Silicon Transistors Type Case 5= | Maximum Ratings at 25C amb. Characteristics SPECIAL No. 8 3 FEATURES be ge Nee r Vcewsat) c a) A Vop | Vce | Ves | Ie | Prot Iq | Min. | Max. | Io | Min. le lp Max. v Vv v A Ww mA mA | Mc/s| mA mA Vv NPN Microwave TIXS12 ZZ PE 30 15 2 | 0-2 4-0 50 20 200 50 | 1500t _ _ Po >250 mW at 1-5 Gc Power Source TIXS13 ZZ PE 30 15 0-2 1:0 50 20 200 50 | 1200t _ _ _ Po >125 mW at 1:5 Ge NPN 2N696 TO5 Pp 60 40 5 | 0-5 0-6 150 20 60 50 40 150 15 1:5 Complementary to 2N1131 Medium Power 2N697 TO5 P 60 40 5] 05 0-6 150 40 120 50 50 159 15 15 Complementary to 2N1132 High 2N698 TOS P 120 80 74 05 0-8 150 20 60 50 40 150 15 5-0 Voltage 2N1507 TOS P 60 30 5 |} 1:0 0-8 150 100 300 50 50 150 15 1-5 2N1613 TOS P 75 50 7| 05 0-8 150 40 120 50 60 150 15 15 Total switching time <30nS 2N1711 TO5 P 75 50 7) 1-0 0-8 150 100 300 50 70 150 15 1-5 2N1889 TOS P 100 60 7 | 05 0-3 150 40 120 50 50 150 15 5-0 2N1890 TOS P 100 60 7) 05 0-8 150 100 300 50 60 150 15 5-0 2N1893 TOS Pp 120 80 7) 05 0-8 150 40 120 50 50 150 15 5-0 2N2192 TOS PE 60 40 5] 1:0 0-8 150 100 300 50 50 150 15 0-35 2N2192A TOS PE 60 40 5 } 1:0 0:3 150 100 300 50 50 150 15 0-25 2N2193 TOS PE 80 50 8} 1-0 0-3 150 40 120 50 50 150 15 0-35 2N21938A TO5 PE 80 50 8 | 1:0 0-8 150 40 120 50 50 150 15 0-25 2N2194 TO5 PE 60 40 5 | 1:0 0-8 150 20 60 50 50 150 15 0:35 2N2194A TOS PE 60 40 5} 1:0 0-8 150 20 60 50 50 150 15 0-25 2N2243 TOS PE 120 80 7 | 1:0 0-8 150 40 120 50 50 150 15 0:35 2N2243A TOS PE 120 80 7310 0-8 150 40 120 50 50 150 15 0-25 2N3036 TOS PE 120 80 7 | 1-2 0-8 150 50 150 10 50 150 15 0-25 2N3418 TOS PE 85 60 8] 3 0-8 1000 20 60 100 40 1A] 100 0-25 2N3419 TOS PE 125 80 8 | 3 0-8 1000 20 60 100 40 1A] 100 0-25 Ptot at 100C case temp 2N3420 TOS PE 85 60 8] 3 0-8 1000 40 120 100 40 1A{ 100 0-25 10W 2N3421 TOS PE 125 80 8/3 0-8 1000 40 120 100 40 1A] 100 0-25 PNP Medium 2N1131 TOS P 50 | 35 5 | 0-60 | 0-60 |150 20 45 50 50 |150 15 {-155 Complementary Power to 2N696 Amplifiers 2N1132 TOS P 50 | 35 5 | 0-60 | 0-60 |150 30 90 | 50 60 |150 15 |1-5 Complementary Switches to 2N697 2N2695 TO46 PE 25 | 25 5 | 0-50 | 0-36 | 50 30 130 | 50 100 |300 30 |-1-0 2N2696 TO18 PE 25 | 25 5 | 0-50 | 036 | 50 30 130 | 50 100 |300 -30 |-1:0 2N2904 TOS PE 60 | 40 5 | 06 0-6 4-150 40 120 50 200 |150 15 0-4 2N2904A TO5 PE 60 | 60 5 | 06 0-6 {150 40 120 50 200 |150 15 0-4 2N2905 TOS PE 60 | 40 5 | 06 06 |150 100 300 50 200 |150 15 0-4 2N2905A TOS PE 60 | 60 5 | 06 06 |150 100 300 50 200 |150 15 0-4 2N2906 TO18 PE 60 | 40 5 | 06 0-4 |150 40 120 50 200 |150 15 0-4 2N2906A TO18 PE 60 | 60 5 | 06 0-4 |-150 40 120 50 200 |150 15 0-4 2N2907 TOR PE -60 | 40 5 | 0-6 0-4 |150 100 300 50 200 |150 15 0-4 2N2907A TO18 PE 60 | 60 5 | 06 0-4 {150 100 300 50 200 |--150 15 0-4 2N3702 Silect PE 40 | 25 5 | 0-2 0:3 50 60 300 50 100 | 50 5 |0-25 2N3703 Silect PE 50 | 30 5 | 0-2 0:3 50 30 150 | ~-50 100 | 50 -5 |-0-25 Complementary T1IS60 Silect PE 40 25 0-4 0-3 50 100 300 _ 100 5 0-6 N.P.N. Medium TIS60M Silect PE 40 25 5 | 0-4 0-3 50 100 300 _ _ 100 5 0-6 N.P.N. Power TIS61 Silect PE 40 | 25 5 | 0-4 0:3 50 100 300 _ _ 50 5 |0-25 P.N.P. Amplifiers TIS61M Silect PE 40 | 25 5 | 0-4 0-3 50 100 300 _ _ 50 5 [0-25 P.N.P. NPN High 2N3830 TOS PE 80 50 5] 1-2 1:0 500 30 _ 50 200 500 50 0-5 Storage time Speed Core 2N3831 TOS PE 70 40 5] 1:2 | 1:0 500 35 = 50 | 200 | 500 50 0-5 ye 40nS at 1 Amp Drivers NOTE 1: The following symbols have been used throughout the Product Summary: Under Construction: A Alloyed D Diffused E Epitaxial G ~- Grown M Mesa P Planar Under hre: Under fr: * hie @ fhib A thie ~} typical Under Dissipation: + dissipation at Tcase = 25C