Veg () I YBUZ80A/BUZ80AFI Transconductance GC1683550 of (5} Q 1 2 3 IpfA) Gate Charge vs Gate-source Voltage Ves (V} Vps=400 Ip =5A 10 0 10 20 30 40 Q,{nC) Normalized Gate Threshold Voltage vs Temperature Vescth} (norm) VosVes 1.1 Ip=imA 1.0 0.9 0.8 0.7 30 0 20 100 T, (C) ky Static Drain-source On Resistance GC163560 Ros(on) (a) 0 2 4 6 Ip fA) Capacitance Variations GCIBse8o C(pF) 800 600 400 200 Coss Cras 0 10 20 30 40 Vos () Normalized On Resistance vs Temperature Ros(en) norm 2.0 1.5 1.0 0.5 -30 0 90 100 Ty (C) 5/10BUZ80A/BUZ80AFI Turn-on Current Slope di /dt Gc19740 (A/us) 80 Vop =600V Veg =10V 1p =3.8A 60 40 20 6 50 100 150 200 Re(n)} Cross-over Time Gc19760 te(ns) 400 300 200 Von =600V Vog =10 100 | 5=3.BA 0 30 100 150 200 Rg(n) Accidental Overload Area Ip (A) 16 14 12 10 Ne Om a 200 400 600 800 Ypsf) 6/10 SCS-THOMSON MIGROELECTROR ky Turn-off Drain-source Voltage Slope dv /di GCis750 (v/ns) 5 Yop =600V Vos =10 |p=3.BA 0 30 100 150 200 Re(n} Switching Safe Operating Area Gcz0750 Ip (A) 16 12 0 200 400 600 800Vps({V) Source-drain Diode Forward Characteristics Isp (A) _ | T=150C 10 0 1 2 3 4 Vsp(V)BUZ80A/BUZ80AFI Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms 2200 3.3 oo MF FP Voo So Les l|_ I a 7 el i SCOBS7O VreR)Dss scosgag Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge Test Circuit Yop 12 ' = Arka " 1Ka 100nF RL 2290 3.3 BF BF , _ V a id 1q=CONST u b ) =20V=Veuax 1000 |e x DUT Ves Re Y * U.T, _ Ih D.U.T. |__| 4 vo Pu ~~ seit TL +H Pw 06x00 Fig. 5: Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time A D os DIODE G lee i =} 1000 *B uF 250 = _ = = + SCOBDIO 7/10 & SGS-THOMSONBUZ80A/BUZ80AFI 0-220 MECHANICAL DAT D1 8/10 & SGS-THOMSONBUZ80A/BUZ80AFI IWATT220 MECHANICAL D Is L2 La P011G 9/10 [7 868-THOMSON Jf RONIGSBUZ80A/BUZ80AFI Information furnished is believed to be accurate and reliable. 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SGS-THOMSON Microelectronics products are not authorized for use as critical components in life supportdevices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 10/10 &r SGS-THOMSON