KST-8004-001 1
STD1664
NPN Silicon Transistor
Description
• Medium power amplifier application
Features
• PC(Collector di ssipation)=2W(Ceramic sub state of 40×40×0.8mm used)
• Low collector saturation v oltage : VCE(sat)=0.15V(Typ.)
• Complementary pair with STB1132
Ordering Information
Type NO. Marking Package Code
STD1664 A2 SOT-89
: hFE rank, monthly code
Outline Dimensions unit :
mm
S
Se
em
mi
ic
co
on
nd
du
uc
ct
to
or
r
PIN Conne cti ons
1. Bas e
2. Collector
3. Emitter
4.0
0.50±0.1
1.82±0.05
0~0.1
1.5 -0.1
+0.2
3
1
2
4.5
-0.3
+0.5
2.5 -0.3
+0.2 1.00±0.3
-0.1
+0.2
0.52±0.05
0.42±0.05
0.42 -0.02
+0.04
0.15 Typ.
KST-8004-001 2
STD1664
Absolute maximum ratings (Ta=25°
°°
°C)
Characteristic Symbol Ratings Unit
Collector-Base voltage VCBO 40 V
Collector-Emitter voltage VCEO 32 V
Emitter-Base voltage VEBO 5V
Collector current IC1A
PC0.5
Collector dissipation PC*2W
Junction temperature Tj150 °C
Storage temperature Tstg -55~150 °C
* : When mounted on 40×40×0.8mm cer amic substate
Electrical Characteristics (Ta=25°
°°
°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collec tor-Base breakdown voltage BVCBO IC=50µA, IE=0 40 - - V
Collector - Emitter breakdown voltage BVCEO IC=1mA, IB=0 32 - - V
Emitter-Base break d own v olta ge BVEBO IE=50µA, IC=0 5- - V
Collector cut-off current ICBO VCB=20V, IE=0 - - 0.5 µA
Emitter c ut-off c urrent IEBO VEB=4V, IC=0 - - 0.5 µA
DC current gain hFE*VCE=3V, IC=0.1A 100 - 320 -
Collec tor -Emitter s a turation voltage VCE(sat) IC=500mA, IB=50mA - 0.15 0.4 V
Transition frequency fTVCE=5V, IC=50mA - 150 - MHz
Collec tor output capac itance Cob VCB=10V, IE=0, f=1MH z - 15 - pF
* : hFE ran k / O : 100 ~ 200, Y : 160 ~ 320
KST-8004-001 3
STD1664
Electrical Characteristic Curves
Fig. 2 IC - VBE
Fig. 3 IC - VCE Fig. 4 VCE(sat) - IC
Fig. 5 hFE - IC
Fig. 1 PC - Ta
