SOT223 PNP SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
ISSUE 2 FEBRUARY 1995
FEATURES
* 60 Volt VCEO
* 3 Amp continuous current
* Low saturation voltage
COMPLEMENTARY TYPE FZT651
PARTMARKING DETAIL FZT751
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -80 V
Collector-Emitter Voltage VCEO -60 V
Emitter-Base Voltage VEBO -5 V
Peak Pulse Current ICM -6 A
Continuous Collector Current IC-3 A
Power Dissipation at Tamb
=25°C Ptot 2W
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -80 V IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO -60 V IC=-10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO -5 V IE=100µA
Collector Cut-Off Current ICBO -0.1
-10 µA
µA
VCB
=-60V
VCB
=-60V,T
amb
=100°C
Emitter Cut-Off Current IEBO -0.1 µAVEB
=-4V
Collector-Emitter
Saturation Voltage
VCE(sat) -0.15
-0.45
0.3
0.6
V
V
IC=-1A, IB
=-100mA*
IC=-3A, IB
=-300mA*
Base-Emitter
Saturation Voltage
VBE(sat) -0.9 -1.25 V IC=-1A, IB
=-100mA*
Base-Emitter
Turn-On Voltage
VBE(on) -0.8 -1.0 V IC=-1A, VCE=-2V*
Static Forward Current
Transfer Ratio
hFE 70
100
80
40
200
200
170
150
300
IC=-50mA, VCE
=-2V*
IC=-500mA, VCE
=-2V*
IC=-1A, VCE
=-2V*
IC=-2A, VCE =-2V*
Transition Frequency fT100 140 MHz IC=-100mA, VCE
=-5V
f=100MHz
Switching Times ton 40 ns IC=-500mA, VCC
=-10V
IB1=IB2=-50mA
toff 450 ns
Output Capacitance Cobo 30 pF VCB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
FZT751
FZT751
C
C
E
B
3 2343 - 235
TYPICAL CHARACTERISTICS
VCE(sat) v IC
I
C
- Collector Current (Amps)
V- (Volts)
0.01 0.1 101
10
0
0.1
0.2
0.4
0.5
0.3
0.6
0.0010.0001
I
C
/I
B
=10
I
C
- Collector Current (Amps)
hFE v IC
h- Gain
0.01 0.1 1
V
CE
=2V
125
175
225
75
0
I
C
- Collector Current (Amps)
VBE(sat) v IC
V - (Volts)
0.6
0.8
1.0
1.2
1.4
0.01 100.1 1
0.0001 0.001
I
C
/I
B
=10
I
C
- Collector Current (Amps)
VBE(on) v IC
V - (Volts)
0.6
0.8
1.0
1.2
0.4 0.01 100.1 1
0.0001 0.001
V
CE
=2V
Switching Speeds
I
C
- Collector Current (Amps)
Switching time
0.1 1
I
B1
=I
B2
=I
C
/10
ts
tf
td
tr
ts
ns
0
td
tr
tf
ns
100
120
40
20
60
80
140
0
500
600
200
100
300
400
700
Single Pulse Test at T
amb
=25°C
0.1 100
1s
100ms
10
DC
0.01
VCE - Collector Emitter Voltage (V)
Safe Operating Area
10ms
1ms
100
µ
s
110
0.1
1
SOT223 PNP SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
ISSUE 2 FEBRUARY 1995
FEATURES
* 60 Volt VCEO
* 3 Amp continuous current
* Low saturation voltage
COMPLEMENTARY TYPE FZT651
PARTMARKING DETAIL FZT751
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -80 V
Collector-Emitter Voltage VCEO -60 V
Emitter-Base Voltage VEBO -5 V
Peak Pulse Current ICM -6 A
Continuous Collector Current IC-3 A
Power Dissipation at Tamb
=25°C Ptot 2W
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -80 V IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO -60 V IC=-10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO -5 V IE=100µA
Collector Cut-Off Current ICBO -0.1
-10 µA
µA
VCB
=-60V
VCB
=-60V,T
amb
=100°C
Emitter Cut-Off Current IEBO -0.1 µAVEB
=-4V
Collector-Emitter
Saturation Voltage
VCE(sat) -0.15
-0.45
0.3
0.6
V
V
IC=-1A, IB
=-100mA*
IC=-3A, IB
=-300mA*
Base-Emitter
Saturation Voltage
VBE(sat) -0.9 -1.25 V IC=-1A, IB
=-100mA*
Base-Emitter
Turn-On Voltage
VBE(on) -0.8 -1.0 V IC=-1A, VCE=-2V*
Static Forward Current
Transfer Ratio
hFE 70
100
80
40
200
200
170
150
300
IC=-50mA, VCE
=-2V*
IC=-500mA, VCE
=-2V*
IC=-1A, VCE
=-2V*
IC=-2A, VCE =-2V*
Transition Frequency fT100 140 MHz IC=-100mA, VCE
=-5V
f=100MHz
Switching Times ton 40 ns IC=-500mA, VCC
=-10V
IB1=IB2=-50mA
toff 450 ns
Output Capacitance Cobo 30 pF VCB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
FZT751
FZT751
C
C
E
B
3 2343 - 235
TYPICAL CHARACTERISTICS
VCE(sat) v IC
I
C
- Collector Current (Amps)
V- (Volts)
0.01 0.1 101
10
0
0.1
0.2
0.4
0.5
0.3
0.6
0.0010.0001
I
C
/I
B
=10
I
C
- Collector Current (Amps)
hFE v IC
h- Gain
0.01 0.1 1
V
CE
=2V
125
175
225
75
0
I
C
- Collector Current (Amps)
VBE(sat) v IC
V - (Volts)
0.6
0.8
1.0
1.2
1.4
0.01 100.1 1
0.0001 0.001
I
C
/I
B
=10
I
C
- Collector Current (Amps)
VBE(on) v IC
V - (Volts)
0.6
0.8
1.0
1.2
0.4 0.01 100.1 1
0.0001 0.001
V
CE
=2V
Switching Speeds
I
C
- Collector Current (Amps)
Switching time
0.1 1
I
B1
=I
B2
=I
C
/10
ts
tf
td
tr
ts
ns
0
td
tr
tf
ns
100
120
40
20
60
80
140
0
500
600
200
100
300
400
700
Single Pulse Test at T
amb
=25°C
0.1 100
1s
100ms
10
DC
0.01
VCE - Collector Emitter Voltage (V)
Safe Operating Area
10ms
1ms
100
µ
s
110
0.1
1
