© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 8 1Publication Order Number:
BSS63LT1/D
BSS63LT1G,
NSVBSS63LT1G
High Voltage Transistor
PNP Silicon
Features
•NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO −100 Vdc
Collector−Emitter Voltage
RBE = 10 kWVCER −110 Vdc
Collector Current − Continuous IC−100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance Junction−to−Ambient RqJA 556 °C/W
Total Device Dissipation
Alumina Substrate, (Note 2)
TA = 25°C
Derate above 25°C
PD
300
2.4
mW
mW/°C
Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W
Junction and Storage Temperature TJ, Tstg −55 to
+150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
COLLECTOR
3
1
BASE
2
EMITTER
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
1
3
2
Device Package Shipping†
ORDERING INFORMATION
BSS63LT1G SOT−23
(Pb−free) 3000 / Tape & Ree
l
BM = Device Code
M = Date Code*
G= Pb−Free Package
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
BM M G
G
†
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
NSVBSS63LT1G SOT−23
(Pb−free) 3000 / Tape & Ree
l
www.onsemi.com
BSS63LT1G, NSVBSS63LT1G
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown V oltage
(IC = −100 mAdc) V(BR)CEO −100 − − Vdc
Collector−Emitter Breakdown V oltage
(IC = −10 mAdc, IE = 0, RBE = 10 kW)V(BR)CER −110 − − Vdc
Collector−Base Breakdown V oltage
(IE = −10 mAdc, IE = 0) V(BR)CBO −110 − − Vdc
Emitter−Base Breakdown Voltage
(IE = −10 mAdc) V(BR)EBO −6.0 − − Vdc
Collector Cutoff Current
(VCB = −90 Vdc, IE = 0) ICBO − − −100 nAdc
Collector Cutoff Current
(VCE = −110 Vdc, RBE = 10 kW)ICER − − −10 mAdc
Emitter Cutoff Current
(VEB = −6.0 Vdc, IC = 0) IEBO − − −200 nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = −10 mAdc, VCE = −1.0 Vdc)
(IC = −25 mAdc, VCE = −1.0 Vdc)
hFE 30
30 −
−−
−
−
Collector−Emitter Saturation V oltage
(IC = −25 mAdc, IB = −2.5 mAdc) VCE(sat) − − −250 mVdc
Base−Emitter Saturation Voltage
(IC = −25 mAdc, IB = −2.5 mAdc) VBE(sat) − − −900 mVdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = −25 mAdc, VCE = −5.0 Vdc, f = 20 MHz) fT50 95 − MHz
Case Capacitance
(IE = IC = 0, VCB = −10 Vdc, f = 1.0 MHz) CC− − 20 pF
Noise Figure
(IC = −0.2 mA, VCE = −5.0 Vdc, Rg = 2 kW, f = 1.0 kHz, BW = 200 Hz) NF − − 10 dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
BSS63LT1G, NSVBSS63LT1G
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. DC Current Gain Figure 2. Collector−Emitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (mA)
100.10.01
10
100
1000
Figure 3. Base−Emitter Saturation Voltage vs.
Collector Current Figure 4. Base−Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (mA)
1000100101
0.1
0.3
0.5
0.7
0.9
1.1
Figure 5. Base−Emitter Temperature
Coefficient Figure 6. Collector Saturation Region
h
FE
, DC CURRENT GAINV
BE(sat)
, BASE−EMITTER SATURATION
VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
1 100 1000
VCE = −5 V
25°C
−55°C
150°C
IC, COLLECTOR CURRENT (mA)
100.1
0.01
0.1
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
1 100 100
0
IC/IB = 10
25°C
−55°C
150°C
1
IC/IB = 10
25°C
−55°C
150°C
0.2
0.4
0.6
0.8
1.0
IC, COLLECTOR CURRENT (mA)
100
0
100101
0.3
0.5
0.7
0.9
VBE(sat), BASE−EMITTER SATURATION
VOLTAGE (V)
25°C
−55°C
150°C
0.2
0.4
0.6
0.8
1.0 VCE = −5 V
IC, COLLECTOR CURRENT (mA)
1000100101
1.0
1.4
1.8
2.2
2.6
qVBE
, TEMPERATURE COEFFICIENT (mV/
°
C)
IC/IB = 10
TA = −55°C to 150°C
1.2
1.6
2.0
2.4
0.1
IC, COLLECTOR CURRENT (mA)
10
0
1010.1
0
0.2
0.4
0.6
0.8
IC = 200 mA
TA = 25°C
0.1
0.3
0.5
0.7
0.01
IC = 10 mA
1.0
0.9
100 mA
50 mA
20 mA
BSS63LT1G, NSVBSS63LT1G
www.onsemi.com
4
TYPICAL CHARACTERISTICS
VCE, COLLECTOR EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (mA)
Single Pulse Test at TA = 25°C
1 s
100 ms
10 ms
Figure 7. Capacitance Figure 8. Current−Gain Bandwidth Product
IC, COLLECTOR CURRENT (mA)
100201020.50.20.1
1
10
100
1000
CURRENT−GAIN BANDWIDTH
PRODUCT (MHz)
Figure 9. Safe Operating Area
VR, REVERSE VOLTAGE (V)
100402010210.40.1
1
10
100
C, CAPACITANCE (pF)
640.2
TJ = 25°C
Cibo
Cobo
0.6 60
10001010.1
0.1
10
1000
100
100
1
VCE = −5 V
TJ = 25°C
15 50
BSS63LT1G, NSVBSS63LT1G
www.onsemi.com
5
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
AMIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE0.35 0.54 0.69 0.014 0.021 0.027
c0 −−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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